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Square microcavity semiconductor lasers

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Chinese Physics B 2018年第11期27卷 176-185页

作者： Yuede Yang Haizhong Weng Youzeng Hao Jinlong Xiao Yongzhen Huang State Key Laboratory of Integrated Optoelectronics Institute of Semiconductors ＆ College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100083 China

Square microcavities, which support whispering-gallery modes with total internal reflections, can be employed as high-quality laser resonators for fabricating compact, low-threshold semiconductor lasers. In this paper, we review the recent progress of square microcavity semiconductor lasers. The characteristics of confined optical modes in the square microcavities are introduced briefly. Based on the mode properties of the square microcavities, dual-mode lasers with tunable wavelength intervals are realized for generating microwave signals. Furthermore, deformed square microcavity lasers with the sidewalls replaced by circular sides are proposed and experimentally demonstrated to enhance the mode confinement and increase the dual-mode interval to the THz range. In order to further reduce the device size, metal-confined wavelength-scale square cavity lasers are also demonstrated.

关键词： square microcavity whispering-gallery modes semiconductor lasers

All-optical realization of × NOR logic gate using chaotic semiconductor lasers under phase modulator control

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Chinese Optics Letters 2010年第12期8卷 1147-1149页

作者：颜森林 Department of Physics and Electronic Engineering Nanjing Xiaozhuang University

The theoretical construction of the fundamental × NOR gate using two injection semiconductor laser diodes due to mutual coupling is presented. Two laser diodes that are commonly driven by a monochromatic light beam result in chaos; however, chaotic synchronization between the two lasers may be achieved by coupling them. The all-optical logic gate is finally implemented by synchronizing or un-synchronizing appropriately the two chaotic states under a phase modulator （PM） control. Numerical results validate the feasibility of the method.

关键词： Chaotic systems lasers Light modulators Logic gates Monochromators Numerical methods Phase modulation semiconductor lasers Synchronization

semiconductor lasers for high-speed information technologies

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Chinese Optics Letters 2017年第1期15卷 2-7页

作者：祝宁华 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China University of Chinese Academy of Sciences Beijing 100049China

This Review reviews semiconductor lasers with an emphasis on high-speed information technologies. semiconductor lasers are classified based on their applications in optical communications. Different types of semicondu... 详细信息

关键词： lasers and laser optics Modulators semiconductor lasers

Comprehensive and fully self-consistent modeling of modern semiconductor lasers

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Journal of semiconductors 2016年第2期37卷 45-56页

作者： W.Nakwaski R.P.Sarza?a Photonics Group Institute of Physics Lodz University of Technology

The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers de- pends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered condi- tions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-buming effect has been discussed. The impacts on laser performance introduced by oxide apertures （their sizes and localization） have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures.

关键词： semiconductor lasers simulation model EEL VCSEL VECSEL DBF QCL

Cavity-Mode Properties of semiconductor lasers Operating in Strong-Feedback Regime

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Journal of Physical Science and Application 2015年第3期5卷 209-219页

作者： Qin Zou Abderrahmane Brezini Departement Electronique et Physique Institut Mines-Telecom UMR 5157 CNRS 9 rue Charles Fourier 91011 Evry CedexFrance CEA Saclay Nano-lnnov PC 176 Bat. 861 91191 Gif sur Yvette Cedex France Departement de Chimie Faculte des Sciences Universite d 'Oran BP 1524 Oran El M 'Naouer 31000 Oran Algerie

