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Science China(Physics,Mechanics & Astronomy) 2015年第2期58卷 1-13页

作者： QIU WeiCheng hu weida National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences

For non-destructive optical characterization, laser beam induced current(LBIC) microscopy has been developed into as a quantitative tool to examine individual photodiodes within a large pixel array. Two-dimensional LBIC microscopy, also generally called photocurrent mapping(PC mapping), can provide spatially resolved information about local electrical properties and p-n junction formation in photovoltaic infrared(including visible light) photodetectors from which it is possible to extract material and device parameters such as junction area, junction depth, diffusion length, leakage current position and minority carrier diffusion length etc. This paper presents a comprehensive review of research background, operating principle, fundamental issues, and applications of LBIC or PC mapping.

关键词： laser beam induced current photocurrent mapping focal plane array photocurrent infrared photodetector

Hybrid heterojunctions based on 2D materials and 3D thin-films for high-performance photodetectors

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Science China(Physics,Mechanics & Astronomy) 2017年第2期60卷 85-86页

作者： HeHai Fang weida hu National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China

Photodetectors, converting optical signals to electrical signals, play a significant role in our daily life. Two-dimensional （2D） materials, such as graphene and transition metal dichalcogenides （TMDs）, have displayed excellent mechanical, optical, electric, thermal properties and have been proved to be appealing building blocks for optoelectronic applications. However, for the 2D material-based photodetectors,

关键词：光电探测器二维材料异质结过渡金属硫化物混合薄膜 3D 性能

"Clean"doping to advance 2D material phototransistors

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Light(Science & Applications) 2022年第7期11卷 1322-1323页

作者： Zhen Wang Peng Wang weida hu State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences200083ShanghaiChina

Doping is an essential element to develop next-generation electronic and optoelectronic devices and has to break the limit of specific steps during material synthesis and device *** the authors reveal“clean”doping to enhance the electric and photoelectric performance of two-dimensional(2D)indium selenide(InSe)via a neutron-transmutation method for the first time,even after device fabrication.

关键词： optoelectronic doping Clean

Infrared avalanche photodiodes from bulk to 2D materials

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Light(Science & Applications) 2023年第10期12卷 2027-2052页

作者： Piotr Martyniuk Peng Wang Antoni Rogalski Yue Gu Ruiqi Jiang Fang Wang weida hu Institute of Applied Physics Military University of Technology2 Kaliskiego Street00-908WarsawPoland State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu-Tian RoadShanghaiChina

Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of A^(Ⅲ)B^(Ⅴ), A^(Ⅱ)B^(Ⅵ), and potential alternatives to formerly mentioned—“third wave” superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device’s performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in A^(Ⅲ)B^(Ⅴ) APDs, such as AlInAsSb, which may be used in future optical communications, type-Ⅱ superlattice (T2SLs, “Ga-based” and “Ga-free”), and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed A^(Ⅲ)B^(Ⅴ) APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs’ performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs’ active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~10^(5) for MWIR [wavelength, λ = 4 μm, temperature, T = 10–180 K, Black Phospho

关键词： Infrared noise mentioned

The Electrocatalytic Performance of Rare Earth Ion Doped Co_(0.2)Ni_(0.8)-MOF-74 Catalyst for Nitrogen Reduction

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Journal of Wuhan University of Technology(Materials Science) 2024年第6期39卷 1337-1347页

作者： YUE Song GONG Lunjun YANG Tonghui hu weida LIU Xiaopan GAO Pengzhao XIAO Hanning College of Materials Science and Engineering Hunan UniversityChangsha 410082China College of Materials Science and Engineering Xiangtan UniversityXiangtan 411199China Liling Ceramic College Hunan University of TechnologyZhuzhou 412200China hunan Yangdong Porcelain Insulators&Electric Co.Ltd. Zhuzhou 412205China

