检索结果-南通市图书馆

npj Computational Materials 2023年第1期9卷 1781-1786页

作者： Hao-Ran Zhu Bin Shao xu zuo College of Electronic Information and Optical Engineering Nankai UniversityTianjinChina Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology Nankai UniversityTianjinChina Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin Nankai UniversityTianjinChina Engineering Research Center of Thin Film Optoelectronics Technology Ministry of EducationNankai UniversityTianjinChina

On the basis of first-principles calculations,we investigate the electronic and magnetic properties of 1T phase chromium sulfide halide CrXY(X=O,S,Se;Y=Cl,Br,I)monolayers in CrCl_(2) structure with the P3m1 space *** for the CrOI monolayer,all CrXY monolayers are stable and ferromagnetic *** results show that the ferromagnetic coupling is dominated by the kinetic exchange between the empty e_(g)-orbital of Cr atoms and the p-orbital of anions under the three-fold rotational *** this context,the coupling strength allows for being greatly enhanced by turning the nature of Cr–X bonds,i.e.,increasing the covalent contribution of the bonds by minimizing the energy difference of the coupled *** we illustrate for the example of CrOY,the Curie temperature(T_(c))is nearly tripled by substituting O by S/Se ion,eventually reaching the highest Tc in CrSeI monolayer(334 K).The high stabilities and Curie temperature manifest these monolayer ferromagnetic materials feasible for synthesis and applicable to 2D spintronic devices.

关键词： ferromagnetic bonds coupling

Anomaly IoT Node Detection Based on Local Outlier Factor and Time Series

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Computers, Materials & Continua 2020年第8期64卷 1063-1073页

作者： Fang Wang Zhe Wei xu zuo School of Computer Science Civil Aviation Flight University of ChinaSichuan618307China Anzina PTY Ltd. SydneyNSW 2118Australia

The heterogeneous nodes in the Internet of Things(IoT)are relatively weak in the computing power and storage ***,traditional algorithms of network security are not suitable for the *** these nodes alternate between normal behavior and anomaly behavior,it is difficult to identify and isolate them by the network system in a short time,thus the data transmission accuracy and the integrity of the network function will be affected *** on the characteristics of IoT,a lightweight local outlier factor detection method is used for node *** order to further determine whether the nodes are an anomaly or not,the varying behavior of those nodes in terms of time is considered in this research,and a time series method is used to make the system respond to the randomness and selectiveness of anomaly behavior nodes effectively in a short period of *** results show that the proposed method can improve the accuracy of the data transmitted by the network and achieve better performance.

关键词： Local outlier factor time series Internet of Things anomaly node detection

First-principles investigations of proton generation inα-quartz

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Physics B 2018年第3期27卷 368-375页

作者： Yunliang Yue Yu Song xu zuo College of Electronic Information and Optical Engineering Nankal UniversityTianjin 300071China Microsystem and Terahertz Research Center China Academy of Engineering PhysicsChengdu 610200China Institute of Electronic Engineering China Academy of Engineering PhysicsMianyang 621999China Municipal Key Laboratory of Photo-electronic Thin Film Devices and Technology Nankai UniversityTianjin 300071China

Proton plays a key role in the interface-trap formation that is one of the primary reliability concerns, thus learning how it behaves is key to understand the radiation response of microelectronic devices. The first-principles calculations have been applied to explore the defects and their reactions associated with the proton release in a-quartz, the well-known crystalline isomer of amorphous silica. When a high concentration of molecular hydrogen （H2） is present, the proton generation can be enhanced by cracking the He molecules at the positively charged oxygen vacancies in dimer configuration. If the concentration of molecular hydrogen is low, the proton generation mainly depends on the proton dissociation of the doubly- hydrogenated defects. In particular, a fully passivated E~ center can dissociate to release a proton barrierlessly by structure relaxation once trapping a hole. This research provides a microscopic insight into the proton release in silicon dioxide, the critical step associated with the interface-trap formation under radiation in microelectronic devices.

