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Screening and identification of salt tolerance soybean varieties and germplasms

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Oil Crop Science 2024年第3期9卷 204-210页

作者： Chen L. Peng L. Ouyang W. Yao H. Ye Y. Shan z. Cao D. Chen S. Yang z. huang Y. Han B. Sha A. z.ou x. Chen H. Key Laboratory of Biology and Genetic Improvement of Oil Crops Ministry of Agriculture and Rural Affairs Oil Crops Research Institute of Chinese Academy of Agricultural Sciences Wuhan 430062 China College of Agriculture Yangtze University Jingzhou 434000 China

Soil saliniz.tion is a globally prevalent abiotic environmental stress. The imbalance of ions caused by high concentrations of sodium chloride results in a 40% reduction in soybean yield. Soybean, as an important crop for soil quality improvement, necessitates the identification of salt-tolerant varieties and germplasms to effectively utiliz. and enhance saline-alkali land. In this study, we assessed the salt tolerance of 435 soybean varieties and germplasms during the seedling stage. Among them, Qihuang34, You2104, Hongz.udou, Pamanheidou, and Osage ex.ibited grade 1 salt tolerance rates surpassing other tested materials. Furthermore, Hongz.udou and Qihuang34 demonstrated higher salt tolerance during germination and emergence stages based on their elevated rates of emergence, salt tolerance index. chlorophyll content, and shoot fresh weights. Overall findings provide valuable resources for molecular breeding efforts aimed at developing salt-tolerant soybean varieties suitable for cultivation in saline-alkali soils. © 2024 the Oil Crop Research Institute, Chinese Academy of Agriculture Sciences

关键词： Germination and emergence stage Germplasms Salt tolerance Seedling stage Soybean Varieties

Measurement of the integrated Luminosities of cross-section scan data samples around theψ(3770)mass region

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Chinese Physics C 2018年第6期42卷 1-8页

