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双沟槽SiC MOSFET总剂量效应研究

物理学报 2025年

作者：朱文璐郭红霞李洋帆马武英张凤祁白如雪钟向丽李济芳曹彦辉琚安安湘潭大学材料科学与工程学院西北核技术研究所

本文对第四代双沟槽型碳化硅场效应晶体管开展了不同栅极偏置电压下的60Co-γ辐照试验，并在辐照后进行了室温退火试验。实验结果表明辐照后器件的阈值电压负向漂移，且在正向栅极偏压下电学性能退化尤为明显。通过分析器件的1/f噪声特... 详细信息

本文对第四代双沟槽型碳化硅场效应晶体管开展了不同栅极偏置电压下的60Co-γ辐照试验，并在辐照后进行了室温退火试验。实验结果表明辐照后器件的阈值电压负向漂移，且在正向栅极偏压下电学性能退化尤为明显。通过分析器件的1/f噪声特性发现，在不同栅极偏置条件下辐照后器件的漏极电流噪声归一化功率谱密度升高了4～9个数量级，这表明辐照后器件内部缺陷密度显著增加。对辐照后器件进行了24、48和168小时的室温退火实验，退火后器件阈值电压有所升高，表明器件的电学性能在室温下可以部分恢复，主要因为辐照产生的浅氧化物陷阱电荷在室温下退火，而深氧化物陷阱电荷和界面陷阱电荷在室温难以恢复。结合TCAD仿真模拟进一步分析器件总剂量效应微观机制，结果表明辐照在氧化层中诱生的大量氧化物陷阱电荷造成栅极氧化层中靠近沟道一侧的电场强度增大，导致器件的阈值电压负向漂移，影响器件性能。

关键词：双沟槽碳化硅低频噪声总剂量效应

Thickness and sp3 bond modulation of（Ti/tetrahedral amorphous carbon）_n multilayer coatings

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Tungsten 2025年第1期 152-160页

作者： Zhi-Jun Xie Jia-Lin Li Ling Gong Xiang-Li Zhong Hong-Jia Song Jin-Bin Wang National-Provincial Laboratory of Special Function Thin Film Materials School of Materials Science and Engineering Xiangtan University

The durability of wear-resistant tetrahedral amorphous carbon（ta-C） coatings is intimately linked to their thickness and the concentration of *** enhance the lifespan of the coatings,we have prepared a multilayer coating consisting of alternating layers of Ti and ta-C,denoted as（Ti/ta-C）_n,using arc ion plating.A multi-layer structure in conjunction with stage cooling is employed to enhance the thickness and promote *** results indicate that the ID/IGvalue,representing the ratio of the intensity of the D peak to that of the G peak in Raman spectroscopy,decreases from 0.85 when no stage cooling is applied to 0.35 when stage cooling is employed,suggesting an enhancement in the fraction of sp3bonds within the *** obtained（Ti/ta-C）_n multilayer coating without peeling off has a maximum thickness of 1.14 μm,which is almost double that of the ta-C coating single layer *** the same time,the coating has a low coefficient of friction,down to 0.069,and maintains excellent friction properties with a wear rate of 3.4×10-6mm3·N-1·*** results conclusively show that the preparation technology can enhance both thickness and sp3bonding in ta-C coatings,significantly expanding their utility across tools,molds,and precision engineering components.

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Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

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Chinese Physics B 2024年第1期33卷 554-562页

作者：冯亚辉郭红霞刘益维欧阳晓平张晋新马武英张凤祁白如雪马晓华郝跃 State Key Laboratory of Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian UniversityXi'an 710071China School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China School of Space Science and Technology Xidian UniversityXi'an 710071China State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation Northwest Institute of Nuclear TechnologyXi'an 710024China

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases ***, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

关键词： silicon–germanium heterojunction bipolar transistor(Si Ge HBT) 100-Me V proton technology computer-aided design(TCAD) single event effect(SEE)

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

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Chinese Physics B 2023年第6期32卷 420-428页

作者：冯亚辉郭红霞潘霄宇张晋新钟向丽张鸿琚安安刘晔欧阳晓平 School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China State Key Laboratory of Experimental Simulation and Effects of Strong Pulse Radiation Northwest Institute of Nuclear TechnologyXi'an 710024China School of Space Science and Technology Xidian UniversityXi'an 710071China

The single event effect of a silicon–germanium heterojunction bipolar transistor(SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed *** variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was ***, the single event transient produced by laser irradiation at a wavelength of 532 nm was more pronounced than at a wavelength of 1064 nm. Finally, the impact of the equivalent linear energy transfer of the 1064 nm pulsed laser on the single event transient was qualitatively examined by performing technology computer-aided design simulations, and a good consistency between the experimental data and the simulated outcomes was attained.

