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postoperative change of anti-Thomsen-Friedenreich and Tn IgG level: The follow-up study of gastrointestinal cancer patients

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World Journal of Gastroenterology 2008年第27期14卷 4352-4358页

作者： Eugeniy p Smorodin Oleg A Kurtenkov Boris L Sergeyev Kristel E Kodar Valentin I Chuzmarov vladimir p afanasyev Department of Oncology & Immunology National Institute for Health Development Oncological Centre North-Estonian Regional Hospital

AIM: To study the influence of tumor removal on the serum level of IgG antibodies to tumor-associated Thomsen-Friedenreich (TF), Tn carbohydrate epitopes and xenogeneic αGal, and to elucidate on the change of the level during the follow-up as well as its association with the stage and morphology of the tumor and the values of blood parameters in gastrointestinal cancer. METHODS: Sixty patients with gastric cancer and 34 patients with colorectal cancer in stages Ⅰ-Ⅳ without distant metastases were subjected to follow- up. The level of antibodies in serum was determined by the enzyme-linked immunosorbent assay (ELISA) using synthetic polyacrylamide (pAA) glycoconjugates. Biochemical and haematological analyses were performed using automated equipment. RESULTS: In gastrointestinal cancer, the TF antibody level was found to have elevated significantly after the removal of G3 tumors as compared with the preoperative level (u = 278.5, p patients (sign test, 20 vs 8, p p pectively). In gastrointestinal cancer, the elevated postoperative level of TF, Tn and αGal antibodies was noted in most patients with G3 tumors (sign test, 22 vs 5, p p p pectively), but the elevation was not significant in patients with G1 + G2 resected tumors. The postoperative follow-up showed that the percentage of patients with G3 resected tumors of the digestive tract, who had a mean level of anti-TF IgG above the cut- off value (1.53), was significantly higher than that of patients with G1 + G2 resected tumors (χ2 = 3.89, all patients; χ2 = 5.34, patients without regional lymph node metastases; p percentage of patients with a tumor in stage I, whose mean anti-TF IgG level remained above the cut-off value (1.26), was significantly higher than that of patients with the cancer in stages Ⅲ-Ⅳ (χ2 = 4.71, gastric canc

关键词： IgG antibodies Thomsen-Friedenreich Tn αGal Gastrointestinal cancer Immunosuppression CA 19-9

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Selection of shaped charges parameters for producing aluminum particles with velocities in the range of 2.5-16 km/s

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Defence Technology（防务技术） 2024年第8期38卷 126-135页

作者： vladimir I.Kolpakov Sergey V.Fedorov Ekaterina p.Vinogradova Irina A.Bolotina Bauman Moscow State Technical University Moscow 105005Russia

Testing rocket and space technology objects in ground conditions for resistance to the impact of meteoroids and fragments of space debris can be carried out using shaped charges. To substantiate the design parameters of shaped charges that ensure the formation of aluminum particles in a wide velocity range(from 2.5 to 16 km/s), numerical modeling of the formation process was carried out within the framework of a two-dimensional axisymmetric problem of continuum mechanics using three different computing codes to increase the reliability of the results. The calculations consider shaped charges with a diameter of 20-100 mm with aluminum liners of various shapes. It is shown that the formation of particles with velocities close to the lower limit of the considered range is ensured by gently sloping segmental liners of degressive thickness. To form higher-velocity particles with velocities over 5 km/s, it is proposed to use combined liners, the jet-forming part of which has the shape of a hemisphere of constant thickness or the shape of a semi-ellipsoid or semi-superellipsoid of rotation of degressive thickness.

关键词： Space debris Meteoric impact Explosion Shaped charge High-velocity aluminum element Segmental liner Combined liner Numerical simulation

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physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism

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Journal of Semiconductors 2024年第8期45卷 25-33页

作者： Fedor I.Manyakhin Dmitry O.Varlamov vladimir p.Krylov Lyudmila O.Morketsova Arkady A.Skvortsov vladimir K.Nikolaev Dinamics Strength of Machines and Resisance of MaterialsMoscow Polytechnic UniversityRussia Biomedical and Electronic Means and Technologies Vladimir State UniversityRussia Computer-Aided Design and Engineering National University of Science and Technology"MISiS"Russia

Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their *** technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.