作者： M. Ablikim M. N. Achasov S. Ahmed M. Albrecht M. Alekseev A. Amoroso F. F. An Q. An Y. Bai O. Bakina R. Baldini Ferroli Y. Ban K. Begz.uren D. W. Bennett J. V. Bennett N. Berger M. Bertani D. Bettoni F. Bianchi E. Boger I. Boyko R. A. Briere H. Cai x. Cai O. Cakir A. Calcaterra G. F. Cao S. A. Cetin J. Chai J. F. Chang W. L. Chang G. Chelkov G. Chen H. S. Chen J. C. Chen M. L. Chen P. L. Chen S. J. Chen x. R. Chen Y. B. Chen x. K. Chu G. Cibinetto F. Cossio H. a. Dai, J. F. Dai A. Dbeyssi D. Dedovich z. Y. Deng A. Denig I. Denysenko M. Destefanis F. De Mori Y. Ding C. Dong J. Dong L. Y. Dong M. Y. Dong z. L. Dou S. x. Du P. F. nuan J. Fang S. S. Fang Y. Fang R. Farinelli L. Fava S. Fegan F. Feldbauer G. Felici C. Q. Feng E. Fioravanti M. Fritsch C. D. Fu Q. Gao x. L. Gao Y. Gao, Y. G. Gao z. Gao B. Garillon I. Garz.a A. Gilman K. Goetz.n L. Gong W. x. Gong W. Gradl M. Greco L. M. Gu M. H. Gu Y. T. Gu A. q. Guo L. B. Guo R. P. Guo Y. F. Guo A. Guskov z. Haddadi S. Han x. Q. Hao F. A. Harris z. L. He x. O. He F. H. Heinsius T. Held Y. K. Heng T. Holtmann z. L. Hou H. M. Hu J. F. gu T. Hu Y. Hu G. S. huang J. S. huang x. T. huang x. z. huang z. L. guang T. Hussain W. Ikegami Andersson M Irshad Q. Ji Q. P. Ji x. B. Ji x. L. Ji x. S. Jiang x. Y. Jiang J. B. Jiao z. Jiao D. P. Jin S. Jin Y. Jin T. Johansson A. Julin N. Kalantar-Nayestanaki x. S. Kang M. Kavatsyuk B. C. Ke T. Khan A. Khoukaz.P. Kiese R. Kliemt L. Koch O. B. Kolcu B. Kopf M. Kornicer M. Kuemmel M. Kuessner A. Kupsc M. Kurth W. Kiihn J. S. Lange M. Lara P. Larin L. Lavez.i S. Leiber H. Leithofi C. Li Cheng Li D. M. Li F. Li F. Y. Li G. Li H. B. Li H. J. Li J. C. Li J. W. Li K. J. Li Kang Li Ke Li Lei Li P. L. Li P. R. Li Q. Y. Li T. Li W. D. Li W. G. Li x. L. Li x. N. Li x. Q. Li z. B. Li H. Liang Y. F. Liang Y. T. Liang G. R. Liao L. z. Liao J. Libby C. x. Lin D. x. Lin S. Liu B. J. Liu C. x. Liu D. Liu D. Y. Liu F. H. Liu Fang Liu Feng Liu H. B. Liu H. L Liu H. M. Liu Huanhuan Liu Huihui Liu J. B. Liu J. Y. Liu K. Liu K. Y. Liu Ke Liu L. D. Liu Q. Liu S B. Y. Zhang144 C. C. Zhang1D. H. Zhang1 H. H. Zhang45H. Y. Zhang144 J. Zhang151 J. L. Zhang65 J. Q. Zhang4 J. W. Zhang1 J. Y. Zhang1 J. Z. Zhang151 K. Zhang151 L. Zhang46 S. F. Zhang35 T. J. Zhang3975 X. Y. Zhang38 Y. Zhang4457 Y. H. Zhang144 Y. T. Zhang4557 Yang Zhang1 Yao Zhang1 Yu Zhang51 Z. H. Zhang6 Z. P. Zhan57Z. Y. Zhang64 G. Zhao1J. W. Zhao144 J. Y. Zhao151 J. Z. Zhao144 Lei Zhao4457 Ling Zhao1 M. G. Zhao35 Q. Zhao1 S. J. Zhao67 T. C. Zhao1 Y. B. Zhao144 Z. G. Zhao4457 A. Zhemehugov2869 B. Zheng58J. P. Zheng144 W. J. Zheng38 Y. H. Zheng51B. Zhong33 L. Zhou144 Q. Zhou151 X. Zhou64 X. K. Zhou4457 X. R. Zhou4457 X. Y. Zhou1 A. N. Zhu151 J. Zhu35 J. Zhu45 K. Zhu1 K. J. Zhu1 S. Zhu1 S. H. Zhu56 X. L. Zhu46 Y. C. Zhu4457 Y. S. Zhu151 Z. A. Zhu151 J. Zhuang144B. S. Zou1 J. H. Zou1 （ 1 Institute of High Energy Physics Beijing 100049 China Beihang University Beijing 100191 China Beijing Institute of Petrochemical Technology Beijing 102617 China Bochum Ruhr-University D-44780 Bochum Germany Carnegie Mellon University Pittsburgh Pennsylvania 15213 USA Central China Normal University Wuhan 430079 China China Center of Advanced Science and Technology Beijing 100190 China COMSATS Institute of Information Technology Lahore Defence Road Off Raiwind Road 54000 Lahore Pakistan G.I. Budker Institute of Nuclear Physics SB RAS （BINP） Novosibirsk 630090 Russia GSI Helmholtz.entre for Heavy Ion Research GmbH D-64291 Darmstadt Germany Guangx. Normal University Guilin 541004 China Guangx. University Nanning 530004 China Hangz.ou Normal University Hangzhou 310036 China Helmholtz.Institute Mainz JohannwJoachim-Becher-Weg 45 D-55099 Mainz Germany Henan Normal University Xinxiang 453007 China Henan University of Science and Technology Luoyang 471003 China huangshan College Huangshan 245000 China Hunan Normal University Changsha 410081 China Hunan University Changsha 410082 China Indian Institute of Tec

To investigate the nature of the Ψ（3770） resonance and to measure the cross section for e^＋e^-→DD, a cross-section scan data sample, distributed among 41 center-of-mass energy points from 3.73 to 3.89 GeV, was taken with the BESIII detector operated at the BEPCII collider in the year 2010. By analyz.ng the large angle Bhabha scattering events, we measure the integrated luminosity of the data sample at each center-of-mass energy point. The total integrated luminosity of the data sample is 76.16±0.04±0.61 pb^-1, where the first uncertainty is statistical and the second systematic.

