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Alleviatory effect of isoquercetin on benign prostatic hyperplasia via IGF-1/PI3K/Akt/mTOR pathway

Food Science and Human Wellness 2024年第3期13卷 1698-1710页

作者： young-jin choi Meiqi Fan Nishala Erandi Wedamulla Yujiao Tang Eun-Kyung Kim Department of Food Science and Nutrition Dong-A UniversityBusan 49315Republic of Korea Center for Silver-targeted Biomaterials Brain Busan 21 Plus programDong-A UniversityBusan 49315Republic of Korea Department of Health Sciences the Graduate School of Dong-A UniversityBusan 49315Republic of Korea Division of Food Bioscience College of Biomedical and Health SciencesKonkuk UniversityChungju 27478Republic of Korea Department of Export Agriculture Faculty of Animal Science and Export AgricultureUva Wellassa UniversityBadulla 90000Sri Lanka School of Bio-Science and Food Engineering Changchun University of Science and TechnologyChangchun 130600China Nutritional Education Major Graduate School of EducationDong-A UniversityBusan 49315Republic of Korea Nutrinomics Lab.Co. Ltd.Busan 49315Republic of Korea

We evaluated the effect of isoquercetin(quercetin-O-3-glucoside-quercetin,IQ)as a functional component of Abeliophyllum disistichum Nakai ethanol extract(ADLE)on prostate cell proliferation and apoptosis and its effects on the IGF-1/PI3K/Akt/mTOR pathway in benign prostatic hyperplasia(BPH).Metabolites in ADLE were analyzed using UHPLC-qTOF-MS and *** was orally administered(1 or 10 mg/kg)to a testosterone propionate-induced BPH rat model,and its effects on the prostate weight were *** effect of IQ on androgen receptor(AR)signaling was analyzed in LNCaP *** IGF-1 and IQ affect the IGF-1/PI3K/Akt/mTOR pathway in BPH-1 cells was also *** metabolites in ADLE were identified and quantified,which confirmed that ADLE contained abundant IQ(20.88 mg/g).IQ significantly reduced the prostate size in a concentration-dependent manner in a BPH rat model,and significantly decreased the expression of AR signaling factors in the rat prostate tissue and LNCaP cells in a concentration-dependent *** also inhibited the PI3K/AKT/mTOR pathway activated by IGF-1 treatment in BPH-1 *** BPH-1 cells,IQ led to G0/G1 arrest and suppressed the expression of proliferation factors while inducing ***,IQ shows potential for use as a pharmaceutical and nutraceutical for BPH.

关键词： Isoquercetin Benign prostatic hyperplasia Androgen receptor signaling PI3K/Akt/mtor pathway

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Migration of the localization wire to the back in patient with nonpalpable breast carcinoma: A case report

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World Journal of Clinical Cases 2021年第26期9卷 7863-7869页

作者： young jin choi Department of Surgery Chungbuk National University HospitalChungbuk National University College of MedicineCheongju 28644South Korea

BACKGROUND Due to the increasing number of diagnosed nonpalpable breast cancer cases,wire localization has been commonly performed for surgical guidance to remove nonpalpable breast *** report presents a rare case of localized wire migration to a subcutaneous lesion of the upper back in a breast cancer patient undergoing breast-conserving *** SUMMARY A 48-year-old female was scheduled for breast-conserving surgery for left breast *** guided wire localization was performed intraoperatively by surgeon to localize the nonpalpable breast *** axilla sentinel lymph node biopsy,we realized that the wire was not *** wire was not found in the operation field,including the breast and ***-conserving surgery was performed after wire *** chest posteroanterior view revealed that the wire was located on the level of midaxillary *** days after the operation,a serial simple X-ray revealed that the wire was located on the subcutaneous lesion of the *** wire tip was palpable under the skin of the upper back,and the wire was removed under local *** Hooked wire misplacement can lead to fatal *** must consider the possibility of wire migration during breast cancer surgery.

关键词： Breast carcinoma Hooked wire Migration Nonpalpable breast lesion Wire localization Case report

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Lymph-node-first presentation of Kawasaki disease in a 12-year-old girl with cervical lymphadenitis caused by Mycoplasma pneumoniae:A case report

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World Journal of Clinical Cases 2022年第10期10卷 3170-3177页

作者： Nayoung Kim young-jin choi Jae Yoon Na Jae-Won Oh Department of Pediatrics Hanyang University Seoul HospitalSeoul 04763South Korea Department of Pediatrics Hanyang University Guri HospitalGuri-si 11923South Korea Department of Pediatrics Hanyang University School of MedicineSeoul 04763South Korea

