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Application and Improvements of the Wing Deformation Capture with Simulation for Flapping Micro Aerial Vehicle

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Journal of Bionic Engineering 2020年第6期17卷 1096-1108页

作者： wee-beng tay Siddharth Jadhav Jian-Lei Wang Centre for Aerodynamics&Propulsion Temasek LaboratoriesNational University of SingaporeSingapore 117411Republic of Singapore Shaanxi Aerospace Flight Vehicle Design Key Laboratory School of AstronauticsNorthwestern Polytechnical UniversityXi'an 710072China

Wing deformation capture with simulation is a mixed experimental-numerical approach whereby the wing deformation during flapping is captured using high-speed cameras and used as an input for the numerical *** is an alternative approach compared to pure experiment or full fluid structure interaction *** study is an update to the previous paper by tay et al.,which aims to address the previous *** show through thrust and vorticity contour plots that this approach can simulate Flapping Micro Aerial Vehiclex(FMAVs)with reasonable ***,we use this approach to explain the thrust improvement when an additional rib is added to the original membrane wing,which is due to longer duration for the new wing to open during the fling ***,by decreasing the number of points and frames per cycle on the wing,we can simplify and shorten the digitization *** results show that this approach is an accurate and practical alternative which can be applied to general bio-inspired research.

关键词： flapping MAV immersed boundary method wing deformation membrane wings

Numerical Simulation of Flapping Wing MAVs in V-formation

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Journal of Bionic Engineering 2019年第2期16卷 264-280页

作者： wee-beng tay Kishen Raj Murugaya Woei-Leong Chan Boo-Cheong Khoo Temasek Laboratories National University of Singapore5A Engineering Drive 1117411Republic of Singapore Department of Mechanical Engineerings National University of Singapore 5A Engineering Drive 1117411Republic of Singapore

The purpose of this research is to understand the aerodynamics of Flapping wing Micro Aerial Vehicles(FMAVs)flying in V-formation and how V-fbrmation can improve the endurance of *** tested FMAVs with two types of flapping kinematics:(1)idealized sinusoidal flapping/pitching motion,(2)actual FMAV wing deformation *** the design of experiment methodology,together with an immersed boundary method numerical solver,we investigate the effects of phase angle and x,v,z separation between the wings on the FMAVs'*** show that it is possible to obtain an overall thrust and lift improvement of up to 25%and 14%respectively,or a reduction of both 19%,compared to the single wing ***,for certain cases,we extend another row,leading to a total of five *** show that in general,the additional thrust or lift experienced by the second row of wings is also experienced by the third row of ***,this may apply to subsequent rows too.

关键词： flapping wing V-fbrmation immersed boundary methods MAV design of experiment

Fin field-effect transistors based on 2D Bi_(2)O_(2)Se——a huge innovation of 2D transistors device structure

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Science China Chemistry 2023年第9期66卷 2439-2440页

作者： Qundong Fu beng Kang tay Zheng Liu School of Materials Science and Engineering Nanyang Technological UniversitySingapore 639798Singapore CINTRA CNRS/NTU/THALES UMI 3288Research Techno PlazaSingapore 637553Singapore

The continuous downscaling(sub 5-nm nodes) of the processing technology is severely hampered by the shortchannel effects of the silicon(Si) material, which degrade the transistor's performance and raise the demand in the development of new device structures and materials to overcome them. Two-dimensional(2D) semiconductors are promising candidates for next-generation electronic materials owing to their atomic thickness and van der Waals(vdW) surface.