关键词： light-emitting diodes with quantum wells voltage−current relation nonideality factor recombination mechanism Sah−Noyce−Shockley model

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Inversion of walkaway VSp data in the presence of lateral velocity heterogeneity

Energy Geoscience

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Energy Geoscience 2024年第2期5卷 304-313页

作者： vladimir Grechka Ilya Tsvankin pedro Contreras CWp Department of GeophysicsColorado School of MinesGoldenCO80401USA pDVSA-INTEVEp Apartado 76343Caracas1070AVenezuela Borehole Seismic LLC USA Department of physics ULAVenezuela

Multi-azimuth walkaway vertical seismic profiling is an established technique for the estimation of in situ slowness surfaces and inferring anisotropy ***,this technique requires the assumption of lateral homogeneity,which makes the horizontal slowness components at depths of downhole receivers equal to those measured at the *** violations of this assumption,such as lateral heterogeneity or nonzero dip of intermediate interfaces,lead to distortions in reconstructed slowness surfaces and,consequently,to errors in estimated anisotropic *** this work,we relax the assumption of lateral homogeneity and discuss how to correct vertical seismic profile data for weak lateral *** describe a procedure of downward continuation of recorded traveltimes that accounts for the presence of both vertical inhomogeneity and weak lateral heterogeneity,which produces correct slowness surfaces at depths of downhole receivers,noticing that sufficiently dense receiver coverage along a borehole is required to separate influences of vertical and lateral heterogeneity on measured traveltimes and obtain accurate estimates of the slowness *** the slowness surfaces are found and a desired type of anisotropic model to be inverted is selected,the corresponding anisotropic parameters,providing the best fit to the estimated slownesses,can be *** invert the slowness surfaces of p-waves for parameters of the simplest anisotropic model describing dipping fractures(transversely isotropic medium with a tilted symmetry axis).Five parameters of this model,namely,the p-wave velocity V0 in the direction of the symmetry axis,Thomsen's anisotropic coefficients e and d,the tilt n,and the azimuth b of the symmetry axis,can be estimated in a stable manner when maximum source offset is greater than half of receiver depth.

关键词： Walkaway vertical seismic profile Lateral velocity heterogeneity Anisotropic parameter estimation Vertical inhomogeneity

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Ferroelectricity Induced by Oxygen Vacancies in Rhombohedral ZrO_(2) Thin Films

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Energy & Environmental Materials 2024年第1期7卷 229-237页

作者： Veniero Lenzi José p.B.Silva Břetislav Šmíd vladimir Matoín Cosmin M.Istrate Corneliu Ghica Judith L.MacManus-Driscoll Luís Marques physics Center of Minho and porto Universities(CF-UM-Up) University of MinhoCampus de Gualtar 4710-057Braga Portugal Laboratory of physics for Materials and Emergent Technologies LapMETUniversity of Minho4710-057Braga Portugal Department of Surface and plasma Science Faculty of Mathematics and PhysicsCharles UniversityV Holešovičkách 218000Prague 8 Czech Republic National Institute of Materials physics 105 bis Atomistilor 077125Magurele Romania Department of Materials Science and Metallurgy 27 Charles Babbage Rd.Cambridge CB3 OFSUK

Rhombohedral phase Hf_(x)Zr_(1.x)O_(2)(HZO,x from 0 to 1)films are promising for achieving robust ferroelectric polarization without the need for an initial wake-up pre-cycling,as is normally the case for the more commonly studied orthorhombic ***,a large spontaneous polarization observed in rhombohedral films is not fully understood,and there are also large discrepancies between experimental and theoretical *** this work,in rhombohedral ZrO_(2)thin films,we show that oxygen vacancies are not only a key factor for stabilizing the phase,but they are also a source of ferroelectric polarization in the *** is shown experimentally through the investigation of the structural properties,chemical composition and the ferroelectric properties of the films before and after an annealing at moderate temperature(400℃)in an oxygen environment to reduce the V_(o)concentration *** experimental work is supported by density functional theory(DFT)calculations which show that the rhombohedral phase is the most stable one in highly oxygen defective ZrO_(2)*** DFT calculations also show that V_(o)contribute to the ferroelectric *** findings reveal the importance of V_(o)for stabilizing rhombohedral ZrO_(2)thin films with superior ferroelectric properties.

