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Silicon-processes-compatible contact engineering for twodimensional materials integrated circuits

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Nano Research 2023年第11期16卷 12471-12490页

作者： Li Gao zhangyi Chen Chao Chen xiankun zhang Zheng zhang Yue zhang Academy for Advanced Interdisciplinary Science and Technology Beijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing 100083China School of Materials Science and Engineering Peking UniversityBeijing 100871China Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of EducationUniversity of Science and Technology BeijingBeijing 100083China

Two-dimensional(2D)semiconductors,especially transition metal dichalcogenides(TMDCs),have been proven to be excellent channel materials for the next-generation integrated circuit(IC).However,the contact problem between 2D TMDCs and metal electrodes has always been one of the main factors restricting their *** this review,we summarized recent work on 2D TMDCs contact from the perspective of compatible integration with silicon processes and practical application requirements,including the contact performance evaluation indicators,special challenges encountered in 2D TMDCs,and recent optimization ***,we sorted out and highlighted the performance indicators of 2D TMDCs contacts,including contact resistance(RC),contact scaling,contact stability,and contact electrical/thermal *** challenges of 2D TMDCs and metal contact,such as severe Fermi level pinning,large RC,and difficult doping,are systematically ***,typical methods for optimizing 2D TMDCs RC,edge contact strategies for scaling contact lengths,and solutions for improving contact stability are *** on the current research and problems,the development direction of 2D TMDCs contacts that meet the silicon-based compatible process and application performance requirements is proposed.

关键词： two-dimensional(2D)semiconductors transition metal dichalcogenides field effect transistors contact engineering

Strain modulation on graphene/ZnO nanowire mixed- dimensional van der Waals heterostructure for high- performance photosensor

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Nano Research 2017年第10期10卷 3476-3485页

作者： Shuo Liu Qingliang Liao Zheng zhang xiankun zhang Shengnan Lu Lixin Zhou Mengyu Hong Zhuo Kang Yue zhang State Key Laboratory for Advanced Metals and Materials School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies University of Science and Technology Beijing Beijing 100083 China

The mixed-dimensional van der Waals （vdW） heterostructure is a promising building block for strained electronics and optoelectronics because it avoids the bond fracture and atomic reconstruction under strain. We propose a novel mixed-dimensional vdW heterostructure between two-dimensional graphene and a one-dimensional ZnO nanowire for high-performance photosensing. By utilizing the piezoelectric properties of ZnO, strain modulation was accomplished in the mixed-dimensional vdW heterostructure to optimize the device performance. By combining the ultrahigh electrons transfer speed in graphene and the extremely long life time of holes in ZnO, an outstanding responsivity of 1.87 ×10^5 A/W was achieved. Under a tensile strain of only 0.44% on the ZnO nanowire, the responsivity was enhanced by 26%. A competitive model was proposed, in which the performance enhancement is due to the efficient promotion of the injection of photogenerated electrons from the ZnO into the graphene caused by the strain-induced positive piezopotential. Our study provides a strain-engineering strategy for controlling the behavior of the photocarriers in the mixed-dimensional vdW heterostructure, which can be also applied to other similar systems in the future.

关键词： graphene ZnO nanowire vdW heterostructure strain modulation photosensor

Record-high saturation current in end-bond contacted monolayer MoS_(2) transistors

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Nano Research 2022年第1期15卷 475-481页

作者： Jiankun Xiao Zhuo Kang Baishan Liu xiankun zhang Junli Du Kuanglei Chen Huihui Yu Qingliang Liao Zheng zhang Yue zhang Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Advanced Energy Materials and TechnologiesUniversity of Science and Technology BeijingBeijing 100083China State Key Laboratory for Advanced Metals and Materials School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China

Monolayer two-dimensional(2D)semiconductors are emerging as top candidates for the channels of the future chip industry due to their atomically thin body and superior immunity to short channel ***,the low saturation current caused by the high contact resistance(R_(c))in monolayer MoS2 field-effect transistors(FETs)limits ultimate electrical performance at scaled contact lengths,which seriously hinders application of monolayer MoS_(2 )*** we present a scalable strategy with a clean end-bond contact scheme that leads to size-independent electrodes and ultralow contact resistance of 2.5 kΩ·μm to achieve record high performances of saturation current density of 730μA·μm^(-1)at 300 K and 960μA·μm^(-1)at 6 *** end-bond contact strategy in monolayer MoS2 FETs enables the great potential for atomically thin integrated circuitry.

