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Analysis and Comparison of Doping Level Effects on a Crystalline Silicon PV Cell under Both Moderate Light Concentration and Normal Illumination Modes

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Energy and Power Engineering 2022年第10期14卷 523-540页

作者： Mahamadi Savadogo Adama Ouedraogo Boubacar Soro zi daouda koudougou Martial Zoungrana Issa Zerbo Laboratory of Thermal and Renewable Energies Department of Physics Unit of Training and Research in Pure and Applied Sciences University Joseph Ki-Zerbo Ouagadougou Burkina Faso Centre Universitaire Polytechnique de Kaya (CUP-Kaya) Kaya Burkina Faso Institut des Sciences et Technologies Ouagadougou Burkina Faso

The main purpose of this work is to study doping level effects on a silicon PV cell under both moderate light concentration and normal illumination. This study also aims to compare the doping level effects under the both illumination modes. The results show for both illumination modes that diffusion parameters decrease with increasing doping level. These results are in agreement with the studies of the current and the voltage which showed for the two illumination modes that doping level increase leads to a decrease in current density and an increase in voltage. It also emerges for the two illumination modes and for the doping range 1013 cm-3 - 1016 cm-3, a decrease of maximum power and conversion efficiency. The results also show that decrease of diffusion parameters is faster under moderate concentration in comparison with normal illumination. These results predict a greater variation rate of the current, the voltage, the maximum power and the conversion efficiency under moderate concentration compared to normal illumination. Contrary to diffusion parameters study, the results show higher variation rates of parameters under normal illumination. This is explained by the fact that under moderate concentration, carriers density is close to doping level: the cell is then in high injection condition. Consequently, under moderate concentration, carriers density is less sensitive to doping level variations. The study confirms that carriers density variation with the doping level is weak under the moderate concentration compared to normal illumination.

关键词： Moderate Light Concentration Doping Level High Injection Diffusion Parameters Conversion Efficiency

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Analysis and Comparison of Doping Level Effects on a Crystalline Silicon PV Cell under Both Moderate Light Concentration and Normal Illumination Modes

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Energy and Power Engineering 2022年第10期

作者： mahamadi savadogo adama ouedraogo boubacar soro zi daouda koudougou martial zoungrana issa zerbo

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