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Unconventional phase transition of phase-change-memory materials for optical data storage

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Chinese Physics B 2019年第10期28卷 73-82页

作者： Nian-Ke Chen xian-bin li State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University

Recent years, optically controlled phase-change memory draws intensive attention owing to some advanced applications including integrated all-optical nonvolatile memory, in-memory computing, and neuromorphic computing. The light-induced phase transition is the key for this technology. Traditional understanding on the role of light is the heating effect. Generally, the RESET operation of phase-change memory is believed to be a melt-quenching-amorphization process. However, some recent experimental and theoretical investigations have revealed that ultrafast laser can manipulate the structures of phase-change materials by non-thermal effects and induces unconventional phase transitions including solid-to-solid amorphization and order-to-order phase transitions. Compared with the conventional thermal amorphization,these transitions have potential superiors such as faster speed, better endurance, and low power consumption. This article summarizes some recent progress of experimental observations and theoretical analyses on these unconventional phase transitions. The discussions mainly focus on the physical mechanism at atomic scale to provide guidance to control the phase transitions for optical storage. Outlook on some possible applications of the non-thermal phase transition is also presented to develop new types of devices.

关键词： light-matter interaction phase-change memory non-thermal phase transition optical data storage

Single-crystalline hole-transporting layers for efficient and stable organic light-emitting devices

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light(Science & Applications) 2024年第7期13卷 1341-1353页

作者： Gao-Da Ye Ran Ding Su-Heng li Lei Ni Shu-Ting Dai Nian-Ke Chen Yue-Feng liu Runda Guo Lei Wang xian-bin li bin Xu Jing Feng State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin University2699 Qianjin Street130012 ChangchunChina. State Key Laboratory of Supermolecular Structures and Materials The Institute of Theoretical ChemistryJilin University2699 Qianjin Street130012 ChangchunChina. Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology430074 WuhanChina

Efficient charge-carrier injection and transport in organic light-emitting devices(OLEDs)are essential to simultaneously achieving their high efficiency and long-term ***,the charge-transporting layers(CTLs)deposited by various vapor or solution processes are usually in amorphous forms,and their low charge-carrier mobilities,defectinduced high trap densities and inhomogeneous thickness with rough surface morphologies have been obstacles towards high-performance ***,organic single-crystalline(SC)films were employed as the hole-transporting layers(HTLs)instead of the conventional amorphous films to fabricate highly efficient and stable *** highmobility and ultrasmooth morphology of the SC-HTLs facilitate superior interfacial characteristics of both HTL/electrode and HTL/emissive layer interfaces,resulting in a high Haacke’s figure of merit(FoM)of the ultrathin top electrode and low series-resistance joule-heat loss ratio of the ***,the thick and compact SC-HTL can function as a barrier layer against moisture and oxygen *** a result,the SC-OLEDs show much improved efficiency and stability compared to the OLEDs based on amorphous or polycrystalline HTLs,suggesting a new strategy to developing advanced OLEDs with high efficiency and high stability.

关键词： crystalline amorphous charge

Two-dimensional In_(2)Se_(3):A rising advanced material for ferroelectric data storage

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InfoMat 2022年第8期4卷 54-81页

作者： Yu-Ting Huang Nian-Ke Chen Zhen-Ze li Xue-Peng Wang Hong-Bo Sun Shengbai Zhang xian-bin li State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchunChina State Key Lab of Precision Measurement Technology and Instruments Department of Precision InstrumentTsinghua UniversityBeijingChina Department of Physics Applied Physicsand AstronomyRensselaer Polytechnic InstituteTroyNew YorkUSA

Ferroelectric memory is a promising candidate for next-generation nonvolatile memory owing to its outstanding performance such as low power consump-tion,fast speed,and high ***,the ferroelectricity of conven-tional ferroelectric materials will be eliminated by the depolarization field when the size drops to the nanometer *** a result,the miniaturization of ferroelectric devices was hindered,which makes ferroelectric memory unable to keep up with the development of integrated-circuit(IC)***,a two-dimensional(2D)In2Se3 was reported to maintain stable ferro-electricity at the ultrathin scale,which is expected to break through the bottle-neck of ***,devices based on 2D In2Se3,including the ferroelectric field-effect transistor,ferroelectric channel transistor,synaptic fer-roelectric semiconductor junction,and ferroelectric memristor were ***,a comprehensive understanding of the structures and the ferroelectric-switching mechanism of 2D In2Se3 is still ***,the atomic structures of different phases,the dynamic mechanism of ferroelectric switching,and the performance/functions of the latest devices of 2D In2Se3 are ***,the correlations among the structures,the properties,and the device performance are ***,several crucial problems or challenges and possible research directions are put *** hope that this review paper can provide timely knowledge and help for the research commu-nity to develop 2D In2Se3 based ferroelectric memory and computing technol-ogy for practical industrial applications.

