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Formation of Interfacial Layers in laalo3/Silicon during Film Deposition

Chinese Physics Letters 2006年第2期23卷 467-469页

作者：相文峰吕惠宾颜雷何萌周岳亮陈正豪 Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100080

We have studied the interracial reactions between amorphous laalo3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between laalo3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the laalo3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the laalo3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.

关键词： amorphous laalo3 THIN-FILMS OXIDATION SILICON SI(100)

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N-Doped laalo3／Si（100） Films with High-k, Low-Leakage Current and Good Thermal Stability

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Chinese Physics Letters 2005年第1期22卷 182-184页

作者：相文峰吕惠宾陈正豪何萌陆旭兵刘丽峰郭海中周岳亮 InstituteofPhysics&CenterforCondensedMatterPhysics ChineseAcademyofSciencesPOBox603Beijing100080 InstituteofMicroelectronics PekingUniversityBeijing100871//DigitalDNALaboratoriesMotorolaInc.Beijing100871

High quality amorphous N-doped laalo3 (laaloN) films have been deposited onSi (100) in nitrogen gas by laser molecular beam epitaxy. The chemical nature and physicaldistribution of N in laaloN films has been performed by x-ray photoemission spectroscopy. Comparedwith laalo3, a significant improvement in the interfacial quality and leakage current density wasobtained by nitrogen additive. At gate voltage +1 V, the leakage current density of the laaloN filmwith an equivalent oxide thickness as thin as 2nm is obtained to be 2.9 x 10(-6) A/cm(2), whichdecreases almost two orders of magnitude from that of laalo3 film with the same thickness. Moreover,high-resolution transmission electron microscope analysis show that the laaloN sample is stillamorphous with a very sharp interface between the laaloN layer and the Si substrate after annealedat 900degreesC for 60s.

关键词： RAY PHOTOELECTRON-SPECTROSCOPY THIN-FILMS amorphous laalo3 DEPOSITION SI(100) TIN

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