关键词： silicon-germanium heterojunction bipolar transistor pulsed laser single event effect equivalent linear energy transfer(LET)value

An optimized numerical method to pre-researching the performance of solid-phase oxygen control in a non-isothermal lead–bismuth eutectic loop

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Nuclear Science and Techniques 2022年第3期33卷 77-88页

作者： Xiao-Bo Li Rui-Xian Liang Yi-Feng Wang Hui-Ping Zhu Fang Liu Yang Liu Cong Li Hao Wu Feng-Lei Niu School of Nuclear Science and Engineering North China Electric Power UniversityBeijing 102206China

In the present work,a new transient calculation method for parameters that can be used to evaluate the ability of oxygen control in a non-isothermal lead-bismuth eutectic(LBE)loop with solid-phase oxygen control was *** incorporates the dissolution process of PbO particles and the oxygen mass transfer process,and an optimized method was used for finding out the optimized oxygen mass transfer *** numerical terms,three mass transfer models were simultaneously applied,and comparisons of calculated and experimental results from the CRAFT loop indicated that the optimized calculation method and these new oxygen mass transfer models were correct and applicable to other LBE *** this calculation method,we aimed to optimize prediction of the distribution of oxygen and iron concentrations,time taken to establish the steady state of oxygen,and maximum dissolution/precipitation rates of corrosion products and corrosion depth across the entire LBE *** hope that this work will provide a potential reference for designing a more intelligent oxygen control system in the future.

关键词： LBE Solid-phase oxygen control Operating domain Operating model Corrosion depth Dissolution/precipitation

Ultrathin surface coating of Cu enabling long-life Zn metal anodes

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Rare Metals 2024年第5期43卷 2125-2135页

作者： Sang-Sang Liu Ya-Ru Liang Wen-Long Chen Ze-Hua Wang Yi-Long Dai Fu-Gang Qi Zeng-Sheng Ma Xiao-Ping Ouyang School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education Xiangtan UniversityXiangtan 411105China

Aqueous zinc-ion batteries(AZIBs)are regarded as promising energy storage devices due to their low cost,high capacity,and ecological ***,the severe dendritic growth and side reactions hinder their practical applicability ***,an ultrathin Cu coating layer(~200 nm)is decorated on zinc foils via filtered cathodic vacuum arc deposition technology,aiming to achieve high-performance *** Cu layer effectively suppresses chemical corrosion and hydrogen evolution reactions and enables preferential(002)Zn deposition during the stripping/plating ***,the Cu@Zn anode represents an elongated cycle life over 4,000 h at 2 mA·cm^(-2)/2 mAh·cm^(-2).Even in conditions of high current density of 5 and 10 mA·cm^(-2),the Cu@Zn anode shows prolonged cycling stability exceeding 4000 and 2000 h,*** advantages also bring high Coulombic efficiency of 99.87%under 5 mAh·cm^(-2)in Cu@Ti||Zn half-cell over 1500 ***,the Cu@Zn||MnO_(2)full cell demonstrates a superior cyclability with a specific capacity of 203 mAh·g^(-1)after 500 cycles a1 A·g^(-1).

关键词： Zn ion battery Zn metal anode Zn(002)plane Cu coating

Achieving a high-strength dissimilar joint of T91 heat-resistant steel to 316L stainless steel via friction stir welding

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International Journal of Minerals,Metallurgy and Materials 2023年第1期30卷 166-176页

作者： Zhiwei Wang Min Zhang Cong Li Fenglei Niu Hao Zhang Peng Xue Dingrui Ni Bolv Xiao Zongyi Ma CAS Key Laboratory of Nuclear Materials and Safety Assessment Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Nuclear Science and Engineering North China Electric Power UniversityBeijing 102206China Shi Changxu Innovation Center for Advanced Materials Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China