We took Co_(0.2)Ni_(0.8)-MOF-74 with bimetallic synergistic effect as the basic material,and selected rare earth ions Ho,Gd,and Er with ion radii close to Co and Ni as the research objects for *** influence of rare earth ion doping amount and doping type on the eNRR performance of the catalyst was *** experimental results show that the ammonia yield rate and Faraday efficiency doped with Co_(0.2)Ni_(0.8)-MOF-0.5Ho are the highest,reaching 1.28×10^(-10)mol·s^(-1)·cm^(-2)/39.8%,which is higher than the1.12×10^(-10)mol·s^(-1)·cm^(-2)/32.2%of Co_(0.2)Ni_(0.8)-MOF-74,and is about 14.3%/23.7%higher than that without doping,*** the stability of Co_(0.2)Ni_(0.8)-MOF-0.5 Ho is good(after 80 hours of continuous testing,the current density did not significantly decrease).This is mainly due to doping,which gives Co_(0.2)Ni_(0.8)-MOF-74 a larger specific surface area and catalytic active *** catalyst doped at the same time has more metal cation centers,which increases the electron density of the metal centers and enhances the corresponding eNRR performance.

关键词： electrocatalytic nitrogen reduction metal organic framework rare earth ions doping

Influence of Heat Treatment Temperature on Microstructure and Bonding of TiO2 Film Coated on Diamond Particles Surface

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Journal of Wuhan University of Technology(Materials Science) 2017年第5期32卷 1008-1012页

作者：刘小磐 KONG Weibing XIAO Haiyan TANG Hao WAN Long hu weida 王伟 School of Materials Science & Engineering Hunan University State Key Laboratory of Silicate Materials for Architectures Wuhan University of Technology Guangdong Feng hua Advanced Technology (Holding) CO LTD School of Metallurgical Engineering Hunan University of Technology School of Automotive Engineering Wuhan University of Technology hubei Province Key Laboratory of Modern Automotive Technology hubei Province Automotive Parts Synergy Innovation Center

TiO_2 films were coated on the surface of diamond particles using a sol-gel method. The effects of heat treatment temperature on the morphology, phase composition and chemical bond of diamond particles coated with TiO2 films were investigated through SEM, TEM, X-ray diffraction analysis, Raman spectroscopy, FTIR, and XPS. The results showed that when being heat-treated at 600 ℃, the amorphous TiO_2 film transfered to the anatase film which bonded well with diamond substrate. Meanwhile, the Ti-O-C bond formed between TiO2 film and diamond substrate. When being heat-treated at 800 ℃, TiO2 film was still anatase, and partial diamond began to graphitize. The graphitizated carbon could also form the Ti-O-C bond with TiO_2 film, although TiO_2 film would tend to crack in this case.

关键词： diamond TiO2 film heat treatment temperature chemical bond

Ultrafast and broadband photodetectors based on a perovskite/organic bulk heterojunction for large-dynamic-range imaging

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Light(Science & Applications) 2020年第1期9卷 1723-1730页

作者： Chenglong Li Hailu Wang Fang Wang Tengfei Li Mengjian Xu Hao Wang Zhen Wang Xiaowei Zhan weida hu Liang Shen State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin University2699 Qianjin StreetChangchun 130012China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yutian RoadShanghai 200083China University of Chinese Academy of Sciences Beijing 100049China Department of Materials Science and Engineering College of EngineeringKey Laboratory of Polymer Chemistry and Physics of Ministry of EducationPeking UniversityBeijing 100871China

Organic-inorganic hybrid perovskite(OIHP)photodetectors that simultaneously achieve an ultrafast response and high sensitivity in the near-infrared(NIR)region are prerequisites for expanding current monitoring,imaging,and optical communication ***,we demonstrate photodetectors constructed by OIHP and an organic bulk heterojunction(BHJ)consisting of a low-bandgap nonfullerene and polymer,which achieve broadband response spectra up to 1μm with a highest external quantum efficiency of approximately 54%at 850 nm,an ultrafast response speed of 5.6 ns and a linear dynamic range(LDR)of 191 *** sensitivity,ultrafast speed and a large LDR are preeminent prerequisites for the practical application of ***,due to the high-dynamicrange imaging capacity,high-quality visible-NIR actual imaging is achieved by employing the OIHP *** believe that state-of-the-art OIHP photodetectors can accelerate the translation of solution-processed photodetector applications from the laboratory to the imaging market.

