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Evaluation model for service life of dam based on time-varying risk probability

science China(Technological sciences) 2009年第7期52卷 1966-1973页

作者： SU HuaiZhi WEN ZhiPing HU Jiang WU ZhongRu College of Water Conservancy and Hydropower Engineering of Hohai University Nanjing 210098China National Engineering Research Center of Water Resources Efficient Utilization and Engineering Safety Nanjing 210098China College of Computer Engineering Nanjing Institute of TechnologyNanjing 211167China

For many dam projects in China, the 50-year designed life time is coming to an end. It is urgent to study the theory and method to evaluate the dam service life. In this paper, firstly, the probability theory of fuzzy event and time-varying effect theory are used to analyze the time-variety of various risk factors in the process of dam operations. A method is proposed to quantify the above time-variety and a model to describe the fuzzy time-varying risk probability for the dam structure is also built. Secondly, the information entropy theory is used to analyze the uncertain degree relationship between the characteristic value of membership function and fuzzy risk probability, and a mathematical method is presented to calculate the time-varying risk probability accordingly. Thirdly, the relation mode between time-varying risk probability and service life is discussed. Based on this relation mode and the acceptable risk probability of dams in China, a method is put forward to evaluate and forecast the dam service life. Finally, the proposed theory and method are used to analyze one concrete dam. The dynamic variability and mutation feature of the dam risk probability are analyzed. The remaining service life of this dam is forecasted. The obtained results can provide technology support for the project management department to make treatment measures of engineering and reasonably arrange reinforce cost. The principles in this paper have wide applicability and can be used in risk analysis for slope instability and other fields.

关键词： dam service life evaluation time-varying risk probability fuzzy probability theory information entropy theory

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High-Performance Sb-Doped GeTe Thermoelectric Thin Film and Device

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Acta Metallurgica Sinica(English Letters) 2023年第10期36卷 1699-1708页

作者： Zhenqing Hu Hailong Yu Juan He Yijun Ran Hao Zeng Yang Zhao Zhi Yu Kaiping Tai School of Materials science and Engineering University of Science and Technology of ChinaShenyang110016China Shenyang National Laboratory for Materials science Institute of Metal ResearchChinese Academy of SciencesShenyang110016China

GeTe-based materials have attracted significant attention as high-efficiency thermoelectric materials for mid-temperature ***,GeTe thin-film materials with thermoelectric performances comparable to that of their bulk counterparts have not yet been reported,because of their unsatisfactory electrical and thermal properties caused by their poor crystal quality and high carrier ***,a series of Sb-doped GeTe films and devices with remarkable thermoelectric performances are *** films are prepared through magnetron sputtering deposition at 553 K and exhibit a unique microstructure that consists of coarse-and fine-sized grains with high crystallization *** fine grains enhance the scattering associated with phonon transport and the coarse grains provide electron transport channels,which can suppress the thermal conductivity without obviously sacrificing the electrical ***,Sb doping can effectively optimize the carrier concentration and increase the carrier effective mass,while introducing point defects and stacking faults to further scatter the phonon transport and decrease the thermal ***,a peak power factor of 22.37μW cm−1 K−2 is obtained at 703 K and a maximum thermoelectric figure of merit of 1.53 is achieved at 673 K,which are substantially larger than the values reported in the existing literature.A flexible thermoelectric generator is designed and fabricated using Sb-doped GeTe films deposited on polyimide and achieves a maximum output power density of 2.22×103 W m−2 for a temperature difference of 300 K.

关键词： Thermoelectric thin film GeTe-based materials Sb doping Carrier concentration Thermoelectric generator

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