关键词： Bhabha scattering events integrated luminosity BESⅢ

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Granger causal representation learning for groups of time series

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Science China(Information Sciences) 2024年第5期67卷 56-68页

作者： Ruichu CAI Yunjin WU x.aokai huang Wei CHEN Tom z.J.FU z.ifeng HAO School of Computer Science Guangdong University of Technology Peng Cheng Laboratory College of Science Shantou University

Discovering causality from multivariate time series is an important but challenging *** ex.sting methods focus on estimating the Granger causal structures among multivariate time series,while ignoring the prior knowledge of these time series, e.g., the group of the time series. Focusing on discovering the Granger causal structures among groups of time series, we propose a Granger causal representation learning method to solve this problem. First, we use the multiset canonical correlation analysis method to learn the Granger causal representation of each group of time series. Then, we model the Granger causal relationships among the learned Granger causal representations using a recurrent neural network with temporal information. Finally, we formulate the above two stages into one unified optimiz.tion problem, which is efficiently solved using the augmented Lagrangian method. We conduct ex.ensive ex.eriments on synthetic and real-world datasets to validate the correctness and effectiveness of the proposed method.

关键词： Granger causal discovery Granger causal representation learning time series data recurrent neural network multiset canonical correlation analysis

Seismogenic model of the 2023 MW5.5 Pingyuan earthquake in North China Plain and its tectonic implications

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Earthquake Science 2024年第6期37卷 499-513页

作者： Wang S. Han L. x.e J. Fan L. huang x. Bi J. Yang H. Fang L. Institute of Geophysics China Earthquake Administration Beijing 10081 China Tianjin Earthquake Agency Tianjin 300201 China Earth System Science Programme The Chinese University of Hong Kong Hong Kong Shatin 999077 China Beijing Baijiatuan Earth Science National Observation and Research Station Beijing 100095 China

The 6 August 2023 MW5.5 Pingyuan earthquake is the largest earthquake in the central North China Plain (NCP) over the past two decades. Due to the thick sedimentary cover, no corresponding active faults have been reported yet in the epicenter area. Thus, this earthquake presents a unique opportunity to delve into the buried active faults beneath the NCP. By integrating strong ground motion records, high-precision aftershock sequence relocation, and focal mechanism solutions, we gain insights into the seismotectonics of the Pingyuan earthquake. The aftershocks are clustered at depths ranging from 15 to 20 km and delineate a NE-SW trend, consistent with the distribution of ground motion records. A NE-SW nodal plane (226°) of the focal mechanism solutions is also derived from regional waveform inversion, suggesting that the mainshock was dominated by strike-slip motion with minor normal faulting component. Integrating regional geological data, we propose that an unrecogniz.d fault between the NE-SW trending Gaotang and Lingx.an-Yangx.n faults is the seismogenic fault of this event. Based on the S-wave velocity structure beneath the NCP, this fault probably ex.ends into the lower crust with a high angle. Considering the tectonic regime and stress state, we speculate that the interplay of shear strain between the Amurian and South China blocks and the hot upwelling magma from the subducted paleo Pacific flat slab significantly contributed to the generation of the Pingyuan earthquake. © 2024 The Authors

关键词： aftershock relocation focal mechanism North China Plain Pingyuan earthquake S-wave velocity structure

Transient Characteristics and Accommodative Current Limiting Strategy for Bidirectional Interlinking Converters in Hybrid AC/DC Microgrids

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CSEE Journal of Power and Energy Systems 2024年第4期10卷 1575-1588页

作者： x.a Shen z.ikang Shuai Wen huang Chao Shen Yang Shen z.John Shen College of Electrical and Information Engineering Hunan UniversityChangsha 410082China Department of Electrical and Computer Engineering Illinois Institute of TechnologyChicagoIL 60616 USA

Bidirectional interlinking converter(BIC)is the core equipment in a hybrid AC/DC microgrid connected between AC and DC ***,the variety of control modes and flex.ble bidirectional power flow complicate the influence of AC faults on BIC itself and on DC sub-grid,which potentially threaten both converter safety and system *** study first investigates AC fault influence on the BIC and DC bus voltage under different BIC control modes and different pre-fault operation states,by developing a mathematical model and equivalent sequence ***,based on the analysis results,a general accommodative current limiting strategy is proposed for BIC without limitations to specific mode or operation *** amplitude is predicted and constrained according to the critical requirements to protect the BIC and relieving the AC fault influence on the DC bus *** with conventional methods,potential current limit failure and distortions under asymmetric faults can also be ***,ex.eriments verify feasibility of the proposed method.

