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Optimization of CZTSSe thin film solar cell performance using PbS back surface field layer

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Optoelectronics Letters 2025年

作者： WENJING LUO ZHIJIAN BAI yuming xue LUOXIN WANG YANHONG DING HONGLI DAI Tianjin Key Laboratory of Film Electronic & Communication Devices， School of Electronics Information Engineering， Tianjin University of Technology School of Materials Science and Engineering ，Jilin University

CZTSSe is an Earth-abundant， environmentally friendly， and low-cost material， with a current record power conversion efficiency of 14.9%， This result is well below the prediction of the Shockley-Queisser limit. To improve the performance of solar cells， a layer of PbS (BSF) was added to the CZTSSe， which was simulated using the SCAPS-1D software. The optimal photovoltaic performance of AZO/ZnO/CdS/CZTSSe/PbS/Mo was studied by changing the parameters of the CZTSSe absorption layer and PbS layer. Studies have shown that the efficiency can be increased to 20.86% after using PbS.

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Influence of band gap and different defects on the performance of Cu（In， Ga）Se2 solar cells

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Optoelectronics Letters 2025年

作者： LU Yahan xue yuming DAI Hongli WANG Luoxin LI Weiwei JI Licui Institute of New Energy Intelligence Equipment， School of Integrated Circuit Science and Engineering， Tianjin University of Technology

The SCAPS-1D simulator， a one-dimensional solar cell capacitance simulator is utilized for simulating CIGS solar cells. It has been observed that the performance of solar cells can be enhanced by uniformly adjusting the band gap value of the CIGS absorption layer. Upon doing so， the solar cell's conversion efficiency reaches 22.13% when the band gap of the CIGS absorption layer is 1.3eV. Subsequently， the influence of defect type and density on photoelectric properties is analyzed by using the improved absorption band gap. The findings indicate that to heighten the photovoltaic efficiency， it is imperative to minimize the defect concentration in the absorption layer， as high-density defects significantly impact the efficiency， and can even render the conversion efficiency to zero. This study underscores the pivotal influence of band gap adjustments and defect charge types on the photoelectric properties of thin film solar cells.

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Enhancing the performance of the absorber of Cu2ZnSn（S， Se）4 photovoltaic materials by doping Cd2+

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Optoelectronics Letters 2025年

作者： YANG Shuqi xue yuming DAI Hongli WANG Luoxin ZHANG Haiwei BAI Xin Institute of New Energy Intelligence Equipment， School of Integrated Circuit Science and Engineering， Tianjin University of Technology

Cationic doping is considered to be an effective way to improve the efficiency of Cu2ZnSn（S，Se）4（CZTSSe） photovoltaic materials. To improve the quality of the absorption layer of the crystal film， CZTSSe film was doped with some Cd to change the ratio of Cd and Zn in the precursor solution. XRD， Raman， SEM， UV-Vis spectroscopy， and other results showed that Cd successfully replaced Zn in the crystal lattice during post-selenization. The formation of harmful Zn-related defects was reduced， the grain size and crystallinity of the films were significantly increased， and the photoelectric properties of the films such as crystal quality and structural morphology were improved. As the Cd/（Cd+Zn） ratio increased from 0 to 0.35， the band gap of CZCTSSe decreased to 1.02eV. When Cd/（Cd+Zn）=0.25， the crystallinity and grain size reached the best value， and the film surface was smooth and dense， which inhibited the formation of the second phase on the surface of *** theoretical basis and experimental results showed that proper Cd doping can promote the growth of grain， so that compact CZCTSSe films with larger grain sizes and fewer holes could be prepared.

