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Low Gilbert damping in Bi/In-doped YIG thin films with giant Faraday effect

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Chinese Physics B 2024年第10期33卷 419-426页

作者： Jin Zhan Yi Wang Xianjie Wang hanxu Zhang Senyin Zhu Lingli Zhang Lingling Tao Yu Sui Wenqing He Caihua Wan xiufeng han V.I.Belotelov Bo Song School of Physics Harbin Institute of TechnologyHarbin 150001China Beijing National Laboratory for Condensed Matter Physics and Institute of PhysicsChinese Academy of SciencesBeijing 100190China Russian Quantum Center Moscow 119991Russia National Key Laboratory of Science and Technology on Advanced Composites in Special Environments Harbin Institute of TechnologyHarbin 150001China Zhengzhou Research Institute Harbin Institute of TechnologyZhengzhou 450046China Frontiers Science Center for Matter Behave in Space Environment Harbin Institute of TechnologyHarbin 150001China

Magnetic films with low Gilbert damping are crucial for magnonic devices,which provide a promising platform forrealizing ultralow-energy *** this study,low Gilbert damping and coercive field were observed in Bi/In-dopedyttrium iron garnet(BiIn:YIG)thin *** BiIn:YIG(444)films were deposited onto different substrates using pulsedlaser *** coercivity(<1 Oe)with saturation magnetization of 125.09 emu/cc was achieved along the in-planedirection of BiIn:YIG *** values of Gilbert damping and inhomogeneous broadening of ferromagnetic resonance inBiIn:YIG films were obtained to be as low as 4.05×10^(-4)and 5.62 Oe,*** addition to low damping,the giantFaraday rotation angles(up to 2.9×10^(4)deg/cm)were also observed in the BiIn:YIG *** modifying the magneticstructure and coupling effect between Bi^(3+)and Fe^(3+)of Bi:YIG,doped In^(3+)plays a key role on variation of the *** low damping and giant Faraday effect made the BiIn:YIG film an appealing candidate for magnonic andmagneto-optical devices.

关键词： magnonic device Gilbert damping Faraday effect

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多传感信息融合定位方法在导弹截获中的应用

指挥与控制学报 2024年第1期10卷 122-126页

作者：韩秀枫曾浩江南机电设计研究所贵阳550009

针对传统的雷达截获波束指向方法仅适用于匀速行进中作战的问题,为解决变速非直线行进中作战的截获需求,提出采用核自适应滤波算法将激光雷达和惯导融合定位的方法。所提方法与传统采用惯导速度补偿方法相比,具有定位精度高、鲁棒性好... 详细信息

针对传统的雷达截获波束指向方法仅适用于匀速行进中作战的问题,为解决变速非直线行进中作战的截获需求,提出采用核自适应滤波算法将激光雷达和惯导融合定位的方法。所提方法与传统采用惯导速度补偿方法相比,具有定位精度高、鲁棒性好等特点,可提高波束指向精度,缩短截获时间,提高武器系统作战效率,对复杂场景下雷达行进中截获导弹具有一定的研究价值。

关键词：导弹截获融合定位激光雷达核自适应滤波

Organic-ferromagnetic hetero-structures with spin transport properties and fundamental physical effects

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Science China(Physics,Mechanics & Astronomy) 2013年第1期56卷 151-165页

作者： LIU DongPing han xiufeng State Key Laboratory of Magnetism Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of Sciences

Organic spintronics refers to control spin dependent transport through organic *** the last two decades,extraordinary development has been achieved for organic-spintronics.A series of theoretical and experimental studies have been done to reveal the mechanisms of spin dependent transport *** theoretical analysis is based on the non-equilibrium Green's function formalism provides a mathematical framework for solving the transmission coefficients in the Landauer formula from atomistic first principles without any phenomenological *** this article,we provide a brief theoretical review on organic spintronics devices and device physics therein.

关键词： organic spintronics spin dependent transport magnetoresistance nonequilibrium green's function

Surface and internal magnetic domain structures of Fe-Ga alloy rods

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Science China(Technological Sciences) 2013年第1期56卷 36-39页

作者： han YuNan LI YongSheng han xiufeng YU DunBo School of Physics and Electronic Science Hunan University of Science and Technology National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of Sciences Grirem Advanced Materials Co. LtdGeneral Research Institute for Nonferrous Metals

The magnetic domain structures of the 100 oriented Fe 81 Ga 19 polycrystalline alloys with rapid quenching(RQ) and post-annealing(PA) thermal treatments are investigated by using magnetic force microscopy(MFM).The surfaces of the RQ alloy rods take on the dendritic domains after undergoing a standard mechanical *** after PA processing,the distinct domain structures are observed at different *** wide stripe-like domain patterns appear in the surface of those PA rods at 550°C while the ramous domains remain at 400°C annealing.X-ray diffraction patterns indicate that a thin iron layer is formed on the surface of the specimens annealed at higher *** soft magnetic iron layer,actually acting as a shield for the stray fields emerging from the internal magnetic structures underneath,brings about the presentation of the wide internal domains.

