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Chinese Physics B 2014年第3期23卷 493-497页

作者：林芳沈波卢励吾许福军刘新宇魏珂 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Institute of Microelectronics of Chinese Academy of Sciences

By using temperature-dependent current-voltage, variable-frequency capacitance-voltage, and Hall measurements, the effects of the thermal oxidation on the electrical properties of Ni/Au Schottky contacts on lattice-matched Ino.18Alo.82N/GaN heterostructures are investigated. Decrease of the reverse leakage current down to six orders of magni- tude is observed after the thermal oxidation of the Ino.18Alo.82N/GaN heterostructures at 700 ℃. It is confirmed that the reverse leakage current is dominated by the Frenkel-Poole emission, and the main origin of the leakage current is the emis- sion of electrons from a trap state near the metal/semiconductor interface into a continuum of electronic states associated with the conductive dislocations in the InxAll-xN barrier. It is believed that the thermal oxidation results in the formation of a thin oxide layer on the InxAll-xN surface, which increases the electron emission barrier height.

关键词： leakage current thermal oxidation Frenkel-Poole emission

Localized deep levels in Al_xGa_(1-x)N epitaxial films with various Al compositions

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Chinese Physics B 2014年第11期23卷 422-426页

作者：时俪洋沈波闫建昌王军喜王平 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University R&D Center for Semiconductor Lighting Institute of Semiconductors Chinese Academy of Sciences

By using high-temperature deep-level transient spectroscopy （HT-DLTS） and other electrical measurement techniques, localized deep levels in n-type AlxGal xN epitaxial films with various A1 compositions （x = 0, 0.14, 0.24, 0.33, and 0.43） have been investigated. It is found that there are three distinct deep levels in AlxGal-xN films, whose level position with respect to the conduction band increases as AI composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in AlxGa1-xN films.

关键词： localized deep levels current-voltage capacitance-voltage high-temperature deep-level transientspectroscopy techniques

Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template

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Chinese Physics B 2014年第10期23卷 383-387页

作者：黄呈橙张霞许福军许正昱陈广杨志坚唐宁王新强沈波 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Collaborative Innovation Center of Quantum Matter

Epitaxial evolution of buried cracks in a strain-controlled AIN/GaN superlattice interlayer （IL） grown on GaN tem- plate, resulting in crack-free AIGaN/GaN multiple quantum wells （MQW）, was investigated. The processes of filling the buried cracks include crack formation in the IL, coalescence from both side walls of the crack, build-up of an MQW-layer hump above the cracks, lateral expansion and merging with the surrounding MQW, and two-dimensional step flow growth. It was confirmed that the filling content in the buried cracks is pure GaN, originating from the deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms into the cracks plays a key role in the filling the buried cracks.

关键词： AIGaN/GaN multiple quantum wells epitaxial evolution

Growth of N-polar GaN on vicinal sapphire substrate by metal organic chemical vapor deposition

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Rare Metals 2014年第6期33卷 709-713页

作者： Can-Tao Zhong Guo-Yi Zhang State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University

The growth and properties of N-polar Ga N layers by metal organic chemical vapor deposition（MOCVD） were reported. It is found that N-polar Ga N grown on normal sapphire substrate shows hexagonal hillock surface morphology. With the misorientation angles increasing from 0.5° to 2.0° toward the a-plane of the sapphire substrate, the number of the hillock becomes less and less and finally the surface becomes flat one on the sapphire substrate with the misorientation angle of 2°. It is also found that the crystalline quality and the strain in the Ga N are greatly influenced by the misorientation angle.

关键词： GaN N-polarity Metal organic chemical vapor deposition

Ⅲ族氮化物半导体异质结构中载流子的量子输运和自旋性质

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中国科学：物理学、力学、天文学 2013年第10期43卷 1176-1187页

作者：唐宁段俊熙张姗许福军王新强沈波北京大学物理学院人工微结构和介观物理国家重点实验室北京100871

Ⅲ族氮化物半导体具有宽的直接带隙,很强的极化电场,优异的物理特性,是发展高频、高温、高功率电子器件和光电子器件的优选材料.同时,Ⅲ族氮化物半导体有很长的电子自旋弛豫时间以及很高的居里温度,也成为近年来半导体自旋电子学研究的... 详细信息

Ⅲ族氮化物半导体具有宽的直接带隙,很强的极化电场,优异的物理特性,是发展高频、高温、高功率电子器件和光电子器件的优选材料.同时,Ⅲ族氮化物半导体有很长的电子自旋弛豫时间以及很高的居里温度,也成为近年来半导体自旋电子学研究的重要材料体系之一.本文介绍了用量子输运和自旋光电流方法对GaN基异质结构中载流子的量子输运和自旋性质的研究进展.对Ⅲ族氮化物半导体中的能带结构,子带占据和散射,自旋分裂及自旋轨道耦合机制等进行了讨论.

关键词：宽禁带半导体输运自旋