关键词： monolayer MoS_(2)transistors end-bond contact low contact resistance high saturation current short channel

Universal transfer of full-class metal electrodes for barrier-free two-dimensional semiconductor contacts

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InfoMat 2024年第1期6卷 96-107页

作者： Mengyu Hong xiankun zhang Yu Geng Yunan Wang Xiaofu Wei Li Gao Huihui Yu Zhihong Cao Zheng zhang Yue zhang Academy for Advanced Interdisciplinary Science and Technology School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijingthe People's Republic of China Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of EducationUniversity of Science and Technology BeijingBeijingthe People's Republic of China

Metal–semiconductor contacts are crucial components in semiconductor *** two-dimensional transition-metal dichalcogenide semiconductors can sustain transistor scaling for next-generation integrated ***,their performance is often degraded by conventional metal deposition,which results in a high barrier due to chemical disorder and Fermi-level pinning(FLP).Although,transferring electrodes can address these issues,they are limited in achieving universal transfer of full-class metals due to strong adhesion between pre-deposited metals and ***,we propose a nanobelt-assisted transfer strategy that can avoid the adhesion limitation and enables the universal transfer of over 20 different types of *** contacts obey the Schottky–Mott rule and exhibit a FLP of S=*** the electron and hole contacts show record-low Schottky barriers of 4.2 and 11.2 meV,*** a demonstration,we construct a doping-free WSe_(2) inverter with these high-performance contacts,which exhibits a static power consumption of only 58 *** strategy provides a universal method of electrode preparation for building high-performance post-Moore electronic devices.

关键词： metal electrode transfer metal–semiconductor contacts Schottky barrier two-dimensional semiconductors

Single-Atom Vacancy Doping in Two-Dimensional Transition Metal Dichalcogenides

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Accounts of Materials Research 2021年第8期2卷 655-668页

作者： xiankun zhang Li Gao Huihui Yu Qingliang Liao Zhuo Kang Zheng zhang Yue zhang Academy for Advanced Interdisciplinary Science and Technology School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083People’s Republic of China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Advanced Energy Materials and TechnologiesUniversity of Science and Technology BeijingBeijing 100083People’s Republic of China Beijing Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Advanced Energy Materials and Technologies and State Key Laboratory for Advanced Metals and MaterialsSchool of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083People’s Republic of China

CONSPECTUS:Faced with the growing quests of higher-performance chips,developing new channel semiconductors immune to short channel effects has become a realistic option for continuing Moore’s *** outstanding gate electrostatic capacitance,stable chemical properties,and suitable bandgap,two-dimensional(2D)transition metal dichalcogenides(TMDCs)are considered as potential candidates for next-generation channel ***,the practical applications of 2D TMDCs are severely limited by stable,precise,and controllable doping technologies,due to their ultrathin body and dangling bond-free *** to three-dimensional semiconductors,donors in 2D semiconductors need larger ionization energy which can be attributed to the reduced screening of Coulomb interaction and the larger bandgap induced by quantum *** by the ultrathin body of 2D TMDCs and the strong film−substrate charge transfer,typical silicon-based substitutional doping technology encounters some headache difficulties in 2D TMDCs and hardly achieves high-concentration *** other two doping technologies also cannot take on this task either;local gate electrostatic doping cannot leave the aid of the external electric *** surface charge transfer doping of molecule adsorbents behaves unstably(e.g.,thermal desorption)or ineffectively modifies the original electronic ***,single-atom vacancies can effectively and precisely adjust the carrier concentration of 2D TMDCs and significantly enhance their ***,clarifying the work rules and function mechanism of single-atom vacancy doping in 2D TMDCs is beneficial in creating a brand-new optimization strategy of electrical properties and overcoming the technical obstacles of the“lab-to-fab”transition for their practical applications in high-performance electronics and *** this Account,we summarize the state-of-the-art progress in single-atom vacancy doping in 2D TMDCs and highlight t

关键词： doping precise electrostatic

Synergistic-engineered van der Waals photodiodes with high efficiency

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InfoMat 2022年第3期4卷 85-97页

作者： Baishan Liu xiankun zhang Junli Du Jiankun Xiao Huihui Yu Mengyu Hong Li Gao Yang Ou Zhuo Kang Qingliang Liao Zheng zhang Yue zhang Academy for Advanced Interdisciplinary Science and Technology School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijingPeople's Republic of China Advanced Innovation Center for Materials Genome Engineering Beijing Key Laboratory for Advanced Energy Materials and TechnologiesUniversity of Science and Technology BeijingBeijingPeople's Republic of China