关键词： Galfenol polycrystal magnetic force microscopy magnetic domains thermal treatment magnetostriction

MgO(001) barrier based magnetic tunnel junctions and their device applications

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Science China(Physics,Mechanics & Astronomy) 2013年第1期56卷 29-60页

作者： han xiufeng ALI Syed Shahbaz LIANG ShiHeng State Key Laboratory of Magnetism Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of Sciences

Spintronics has received a great attention and significant interest within the past decades,and provided considerable and remarked applications in industry and electronic information *** spintronics,the MgO based magnetic tunnel junction(MTJ) is an important research advancement because of its physical properties and excellent performance,such as the high TMR ratio in MgO based *** present an overview of more than a decade development in MgO based *** review contains three main sections.(1) Research of several types of MgO based MTJs,including single-crystal MgO barrier based-MTJs,double barrier MTJs,MgO based MTJs with interlayer,novel electrode material MTJs based on MgO,novel barrier based MTJs,novel barrier MTJs based on MgO,and perpendicular MTJs.(2) Some typical physical effects in MgO based MTJs,which include six observed physical effects in MgO based MTJs,namely spin transfer torque(STT) effect,Coulomb blockade magnetoresistance(CBMR) effect,oscillatory magnetoresistance,quantum-well resonance tunneling effect,electric field assisted magnetization switching effect,and spincaloric effect.(3) In the last section,a brief introduction of some important device applications of MgO based MTJs,such as GMR & TMR read heads and magneto-sensitive sensors,both field and current switching MRAM,spin nano oscillators,and spin logic devices,have been provided.

关键词： magnetic tunnel junction (MTJ) tunneling magnetoresistance (TMR) MgO spin transfer torque (STT) Coulombblockade magnetoresistance (CBMR)

环境温度对TATB/RDX传爆药起爆及驱动性能的影响

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爆炸与冲击 2024年第1期44卷 37-46页

作者：郭刘伟翟召辉韩秀凤王伟何雨桂毓林中国工程物理研究院流体物理研究所四川绵阳621999 96901部队北京100091

为了获得环境温度对TATB/RDX传爆药起传爆性能及驱动性能的影响特性,采用激光多普勒测速技术及瞬态太赫兹波多普勒干涉测速技术,对TATB/RDX传爆药在隔层起爆条件下的起爆、传播及驱动性能开展实验研究,获取了-45~70℃温度环境中TATB/RD... 详细信息

为了获得环境温度对TATB/RDX传爆药起传爆性能及驱动性能的影响特性,采用激光多普勒测速技术及瞬态太赫兹波多普勒干涉测速技术,对TATB/RDX传爆药在隔层起爆条件下的起爆、传播及驱动性能开展实验研究,获取了-45~70℃温度环境中TATB/RDX传爆药的到爆轰距离、爆轰反应区时间宽度、爆轰传播速度及驱动飞片的飞行速度曲线。结果表明:TATB/RDX传爆药的到爆轰距离及爆轰反应区时间宽度随环境温度的降低均近乎呈线性增长趋势;爆轰传播速度随环境温度的降低而逐渐提高;驱动飞片的速度随环境温度的变化特性在飞片主体-层裂层融合前后存在明显不同。

关键词： TATB/RDX传爆药到爆轰距离爆轰传播飞片速度环境温度

Magnetic two-dimensional van derWaals materials for spintronic devices

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Chinese Physics B 2021年第11期30卷 12-21页

作者： Yu Zhang Hongjun Xu Jiafeng Feng Hao Wu Guoqiang Yu xiufeng han Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Songshan Lake Materials Laboratory Dongguan 523808China

Magnetic two-dimensional(2D)van derWaals(vdWs)materials and their heterostructures attract increasing attention in the spintronics community due to their various degrees of freedom such as spin,charge,and energy valley,which may stimulate potential applications in the field of low-power and high-speed spintronic devices in the *** review begins with introducing the long-range magnetic order in 2D vdWs materials and the recent progress of tunning their properties by electrostatic doping and ***,the proximity-effect,current-induced magnetization switching,and the related spintronic devices(such as magnetic tunnel junctions and spin valves)based on magnetic 2D vdWs materials are ***,the development trend of magnetic 2D vdWs materials is *** review provides comprehensive understandings for the development of novel spintronic applications based on magnetic 2D vdWs materials.

关键词： magnetic two-dimensional van der Waals materials spintronic devices

Magnon Valve Effect Between Two Magnetic Insulators

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Bulletin of the Chinese Academy of Sciences 2018年第1期32卷 43-44页

作者： han xiufeng Institute of Physics Chinese Academy of Sciences

Recently,a group headed by *** xiufeng at the State Key Laboratory of Magnetism under the Institute of Physics(IOP),Chinese Academy of Sciences reported in Physical Review Letters a novel type of magnon valve effect i... 详细信息

关键词：铁磁性绝缘体阀门量子国家重点实验室中国科学院 IOP 研究所

Nonvolatile Multifunctional Programmable Spin Logic Cell

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Bulletin of the Chinese Academy of Sciences 2017年第2期31卷 96-98页

作者： han xiufeng Institute of Ph-ysics Chinese Academy of Sciences

In this era of colossal data,more than 2 quintillion bytes of data were created every *** huge amount of data brings us not only unprecedented convenience and opportunities but also incomparably severe challenges in d... 详细信息

关键词：逻辑器件非易失性可编程多功能细胞自旋数据处理逻辑设备