关键词： transistors transistor overcome

Valley polarization in stacked MoS2 induced by circularly polarized light

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Nano Research 2017年第5期10卷 1618-1626页

作者： Juan Xia Xingli Wang beng Kang tay Shoushun Chen Zheng Liu Jiaxu Yan Zexiang Shen Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore NOVITAS Nanoelectronics Centre of Excellence School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798 Singapore CINTRA CNRS/NTU/-I-HALES UM13288 Research Techno Plaza Singapore 637553 Singapore School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798 Singapore Center for Programmable Materials School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore Institute of Advanced Materials (IAM) Jiangsu National Synergistic Innovation Can tar for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China Centre for Disruptive Photonic Technologies Nanyong Technological University Singapore 63737L Singapore

Manipulation of valley pseudospins is crucial for future valleytronics. lhe emerging transition metal dichalcogenides （TMDs） provide new possibilities for exploring the interplay among the quantum degrees of freedom, including real spin, valley pseudospin, and layer pseudospin. For example, spin-valley coupling results in valley-dependent circular dichroism in which electrons with particular spin （up or down） can be selectively excited by chiral optical pumping in monolayer TMDs, whereas in few-layer TMDs, the interlayer hopping further affects the spin-valley coupling. In addition to valley and layer pseudospins, here we propose a new degree of freedom--stacking pseudospin--and demonstrate new phenomena correlated to this new stacking freedom that otherwise require the application of external electrical or magnetic field. We investigated all possible stacking configurations of chemical-vapor-deposition-grown trilayer MoS2 （AAA, ABB, AAB, ABA, and 3R）. Although the AAA, ABA, 3R stackings possess a sole peak with lower degree of valley polarization than that in monolayer samples, the AAB （ABB） stackings exhibit two distinct peaks, one similar to that observed in monolayer MoS2 and findings provide a more future valleytronics. an additional unpolarized complete understanding of peak at lower energy. Our valley quantum control for

关键词： circularly polarizedphotoluminescence,first-principlescalculations,molybdenum disulfide,ultra-low-frequency Raman spectroscopy valley polarization

Theoretical study of defect impact on two-dimensional MoS_2

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Journal of Semiconductors 2015年第12期36卷 18-23页

作者： Anna V.Krivosheeva Victor L.Shaposhnikov Victor E.Borisenko Jean-Louis Lazzari Chow Waileong Julia Gusakova beng Kang tay Belarusian State University of Informatics and Radioelectronics CNRS Aix-Marseille Université NOVITAS Nanoelectronics Centre of Excellence School of Electrical and Electronic Engineering Nanyang Technological University CINTRA CNRS NTUTHALES Nanyang Technological University

Our theoretical findings demonstrate for the first time a possibility of band-gap engineering of monolayer MoS2 crystals by oxygen and the presence of vacancies. Oxygen atoms are revealed to substitute sulfur ones, forming stable MoS2-xOx ternary compounds, or adsorb on top of the sulfur atoms. The substituting oxygen provides a decrease of the band gap from 1.86 to 1.64 eV and transforms the material from a direct-gap to an indirect-gap semiconductor. The surface adsorbed oxygen atoms decrease the band gap up to 0.98 eV depending on their location tending to the metallic character of the electron energy bands at a high concentration of the adsorbed atoms. Oxygen plasma processing is proposed as an effective technology for such band-gap modifications.

关键词： two-dimensional crystal molybdenum disulfide band gap vacancy oxygen

Association between the elderly frequent attender to the emergency department and 30-day mortality： A retrospective study over 10 years

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World Journal of Emergency Medicine 2018年第1期9卷 20-25页

作者： Yuzeng Shen Yee Chien tay Edward wee Kwan Too Nan Liu Shao Wei Lam Marcus Eng Hock Ong Department of Emergency Medicine Singapore General Hospital Singapore Department of Emergency Medicine Sengkang Health Singapore Business Analytics Program National University of Singapore Singapore Singhealth Health Selvices Research Centre Singapore

