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Large-area(64 × 64 array) inkjet-printed high-performance metal oxide bilayer heterojunction thin film transistors and n-metal-oxide-semiconductor(NMOS) inverters

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Journal of Materials Science & Technology 2021年第22期81卷 26-35页

作者： Shuangshuang Shao Kun Liang Xinxing Li Jinfeng Zhang Chuan Liu Zheng Cui Jianwen Zhao Printable Electronics Research Center Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou215123China School of Engineering Westlake UniversityHangzhou310024China Zhejiang University Hangzhou310027China The Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong province Key Laboratory of Display Material and Technology School of Electronics and Information TechnologySun Yat-sen UniversityGuangzhou510275China

It is a big challenge to construct large-scale,high-resolution and high-performance inkjet-printed metal oxide thin film transistor(TFT)arrays with independent gates for the new printed ***,a self-confined inkjet printing technology has been developed to construct large-area(64×64 array),high-resolution and high-performance metal oxide bilayer(In_(2)O_(3)/IGZO)heterojunction TFTs with independent bottom gates on transparent glass *** printing In_(2)O_(3) dot arrays with the diameters from 55 to 70μm and the thickness of~10 nm were firstly deposited on UV/ozone treated AlO_(x) dielectric layers,and then IGZO dots were selectively printed on the top of In_(2)O_(3) dots by self-confined technology to form In_(2)O_(3)/IGZO heterojunction *** the inkjet-printed IO layers treated by UV/ozone for more than 30 min or oxygen plasma for 5 min prior to print IGZO thin films,the mobility of the resulting printed In_(2)O_(3)/IGZO heterojunction TFTs are correspondingly enhanced to be 18.80 and 28.44 cm^(2) V^(-1) s^(-1) with excellent on/off ratios(>10^(8))and negligible ***,the printed N-Metal-Oxide-Semiconductor(NMOS)inverter consisted of an In_(2)O_(3)/IGZO TFT and an IGZO TFT has been demonstrated,which show excellent performance with the voltage gain up to *** strategy demonstrated here can be considered as general approaches to realize a new generation of high-performance printed logic gates,circuits and display driving circuits.

关键词： Inkjet printing Heterojunction channel 64×64 arrays High mobility NMOS inverter

Paper-based all-solid-state flexible asymmetric micro-supercapacitors fabricated by a simple pencil drawing methodology

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Chinese Chemical Letters 2018年第4期29卷 587-591页

作者： Lanqian Yao Tao Cheng Xiaoqin Shen Yizhou Zhang Wenyong Lai Wei Huang Key Laboratory for Organic Electronics and Information Displays (KLOEID) Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications Nanjing 210023 China Shaanxi Institute of Flexible Electronics (SIFE) Northwestern Polytechnical University (NPU) Xi'an 710072 China

Flexible micro-scale energy storage devices as the key component to power the flexible miniaturized electronic devices are attracting extensive attention. In this study, interdigitated asymmetric all-solidstate flexible micro-supercapacitors（MSCs） were fabricated by a simple pencil drawing process followed by electrodepositing MnO_2 on one of the as-drawn graphite electrode as anode and the other as *** as-prepared electrodes showed high areal specific capacitance of 220 μF/cm^2 at 2.5 μA/cm^2. The energy density and the corresponding power density of the resultant asymmetrical flexible MSCs were up to 110 μWh/cm^2 and 1.2 μW/cm^2, respectively. Furthermore, excellent cycling performance（91% retention of capacity after 1000 cycles） was achieved. The resultant devices also exhibited good electrochemical stability under bending conditions, demonstrating superior flexibility. This study provides a simple yet efficient methodology for designing and fabricating flexible supercapacitors applicable for portable and wearable electronics.

关键词： Flexible electronics Flexible supercapacitors Micro-supercapacitors Paper-based electronics Pencil drawing Flexible electronics Flexible supercapacitors Micro-supercapacitors Paper-based electronics Pencil drawing

Microstructure evolution of T91 steel after heavy ion irradiation at 550℃

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Chinese Physics B 2021年第8期30卷 61-69页

作者： Ligang Song Bo Huang Jianghua Li Xianfeng Ma Yang Li Zehua Fang Min Liu Jishen Jiang Yanying Hu Sino-French Institute of Nuclear Engineering and Technology Sun Yat-Sen UniversityZhuhai 519082China State Key Laboratory of Nonlinear Mechanics(LNM) Institute of MechanicsChinese Academy of SciencesBeijing 100190China DEN-Service de Recherches Metallurgiques Appliquees CEAUniversite Paris-SaclayGif-sur-Yvette 91191France Department of Mechanical and Aerospace Engineering University of California Los AngelesLos AngelesCA 90095USA