关键词： heterojunction dynamic photodetector

Effect of ZrO_2 Content on the Properties of Diamond Grinding Wheel Vitrified Bond

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Journal of Wuhan University of Technology(Materials Science) 2014年第1期29卷 19-22页

作者：刘小磐 QIAO Ang WAN Long hu weida SONG Dongdong LI Zheng YIN Zhongjie 潘瑞琨 School of Material Science and Engineering Hunan University State Key Laboratory of Silicate Materials for Architectures (Wuhan University of Technology) School of Materials Science and Engineering Hubei University

The effect of ZrO2 content on the performance of vitrified bond was discussed. The results showed that when the ZrO2 content was less than 2 mol%, Zr4＋ could enter into the glassy network as mending nets and agglomeration composition. In this case, with the increasing of ZrO2, the vitrified bond＇s bending strength increased and the expansion coefficient decreased. It was also found that the wetting angle between the vitrified bond and diamond got small because Zr4＋ was enriched on diamond surface. When ZrO2 content was more than 2 mol%, a part of ZrO2 existing in vitrified bond as ZrO2 particles played the role in nucleating agents and promoting the separation of spodttrnene. When ZrO2 content was 3 mol%, the bending strength of the vitrified bond reached its maximum of 128 MPa and the wetting angle with the diamond reached its minimum of 37.6°.

关键词： ZrO2 vitrified bond bending strength expansion coefficient wetting angle

A study on ionic gated MoS2 phototransistors

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Science China(Information Sciences) 2019年第12期62卷 133-140页

作者： Binmin WU Xudong WANG Hongwei TANG Tie LIN Hong SHEN weida hu Xiangjian MENG Wenzhong BAO Jianlu WANG Junhao Chu School of Physical Science and Technology Shanghai Tech University State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences University of Chinese Academy of Sciences State Key Laboratory of ASIC and System School of Microelectronics Fudan University

Molybdenum disulfide(MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an Mo S2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2and source/drain electrodes can be widely regulated from 11 to 179 me V. The MoS2phototransistor exhibits excellent responsivity of 2.68 × 104A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors.

关键词： MoS2 phototransistor electrolyte-gel gating Schottky barrier electric double layer two-dimensional materials

Configurable circular-polarization-dependent optoelectronic silent state for ultrahigh light ellipticity discrimination

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Light(Science & Applications) 2023年第8期12卷 1651-1660页

作者： Yonghao Bu Xiansong Ren Jing Zhou Zhenhan Zhang Jie Deng Hangyu Xu Runzhang Xie Tianxin Li weida hu Xia Guo Wei Lu Xiaoshuang Chen State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian Road200083 ShanghaiChina University of Chinese Academy of Sciences 19 Yuquan Road100049 BeijingChina State Key Laboratory for Information Photonics and Optical Communications School of Electronic EngineeringBeijing University of Posts and Telecommunications100876 BeijingChina

Filterless light-ellipticity-sensitive optoelectronic response generally has low discrimination,thus severely hindering the development of monolithic polarization ***,we achieve a breakthrough based on a configurable circular-polarization-dependent optoelectronic silent state created by the superposition of two photoresponses with enantiomerically opposite ellipticity *** zero photocurrent and the significantly suppressed noise of the optoelectronic silent state singularly enhance the circular polarization extinction ratio(CPER)and the sensitivity to light ellipticity *** CPER of our device approaches infinity by the traditional *** newly established CPER taking noise into account is 3-4 orders of magnitude higher than those of ordinary integrated circular polarization detectors,and it remains high in an expanded wavelength *** noise equivalent light ellipticity difference goes below 0.009° Hz-1/2 at modulation frequencies above 1000 Hz by a light power of 281 *** scheme brings a leap in developing monolithic ultracompact circular polarization detectors.

关键词： circular state ordinary