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Effect of ammonia concentration of complexing agent on CdxZn1-xS buffer layer by chemical bath deposition and performance of CIGS cell

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Optoelectronics Letters 2025年

作者： LU Yahan xue yuming DAI Hongli WANG Luoxin ZHOU Liwei TAN Zhiyuan Institute of New Energy Intelligence Equipment， School of Integrated Circuit Science and Engineering， Tianjin University of Technology

In this paper， CdxZn1-xS thin films were deposited on glass substrates by chemical bath deposition （CBD），and the effects of different concentrations of ammonia water on the morphology， structure and optical properties of the films were studied. CdxZn1-xS thin films have hexagonal crystal structure， the transmittance is above 75% in the visible range， and the optical band gap is between 2.6 eV and 2.9 eV. The influence of the experimental group of deposited thin films on the performance parameters of the CIGS battery was studied by simulation with SCAPS-1D software and the cell efficiency reached 22.42%. It is introduced that the buffer layer prepared in this experiment is feasible in CIGS solar cells.

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Improved model for defect detection in photovoltaic cells based on Yolov5

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Optoelectronics Letters 2025年

作者： BAI Xinfeng xue yuming DAI Hongli WANG Luoxin BAI Xin HU Xiaofeng Institute of New Energy Intelligence Equipment， School of Integrated Circuit Science and Engineering， Tianjin University of Technology

In order to meet the requirements of recognition speed and accuracy for complex photovoltaic (PV) cell defect detection tasks， this paper proposed an improvement strategy based on the Yolov5 network model. First， the model's ability to localize defects was enhanced by adding shallow feature inputs to strengthen the model's fusion of shallow feature information; second， the Squeeze-and-excitation (SE) attention mechanism was introduced to expand the receptive field and strengthen the dependency between feature channels; finally， a smoothing downsampling module was constructed to replace the convolutional sampling， which reduced the loss of information while retaining the important features. The experimental results show that the Yolov5 model based on this improved strategy achieved an average accuracy of 92.06% in the multiclassification defect detection task， and the average recognition speed reached 25.31 frames per second (FPS)， which took into account the requirements of performance and real-time performance， and can satisfy the needs of PV cell defect detection in industrial scenarios.

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The effects of selenization conditions on the microstructure and optoelectronic properties of CZTSSe absorber layers prepared by the sol-gel method

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Optoelectronics Letters 2025年

作者： BAI Xin xue yuming DAI Hongli WANG Luoxin BAI Xinfeng HU Xiaofeng Institute of New Energy Intelligence Equipment， School of Integrated Circuit Science and Engineering， Tianjin University of Technology

Cu2ZnSnSSe4（CZTSSe） thin film solar cells， with adjustable bandgap and rich elemental content， hold promise in next-gen photovoltaics. Crystalline quality is pivotal for efficient light absorption and carrier transport. During the post-selenization process， understanding crystal growth mechanisms， and improving layer quality are essential. We explored the effects of ramp rate and annealing temperature on CZTSSe films， using XRD， Raman， SEM， and UV-Vis. The optimal performance occurred at 25.25 ℃/min ramp rate and 530℃ annealing. This led to smoother surfaces， higher density， and larger grains. This condition produced a single-layer structure with large grains， no secondary phases， and a 1.14 eV bandgap， making it promising for photovoltaic applications. The study has highlighted the effect of selenization conditions on the characteristics of the CZTSSe absorber layer and has provided valuable information for developing CZTSSe thin film solar cells.

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Effects of ammonia concentration on morphology, composition and optical properties of ZnO_(1-x)S_(x) thin films of Cu(In, Ga)Se_(2) solar cells

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Optoelectronics Letters 2022年第4期18卷 215-221页

作者： WANG Lang xue yuming WANG Zhiyong GUO Qing School of Integrated Circuit Science and Engineering Tianjin University of TechnologyTianjin 300384China