关键词： Bidirectional interlinking converter current limiting fault characteristic hybrid AC/DC microgrid variation/oscillation of DC bus voltage

Construction of 2D/2D Ti_(3)C_(2)T_(x.Mx.ne/CdS heterojunction with photothermal effect for efficient photocatalytic hydrogen production

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Journal of Materials Science & Technology 2024年第4期171卷 1-9页

作者： T.Y.huang z.Yang S.Y.Yang z.H.Dai Y.J.Liu J.H.Liao G.Y.z.ong z.J.x.e Y.P.Fang S.S.z.ang Key Laboratory for Biobased Materials and Energy of Ministry of Education Guangdong Laboratory for Lingnan Modern AgricultureCollege of Materials and EnergySouth China Agricultural UniversityGuangzhou 510643China School of Physics and Optoelectronics South China University of TechnologyGuangzhou 510640China School of Chemical Engineering and Energy Technology Guangdong Provincial Key Laboratory of Distributed Energy SystemsDongguan University of TechnologyDongguan 523808China

The insensitivity of semiconductors to visible and infrared light is a key constraint on the utiliz.tion of light energy in photocatalytic *** photocatalysts with full-spectrum absorption through surface engineering is an effective approach to fully harnessing light energy in semiconductor ***,a novel stable Ti_(3)C_(2)T_(x.Mx.ne/CdS heterojunction catalyst is obtained by in-situ epitax.al growth of two-dimensional(2D)CdS nanosheets on 2D Mx.ne interface via a solvothermal *** ex.eptional light absorption properties of Mx.ne confer outstanding full-spectrum driven photocat-alytic hydrogen evolution capability upon the heterogeneous *** unique 2D/2D structure effectively mitigated the recombination of photogenerated carriers,enhancing the photocatalytic performance of the ***,the composite catalyst ex.ibits a significantly higher surface temperature of 80.4℃under visible light irradiation at an intensity of 0.1 W/cm^(2),which is 1.84 times higher than that of *** irradiation of visible and near infrared light,the composite catalyst with photothermal ef-fect demonstrates a remarkable hydrogen evolution rate of 65.4 mmol g^(-1)h^(-1),which is 7.2 times higher than that of CdS *** study introduces a novel approach for constructing full-spectrum absorption catalysts and ex.ands the application of the photothermal effect in photocatalytic hydrogen evolution research.

关键词： Two-dimensional structure Heterostructure Photothermal effect Photocatalyst Hydrogen evolution

Reply to “Beyond microbial carbon use efficiency”

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National Science Review 2024年第4期11卷 35-37页

作者： Feng Tao Johannes Lehmann Ying-Ping Wang Lifen Jiang Bernhard Ahrens Kostiantyn Viatkin Stefano Manz.ni Benjamin z.Houlton Yuanyuan huang x.aomeng huang Yiqi Luo Department of Ecology and Evolutionary Biology Cornell University Soil and Crop Sciences Section School of Integrative Plant ScienceCornell University CSIRO Environment Max.Planck Institute for Biogeochemistry Department of Physical Geography and Bolin Centre for Climate Research Stockholm University Department of Global Development Cornell University Key Laboratory of Ecosystem Network Observation and Modeling Institute of Geographic Sciences and Natural Resources Research Chinese Academy of Sciences Department of Earth System Science Ministry of Education Key Laboratory for Earth System Modelling Institute for Global Change Studies Tsinghua University

In their commentary, x.ao et al.[1]cautioned that the conclusions on the critical role of microbial carbon use efficiency (CUE) in global soil organic carbon (SOC) storage in the paper by Tao et al.[2] might be too *** claimed that Tao et al.’s study lacked mechanistic consideration of SOC formation and ex.luded important data *** et al. brought up important points,which can be largely reconciled with our findings by understanding the differences in ex.ressing processes in empirical studies and in models.