BACKGROUND: To determine if elderly frequent attenders are associated with increased 30-day mortality, assess resource utilization by the elderly frequent attenders and identify associated characteristics that contribute to mortality. METHODS: Retrospective observational study of electronic clinical records of all emergency department(ED) visits over a 10-year period to an urban tertiary general hospital in Singapore. Patients aged 65 years and older, with 3 or more visits within a calendar year were identified. Outcomes measured include 30-day mortality, admission rate, admission diagnosis and duration spent at ED. Chi-square-tests were used to assess categorical factors and Student t-test was used to assess continuous variables on their association with being a frequent attender. Univariate and multivariate logistic regressions were conducted on all significant independent factors on to the outcome variable(30-day mortality), to determine factor independent odds ratios of being a frequent ***: 1.381 million attendance records were analyzed. Elderly patients accounted for 25.5% of all attendances, of which 31.3% are frequent attenders. Their 30-day mortality rate increased from 4.0% in the first visit, to 8.8% in the third visit, peaking at 10.2% in the sixth visit. Factors associated with mortality include patients with neoplasms, ambulance utilization, male gender and having attended the ED the previous ***: Elderly attenders have a higher 30-day mortality risk compared to the overall ED population, with mortality risk more marked for frequent attenders. This study illustrates the importance and need for interventions to address frequent ED visits by the elderly, especially in an aging society.

关键词： Frequent attenders Elderly Emergency department Mortality

Direct observation of ultrafast plasmonic hot electron transfer in the strong coupling regime

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Light(Science & Applications) 2019年第1期8卷 1099-1107页

作者： Hangyong Shan Ying Yu Xingli Wang Yang Luo Shuai Zu Bowen Du Tianyang Han Bowen Li Yu Li Jiarui Wu Feng Lin Kebin Shi beng Kang tay Zheng Liu Xing Zhu Zheyu Fang School of Physics State Key Lab for Mesoscopic Physics/Academy for Advanced Interdisciplinary Studies/Collaborative Innovation Center of Quantum MatterPeking University100871 BeijingChina CNRS International-NTU-Thales Research Alliance(CINTRA) Nanyang Technological UniversitySingapore 637553Singapore Centre for Micro-/Nano-Electronics(NOVITAS) School of Electrical and Electronic Engineering/Centre for Programmed MaterialsSchool of Materials Science and EngineeringNanyang Technological UniversitySingapore 637553Singapore

Achieving strong coupling between plasmonic oscillators can significantly modulate their intrinsic optical ***,we report the direct observation of ultrafast plasmonic hot electron transfer from an Au grating array to an MoS_(2) monolayer in the strong coupling regime between localized surface plasmons(LSPs)and surface plasmon polaritons(SPPs).By means of femtosecond pump-probe spectroscopy,the measured hot electron transfer time is approximately 40 fs with a maximum external quantum yield of 1.65%.Our results suggest that strong coupling between LSPs and SPPs has synergetic effects on the generation of plasmonic hot carriers,where SPPs with a unique nonradiative feature can act as an‘energy recycle bin’to reuse the radiative energy of LSPs and contribute to hot carrier *** energy exchange between plasmonic modes in the strong coupling regime can further enhance the vertical electric field and promote the transfer of hot electrons between the Au grating and the MoS_(2) *** proposed plasmonic strong coupling configuration overcomes the challenge associated with utilizing hot carriers and is instructive in terms of improving the performance of plasmonic opto-electronic devices.

关键词： properties coupling transfer

用于神经形态学计算的低能耗、高稳定性2D-3D钙钛矿忆阻器

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Science China Materials 2023年第5期66卷 2013-2022页

作者：孙凯旋王庆瑞周龙王静娟常晶晶郭瑞 beng Kang tay 闫小兵 Key Laboratory of Brain-like Neuromorphic Devices and Systems of Hebei Province College of Electron and Information EngineeringHebei UniversityBaoding 071002China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China Centre for Micro-and Nano-Electronics(CMNE) School of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore 639798Singapore UMI 3288 CINTRA(CNRS-NTU-THALES Research Alliances) Nanyang Technological UniversitySingapore 637553Singapore