ZnO_(1-x)S_(x) films were prepared by chemical bath deposition(CBD)on glass *** effects of ammonia concentration on the structure characteristics of ZnO_(1-x)S_(x) films were *** results of scanning electron microscope(SEM)show that the film has good density when the concentration of ammonia is 0.4 *** more S2-ions are involved in the reaction and less precipitates are generated,the film is relatively *** distribution of the film element shows that the growth rate of the film first accelerates and then slows down as the concentration of ammonia increases.X-ray diffraction(XRD)study shows that the diffraction peak is obvious when the ammonia concentration is 0.4 M,and the crystallinity of the film is ***(UV)spectrophotometer test results show that the ratio of S content(x)and optical band gap(E_(g))satisfies E_(g)(x)=3.3257x^(2)-2.7187x+*** S content can increase the optical band gap of the film,and increasing ammonia concentration can improve the absorbance of the film,but both have good *** the ammonia concentration of 0.4 M,the absorbance of the film is good in the wavelength range of 300—900 nm,the transmission rate reaches 80%,and the band gap is 3.75 e V,which is suitable for the buffer layer of solar cells.

关键词： ammonia film concentration

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Research on the properties of ZnO_(1-x)S_(x) thin films modified by sulfur doping for CIGS solar cells

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Optoelectronics Letters 2022年第11期18卷 678-682页

作者： SUN Hang xue yuming WANG Luoxin GUO Qing LI Penghai School of Integrated Circuit Science and Engineering Tianjin University of TechnologyTianjin 300384China

ZnO_(1-x)S_(x) thin films modified by sulfur doping were prepared on glass substrates by chemical bath deposition(CBD) for studying the effect of thiourea concentration on the thin film properties. The obtained ZnO_(1-x)S_(x) thin films were characterized by scanning electron microscopy(SEM), which shows the surfaces of ZnO_(1-x)S_(x) thin films deposited under the thiourea concentration of 0.14 M are more compact. X-ray diffraction(XRD) measurement shows that the ZnO_(1-x)S_(x) thin films with hexagonal crystal structure had strong diffraction peaks and better crystallinity. The optical transmittance of the ZnO_(1-x)S_(x) thin films with 0.14 M thiourea concentration is above 80% in the wavelength range of 300-900 nm. According to the measurement results from spectrophotometer, the ZnO_(1-x)S_(x) band gap energy value Eg varies nonlinearly with different S/(S+O) ratio x, and increases with the increase of x. There is a band gap value of 2.97 eV in the ZnO_(1-x)S_(x) thin films deposited under 0.14 M thiourea concentration. Therefore, the thin films have better structural, optical and electric properties, and are more suitable for the buffer layers of copper indium gallium selenide(CIGS) thin film solar cells.

关键词： properties doping thiourea

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Effect of preheating and annealing temperature on the microstructure and optoelectronic properties of CZTS films prepared by sol-gel method

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Optoelectronics Letters 2023年第7期19卷 410-415页

作者： HU Zhaoshuo xue yuming DAI Hongli WANG Luoxin ZHANG Jiuchao WANG Jiangchao Institute of New Energy Intelligence Equipment School of Integrated Circuit Science and EngineeringTianjin Universityof TechnologyTianjin 300384China

The effects of different preheating and annealing temperatures on the surface morphology,microstructure,and optical properties of Cu_(2)ZnSnS_(4)(CZTS) thin films are investigated by controlling the preheating and annealing *** prepared thin films were characterized using X-ray diffraction(XRD),Raman spectroscopy,scanning electron microscopy(SEM),and ultra-violet-visible(UV-Vis) spectroscopy *** and Raman spectroscopy showed that a Kesterite structure with a selective orientation along the(112) peak was generated,and the thin films produced at a preheating temperature of 300℃ and annealing temperature of 570℃ had fewer secondary phases,which was beneficial for improving the performance of the solar *** confirms that the crystallite size increases and then decreases as the temperature increases,and the largest and most uniform crystallite size with the smoothest surface is generated at the above preheating and annealing ***-Vis measurements show that the thin films generated at the above temperature have the lowest transmittance and the lowest optical band gap value of 1.46 e V,which is close to the optimal band gap value for solar cells and is suitable as an absorber layer material.

关键词： annealing microstructure films

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