关键词： first-principles calculation interface trap proton silicon dioxide

Design and Mechanical Performance Analysis of a New Wheel Propeller

在线全文

学校读者我要写书评

暂无评论

Chinese Journal of Mechanical Engineering 2011年第5期24卷 805-812页

作者： GAO Fudong PAN Cunyun xu Haijun zuo Xiaobo College oJ＇Mechatronic Engineering and Automation National University of Defense Technology Changsha 410073 China

Nowadays,how to enhance the maneuverability of autonomous underwater vehicles（AUVs） is an important issue in the domain of international navigation in that most AUVs just have a single function of underwater navigation or submarine movement,while the design of thrusters is the key of solving the *** multi-moving state autonomous underwater vehicle in this paper can achieve four functions,such as wheels,legs,thrust,and course control depend on the characteristics of spatial deflexion and continual circumgyratetion of the flexible transmission shaft.A new wheel propeller for the multi-moving state autonomous underwater vehicle is presented through analyzing the mechanical characteristics of the ducted propeller and the contracted and loaded tip（CLT） *** the computational fluid dynamics（CFD） method is used to simulate numerically different propellers open-water performance by using the Reynolds-averaged Navier-Stokes（RANS） equations and Reynolds stress model（RSM） based on sub-domains hybrid *** predicted thrust coefficients,torque coefficients and pressure of the propellers agree well with the experimental data of their open-water *** good consistency shows that the numerical method has good accuracy in the prediction of propeller open-water performance,which guides to design the wheel ***,for the sake of ensuring the security and stability of the AUV when it is moving on the ground,finite element method is used to simulate numerically the intensity and vibration *** proposed final wheel propeller D4-70（WPD4-70） has preferable open-water performance and intensity characteristics,which can realize the agile maneuverability of the multi-moving state autonomous underwater vehicle.

关键词： wheel propeller numerical calculation computational fluid dynamics finite element method

3D FEM SYSTEM FOR ANALYSIS OF NDUSTRIAL METAL FORMING PROCESSES

在线全文

学校读者我要写书评

暂无评论

中国有色金属学会会刊：英文版 1999年第2期9卷 39-44页

作者： zuo, xu Wei, Yuanping Chen, Jun Zeng, Lingshou Ruan, xueyu Shanghai Jiao Tong Univ Shanghai China

１ＩＮＴＲＯＤＵＣＴＩＯＮＤｕｅｔｏｔｈｅｌａｃｋｏｆｓｙｓｔｅｍａｔｉｃａｎａｌｙｓｉｓｔｏｏｌｓ，ｍｅｔａｌｆｏｒｍｉｎｇｄｅｓｉｇｎｉｓｈｉｇｈｌｙｂａｓｅｄｏｎｅｍｐｉｒｉｃａｌｉｄｅａ，ｌｏｔｓｏｆｔｉｍｅ... 详细信息

１ＩＮＴＲＯＤＵＣＴＩＯＮＤｕｅｔｏｔｈｅｌａｃｋｏｆｓｙｓｔｅｍａｔｉｃａｎａｌｙｓｉｓｔｏｏｌｓ，ｍｅｔａｌｆｏｒｍｉｎｇｄｅｓｉｇｎｉｓｈｉｇｈｌｙｂａｓｅｄｏｎｅｍｐｉｒｉｃａｌｉｄｅａ，ｌｏｔｓｏｆｔｉｍｅｃｏｎｓｕｍｉｎｇａｎｄｅｘｐｅｎ...

关键词： bulk formingrigidviscoplastic finite element methodremeshing

First-principles calculations of F-, Cl-, and N-related defects of amorphous SiO_(2) and their impacts on carrier trapping and proton release

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2021年第4期30卷 453-458页

作者： Xin Gao Yunliang Yue Yang Liu xu zuo College of Electronic Information and Optical Engineering Nankai UniversityTianjin 300071China School of Information Engineering Yangzhou UniversityYangzhou 225127China Microsystem and Terahertz Research Center China Academy of Engineering PhysicsChengdu 610200China Institute of Electronic Engineering China Academy of Engineering PhysicsMianyang 621999China Municipal Key Laboratory of Photo-electronic Thin Film Devices and Technology Nankai UniversityTianjin 300071China Engineering Research Center of Thin Film Optoelectronics Technology Ministry of EducationTianjin 300071China

