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Solar‑Driven Sustainability:Ⅲ–ⅤSemiconductor for Green Energy Production Technologies

Nano-Micro Letters 2024年第11期16卷 445-478页

作者： Chandran Bagavath Jeong‑Kyun Oh Sang‑Wook Lee Dae‑Young Um Sung‑Un Kim Veeramuthu Vignesh Jin‑Seo Park Shuo Han Cheul‑Ro Lee Yong‑Ho Ra Division of Advanced Materials Engineering Engineering CollegeResearch Center for Advanced Materials Development(RCAMD)Jeonbuk National UniversityJeonju 54896Republic of Korea

Long-term societal prosperity depends on addressing the world’s energy and environmental problems,and photocatalysis has emerged as a viable *** the efficiency of photocatalytic processes is fundamentally achieved by optimizing the effective utilization of solar energy and enhancing the efficient separation of photogenerated *** has been demonstrated that the fabrication ofⅢ–Ⅴsemiconductor-based photocatalysts is effective in increasing solar light absorption,long-term stability,large-scale production and promoting charge *** focused review explores on the current developments inⅢ–Ⅴsemiconductor materials for solar-powered photocatalytic *** review explores on various subjects,including the advancement ofⅢ–Ⅴsemiconductors,photocatalytic mechanisms,and their uses in H2 conversion,CO_(2)reduction,environmental remediation,and photocatalytic oxidation and reduction *** order to design heterostructures,the review delves into basic concepts including solar light absorption and effective charge *** also highlights significant advancements in green energy systems for water splitting,emphasizing the significance of establishing eco-friendly systems for CO_(2)reduction and hydrogen *** main purpose is to produce hydrogen through sustainable and ecologically friendly energy *** review intends to foster the development of greener and more sustainable energy source by encouraging researchers and developers to focus on practical applications and advancements in solar-powered photocatalysis.

关键词： Green energy system Hydrogen evolution CO_(2)reduction ⅲ-ⅴsemiconductors Photo electrochemical water splitting

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Effect of Zn doping on electronic structure and optical properties zincblende GaN(A DFT+U insight)

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Communications in Theoretical Physics 2021年第3期73卷 139-147页

作者： Muhammad Junaid Iqbal Khan Zarfishan Kanwal Masood Yousaf Hamid Ullah Javed Ahmad Abid Latif Yong-Han Shin Ata Ur Rahman Khalid Laboratory of Theoretical and Experimental Physics Department of PhysicsBahauddin Zakariya UniversityMultan(60800)Pakistan Department of Civil Engineering Faculty of Engineering and TechnologyBahauddin Zakariya UniversityMultan60800Pakistan Department of Physics Division of Science and TechnologyUniversity of EducationTownshipLahore54770Pakistan Multiscale Materials Modelling Laboratory Department of PhysicsUniversity of UlsanUlsan44610Republic of Korea

The development of new materials,having exceptional properties in comparison to existing materials is highly required for bringing advancement in electronic and optoelectronic *** this fact,we investigated structural,electronic,and optical properties of zincblende GaN doped with selected Zn concentrations(6.25%,12.50%,and 18.70%),using the first-principle calculations based on density functional theory with GGA+*** conducted the entire study using the WIEN2K *** this study,we calculated various significant parametric quantities such as cohesive energies,formation energies,bulk moduli,and lattice constants along with the study of optical and electronic properties by substituting Ga atoms with Zn atoms in 1×2×2 *** structural stability is confirmed by studying the phonon dispersion curves which suggest that Zn:GaN material is stable against the 6.25%and 18.70%Zn concentrations while for 12.50%,it shows *** Hubbard values U=0,2,4,6 eV were added to GGA and the electronic properties were improved with the U=6 *** absorption was blue shifted while the refractive index and dielectric constant were increased with increasing the Zn *** properties are enhanced due to the prime contribution of cations(Zn)3ri *** optical and electronic properties are further discussed in detail in the entire study.

关键词： density functional theory(DFT) optoelectronics ⅲ-ⅴsemiconductors optical properties electronic properties structural properties

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