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Progress on the antiferromagnetic topological insulator MnBi2Te4

National Science Review 2024年第2期11卷 33-49页

作者： Shuai Li Tianyu Liu chang Liu Yayu Wang Hai-Zhou Lu x.c.xie Department of Physics Harbin Institute of Technology Shenzhen Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and Technology(SUSTech) Quantum Science center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong) Shenzhen Key Laboratory of Quantum Science and Engineering International Quantum Academy Beijing Academy of Quantum Information Sciences Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-Nano Devices Department of Physics Renmin University of China State Key Laboratory of Low Dimensional Quantum Physics Department of PhysicsTsinghua University Frontier Science center for Quantum Information Hefei National Laboratory International center for Quantum Materials School of Physics Peking University Institute for Nanoelectronic Devices and Quantum computing Fudan University

Topological materials, which feature robust surface and/or edge states, have now been a research focus in condensed maTher physics. They represent a new class of materials exhibiting nontrivial topological phases,and provide a platform for exploring exotic transport phenomena, such as the quantum anomalous Hall effect and the quantum spin Hall effect. Recently, magnetic topological materials have attracted considerable interests due to the possibility to study the interplay between topological and magnetic *** particular, the quantum anomalous Hall and axion insulator phases can be realized in topological insulators with magnetic order. MnBi2Te4, as the first intrinsic antiferromagnetic topological insulator discovered, allows the examination of existing theoretical predictions; it has been extensively studied, and many new discoveries have been made. Here we review the progress made on MnBi2Te4from both experimental and theoretical aspects. The bulk crystal and magnetic structures are surveyed first, followed by a review of theoretical calculations and experimental probes on the band structure and surface states, and a discussion of various exotic phases that can be realized in MnBi2Te4. The properties of MnBi2Te4thin films and the corresponding transport studies are then reviewed, with an emphasis on the edge state transport. Possible future research directions in this field are also discussed.

关键词： MnBi2Te4 magnetic topological insulator antiferromagnetic quantum anomalous Hall effect axion insulator

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Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators

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National Science Review 2024年第2期11卷 15-23页

作者： Rui chen Hai-Peng Sun Mingqiang Gu chun-Bo Hua Qihang Liu Hai-Zhou Lu x.c.xie Shenzhen Institute for Quantum Science and Engineering and Department of Physics Southern University of Science and Technology(SUSTech) International Quantum Academy Institute for Theoretical Physics and Astrophysics University of Würzburg School of Electronic and Information Engineering Hubei University of Science and Technology Guangdong Provincial Key Laboratory of computational Science and Material Design Southern University of Science and Technology Shenzhen Key Laboratory of Quantum Science and Engineering International center for Quantum Materials School of PhysicsPeking University collaborative Innovation center of Quantum Matter cAS center for Excellence in Topological Quantum computation University of Chinese Academy of Sciences

The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers, which has been experimentally reported in the MnBi2Te4thin films under perpendicular electric fields. Here, we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature, as well as material design principles. Hence, it gives rise to zero Berry curvature in momentum space but non-zero layer-locked hidden Berry curvature in real space. We show that, compared to that of a trivial insulator, the layer Hall effect is significantly enhanced in antiferromagnetic topological insulators. Our universal picture provides a paradigm for revealing the hidden physics as a result of the interplay between the global and local symmetries, and can be generalized in various scenarios.

关键词： layerHall effect hidden Berry curvature antiferromagnetic insulator axion insulator, quantum transport

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Unconventional Hall effect induced by Berry curvature

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National Science Review 2020年第12期7卷 1879-1885页

作者： Jun Ge Da Ma Yanzhao Liu Huichao Wang Yanan Li Jiawei Luo Tianchuang Luo Ying xing Jiaqiang Yan David Mandrus Haiwen Liu x.c.xie Jian Wang International center for Quantum Materials School of PhysicsPeking University Department of Applied Physics The Hong Kong Polytechnic University Department of Physics Pennsylvania State UniversityUniversity Park Department of Materials Science and Engineering School of New Energy and MaterialsChina University of Petroleum Department of Materials Science and Engineering University of Tennessee Materials Science and Technology Division Oak Ridge National Laboratory center for Advanced Quantum Studies Department of PhysicsBeijing Normal University cAS center for Excellence in Topological Quantum computation University of Chinese Academy of Sciences Beijing Academy of Quantum Information Sciences collaborative Innovation center of Quantum Matter

Berry phase and Berry curvature play a key role in the development of topology in physics and do contribute to the transport properties in solid state *** this paper,we report the finding of novel nonzero Hall effect in topological material Zr Te5 flakes when the in-plane magnetic field is parallel and perpendicular to the ***,both symmetric and antisymmetric components with respect to magnetic field are detected in the in-plane Hall *** theoretical analysis suggests that the magnetotransport properties originate from the anomalous velocity induced by Berry curvature in a tilted Weyl *** work not only enriches the Hall family but also provides new insights into the Berry phase effect in topological materials.