Fe-Cr ferritic/martensitic(F/M)steels have been proposed as one of the candidate materials for the Generation IV nuclear *** this study,a widely-used ferritic/martensitic steel,T91 steel,was irradiated by 196-MeV Kr^(+)ions at 550℃.To reveal the irradiation mechanism,the microstructure evolution of irradiated T91 steel was studied in details by transmission electron microscope(TEM).With increasing dose,the defects gradually changed from black dots to dislocation loops,and further to form dislocation walls near grain boundaries due to the production of a large number of *** many dislocation loops of primary a0/2type with high migration interacted with other defects or carbon atoms,it led to the production of dislocation segments and other dislocation loops of a0*** of defects accumulated near grain boundaries in the irradiated area,especially in the high-dose *** grain boundaries of martensite laths acted as important sinks of irradiation defects in *** temperature facilitated the migration of defects,leading to the accumulation of defects near the grain boundaries of martensite laths.

关键词： T91 steel high energy Kr ions irradiation irradiation defects transmission electron microscope(TEM)

Electronic transmission of three-terminal pyrene molecular bridge

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Chinese Physics B 2009年第2期18卷 501-505页

作者：王利光张秀梅 Terence Kin Shun Wong Katsunori Tagami Masaru Tsukada School of Science Jiangnan University School of Electrical and Electronic Engineering Nanyang Technological University Nano Technology Research Centre Waseda University

This paper investigates theoretically the electronic transmission spectra of the three terminal pyrene molecular bridge and the quantum current distribution on each bond by the tight-binding model based on nonequilibrium Green＇s function and the quantum current density approach, in which one π molecular orbital is taken into account per carbon atom when the energy levels and HOMO-LUMO gap are obtained. The transmission spectra show that the electronic transmission of the three terminal pyrene molecular bridge depends obviously on the incident electronic energy and the pyrene eigenenergy. The symmetrical and oscillation properties of the transmission spectra are illustrated. A novel plus-minus energy switching function is found. The quantum current distribution shows that the loop currents inside the pyrene are induced, and some bond currents are much larger than the input and the output currents. The reasons why the loop currents and the larger bond currents are induced are the phase difference of the atomic orbits and the degeneracy of the molecular orbits. The calculations illustrate that the quantum current distributions are in good agreement with Kirchhoff quantum current conservation law.

关键词： pyrene three terminals electronic transmission current distribution

Inkjet printed large-area flexible circuits:a simple methodology for optimizing the printing quality

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Journal of Semiconductors 2018年第1期39卷 224-231页

作者： Tao Cheng Youwei Wu Xiaoqin Shen Wenyong Lai Wei Huang Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Institute of Advanced Materials (IAM) JiangsuNational Synergetic Innovation Center for Advanced Materials(SICAM) Nanjing University of Posts & Telecommunications Shaanxi Institute of Flexible Electronics(SIFE) Northwestern Polytechnical University (NPU)

In this work, a simple methodology was developed to enhance the patterning resolution of inkjet printing, involving process optimization as well as substrate modification and treatment. The line width of the inkjetprinted silver lines was successfully reduced to 1/3 of the original value using this methodology. Large-area flexible circuits with delicate patterns and good morphology were thus fabricated. The resultant flexible circuits showed excellent electrical conductivity as low as 4.5 Ω/□ and strong tolerance to mechanical bending. The simple methodology is also applicable to substrates with various wettability, which suggests a general strategy to enhance the printing quality of inkjet printing for manufacturing high-performance large-area flexible electronics.

关键词： inkjet printing flexible circuits patterning resolution large-area electronics flexible electronics

Failure mechanism of pump chambers and their optimized design in deep mining at Qishan Coal Mine

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Mining Science and Technology 2010年第6期20卷 825-830页

作者： SUN Xiaoming WU Chuangzhou CAI Feng State Key Laboratory of Deep Rock Mechanics and Engineering Beijing 100083 China School of Mechanics and Civil Engineering China University of Mining & Technology Beijing 100083 China

Pump chambers, normally used as dominant structures in mining engineering to insure the safety and production of un-derground coal mines, become generally deformed under conditions of deep mining. Given the geology and engineering condition of Qishan Coal Mine in Xuzhou, the failure characteristics of pump chambers at the –1000 m level show that the main cause can be attributed to the spatial effect induced by intersectional chambers, where one pump is constructed per well. We developed an opti-mized design of the pump room, in which the pump wells in the traditional design are integrated into one compounding well. We suggest that the new design can limit the spatial effect of intersectional chambers during construction given our relevant numerical simulation. The new design is able to simplify the structure of the pump chamber and reduce the amount of excavation required. Based on a bolt-mesh-anchor with a rigid gap coupling supporting technology, the stability of pump chamber can be improved greatly.