关键词： 2D ferroelectric device 2D ferroelectric material 2D In2Se3 neuromorphic computing nonvolatile memory

Excitation to defect-bound band edge states in twodimensional semiconductors and its effect on carrier transport

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npj Computational Materials 2019年第1期5卷 1070-1075页

作者： Dan Wang Dong Han Damien West Nian-Ke Chen Sheng-Yi Xie Wei Quan Tian Vincent Meunier Shengbai Zhang xian-bin li State Key Laboratory on Integrated Optoelectronics College of Electronic Science and EngineeringJilin University130012 ChangchunChina State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of Sciences130033 ChangchunChina Department of Physics Applied Physics&AstronomyRensselaer Polytechnic InstituteTroyNY 12180USA College of Chemistry and Chemical Engineering Chongqing UniversityHuxi Campus401331 ChongqingChina

The ionization of dopants is a crucial process for electronics,yet it can be unexpectedly difficult in two-dimensional materials due to reduced screening and *** first-principles calculations,here we propose a dopant ionization process for twodimensional semiconductors where charge carriers are only excited to a set of defect-bound band edge states,rather than to the true band edge states,as is the case in *** defect-bound states have small enough ionization energies but large enough spatial *** a modest defect density,carriers can transport through band by such states.

关键词： defect semiconductors states

Time-dependent density-functional theory molecular-dynamics study on amorphization of Sc-Sb-Te alloy under optical excitation

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npj Computational Materials 2020年第1期6卷 1376-1380页

作者： Xue-Peng Wang xian-bin li Nian-Ke Chen Junhyeok Bang Ryky Nelson Christina Ertural Richard Dronskowski Hong-Bo Sun Shengbai Zhang State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin University130012 ChangchunChina Department of Physics Chungbuk National University28644 ChungbukRepublic of Korea Institute of Inorganic Chemistry RWTH Aachen University52056 AachenGermany Hoffmann Institute of Advanced Materials Shenzhen Polytechnic518055 ShenzhenChina State Key Lab of Precision Measurement Technology and Instruments Department of Precision Instrument Tsinghua Univerwsity100084 BeijingChina Department of Physics Applied Physicsand AstronomyRensselaer Polytechnic InstituteTroyNY 12180USA

Recently,all-optical memory and optical-computation properties of phase-change materials are receiving intensive *** writing/erasing information in these devices is usually achieved by laser pulses,the interaction between the laser and the phase-change materials becomes a key issue for such new *** this work,by a time-dependent density-functional theory molecular-dynamics study,the physics underlying the optical excitation induced amorphization of Sc-Sb-Te is revealed,which goes back to superatom-like Sc-centered structural *** motifs are found to be still robust under the excitation.

关键词： optical excitation theory

Ultrafast laser-induced decomposition for selective activation of GaAs

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light(Advanced Manufacturing) 2024年第2期5卷 87-94页

作者： Ke-Mi Xu Chao liu Lei Wang Feng-Chun Pang Xin-Jing Zhao xian-bin li Qi-Dai Chen Wei-Qian Zhao MIIT Key Laboratory of Complex-field Intelligent Exploration School of Optics and PhotonicsBeijing Institute of TechnologyBeijing100081China State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin University2699 Qianjin StreetChangchun 130012China

The manipulation of micro/nanostructures to customise their inherent material characteristics has garnered considerable *** this study,we present the selective activation of gallium arsenide(GaAs)via ultrafast laser-induced decomposition,which correlates with the emergence of ripples on the *** instigated a pronounced enrichment in the arsenic(As)concentration around the surface while inducing a depletion of gallium(Ga)at the structural *** simulations based on first principles exhibited a robust inclination towards the phase separation of GaAs,with the gasification of As-As pairs proving more facile than that of Ga-Ga pairs,particularly above the melting point of *** an illustrative application,a metal-semiconductor hybrid surface was confirmed,showing surface chemical bonding and surface-enhanced Raman scattering(SERS)through the reduction of silver ions on the laser-activated *** laser-induced selective activation holds promise for broader applications,including the controlled growth of Pd and the development of Au/Ag alloy-based platforms,and thereby opens innovative avenues for advancements in semiconductors,solar cell technologies,precision sensing,and detection methodologies.