关键词： Berry curvature topological material Hall effect tilted Weyl semimetal Berry phase effect

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Magnetoresistance Oscillations of Ultrathin Pb Bridges

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Nano Research 2009年第9期2卷 671-677页

作者： Jian Wang xucun Ma Shuaihua Ji Yun Qi Yingshuang Fu Aizi Jin Li Lu changzhi Gu x.c.xie Mingliang Tian Jinfeng Jia Qikun xue Institute of Physics Chinese Academy of SciencesBeijing 100190China The center for Nanoscale Science and Department of Physics The Pennsylvania State UniversityUniversity ParkPennsylvania 16802-6300USA Department of Physics Oklahoma State UniversityStillwaterOK 74078USA Department of Physics Tsinghua UniversityBeijing 100084China

Pb nanobridges with a thickness of less than 10 nm and a width of several hundred nm have been fabricated from single-crystalline Pb fi lms using low-temperature molecular beam epitaxy and focus ion beam microfabrication *** observed novel magnetoresistance oscillations below the superconducting transition temperature(Tc)of the *** oscillations which were not seen in the crystalline Pb fi lmsmay originate from the inhomogeneity of superconductivity induced by the applied magnetic fi elds on approaching the normal state,or the degradation of fi lm quality by thermal evolution.

关键词： Pb nanobridge magnetoresistance superconductivity molecular beam epitaxy scanning tunneling microscope focus ion beam

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Superconductor-Metal Quantum Transition at the EuO/KTaO3 Interface

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chinese Physics Letters 2020年第11期37卷 93-97页

作者： Yang Ma Jiasen Niu Wenyu xing Yunyan Yao Ranran cai Jirong Sun x.c.xie xi Lin Wei Han International center for Quantum Materials School of PhysicsPeking UniversityBeijing 100871China Beijing National Laboratory for condensed Matter Physics&Institute of Physics Chinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China cAS center for Excellence in Topological Quantum computation University of Chinese Academy of SciencesBeijing 100190China Beijing Academy of Quantum Information Sciences Beijing 100193China

We report the experimental investigation of the superconductor-metal quantum phase transition of the Eu O/KTa O3 *** the transition,a divergence of the dynamical critical exponent is observed,which supports the quantum Griffiths singularity in the Eu O/KTa O3 *** quantum Griffiths singularity could be attributed to large rare superconducting regions and quenched disorders at the *** results could pave the way for studying the exotic superconducting properties at the Eu O/KTa O3 interface.

关键词： singularity quantum Transition

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Realistic flat-band model based on degenerate p-orbitals in two-dimensional ionic materials

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Science Bulletin 2021年第8期66卷 765-770,M0003页

作者： Jiang Zeng Ming Lu Haiwen Liu Hua Jiang x.c.xie International center for Quantum Materials School of PhysicsPeking UniversityBeijing 100871China Beijing Academy of Quantum Information Sciences Beijing 100871China center for Advanced Quantum Studies Department of PhysicsBeijing Normal UniversityBeijing 100875China School of Physical Science and Technology Soochow UniversitySuzhou 215006China Beijing Academy of Quantum Information Sciences Beijing 100193China cAS center for Excellence in Topological Quantum computation University of Chinese Academy of SciencesBeijing 100871China

Though several theoretical models have been proposed to design electronic flat-bands, the definite experimental realization in two-dimensional atomic crystal is still lacking. Here we propose a novel and realistic flat-band model based on threefold degenerate p-orbitals in two-dimensional ionic materials. Our theoretical analysis and first-principles calculations show that the proposed flat-band can be realized in 1 T layered materials of alkali-metal chalogenides and metal-carbon group compounds. Some of the former are theoretically predicted to be stable as layered materials(e.g., K2 S), and some of the latter have been experimentally fabricated in previous works(e.g., Gd2 ccl2). More interestingly, the flat-band is partially filled in the heterostructure of a K2 S monolayer and graphene layers. The spin polarized nearly flatband can be realized in the ferromagnetic state of a Gd2 ccl2 monolayer, which has been fabricated in experiments. Our theoretical model together with the material predictions provide a realistic platform for the study of flat-bands and related exotic quantum phases.

