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Significant performance enhancement in Algan/gan high electron mobility transistor by high-κ organic dielectric

Chinese Physics B 2010年第10期19卷 510-514页

作者：王泽高陈远富陈超田本朗褚夫同刘兴钊李言荣 State Key Laboratory of electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

The electrical properties of a1gan/gan high electron mobility transistor （HEMT） with and without high-κ organic dielectrics are investigated. The maximum drain current ID max and the maximum transconductance gm max of the organic dielectric/A1CaN/gan structure can be enhanced by 74.5%, and 73.7% compared with those of the bare a1gan/gan HEMT, respectively. Both the threshold voltage VT and gm max of the dielectric/Algan/gan HEMT are strongly dielectric-constant-dependent. Our results suggest that it is promising to significantly improve the performance of the a1gan/gan HEMT by introducing the high-κ organic dielectric.

关键词： a1gan/gan high electron mobility transistor electrical property organic dielectric

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Neutron irradiation effects on Algan/gan high electron mobility transistors

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Chinese Physics B 2012年第3期21卷 360-364页

作者：吕玲张进成薛军帅马晓华张伟毕志伟张月郝跃 School of Microelectronics Key Laboratory of Wide Band-Gap Semiconductor Materials and DevicesXidian University

a1gan/gan high electron mobility transistors （HEMTs） were exposed to 1 MeV neutron irradiation at a neutron ftuence of 1 × 10^15 cm-2. The dc characteristics of the devices, such as the drain saturation current and the maximum transconductance, decreased after neutron irradiation. The gate leakage currents increased obviously after neutron irradiation. However, the rf characteristics, such as the cut-off frequency and the maximum frequency, were hardly affected by neutron irradiation. The a1gan/gan heterojunctions have been employed for the better understanding of the degradation mechanism. It is shown in the Hall measurements and capacitance voltage tests that the mobility and concentration of two-dimensional electron gas （2DEG） decreased after neutron irradiation. Tbere was no evidence of the full-width at half-maximum of X-ray diffraction （XRD） rocking curve changing after irradiation, so the dislocation was not influenced by neutron irradiation. It is concluded that the point defects induced in a1gan and gan by neutron irradiation are the dominant mechanisms responsible for performance degradations of a1gan/gan HEMT devices.

关键词： neutron irradiation a1gan/gan high electron mobility transistor heterojunction de- fects

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high temperature characteristics of Algan/gan high electron mobility transistors

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Chinese Physics B 2011年第11期20卷 451-455页

作者：杨丽媛郝跃马晓华张进成潘才渊马骥刚张凯马平 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University School of Technical Physics Xidian University

Direct current （DC） and pulsed measurements are performed to determine the degradation mechanisms of a1gan/gan high electron mobility transistors （HEMTs） under high temperature. The degradation of the DC characteristics is mainly attributed to the reduction in the density and the mobility of the two-dimensional electron gas （2DEG）. The pulsed measurements indicate that the trap assisted tunneling is the dominant gate leakage mechanism in the temperature range of interest. The traps in the barrier layer become active as the temperature increases, which is conducive to the electron tunneling between the gate and the channel. The enhancement of the tunneling results in the weakening of the current collapse effects, as the electrons trapped by the barrier traps can escape more easily at the higher temperature.

关键词： a1gan/gan high electron mobility transistor high temperature characteristics traps current collapse

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