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Interface annealing characterization of Ti/Al/Au ohmic contacts to p-type 4H-SiC

Journal of Semiconductors 2015年第12期36卷 53-61页

作者：韩超张玉明宋庆文汤晓燕郭辉张义门杨霏钮应喜 School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Advanced Materials and Nanotechnology Xidian University State Grid Smart Grid Research Institute

Ti/Al/Au ohmic contacts to p-type 4H-SiC in terms of a different annealing time and Ti composition are reported. At 1050 ~C, proper increase in annealing time plays a critical role in the Schottky to ohmic contact conversion. With the optimized annealing time, the contact with a high Ti content yields a lower specific contact resistivity （Pc） of 6.4 × 10^-5 Ω.cm2 compared with the low-Ti contact. The annealed surface morphology and phase resultants were examined by scanning electron microscopy （SEM） and X-ray diffraction （XRD）, respectively. For the better ohmic contact, element distribution and chemical states were qualitatively identified by X-ray photoelectron spectroscopy （XPS） depth analysis. In particular, the presence of C and a Si-related phase was discussed and associated with the change in the surface status of the as-grown epilayer of 4H-SiC during annealing. The results reveal that the out-diffused C and Si atoms, with an approximate atomic ratio of 1 ： 1 in the contact layer, can combine to form an amorphous Si-C state. The polycrystalline graphite instead of an unreacted C cluster in the whole alloyed structure and an extra nanosize graphite flake on the outermost surface of the annealed contact were confirmed by Raman spectroscopy.

关键词： 4H-SiC p-type ohmic contact titanium aluminum gold

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Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

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Chinese Physics B 2015年第11期24卷 452-459页

作者：韩超张玉明宋庆文汤晓燕张义门郭辉王悦湖 School of Microelectronics Xidian University Key Laboratory of Wide Band Gap Semiconductor Materials and Devices School of Advanced Materials and Nanotechnology Xidian University

This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the AI：Ti composition with no more than 50 at.% Al. The specific contact resistance （SCR） is obtained to be as low as 2.6 × 10-6Ωcm2 for the bilayered Ti（100 nm）/Al（100 nm） contact treated with 3 rain rapid thermal annealing （RTA） at 1000 ℃. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti3SiC2 dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti3 SiC2 layer with （0001）-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing.

关键词： 4H-SiC p-type ohmic contact alloying step bunching

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