关键词： Flat-band Degenerate orbitals Material realization 1T structure Partially filled

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Flat band localization due to self-localized orbital

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Frontiers of physics 2023年第6期18卷 203-209页

作者： Zhen Ma Wei-Jin chen Yuntian chen Jin-Hua Gao xcxie School of Physics and Wuhan National High Magnetic Field center Huazhong University of Science and TechnologyWuhan 430074China School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China International center for Quantum Materials School of PhysicsPeking UniversityBeijing 100871China collaborative Innovation center of Quantum Matter Beijing 100871China cAS center for Excellence in Topological Quantum computation University of Chinese Academy of SciencesBeijing 100190China

We discover a new wave localization mechanism in a periodic wave system,which can produce a novel type of flat band and is distinct from the known localization mechanisms,i.e.,Anderson localization and flat band *** first example we give is a designed electron waveguide(EWG)on 2DEG with special periodic confinement *** calculations show that,with proper confinement geometry,electrons can be completely localized in an open *** interpret this flat band localization(FBL)phenomenon by introducing the concept of self-localized ***,each unit cell of the waveguide is equivalent to an artificial atom,where the self-localized orbital is a special eigenstate with unique spatial *** self-localized orbitals form the flat bands in the *** self-localized orbital induced FBL is a general phenomenon of wave motion,which can arise in any wave systems with carefully engineered boundary *** then design a metallic waveguide(MWG)array to illustrate that similar FBL can be readily realized and observed with electromagnetic waves.

关键词： flat band localization self-localized orbital electron waveguide

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Gapped topological kink states and topological corner states in honeycomb lattice

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Science Bulletin 2020年第7期65卷 531-537,M0003页

作者： Yuting Yang Ziyuan Jia Yijia Wu Rui-chun xiao Zhi Hong Hang Hua Jiang x.c.xie School of Physical Science and Technology Soochow UniversitySuzhou 215006China International center for Quantum Materials Peking UniversityBeijing 100871China Institute for Advanced Study Soochow UniversitySuzhou 215006China Beijing Academy of Quantum Information Sciences Beijing 100193China cAS center for Excellence in Topological Quantum computation University of Chinese Academy of SciencesBeijing 100190China

Based on the tight-binding calculations on honeycomb lattice and photonic experimental visualization on artificial graphene(AG), we report the domain-wall-induced gapped topological kink states and topological corner states. In honeycomb lattice, domain walls(DWs) with gapless topological kink states could be induced either by sublattice symmetry breaking or by lattice deformation. We find that the coexistence of these two mechanisms will induce DWs with gapped topological kink states. Significantly, the intersection of these two types of DWs gives rise to topological corner state localized at the crossing *** the manipulation of the DWs, we show AG with honeycomb lattice structure not only a versatile platform supporting multiple topological corner modes in a controlled manner, but also possessing promising applications such as fabricating topological quantum dots composed of gapped topological kink states and topological corner states.

关键词： Topological corner states Topological kink states Topological quantum dot Honeycomb photonic crystal Domain-wall-induced topological states

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Topological flat bands in twisted trilayer graphene

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Science Bulletin 2021年第1期66卷 18-22,M0003页

作者： Zhen Ma Shuai Li Ya-Wen Zheng Meng-Meng xiao Hua Jiang Jin-Hua Gao x.c.xie School of Physics and Wuhan National High Magnetic Field center Huazhong University of Science and TechnologyWuhan 430074China School of Physical Science and Technology Soochow UniversitySuzhou 215006China International center for Quantum Materials School of PhysicsPeking UniversityBeijing 100871China collaborative Innovation center of Quantum Matter Beijing 100871China cAS center for Excellence in Topological Quantum computation University of Chinese Academy of SciencesBeijing 100190China

Twisted trilayer graphene(TLG)may be the simplest realistic system so far,which has flat bands with nontrivial ***,we give a comprehensive calculation about its band structures and the band topology,i.e.,valley chern number of the nearly flat bands,with the continuum *** realistic parameters,the magic angle of twisted TLG is about 1.12°,at which two nearly flat bands *** the twisted bilayer graphene,a small twist angle can induce a tiny gap at all the Dirac points,which can be enlarged further by a perpendicular electric *** valley chern numbers of the two nearly flat bands in the twisted TLG depends on the twist angleθand the perpendicular electric field E⊥.considering its topological flat bands,the twisted TLG should be an ideal experimental platform to study the strongly correlated physics in topologically nontrivial flat band ***,due to its reduced symmetry,the correlated states in twisted TLG should be quite different from that in twisted bilayer graphene and twisted double bilayer graphene.

关键词： Twisted trilayer graphene Moire heterostructure Valley chern number Topological flat bands

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Weak Field Phase Diagram for The Transition from Integer Quantum Hall State to Insulator

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电子显微学报 1997年第4期 117-118页

作者： D.Z.Liu 1\ x.c.xie 2 (1.James Franck Institute,University of chicago,chicago,IL 60637) (2.Department of Physics,Oklahoma State University,Stillwater,OK 74078)

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关键词： Hall Quantum State to Integer Diagram Field

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