Van der Waals(vdW)heterostructures based on two-dimensional transitionmetal dichalcogenides have provided unprecedented opportunities for photovoltaic detectors owing to their strong light-matter interaction and ultrafast interfacial charge *** continued advancement,insufficient control of photocarrier behaviors still limits the external quantum efficiency(EQE)and operation speed of such ***,we propose a synergistic strategy of contact-configuration design and thickness-modulation to construct high-performance vdW photodiodes based on the typical type II heterostructure(MoS2/WSe2).Through integrating three contact architectures into one device to exclude other factors,we solid the superiority of designed 1L-MoS2/WSe2/graphene heterostructures incorporating efficient photocarrier collection and gate *** with leveraging the layer-numberdependent properties of WSe2,we observe the critical thickness of WSe2(11 layers)for the highest EQE,which verifies the thickness-dependent competition between photocarrier generation,dissociation,and ***,we demonstrate the synergistic-engineered vdW heterostructure can trigger record-high EQE(61%)and manifest ultrafast photoresponse(4.1μs)at the atomically thin limit(8 nm).The proposed strategy enables architecture-design and thickness-engineering to unlock the potential to realize high-performance optoelectronic devices.

关键词： configuration-design photocarrier behaviors photovoltaic photodetectors thicknessmodulation van der Waals heterostructures

Microscopic pump-probe optical technique to characterize the defect of monolayer transition metal dichalcogenides

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Photonics Research 2019年第7期7卷 26-36页

作者： Ying Yu xiankun zhang zhangkai Zhou Zheng zhang Yanjun Bao Haofei Xu Limin Lin Yue zhang Xuehua Wang State Key Laboratory of Optoelectronic Materials and Technologies School of PhysicsSun Yat-sen University Guangzhou 510275China State Key Laboratory for Advanced Metals and Materials Beijing Municipal Key Laboratory for Advanced Energy Materials and Technologies School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China

Monolayer transition metal dichalcogenides(TMDs)are ideal materials for atomically thin,flexible *** and catalytic ***,their optoelectrical performance such as quantum yield and carrier mobility often shows below theoretical expectations due to the existence of *** monolayer TMD-based devices,finding a low-cost,time-efficient, and nondestructive technique to visualize the change of defect distribution in the space domain and the defect-induced change of the carrier's lifetime is vital for optimizing their optoelectronic ***, we propose a microscopic pump-probe technique to map the defect distribution of monolayer *** is found that there is a linear relationship between transient differential reflection intensity and defect density,suggesting that this technique not only realizes the visualization of the defect distribution but also achieves the quantitative estimation of defect ***,the carrier lifetime at each point can also be obtained by the technique. The technique used here provides a new route to characterize the defect of monolayer TMDs on the micro-zone, which will hopefiilly guide the fabrication of high-quality two-dimensional (2D) materials and the promotion of optoelectrical performance.

关键词： technique monolayer fabrication

Two-dimensional transition metal dichalcogenides for post-silicon electronics

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National Science Open 2023年第4期2卷 103-120页

作者： xiankun zhang Hang Zhao Xiaofu Wei Yanzhe zhang Zheng zhang Yue zhang Academy for Advanced Interdisciplinary Science and Technology Beijing Advanced Innovation Center for Materials Genome EngineeringUniversity of Science and Technology BeijingBeijing 100083China Beijing Key Laboratory for Advanced Energy Materials and Technologies School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing 100083China

Rapid advancements in information technology push the explosive growth in data volume,requiring greater computing-capability logic ***,conventional computing-capability improving technology,which mainly relies on increasing transistor number,encounters a significant challenge due to the weak field-effect characteristics of bulk siliconbased ***,the ultra-thin layered bodies of two-dimensional transition metal dichalcogenides(2D-TMDCs)materials enable excellent field-effect characteristics and multiple gate control ports,facilitating the integration of the functions of multiple transistors into ***,the computing-capability improvement of the transistor cell in logic circuits will greatly alleviate the challenge in transistor *** other words,one can only use a small number,or even just one,2DTMDCs-based transistors to conduct the sophisticated logic operations that have to be realized by using many traditional *** this review,from material selection,device structure optimization,and circuit architecture design,we discuss the developments,challenges,and prospects for 2D-TMDCs-based logic circuits.

关键词： logic circuits two-dimensional transition metal dichalcogenides computing capability post-silicon electronics transistor number

ON A CONJECTURE OF HARMONIOUS GRAPH

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Systems Science and Mathematical Sciences 1989年第4期2卷 325-328页

作者：柳柏濂张显坤 South China Normal University GuangzhouChina

Let the coronas Cn⊙K1 be the polygons with one additional end-point for *** Grace conjectured that Cn⊙K1 are harmonious for n *** this paper,aproof of his conjecture is given.

关键词： Harmonious graph Sequential graph labeling coronas conjecture