关键词： Laser-induced activation Decomposition Laser-induced ripples Reduction SERS

Interaction between catechol-O-methyltransferase Val/Met polymorphism and cognitive reserve for negative symptoms in schizophrenia

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World Journal of Psychiatry 2024年第5期14卷 695-703页

作者： Wen-Peng Hou xiang-Qin Qin Wei-Wei Hou Yun-Yi Han Qi-Jing Bo Fang Dong Fu-Chun Zhou xian-bin li Chuan-Yue Wang Beijing Key Laboratory of Mental Disorders National Clinical Research Center for Mental Disorders&National Center for Mental DisordersBeijing Anding HospitalCapital Medical UniversityBeijing 100088China Advanced Innovation Center for Human Brain Protection Capital Medical UniversityBeijing 100069China

BACKGROUND Cognitive reserve(CR)and the catechol-O-methyltransferase(COMT)Val/Met polymorphism are reportedly linked to negative symptoms in ***,the regulatory effect of the COMT genotype on the relationship between CR and negative symptoms is still *** To investigate whether the relationship between CR and negative symptoms could be regulated by the COMT Val/Met *** In a cross-sectional study,54 clinically stable patients with schizophrenia underwent assessments for the COMT genotype,CR,and negative *** was estimated using scores in the information and similarities subtests of a short form of the Chinese version of the Wechsler Adult Intelligence *** COMT Met-carriers exhibited fewer negative symptoms than Val *** the total sample,significant negative correlations were found between negative symptoms and information,*** between information,similarities and negative symptoms were observed in Val homozygotes only,with information and similarities showing interaction effects with the COMT genotype in relation to negative symptoms(information,β=-0.282,95%CI:-0.552 to-0.011,P=0.042;similarities,β=-0.250,95%CI:-0.495 to-0.004,P=0.046).CONCLUSION This study provides initial evidence that the association between negative symptoms and CR is under the regulation of the COMT genotype in schizophrenia.

关键词： Catechol-O-methyltransferase Val/Met polymorphism Cognitive reserve Crystallized intelligence Negative symptoms Schizophrenia

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基于光电融合型相变单元的存内计算

Science Bulletin 2023年第21期68卷 2500-2502页

作者：王柏骞李贤斌孙洪波 State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012China State Key Laboratory of Precision Measurement Technology and Instruments Department of Precision InstrumentTsinghua UniversityBeijing 100084China

In-memory computing based on emerging non-volatile memory arrays holds a great promise to cope with the drastically increased demand for data ***-change material(PCM)is a leading candidate for in-memory computing,which utilizes the amorphous-crystalline phase transition and the associated changes in electrical resistance or optical transmission for data encoding[1].

关键词： computing processing. 融合型

喂养方式和口腔不良习惯对乳牙列牙合关系的影响

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北京大学学报（医学版） 2016年第6期48卷 1060-1066页

作者：陈小贤夏斌葛立宏袁峻伟北京大学口腔医学院·口腔医院门诊部口腔数字化医疗技术和材料国家工程实验室口腔数字医学北京市重点实验室北京100034 北京大学口腔医学院·口腔医院儿童口腔科口腔数字化医疗技术和材料国家工程实验室口腔数字医学北京市重点实验室北京100081 北京大学医院儿童口腔科北京100871

目的：调查北京地区3～6岁儿童母乳喂养和奶瓶喂养的持续时间以及口腔不良习惯与乳牙列牙合特征的关联。方法：采用横断面研究,检查北京市3所幼儿园734名儿童的牙合特征;并使用调查问卷收集儿童的喂养方式和口腔不良习惯资料。牙合特征... 详细信息

目的：调查北京地区3～6岁儿童母乳喂养和奶瓶喂养的持续时间以及口腔不良习惯与乳牙列牙合特征的关联。方法：采用横断面研究,检查北京市3所幼儿园734名儿童的牙合特征;并使用调查问卷收集儿童的喂养方式和口腔不良习惯资料。牙合特征由经标准化训练的儿童口腔科医师检查,检查内容包括：是否存在深覆牙合、开牙合、前牙反牙合、后牙反牙合、深覆盖、牙列拥挤、生理间隙、尖牙关系以及第二乳磨牙的末端平面类型。喂养方式和口腔不良习惯与牙合特征的关联用单因素分析和多因素回归分析进行统计。结果：母乳喂养持续时间未超过6个月（≤6个月）增加乳牙列后牙反牙合以及上颌牙弓无间隙的风险,增加使用安慰奶嘴习惯和咬物习惯的风险;奶瓶喂养大于18个月增加形成非近中型末端平面以及Ⅱ类尖牙关系的风险;安慰奶嘴习惯增加乳牙列深覆盖及无下颌发育间隙的风险;吮指习惯增加前牙开牙合的风险;吐舌习惯增加前牙开牙合及后牙反牙合的风险。结论：母乳喂养持续时间长于6个月可减少错牙合的风险以及形成口腔不良习惯的风险,口腔不良习惯与乳牙列错牙合的发生呈正相关。

关键词：母乳喂养口腔畸形习惯牙列,乳