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Polarizer-free polarimetric image sensor through anisotropic two-dimensional Ge Se

Science China Materials 2021年第5期64卷 1230-1237页

作者： Xiaoting Wang Fang Zhong Jun Kang Can Liu Ming Lei Longfei Pan Hailu Wang Fang Wang Ziqi Zhou Yu Cui Kaihui Liu Jianlu Wang Guozhen Shen Chongxin Shan Jingbo Li Weida Hu Zhongming Wei State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences&Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100083China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China Beijing Computational Science Research Center Beijing 100193China State Key Laboratory for Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China State Key Laboratory of Information Photonics and Optical Communications School of ScienceBeijing University of Posts and TelecommunicationsBeijing 100876China Henan Key Laboratory of diamond Optoelectronic Materials and devices School of Physics and EngineeringZhengzhou UniversityZhengzhou 450001China Institute of semiconductors South China Normal UniversityGuangzhou 510631China

Light polarization could provide critical visual information(e.g., surface roughness, geometry, or orientation) of the imaged objects beyond prevailing signals of intensity and wavelength. The polarization imaging technology thus has a large potential in broad fields such as object detection. However, intricate polarization coding is often required in these fields, and the existing complicated lensed system and polarizers have limited the miniaturization capabilities of the integrated imaging sensor. In this study, we demonstrate the utilization of two-dimensional(2 d) in-plane anisotropic α-Ge Se semiconductor to realize the polarizer-free polarization-sensitive visible/near-infrared(VIS-NIR) photodetector/imager. As the key part of the sensor system, this prototype Au/Ge Se/Au photodetector exhibits impressive performances in terms of high sensitivity, broad spectral response, and fast-speed operation(~10^(3) A W^(-1), 400–1050 nm,and 22.7/49.5 μs). Further, this device demonstrates unique polarization sensitivity in the spectral range of 690–1050 nm and broadband absorption of light polarized preferentially in the y-direction, as predicted by the analysis of optical transition behavior in α-Ge Se. Then we have successfully incorporated the 2 d Ge Se device into an imaging system for the polarization imaging and captured the polarization information of the radiant target with a high contrast ratio of 3.45 at808 nm(NIR band). This proposed imager reveals the ability to sense dual-band polarization signals in the scene withoutpolarizers and paves the way for polarimetric imaging sensor arrays for advanced applications.

关键词： GeSe 2d anisotropic semiconductors polarization sensing detectors broadband polarimetric imaging

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