The first-principles calculations based on density functional theory are performed to study F-,Cl-,and N-related defects of amorphous SiO_(2)(a-SiO_(2)) and their impacts on carrier trapping and proton *** possible geometric configurations of the impurity-related defects,the formation energies,the hole or electron trapping of the neutral defects,and the mechanisms to suppress proton diffusion by doping N are *** is demonstrated by the calculations that the impurity atoms can interact with the oxygen vacancies and result in impurity-related *** reactions can be utilized to saturate oxygen vacancies that will cause ionization damage to the semiconducting ***,the calculated formation energy indicates that the F-or Cl-related oxygen vacancy defect is a deep hole trap,which can trap holes and prevent them from diffusing to the a-SiO_(2)/Si ***,three N-related defects,namely N(2)o-H,N(2)o=O,and N(3)o-Vo,tend to act as shallow hole traps to facilitate hole transportation during device *** N(2)o and N(3)o configurations can be negatively charged as deep electron traps during the oxide charge buildup after ionization *** addition,the nudged elastic band(NEB) calculations show that four N-related defects,namely N(2)o,N(2)o-H,N(2)o=O,and N(3)o are capable of capturing protons and preventing them from diffusing to and de-passivating the *** research reveals the fundamental properties of the F-,Cl-,and N-related defects in amorphous silica and the details of the reactions of the carrier trapping and proton *** findings help to understand the microscopic mechanisms that alleviate ionization damage of semiconducting devices by doping a-SiO_(2).

关键词： first-principles calculation doping defect proton

HTS filter subsystem for future mobile communication system

在线全文

学校读者我要写书评

暂无评论

Science in China(Series F) 2008年第9期51卷 1384-1390页

作者： zuo Tao FANG Lan ZHAO XinJie zuo xu ZHOU TieGe YAN ShaoLin China Electronics Technology Group Corporation No. 16 Research Institute Hefei 230043 China Department of Electronics Nankai University Tianjin 300071 China

A high-temperature superconducting （HTS） filter subsystem consisting of a 10-pole HTS filter with group delay self-equalization, a cryogenic low noise amplifier （LNA）, and a cooling device is presented in this paper. The HTS filter has a 0.51% fractional bandwidth at 1955 MHz, simulated in Sonnet, and is fabricated using double-sided TI2Ba2CaCu208 films on 0.5 mm thick LaAIO3 substrate. Measured responses show that the minimum insertion loss of the filter is 0.16 dB, and the out-of-band rejection is better than 75 dB. The slope is 27 dB MHz^-1 at the low band edge and 22 dB MHz-1 at the upper band edge. The HTS filter subsystem has a gain of 19.3 dB and a noise figure （NF） of 0.8 dB. Furthermore, the phase distortion of HTS filters is considered, and an efficient design approach for self-equalized HTS filters is proposed.

关键词： HTS filter self-equalization subsystem group delay

Double interface modification promotes efficient Sb2Se3 solar cell by tailoring band alignment and light harvest

在线全文

学校读者我要写书评

暂无评论

Journal of Energy Chemistry 2022年第7期31卷 191-200,I0005页

作者： Weihuang Wang Zixiu Cao xu zuo Li Wu Jingshan Luo Yi Zhang Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology Nankai UniversityTianjin 300350China College of Electronic Information and Optical Engineering Nankai UniversityTianjin 300350China The MOE Key Laboratory of Weak-Light Nonlinear Photonics School of PhysicsNankai UniversityTianjin 300071China

The band alignment at the front interfaces is crucial for the performance of Sb_(2)Se_(3) solar cell with superstrate ***,a Sn O_(2)/Ti O_(2) thin film,demonstrated beneficial for carrier transport in Sb_(2)Se_(3) device by the first-principle calculation and experiment,is proposed to reduce the parasitic absorption caused by CdS and optimize the band alignment of Sb_(2)Se_(3) solar *** to the desirable transmittance of SnO_(2)/TiO_(2) layer,the Sb_(2)Se_(3) solar cell with SnO_(2)/TiO_(2)/(CdS-38 nm) electron transport layer performances better than (CdS-70 nm)/Sb_(2)Se_(3) solar *** optimized band alignment,the reduced interface defects and the decreased current leakage of Sb_(2)Se_(3) solar cell enable the short-circuit current density,fill factor,open-circuit voltage and efficiency of the Sb_(2)Se_(3) solar cell increase by 26.7%,112%,33.1%and 250%respectively when comparing with TiO_(2)/Sb_(2)Se_(3) solar cell without ***,an easily prepared Sn O_(2)/Ti O_(2)/CdS ETL is successfully applied on Sb_(2)Se_(3) solar cell by the first time and contributes to the best efficiency of 7.0%in this work,which is remarkable for Sb_(2)Se_(3) solar cells free of hole transporting materials and toxic CdCl_(2) *** work is expected to provide a valuable reference for future ETL design and band alignment for Sb_(2)Se_(3) solar cell and other optoelectronic devices.