BACKGROUND To the best of our knowledge,cases of Kawasaki disease(KD)occurring at the age of 12 are rare,even in Asia where the incidence of KD is *** report a case of lymph-node-first presentation of KD(NFKD)in a 12-year-old girl with Mycoplasma pneumoniae(***)infection who presented with prolonged fever and lymphadenitis refractory to macrolide *** SUMMARY A previously healthy 12-year-old girl presented with fever,myalgia,sore throat,swelling,and tenderness on the right side of the *** was initially diagnosed with lymphadenitis caused by *** refractory to macrolide *** had elevated brain natriuretic peptide(BNP)***,the patient was diagnosed with *** receiving intravenous immunoglobulin,the fever resolved,and her symptoms *** NFKD should be differentiated from adolescent lymphadenitis presenting with prolonged fever by checking the BNP level early.

关键词： Lymphadenopathy Mycoplasma pneumoniae Node-first presentation of Kawasaki disease Case report

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On a Parasitic Bipolar Transistor Action in a Diode ESD Protection Device

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Circuits and Systems 2016年第9期7卷 2286-2295页

作者： jin young choi Department of Electronic & Electrical Engineering Hongik University Sejong Korea

In this work, we show that an excessive lattice heating problem can occur in the diode electrostatic discharge (ESD) protection device connected to a VDD bus in the popular diode input protection scheme, which is favorably used in CMOS RF ICs. To figure out the reason for the excessive lattice heating, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-D device simulator. We analyze the simulation results in detail to show out that a parasitic pnp bipolar transistor action relating nearby p+-substrate contacts is responsible for the excessive lattice heating in the diode protection device, which has never been focused before anywhere.

关键词： ESD Protection Diode Protection Device Bipolar Transistor Mixed-Mode Simulation RF IC

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Discharge Characteristics of a Triple-Well Diode-String ESD Clamp

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Circuits and Systems 2018年第5期9卷 75-86页

作者： jin young choi Department of Electronic & Electrical Engineering Hongik University Sejong Korea

In this work, DC and transient characteristics of a 4 diode string utilizing triple-well technologies as a VDD-VSS clamp device for ESD protection are analyzed in detail based on 2-dimensional device and mixed-mode simulations. It is shown that there exists parasitic pnp bipolar transistor action in this device leading to a sudden increase in DC substrate leakage if anode bias is getting high. Through transient simulations for a 2000 V PS-mode HBM ESD discharge event, it is shown that the dominant discharge path is the one formed by a parasitic pnpn thyristor and a parasitic npn bipolar transistor in series. Percentage ratios of the various current components regarding the anode current at its current peaking are provided. The mechanisms involved in ESD discharge inside the diode-string clamp utilizing triple-well technologies are explained in detail, which has never been done anywhere in the literature based on simulations or measurements.

关键词： ESD Protection Diode String Triple Well Device Simulation CMOS RF IC

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A Comparison Study of Diode-String ESD Clamps for CMOS Input Protection

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Circuits and Systems 2019年第2期10卷 21-36页

作者： jin young choi Department of Electronic & Electrical Engineering Hongik University Sejong Korea

Based on 2-D device simulations and mixed-mode transient simulations, DC and transient discharge characteristics of a usual diode string utilizing a standard CMOS process, and a diode string utilizing a triple-well CMOS process, which can serve as an essential VDD-VSS clamp device for CMOS input ESD protection were compared. Transient discharge characteristics including peak voltages developed across gates oxides of transistors in input buffers, lattice heating inside ESD protection devices, and ratios of discharge current components at its peak inside the diode-string clamp were compared. DC standby current levels added per each input pad structure, which are the critical parameters determining usefulness of the devices, were also compared. We showed that the diode-string devices in comparison can serve successfully as a VDD-VSS clamp device for ESD protection by virtue of the dominant pnpn thyristor-related conduction mechanisms. Optimization of design parameters including anode-cathode contact spacing in each diode in the string, device width of the diode string, and number of diodes in the diode string was performed to present transient discharge and DC characteristics of some recommendable design examples, which can serve as a guideline in designing diode-string clamp devices.

