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Characterization of foreign grain on 6h-sic facet

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Journal of Central South University 2009年第3期16卷 344-348页

作者：王英民李娟宁丽娜高玉强胡小波徐现刚 State Key Laboratory of Crystal Materials Shandong University

6h-sic single crystals were grown by sublimation method. It is found that foreign grains occur frequently on the facets of the crystals. To characterize the foreign grain, a longitudinal and a sectional cut samples were prepared by standard mechanical processing method. Raman spectrum confirms that the foreign grain is actually a mis-oriented 6h-sic grain. The surface structure of the foreign grain was studied by chemical etching and optical microscopy. It is shown that etch pits in foreign grain region take the shape of isosceles triangle, which are different from those in mono-crystalline region, and high density stacking faults are observed on the surface of the foreign grain. The orientation of foreign grain surface is determined to be （10]-4） plane by back-scattering X-ray Laue image. The X-ray powder diffraction reveals that the powder is partly graphitized after a long crystal growth rim. Therefore it is believed that the loss of Si results in the formation of C inclusions, which is responsible for the nucleation of foreign grain in the facet region.

关键词： 6h-sic surface morphology foreign grain sublimation method

In situ luminescence measurement of 6h-sic at low temperature

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Chinese Physics B 2020年第4期29卷 77-81页

作者： Meng-Lin Qiu Peng Yin Guang-Fu Wang Ji-Gao Song Chang-Wei Luo Ting-Shun Wang Guo-Qiang Zhao Sha-Sha Lv Feng-Shou Zhang Bin Liao Key Laboratory of Beam Technology of Ministry of Education College of Nuclear Science and TechnologyBeijing Normal UniversityBeijing 100875China Beijing Radiation Center Beijing 100875China

To understand the evolution of defects in sic during irradiation and the influence of temperature,in situ luminescence measurements of 6h-sic crystal samples were carried out by ion beam induced luminescence(IBIL)measurement under2 MeV h^+ at 100 K,150 K,200 K,250 K,and 300 K.A wide band(400-1000 nm)was found in the spectra at all temperatures,and the intensity of the IBIL spectra was highest at 150 K among the five temperatures.A small peak from 400 nm to 500 nm was only observed at 100 K,related with the D1 defect as a donor-acceptor pair(D-A)*** further understanding the luminescent centers and their evolution,the orange band(1.79 eV)and the green band(2.14 eV)in the energy spectrum were analyzed by Gaussian decomposition,maybe due to the donor-deep defect/conduction band-deep defect transitions and Ti related bound excition,***,a single exponential fit showed that when the temperature exceeded 150 K,the two luminescence centers’resistance to radiation was reduced.

关键词： ion beam induced luminescence 6h-sic temperature

high temperature property studies of the 6h-sic MOS capacitor

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Science China(Physics,Mechanics & Astronomy) 2011年第1期54卷 95-97页

作者： MU WeiBing GONG Min CAO Qun School of Physical Science and Technology Sichuan University Chengdu 610064 China Institute of Electricity Engineering CAEP Mianyang 621900 China Key Laboratory of Radiation Physics and Technology (sichuan University) Ministry of Education Chengdu 610064 China

N-type and p-type 6h-sic metal oxide semiconductor (MOS) capacitor samples are fabricated with a typical method,and the high frequency capacitor voltage (C-V) curves of these samples are measured at temperatures ranging from 293 to 533 *** exists huge difference between the n-type and p-type ***-band voltage shift of the n-type sample becomes larger with temperature rising,but that of the p-type sample have very little *** may be caused by the residual Al in the p-type *** types of the sic samples follow the same rule of flat-band voltage changing with *** their mechanisms are different as temperature is above 453 *** both types the p-type sic is more suitable for high temperature applications.

关键词： high temperature 6h-sic MOS capacitor flat-band voltage

Effective Increase of Crystal Area during Sublimation Growth of 6h-sic by Using the Cone-shaped Baffle

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Journal of Materials Science & Technology 2007年第5期23卷 685-688页

作者： Shouzhen JIANG Xiangang XU Xiaobo hU Juan LI Xiufang ChEN Minhua JIANG State Key Laboratory of Crystal Materials Shandong University Jinan 250100 China College of Physics and Electronics Shandong Normal University Jinan 250014 China

A novel design of crucible is proposed in this paper for the growth of sic crystals. The relation between grown crystal shape and temperature distribution in a growth chamber was discussed. It is pointed out that the crystal shape had a close relationship with temperature distribution. The calculations suggested that the radial temperature field of the growing crystal became homogenous by setting up the cone-shaped baffle in the growth chamber. By modifying the crucible design and temperature distribution in the growth chamber, it is possible to enhance the enlargement of crystal, and also possible to keep grown surface flat.