近年来,有机-无机卤化物钙钛矿在忆阻器和人工突触器件等电子器件中的应用取得了快速进展.由于其离子迁移特性和制造上的优势,有机-无机卤化物钙钛矿有望成为下一代计算设备的候选材料.本文采用ITO/FA_(1-y)MA_(y)PbI_(3-x)Cl_(x)/(PEA)... 详细信息

近年来,有机-无机卤化物钙钛矿在忆阻器和人工突触器件等电子器件中的应用取得了快速进展.由于其离子迁移特性和制造上的优势,有机-无机卤化物钙钛矿有望成为下一代计算设备的候选材料.本文采用ITO/FA_(1-y)MA_(y)PbI_(3-x)Cl_(x)/(PEA)_(2)PbI_(4)/Au的叠层结构,研究了2D-3D有机-无机杂化钙钛矿忆阻器.结果表明,这种新型忆阻器具有新颖的电阻开关特性,如扫描速率相关的电流开关特性、良好的电流-电压曲线重复性和超低能耗.利用p-i-n结模型证实了缺陷调制电子隧穿机制,并证明了忆阻器件的电导状态由电极侧附近钙钛矿薄膜中的缺陷浓度决定.除了良好的忆阻特性外,这种2D-3D钙钛矿型忆阻器还可以很好地用作人工突触,其内部缺陷运动可以真实地模拟生物突触中Ca^(2+)的流入和挤出.此外,由于有机-无机卤化物钙钛矿中的可切换p-i-n结构,这种基于钙钛矿的人工突触具有超低功耗.我们的发现展示了2D-3D钙钛矿忆阻器在未来神经形态计算系统中的巨大应用潜力.

关键词： perovskite ion migration memristor low energy consumption neuromorphic computing

Whole-genome sequencing to detect mutations associated with resistance to insecticides and Bt proteins in Spodoptera frugiperda

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Insect Science 2021年第3期28卷 627-638页

作者： Fang Guan Jianpeng Zhang Huiwen Shen Xingliang Wang Amanda Padovan Tom K.Walsh wee Tek tay Karl H.J.Gordon William James Cecilia Czepak Michael Hilary Otim Donald Kachigamba Yidong Wu College of Plant Protection Nanjing Agricultural UniversityNanjingChina CSIRO Black Mountain Laboratories Clunies Ross StreetCanberraACTAustralia Escola de Agronomia Universidade Federal de GoiasGoianiaBrazil National Crops Resources Research Institute NamulongeKampalaUganda Department of Agricultural Research Services(DARS) LilongweMalawi

The fall armyworm(FAW),Spodoptera frugiperda,is a major pest native to the Americas that has recently invaded the Old *** mutations in the target-site proteins acetylcholinesterase-1(ace-1),voltage-gated sodium channel(VGSC)and ryanodine receptor(RyR)have been identified in *** as major resistance mechanisms to organophosphate,pyrethroid and diamide insecticides *** in the adenosine triphosphate-binding cassette transporter C2 gene(ABCC2)have also been identified to confer resistance to Cry IF *** this study,we applied a whole-genome sequencing(WGS)approach to identify point mutations in the target-site genes in 150 FAW individuals collected from China,Malawi,Uganda and *** approach revealed three amino acid substitutions(A201S,G227A and F290V)of *** ace-1,which are known to be associated with organophosphate *** Brazilian population had all three ace-1 point mutations and the 227A allele(mean frequency=0.54)was the most *** from China,Malawi and Uganda harbored two of the three ace-1 point mutations(A201S and F290V)with the 290V allele(0.47-0.58)as the dominant *** mutations in VGSC(T929I,L932F and L1014F)and RyR(I4790M and G4946E)were not detected in any of the 150 individuals.A novel 12-bp insertion mutation in exon 15 of the ABCC2 gene was identified in some of the Brazilian individuals but absent in the invasive *** results not only demonstrate robustness of the WGS-based genomic approach for detection of resistance mutations,but also provide insights for improvement of resistance management tactics in ***.

关键词： Bt resistance insecticide resistance mutation detection Spodoptera frugiperda whole-genome sequencing