关键词： Band alignment Parasitic absorption Sb_(2)Se_(3)solar cell SnO_(2)/TiO_(2) SnO_(2)/TiO_(2)/Cd S

First-principles calculations of the hole-induced depassivation of SiO2/Si interface defects

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2022年第5期31卷 575-581页

作者： Zhuo-Cheng Hong Pei Yao Yang Liu xu zuo College of Electronic Information and Optical Engineering Nankai UniversityTianjin 300350China Microsystem and Terahertz Research Center China Academy of Engineering PhysicsChengdu 610200China Institute of Electronic Engineering China Academy of Engineering PhysicsMianyang 621999China Municipal Key Laboratory of Photo-electronic Thin Film Devices and Technology Nankai UniversityTianjin 300350China Engineering Research Center of Thin Film Optoelectronics Technology Ministry of EducationNankai UniversityTianjin 300350China

The holes induced by ionizing radiation or carrier injection can depassivate saturated interface *** depassivation of these defects suggests that the deep levels associated with the defects are reactivated,affecting the performance of *** work simulates the depassivation reactions between holes and passivated amorphous-SiO_(2)/Si interface defects(HP_(b)+h→P_(b)+H^(+)).The climbing image nudged elastic band method is used to calculate the reaction curves and the *** addition,the atomic charges of the initial and final structures are analyzed by the Bader charge *** is shown that more than one hole is trapped by the defects,which is implied by the reduction in the total number of valence electrons on the active *** results indicate that the depassivation of the defects by the holes actually occurs in three *** the first step,a hole is captured by the passivated defect,resulting in the stretching of the Si-H *** the second step,the defect captures one more hole,which may contribute to the breaking of the Si-H *** H atom is released as a proton and the Si atom is three-coordinated and positively *** the third step,an electron is captured by the Si atom,and the Si atom becomes *** this step,a Pb-type defect is reactivated.

关键词： a-SiO_(2)/Si interface hole depassivation first-principles calculation

First-Principles Study of Doped Half-Metallic Spinels: Cu_(0.5)Zn0.5Cr_(2)S_(4),Cu_(0.5)Cd_(0.5)Cr_(2)S_(4), Li_(0.5)Zn_(0.5)Cr_(2)O_(4) and Li_(0.5)Zn_(0.5)Cr_(2)S_(4)

在线全文

学校读者我要写书评

暂无评论

Chinese Physics Letters 2012年第4期29卷 195-198页

作者： ZHOU Tie-Ge LIU Zhi-Qiang zuo xu College of Information Technical Science Nankai UniversityTianjin 300071

Electronic structure and magnetic properties of Cu_(0.5)Zn0.5Cr_(2)S_(4),Cu_(0.5)Cd_(0.5)Cr_(2)S_(4), Li_(0.5)Zn_(0.5)Cr_(2)O_(4) and Li_(0.5)Zn_(0.5)Cr_(2)S_(4) are investigated using the first-principles calculation based on the density functional *** +U exchange correlation is used in the calculation to correct the effective Coulomb repulsion energy of Cr underestimated by LSDA or *** calculation results reveal that half-metallic Cu_(0.5)Zn_(0.5)Cr_(2)S_(4) and Cu_(0.5)Cd_(0.5)Cr_(2)S_(4) can be achieved by doping CuCr_(2)S_(4) with Zn or Cd,though CuCr_(2)S_(4) is not ***-metallic LiCr_(2)O_(4) is experimentally unstable,but half-metallic Li_(0.5)Zn_(0.5) Cr_(2)O_(4) and Li_(0.5)Zn_(0.5) Cr_(2)S_(4) can be achieved by doping Li into experimentally stable ZnCr_(2)O_(4) and ZnCr_(2)S_(4),though ZnCr_(2)O_(4) and ZnCr_(2)S_(4) are not *** influence of +U on the electronic structure and half-metallicity of the doped systems is also presented.

关键词： theory metallic