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Post-layout simulation driven analog circuit siz.ng

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Science China(Information Sciences) 2024年第4期67卷 289-300页

作者： x.aohan GAO Haoyi z.ANG Siyuan YE Mingjie LIU David z.PAN Linx.ao SHEN Runsheng WANG Yibo LIN Ru huang School of Integrated Circuits Peking University School of Computer Science Peking University Department of Electrical and Computer Engineering University of Texas at Austin Institute of Electronic Design Automation Peking University

Post-layout simulation provides accurate guidance for analog circuit design, but post-layout performance is hard to be directly optimiz.d at early design stages. Prior work on analog circuit siz.ng often utiliz.s pre-layout simulation results as the optimiz.tion objective. In this work, we propose a post-layoutsimulation-driven(post-simulation-driven for short) analog circuit siz.ng framework that directly optimiz.s the post-layout simulation performance. The framework integrates automated layout generation into the optimiz.tion loop of transistor siz.ng and leverages a coupled Bayesian optimiz.tion algorithm to search for the best post-simulation performance. Ex.erimental results demonstrate that our framework can achieve over 20% better post-layout performance in competitive time than manual design and the method that only considers pre-layout optimiz.tion.

关键词： analog EDA transistor siz.ng Bayesian optimiz.tion post-layout simulation

STCF conceptual design report (Volume 1): Physics & detector

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Frontiers of physics 2024年第1期19卷 1-154页