This paper investigates the modal properties of semiconductor lasers operating in the strong-feedback regime. Analytical expressions are developed based on an iterative travelling-wave model, which enable a complete and quantitative description of a compound cavity mode in its steady state. Additional information is provided about the physical inside into a compound laser system, such as a bifurcation diagram of the compound cavity modes for full variation range （from 0 to 1） of the external reflection coefficient and a more general shape for the diagram of photon density versus mode phase - this latter will reduce to the classical ＂ellipse＂ in the weak-feedback regime. It is shown that in the strong-feedback regime, a feedback laser is characterized by a small mode number and a high density of photons. This behavior confirms previous experimental observations, showing that beyond the coherence-collapse regime, the compound laser system could be re-stabilized, and that as a result power-enhanced low-noise stable laser operation with quasi-uniform pulsation is possible with external-mirror reflectivity close to 1. Moreover, it is also shown that for a compound system operating in the strong-feedback regime, an anti-reflection treatment of a laser can significantly reduce its current threshold, and that in the absence of this treatment excitation of a minimum-linewidth mode with higher output power would be possible inside such a system. Finally, it is shown that in the weak-feedback regime except for a phase shift the iterative travelling-wave model will reduce to the Lang-Kobayashi model in cases where the product of the feedback rate and the internal round-trip time is much less than unity （that would mean in situations of as-cleaved lasers）.

关键词： semiconductor lasers external optical feedback compound cavity modes weak-feedback regime strong-feedbackregime coherence collapse iterative travelling-wave model Lang-Kobayashi model.

All-optical functions based on semiconductor ring lasers

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Chinese Optics Letters 2010年第9期8卷 918-923页

作者： Siyuan Yu Department of Electronic and Electrical Engineering University of Bristol Bristol BS8 1 UB UK Visiting State Key Laboratory of ASIC and Department of Communications Engineering School of Information Science and Engineering Fudan University Shanghai 200433 China

semiconductor ring laser （SRL） has been shown to possess robust bistability between its two possible directions, i.e., clockwise （cw） and counter-clockwise （ccw） lasing, routinely demonstrating directional extinction ratio （DER） of 〉 25 dB. In this paper, experimental schemes and results using the SRL as a universal photonic digital element to form all-optical logic, memory, and signal processing circuits are summarized. It is demonstrated that the SRL can be used for both combinatorial and sequential logic functions, and as all-optical regeneration devices. Furthermore, it is shown that a SRL logic circuit can be all-optically reconfigured to perform different all-optical logic functions.

关键词： Digital circuits Ring lasers semiconductor lasers Signal processing Switching circuits

Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Pérot semiconductor lasers

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Journal of semiconductors 2003年第8期24卷 789-793页

作者：韩春林刘瑞喜国伟华于丽娟黄永箴兰州大学物理科学与技术学院兰州730000 中国科学院半导体研究所北京100083

A fitting process is used to measure the cavity loss and the quasi Fermi level separation for Fabry Pérot semiconductor *** the amplified spontaneous emission (ASE) spectrum,the gain spectrum and single pass ASE obtained by the Cassidy method are applied in the fitting *** a 1550nm quantum well InGaAsP ridge waveguide laser,the cavity loss of about ～24cm -1 is obtained.

关键词： semiconductor lasers measurement technique cavity loss

Recent advances in ultrafast semiconductor disk lasers

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Light(Science & Applications) 2015年第1期4卷 281-294页

作者： Bauke W Tilma Mario Mangold Christian A Zaugg Sandro M Link Dominik Waldburger Alexander Klenner Aline S Mayer Emilio Gini Matthias Golling Ursula Keller Department of Physics Institute for Quantum ElectronicsETH ZurichZurich 8093Switzerland FIRST Center for Micro-and Nanoscience ETH ZurichZurich 8093Switzerland

The performance of ultrafast semiconductor disk lasers has rapidly advanced in recent *** strong interest from industry for inexpensive,compact,and reliable ultrafast laser sources in the picosecond and femtosecond domains has driven this technology toward commercial *** metrology and biomedical applications would benefit from sub-200-femtosecond pulse durations with peak powers in the kilowatt *** aim of this review is to briefly describe the market potential and give an overview of the current status of mode-locked semiconductor disk *** focus is placed on the ongoing efforts to achieve shorter pulses with higher peak powers.

关键词： lasers modelocked lasers semiconductor lasers ultrafast lasers vertical emitting lasers

Dynamics and Synchronization of semiconductor lasers

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Dynamics and Synchronization of Semiconductor Lasers