关键词： ESD Input Protection Diode String Clamp CMOS

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A Comparison Study of Input ESD Protection Schemes Utilizing NMOS, Thyristor, and Diode Devices

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Communications and Network 2010年第1期2卷 11-25页

作者： jin young choi 不详

For three fundamental input-protection schemes suitable for high-frequency CMOS ICs, which utilize protection devices such as NMOS transistors, thyristors, and diodes, we attempt an in-depth comparison on HBM ESD robustness in terms of lattice heating inside protection devices and peak voltages developed across gate oxides in input buffers, based on DC, mixed-mode transient, and AC analyses utilizing a 2-dimensional device simulator. For this purpose, we construct an equivalent circuit model of input HBM test environments for CMOS chips equipped with input ESD protection circuits, which allows mixed-mode transient simulations for various HBM test modes. By executing mixed-mode simulations including up to six active protection devices in a circuit, we attempt a detailed analysis on the problems, which can occur in real tests. In the procedure, we suggest to a recipe to ease the bipolar trigger in the protection devices and figure out that oxide failure in internal circuits is determined by the peak voltage developed in the later stage of discharge, which corresponds to the junction breakdown voltage of the NMOS structure residing in the protection devices. We explain strength and weakness of each protection scheme as an input ESD protection circuit for high-frequency ICs, and suggest valuable guidelines relating design of the protection devices and circuits.

关键词： ESD protection HBM NMOS thyristor diode mixed-mode

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An Analytical Approach for Fast Automatic Sizing of Narrow-Band RF CMOS LNAs with a Capacitive Load

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Circuits and Systems 2012年第2期3卷 317-324页

作者： jin young choi Electronic & Electrical Engineering Department Hongik University JochiwonSouth Korea

We introduce a fast automatic sizing algorithm for a single-ended narrow-band CMOS cascode LNA with a capacitive load based on an analytical approach without any optimization procedure. Analytical expressions for principle parameters are derived based on an ac equivalent circuit. Based on the analytical expressions and the power-constrained noise optimization criteria, the automatic sizing algorithm is developed. The algorithm is coded using Matlab, which is shown capable of providing a set of design variable values within seconds. One-time Spectre simulations assuming usage of a commercial 90 nm CMOS process are performed to confirm that the algorithm can provide the aimed first-cut design with a reasonable accuracy for the frequency ranging up to 5 GHz.

关键词： Automatic Synthesis Analytical Approach CMOS LNA Narrow Band Cascode

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A Thyristor-Only Input ESD Protection Scheme for CMOS RF ICs

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Circuits and Systems 2011年第3期2卷 170-182页

作者： jin young choi Choongkoo Park 不详

We propose an input protection scheme composed of thyristor devices only without using a clamp NMOS device in order to minimize the area consumed by a pad structure in CMOS RF ICs. For this purpose, we suggest low-voltage triggering thyristor protection device structures assuming usage of standard CMOS processes, and attempt an in-depth comparison study with a conventional thyristor protection scheme incorporating a clamp NMOS device. The comparison study mainly focuses on robustness against the HBM ESD in terms of peak voltages applied to gate oxides in an input buffer and lattice heating inside protection devices based on DC and mixed-mode transient analyses utilizing a 2-dimensional device simulator. We constructed an equivalent circuit for the input HBM test environment of the CMOS chip equipped with the input ESD protection devices. And by executing mixed-mode simulations including up to four protection devices and analyzing the results for five different test modes, we attempt a detailed analysis on the problems which can occur in real HBM tests. We figure out strength of the proposed thyristor-only protection scheme, and suggest guidelines relating the design of the protection devices and circuits.

关键词： ESD Protection HBM Thyristor Mixed-Mode Simulation RF ICs

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Mapping out the social experience of cancer patients with facial disfigurement

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Health 2010年第5期2卷 418-428页

作者： Alessandro Bonanno jin young choi 不详

This article contributes to the limited literature on the social consequences of cancer generated facial disfigurement by reporting the result of an exploratory analysis of interaction between facially disfigured cancer patients and strangers and acquaintances (secondary groups). Secondary groups are those in which membership occurs due to performance of formal and/or non-intimate roles. Interaction is studied as it takes place in different social settings. Indivi- duals who are affected by cancer of the head and neck region can now expect to survive for many years after the cancer is detected and later surgically removed. Because of surgery, these survivors live the rest of their lives with facial disfigurement and are stigmatized and socially excluded. It follows that a new and socially relevant situation has emerged: as medicine develops and allows more patients to survive, it forces them to spend significant portions of their lives dealing with the stigma associated with facial disfigurement. Research on social issues pertaining to facially disfigured cancer patients remains sparse. Limited knowledge has been produced on the “social context” within which interaction between the disfigured and relevant social groups takes place. To date most research has focused on the individual and his/her ability to adapt to the condition of facially disfigured. To address this scientific gap and document the manner through which the interaction process is socially created and evolves, interviews with fourteen facially disfigured cancer patients were carried out. These interviews were designed to reconstruct the interaction experiences of these individuals in different social contexts. Data were analyzed through the qualitative approach of grounded theory. Results indicate that patients can be divided into two groups: Occasionally Comfortable Patients and Always Comfortable Patients. Occasionally comfortable patients are individuals who experience different levels of comfort i

关键词： Facial Disfigurement Cancer Stigma Social Interaction

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