关键词： 6h-sic Sublimation method Simulation Temperature distribution

Efficient piezo-catalytic dye degradation using piezoelectric 6h-sic under harsh conditions

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Rare Metals 2024年第7期43卷 3173-3184页

作者： Lin-Lin Zhou Tao Yang Kang Wang Lai-Pan Zhu En-hui Wang Kuo-Chih Chou hai-Long Wang Xin-Mei hou Institute for Carbon Neutrality University of Science and Technology BeijingBeijing 100083China Institute of Steel Sustainable Technology Liaoning Academy of MaterialsShenyang 110000China Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of SciencesBeijing 101400China School of Materials Science Engineering Zhengzhou UniversityZhengzhou 450001China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing University of Science and TechnologyBeijing 100083China

The development of novel piezoelectric catalysts against harsh conditions is indeed crucial for improving the piezo-catalytic degradation efficiency of colored organic dyes in *** this work,6h-sic nanoparticles(NPs)are utilized to piezo-catalytic degrade rhodamine B(RhB)and methylene blue(MB)under ultrasonic vibration for the first *** degradation efficiency of RhB and MB reaches 98.8%and 98.7%within 80 *** piezoelectricity of 6h-sic is comprehensively analyzed by the piezoresponse force microscope(PFM)and finite element method(FEM).The strong oxidizing active free radicals generated by the continuous piezoelectric polarized electric field of 6h-sic,i.e.,·O_(2)^(-)and·Oh,induce the decomposition reactions of colored organic dyes in *** the dyes are proven to degrade to harmless or less-harmful products gradually during the piezo-catalysis process by high-performance liquid chromatography tandem mass spectrometry(hPLC-MS).Moreover,RhB is also decomposed efficiently by 6hsic NPs under acidic and alkaline *** results prove the feasibility of 6h-sic for decomposing common water pollutants under harsh conditions and provide a new perspective for water purification.

关键词： Piezo-catalytic degradation 6h-sic Rhodamine B(RhB) Methylene blue(MB) harsh conditions

Effect of vanadium on the room temperature ferromagnetism of V-doped 6h-sic powder

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Chinese Physics B 2013年第2期22卷 474-476页

作者：王辉严成锋孔海宽陈建军忻隽施尔畏 Shanghai Institute of Ceramics Chinese Academy of Sciences University of the Chinese Academy of Sciences

This study focuses on the effect of V-doping on the ferromagnetism（FM） of 6h-sic *** X-ray diffraction results indicate that V is inserted into the 6h-sic *** Raman spectra reveal that with a V concentration of 25 ppm,the crystalline quality and carrier concentration of 6h-sic are hardly *** is found that after the V-doping process,the saturation magnetization（Ms） and the vacancy concentration of 6h-sic are both *** these results,it is deduced that the effect of V might contribute mainly to the increase of vacancy concentration,thus resulting in the increase of Ms of V-doped 6h-sic.

关键词： 6h-sic V-doping ferromagnetism vacancy concentration

Low-Angle Grain Boundaries in Sublimation Grown 6h-sic Crystals

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Journal of Rare Earths 2006年第z1期24卷 8-10页

作者： Jiang Shouzhen Li Xianxiang Dong Jie Chen Xiufang Xu Xiangang hu Xiaobo State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100China

high-resolution X-ray diffractometry(hRXRD)was used to assess the quality of 6h-sic crystals grown by sublimation *** results show the occurrence of low-angle grain boundaries(LB)is close relative to the inclination of the crystal *** the central faceted region with 0°inclination the crystal is of high structural ***,at the region close to the facet with less than 5°inclination LB occurs slightly and at the region close to the peripheral polytype ring with more than 5°inclination LB defect occurs *** density of LB can be drastically reduced by decreasing radial temperature gradient that determines the shape of the crystal growth interface.

关键词： low-angle grain boundaries sublimation 6h-sic radial temperature gradient

Formation of nano-twinned 3C-sic grains in Fe-implanted 6h-sic after 1500-℃annealing

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Chinese Physics B 2021年第8期30卷 89-93页

作者： Zheng han Xu Wang Jiao Wang Qing Liao Bingsheng Li Nuclear Power Institute of China Chengdu 610200China sichuan Vocational and Technical College of Communications Chengdu 611130China State Key Laboratory for Environment-friendly Energy Materials Southwest University of Science and TechnologyMianyang 621010China

A nano-twinned microstructure was found in amorphous sic after high-temperature *** incidence x-ray diffraction,high-resolution transmission electron microscopy,and electron diffraction were performed to characterize the microstructure and phase transition in the recrystallization *** 1500℃or 2-h annealing,3C-sic grains and numerous stacking faults on the{111}planes were *** 3C-sic grains have nano-twinned structure with{011}*** the nano-twinned 3C-sic grains,there is a stacking fault,indicating that the formation mechanisms of the nano-twinned structure are related to the disorder of Si *** increase in the twin thickness with increasing annealing temperature demonstrates that the nano-twinned structure can sink for lattice defects,in order to improve the radiation tolerance of sic.

关键词： 6h-sic ion implantation microstructure transmission electron microscopy recrystallization

Defects mediated ferromagnetism in a V-doped 6h-sic single crystal

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Chinese Physics B 2012年第6期21卷 494-497页

作者：卓世异刘学超熊泽闫文盛忻隽杨建华施尔畏 Shanghai Institute of Ceramics Chinese Academy of SciencesShanghai 200050China Graduate University of the Chinese Academy of Sciences Beijing 100049China National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230029China

Undoped and V-doped 6h-sic single crystals have been grown by the physical vapor transport *** V concentration is determined to be 3.76×10^17 at/cm^3 and 6.14×10^17 at/cm^3 by secondary ion mass spectrometry for low V-doped and high V-doped sic samples,*** undoped 6h-sic shows diamagnetism,while the V-doped 6h-sic exhibits weak *** lower V-doped sample shows stronger ferromagnetism compared to that of the higher V-doped ***,the structural characterization indicates that the lower V-doped sic has a relative poor crystalline *** is found that both V dopants and defects are essential for introducing ferromagnetic exchange in V-doped sic single crystals.

关键词： V-doping 6h-sic defects magnetic materials