The reliable welding of T91 heat-resistant steel to 316L stainless steel is a considerable issue for ensuring the safety in service of ultrasupercritical power generation unit and nuclear fusion reactor,but the high-quality dissimilar joint of these two steels was difficult to be obtained by traditional fusion welding *** we improved the structure-property synergy in a dissimilar joint of T91 steel to 316L steel via friction stir welding.A defect-free joint with a large bonding interface was produced using a small-sized tool under a relatively high welding *** bonding interface was involved in a mixing zone with both mechanical mixing and metallurgical *** obvious material softening was detected in the joint except a negligible hardness decline of only HV~10 in the heat-affected zone of the T91 steel side due to the formation of ferrite *** welded joint exhibited an excellent ultimate tensile strength as high as that of the 316L parent metal and a greatly enhanced yield strength on account of the dependable bonding and material renovation in the weld *** work recommends a promising technique for producing high-strength weldments of dissimilar nuclear steels.

关键词： heat-resistant steel stainless steel friction stir welding dissimilar welding microstructure mechanical property

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石墨烯场效应晶体管的X射线总剂量效应

物理学报 2024年第5期73卷 344-350页

作者：李济芳郭红霞马武英宋宏甲钟向丽李洋帆白如雪卢小杰张凤祁湘潭大学材料科学与工程学院湘潭411105 西北核技术研究所西安710024

本文针对不同结构、尺寸的石墨烯场效应晶体管(graphene field effect transistors,GFET)开展了基于10 keV-X射线的总剂量效应研究.结果表明,随累积剂量的增大,不同结构GFET的狄拉克电压V_(Dirac)和载流子迁移率μ不断退化;相比于背栅型... 详细信息

本文针对不同结构、尺寸的石墨烯场效应晶体管(graphene field effect transistors,GFET)开展了基于10 keV-X射线的总剂量效应研究.结果表明,随累积剂量的增大,不同结构GFET的狄拉克电压V_(Dirac)和载流子迁移率μ不断退化;相比于背栅型GFET,顶栅型GFET的辐射损伤更加严重;尺寸对GFET器件的总剂量效应决定于器件结构;200μm×200μm尺寸的顶栅型GFET损伤最严重,而背栅型GFET是50μm×50μm尺寸的器件损伤最严重.研究表明:对于顶栅型GFET,辐照过程中在栅氧层中形成的氧化物陷阱电荷的积累是V_(Dirac)和μ降低的主要原因.背栅型GFET不仅受到辐射在栅氧化层中产生的陷阱电荷的影响,还受到石墨烯表面的氧吸附的影响.在此基础上,结合TCAD仿真工具实现了顶栅器件氧化层中辐射产生的氧化物陷阱电荷对器件辐射响应规律的仿真.相关研究结果对于石墨烯器件的抗辐照加固研究具有重大意义.

关键词：石墨烯场效应晶体管 X射线辐照总剂量效应

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CMOS图像传感器质子位移损伤效应实验与分析

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光学学报 2024年第13期44卷 297-305页

作者：杨洁铖殷倩郭刚张艳文李理钟向丽湘潭大学材料科学与工程学院湖南湘潭411105 中国原子能科学研究院国家原子能机构抗辐照应用技术创新中心北京102413

为了分析不同能量质子辐射引发的位移损伤对CMOS图像传感器(CIS)参数影响的差异,以商用CIS为研究对象,在中国原子能科学研究院回旋加速器上开展了50 MeV和90 MeV质子辐照实验,分析了不同能量及注量的质子辐照下器件的暗信号、热像素和... 详细信息

为了分析不同能量质子辐射引发的位移损伤对CMOS图像传感器(CIS)参数影响的差异,以商用CIS为研究对象,在中国原子能科学研究院回旋加速器上开展了50 MeV和90 MeV质子辐照实验,分析了不同能量及注量的质子辐照下器件的暗信号、热像素和随机电码信号(RTS)等参数的退化规律。实验结果表明:平均暗信号的增加可以用位移损伤剂量等效,而相同位移损伤剂量下50 MeV质子辐照后表现出更大的暗信号非均匀性(DSNU)和热像素。像素间RTS现象是质子辐照后不同类型的缺陷所导致的。计算机辅助设计技术(TCAD)模拟结果表明深能级的点缺陷导致载流子浓度更高的热产生率,且团簇缺陷产生率高于简单点缺陷,产生率的不同导致像素间暗信号产生差异,进而产生DSNU和RTS现象。

关键词： CMOS图像传感器质子暗信号随机电码信号缺陷