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Two-dimensional In_(2)se_(3):A rising advanced material for ferroelectric data storage

InfoMat 2022年第8期4卷 54-81页

作者： Yu-Ting Huang Nian-Ke Chen Zhen-Ze Li Xue-Peng Wang Hong-Bo Sun Shengbai Zhang Xian-Bin Li State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchunChina State Key Lab of Precision Measurement Technology and Instruments Department of Precision InstrumentTsinghua UniversityBeijingChina department of Physics Applied Physicsand AstronomyRensselaer Polytechnic InstituteTroyNew YorkUSA

Ferroelectric memory is a promising candidate for next-generation nonvolatile memory owing to its outstanding performance such as low power consump-tion,fast speed,and high ***,the ferroelectricity of conven-tional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer *** a result,the miniaturization of ferroelectric devices was hindered,which makes ferroelectric memory unable to keep up with the development of integrated-circuit(IC)***,a two-dimensional(2d)in2se3 was reported to maintain stable ferro-electricity at the ultrathin scale,which is expected to break through the bottle-neck of ***,devices based on 2d in2se3,including the ferroelectric field-effect transistor,ferroelectric channel transistor,synaptic fer-roelectric semiconductor junction,and ferroelectric memristor were ***,a comprehensive understanding of the structures and the ferroelectric-switching mechanism of 2d in2se3 is still ***,the atomic structures of different phases,the dynamic mechanism of ferroelectric switching,and the performance/functions of the latest devices of 2d in2se3 are ***,the correlations among the structures,the properties,and the device performance are ***,several crucial problems or challenges and possible research directions are put *** hope that this review paper can provide timely knowledge and help for the research commu-nity to develop 2d in2se3 based ferroelectric memory and computing technol-ogy for practical industrial applications.

关键词： 2d ferroelectric device 2d ferroelectric material 2d in2se3 neuromorphic computing nonvolatile memory

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