作者： M.Achasov x.C.Ai L.P.An R.Aliberti Q.An x.z.Bai Y.Bai O.Bakina A.Barnyakov V.Blinov V.Bobrovnikov D.Bodrov A.Bogomyagkov A.Bondar I.Boyko z.H.Bu F.M.Cai H.Cai J.J.Cao Q.H.Cao x.Cao z.Cao Q.Chang K.T.Chao D.Y.Chen H.Chen H.x.Chen J.F.Chen K.Chen L.L.Chen P.Chen S.L.Chen S.M.Chen S.Chen S.P.Chen W.Chen x.Chen x.F.Chen x.R.Chen Y.Chen Y.Q.Chen H.Y.Cheng J.Cheng S.Cheng T.G.Cheng J.P.Dai L.Y.Dai x.C.Dai D.Dedovich A.Denig I.Denisenko J.M.Dias D.z.Ding L.Y.Dong W.H.Dong V.Druz.inin D.S.Du Y.J.Du z.G.Du L.M.Duan D.Epifanov Y.L.Fan S.S.Fang z.J.Fang G.Fedotovich C.Q.Feng x.Feng Y.T.Feng J.L.Fu J.Gao Y.N.Gao P.S.Ge C.Q.Geng L.S.Geng A.Gilman L.Gong T.Gong B.Gou W.Gradl J.L.Gu A.Guevara L.C.Gui A.Q.Guo F.K.Guo J.C.Guo J.Guo Y.P.Guo z.H.Guo A.Guskov K.L.Han L.Han M.Han x.Q.Hao J.B.He S.Q.He x.G.He Y.L.He z.B.He z.x.Heng B.L.Hou T.J.Hou Y.R.Hou C.Y.Hu H.M.Hu K.Hu R.J.Hu W.H.Hu x.H.Hu Y.C.Hu J.Hua G.S.huang J.S.huang M.huang Q.Y.huang W.Q.huang x.T.huang x.J.huang Y.B.huang Y.S.huang N.Hüsken V.Ivanov Q.P.Ji J.J.Jia S.Jia z.K.Jia H.B.Jiang J.Jiang S.z.Jiang J.B.Jiao z.Jiao H.J.Jing x.L.Kang x.S.Kang B.C.Ke M.Kenz.e A.Khoukaz.I.Koop E.Kravchenko A.Kuz.in Y.Lei E.Levichev C.H.Li C.Li D.Y.Li F.Li G.Li G.Li H.B.Li H.Li H.N.Li H.J.Li H.L.Li J.M.Li J.Li L.Li L.Li L.Y.Li N.Li P.R.Li R.H.Li S.Li T.Li W.J.Li x.Li x.H.Li x.Q.Li x.H.Li Y.Li Y.Y.Li z.J.Li H.Liang J.H.Liang Y.T.Liang G.R.Liao L.z.Liao Y.Liao C.x.Lin D.x.Lin x.S.Lin B.J.Liu C.W.Liu D.Liu F.Liu G.M.Liu H.B.Liu J.Liu J.J.Liu J.B.Liu K.Liu K.Y.Liu K.Liu L.Liu Q.Liu S.B.Liu T.Liu x.Liu Y.W.Liu Y.Liu Y.L.Liu z.Q.Liu z.Y.Liu z.W.Liu I.Logashenko Y.Long C.G.Lu J.x.Lu N.Lu Q.F.Lü Y.Lu Y.Lu z.Lu P.Lukin F.J.Luo T.Luo x.F.Luo Y.H.Luo H.J.Lyu x.R.Lyu J.P.Ma P.Ma Y.Ma Y.M.Ma F.Maas S.Malde D.Matvienko z.x.Meng R.Mitchell A.Nefediev Y.Nefedov S.L.Olsen Q.Ouyang P.Pakhlov G.Pakhlova x.Pan Y.Pan E.Passemar Y.P.Pei H.P.Peng L.Peng x.Y.Peng x.J.Peng K.Peters S.Pivovarov E.Pyata B.B.Qi Y.Q.Qi W.B.Qian Y.Qian C.F.Qiao J.J.Qin J.J.Qin L.Q.Qin x.S.Qin T.L.Qiu J.Rademacker C.F.Redmer H.Y.Sang Anhui University Hefei 230039China Beihang University Beijing 100191China Budker Institute of Nuclear Physics Novosibirsk 630090Russia CAS Key Laboratory of Theoretical Physics Institute of Theoretical PhysicsChinese Academy of SciencesBeijing 100190China Cavendish Laboratory University of CambridgeJJ Thomson AveCambridge CB30HEUnited Kingdom Central China Normal University Wuhan 430079China Central South University Changsha 410083China China University of Geosciences Wuhan 430074China China University of Mining and Technology Xuzhou 221116China École Polytechnique Fédérale de Lausanne(EPFL) LausanneSwitzerland Fudan University Shanghai 200433China Goethe University Frankfurt D-60325 Frankfurt am MainGermany Guangx. Normal University Guilin 541004China Guangx. Uninversity Nanning 530004China Hangz.ou Institute for Advanced Study UCASHangzhou 310024China Hebei Normal University Shijiazhuang 050024China Hebei University Baoding 071002China Hefei University of Technology Hefei 230601China Helmholtz.Institute Mainz Staudinger Weg 18D-55099 MainzGermany Henan Normal University Xinxiang 453007China Henan University Kaifeng 475004China High Energy Physics Center Chung-Ang UniversitySeoul 06974Korea Higher School of Economy 11 Pokrovsky Bulvar Moscow 109028Russia huangshan University Huangshan 245000China Hubei University of Automotive Technology Shiyan 442002China Hunan Normal University Changsha 410081China Hunan University of Science and Technology Xiangtan 411201China Hunan University Changsha 410082China Indiana University BloomingtonIndiana 47405USA Inner Mongolia University Hohhot 010021China Institute of Advanced Science Facilities Shenzhen 518107China Institute of High Energy Physics Chinese Academy of SciencesBeijing 100049China Institute of Modern Physics Chinese Academy of SciencesLanzhou 730000China Institute of Physics Academia SinicaTaipeiTaiwan 11529China Institute of Theoretical Physics Chinese Academy of SciencesBeijing 100190China Jilin University Changch

The superτ-charm facility(STCF)is an electron–positron collider proposed by the Chinese particle physics *** is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of 0.5×10^(35) cm^(–2)·s^(–1) or *** STCF will produce a data sample about a factor of 100 larger than that of the presentτ-charm factory—the BEPCII,providing a unique platform for ex.loring the asymmetry of matter-antimatter(charge-parity violation),in-depth studies of the internal structure of hadrons and the nature of non-perturbative strong interactions,as well as searching for ex.tic hadrons and physics beyond the Standard *** STCF project in China is under development with an ex.ensive R&D *** document presents the physics opportunities at the STCF,describes conceptual designs of the STCF detector system,and discusses future plans for detector R&D and physics case studies.

关键词： electron–positron collider tau-charm region high luminosity STCF detector conceptual design