关键词： deep mining pump chambers failure mechanism numerical simulation optimized design

The origin of distorted intensity pattern sensed by a lens and antenna coupled AlGaN/GaN-HEMT terahertz detector

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Chinese Physics B 2019年第11期28卷 388-393页

作者： Xiang Li Jian-Dong Sun Hong-Juan Huang Zhi-Peng Zhang Lin Jin Yun-Fei Sun V V Popov Hua Qin Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China School of Nano Technology and Nano Bionics University of Science and Technology of ChinaHefei 230026China Nanofabrication facility of the Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123China College of Electronic and Information Engineering Suzhou University of Sciences and TechnologySuzhou 215009China Kotelnikov Institute of Radio Engineering and Electronics Saratov BranchRussian Academy of SciencesSaratov 410019Russia

Antenna-coupled field-effect-transistors(FETs) offer high sensitivity for terahertz detection. Both the magnitude and the polarity of the response signal are sensitive to the localized terahertz field under the gate. The ability of accurate sensing the intensity pattern is required for terahertz imaging systems. Here, we report artefacts in the intensity pattern of a focused terahertz beam around 1 THz by scanning a silicon-lens and antenna coupled AlGaN/GaN high-electron-mobility-transistor(HEMT) detector. The origin of the image distortion is found to be connected with one of the antenna blocks by probing the localized photocurrents as a function of the beam location and the frequency. Although the exact distortion is found with our specific antenna design, we believe similar artefacts could be commonplace in antenna-coupled FET terahertz detectors when the beam spot becomes comparable with the antenna size. To eliminate such artefacts, new antenna designs are welcomed to achieve strong asymmetry in the terahertz field distribution under the gate while maintaining a more symmetric radiation pattern for the whole antenna.

关键词： terahertz detector self-mixing high electron mobility transistor local electrical field

Bioinspired Activation of N_(2) on Asymmetrical Coordinated Fe Grafted 1T MoS_(2) at Room Temperature

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Chinese Journal of Chemistry 2021年第7期39卷 1898-1904页

作者： Jiaojiao Guo Maoyu Wang Liang Xu Xiaomin Li Asma Iqbal George ESterbinsky Hao Yang Miao Xie Jiantao Zai Zhenxing Feng Tao Cheng Xuefeng Qian School of Chemistry and Chemical Engineering and State Key Laboratory of Metal Matrix Composites Shanghai Jiao Tong UniversityShanghai200240 China School of Chemical Biologicaland Environmental EngineeringOregon State UniversityCorvallisOR97331 USA Institute of Functional Nano and Soft Materials(FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials and DevicesSoochow UniversitySuzhouJiangsu215123 China Advanced Photon Source Argonne National LaboratoryArgonneIL60431 USA Instrumental Analysis Center Shanghai Jiao Tong UniversityShanghai200240 China

Main observation and conclusion Inspired by the nitrogen fixation process on MoFe nitrogenase,asymmetrical coordinated Fe grafted onto 1T MoS_(2) were successfully *** unique electron-rich structure with asymmetrical coordination made the 1T Fe_(0.1)Mo_(0.9)S_(2) layered material actively react with water and dinitrogen at room temperature and atmosphere pressure.

关键词： Monolayers Redox chemistry Electron transfer Nitrogen fixation 1T MoS_(2)

Microstructure, mechanical properties and corrosion behavior of commercial 7N01 alloys

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Transactions of Nonferrous Metals Society of China 2022年第3期32卷 778-789页

作者： Pei-hao ZHAO Xiao-lan WU Yang LIU Kun-yuan GAO Sheng-ping WEN Wu WEI Li RONG Hui HUANG Hong WU De-jing ZHOU Qian ZHANG Zuo-ren NIE Faculty of Materials and Manufacturing Beijing University of TechnologyBeijing 100124China State Key Laboratory of Powder Metallurgy Central South UniversityChangsha 410083China jiangsu Key Laboratory for Clad Materials Yin Bang Clad Material Co.Ltd.Wuxi 214145China Metal&Chemistry Institute China Academy of Railway Sciences Corporation LimitedBeijing 100081China

The effect of grain morphology and precipitates on mechanical properties and corrosion behavior of two commercial 7 N01 alloys was studied using transmission electron microscopy(TEM) and scanning electron microscopy(SEM) equipped with electron backscatter diffraction(EBSD). Results showed that the recrystallization degree of the outer surface of 7 N01-I alloy was lower than that of 7 N01-II alloy. The main strengthening precipitates of two alloys were mainly η’ phases. The grain boundary precipitates(GBPs) of 7 N01-I alloy distributed discontinuously, while those of 7 N01-II alloy distributed continuously. The strength of two 7 N01 alloys was similar, but the maximum corrosion depth of 7 N01-I alloy was less than that of 7 N01-II alloy, because the discontinuous GBPs and the lower recrystallization degree of outer surface of 7 N01-I alloy were favorable for improving corrosion behavior. Different models of strengthening mechanism were discussed, and the corrosion behavior was correlated with microstructure.

关键词： 7N01 alloys microstructure mechanical properties corrosion behavior