关键词： charged defects ferroelectric polarization rhombohedral phase stability zirconia

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Superior piezoelectric performance with high operating temperature in bismuth ferrite-based ternary ceramics

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Journal of Materials Science & Technology 2024年第2期169卷 172-181页

作者： Yunyao Huang Leiyang Zhang Ruiyi Jing Yang Yang vladimir Shur Xiaoyong Wei Li Jin Electronic Materials Research Laboratory Key Laboratory of the Ministry of EducationSchool of Electronic Science and EngineeringXi’an Jiaotong UniversityXi’an 710049China Faculty of Materials and Manufacturing Key Laboratory of Advanced Functional MaterialsEducation Ministry of ChinaBeijing University of TechnologyBeijing 100124China School of Natural Sciences and Mathematics Ural Federal UniversityEkaterinburg620000Russia

Due to the thermal depolarization effect,adequate piezoelectric performance with high operating temperature is regarded to be challenging to accomplish concurrently in piezoceramics for applications in specific piezoelectric *** this work,we synthesized(0.8−x)BiFeO_(3)-x pbTi_(3)-0.2Ba(Zr_(0.25)Ti_(0.75))O_(3)(abbreviated as BFO-x pT-BZT)ternary solid solutions with 0.15≤x≤0.30 by conventional solid-state reaction *** MpB composition with a coexisting state of rhombohedral-tetragonal phases exhibits enhanced electromechanical properties,including Curie temperature of 380℃,large-signal equivalent piezoelectric coefficient d^(∗)_(33)of 395 pm V^(-1),small-signal piezoelectric coefficient d_(33)of 302 pC N^(-1),and electromechanical coupling factor k_(p)of 50.2%,which is comparable to commercial pZT-5A ceramics,indicating potential in high-temperature ***,in-situ X-ray diffraction(XRD)and piezoelectric force microscopic(pFM)techniques demonstrate that multiphase coexistence and complex nanodomains promote piezoelectric response via *** x=0.24 composition exhibits the highest in-situ d_(33)of 577 pC N^(-1)and good temperature stability in 30−280℃,indicating that BZT-modified BFO-pT ceramics are promising candidates for high-temperature piezoelectric devices.

关键词： High-temperature piezoelectrics Morphotropic phase boundary In-situ technique Domain structure BFO

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Technological parameters of thin-film pulsed laser scribing for perovskite photovoltaics

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Clean Energy 2024年第3期8卷 127-135页

作者： Rustam Ishteev pavel Gostishchev Mariia Tiukhova Anton Sorokin Arthur Ishteev vladimir Kondratenko Laboratory of precision Machining of Materials Department of NanoelectronicsInstitute for Advanced Technologies and Industrial ProgrammingRTU MIREAMoscowRussia Research and practical Clinical Center for Diagnostics and Telemedicine Technologies of the Moscow Health Care Department MoscowRussia Laboratory of Advanced Solar Energy(LASE) National University of Science and Technology MISIS4 Leninsky St.MoscowRussia Semenov Federal Research Center of Chemical physics Russian Academy of Sciences(RAS)4 Kosygina str.MoscowRussia

Over the past decade,the power conversion efficiency of halide perovskite solar cells has shown a rapid increase to 26.1%.The significant efficiency growth and the relative simplification of the technology for obtaining thin-film solar cells due to liquid printing methods determine the high potential for the low-cost perovskite solar cells ***,efficient use of cell geometry is comparable to the size of standard crystalline-Si wafers(156:156 mm and more).Therefore,modular geometry similar to amorphous-Si solar cell approaches is used to scale perovskite solar *** electrical connection of thin-film cells requires precise processing of the conductive layers that form the device p-i-n *** subject of research is the development of a full pulsed laser scribing cycle for inverted perovskite solar *** this work,we propose a study of a laser-patterning technology In_(2)O_(3):SnO_(2)(ITO)conductive layer and a photoactive perovskite layer Cs0,2(CH(NH_(2))_(2))_(0,8)pbI_(3).process regimes of transparent conducting electrodes based on ITO and halide perovskite layer Cs_(0,2)(CH(NH_(2))_(2))_(0,8)pbI_(3)laser patterning were *** optimal parameters for the multipass mode processing of ITO and perovskite layer were *** cell was electrically isolated at a scribe line width of 30μm.

关键词： patterning perovskite solar cell perovskite solar cell photovoltaics scribing

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Myths about Earthquakes: Quo vadis?

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Acta Geologica Sinica(English Edition) 2024年第S1期 30-32页

作者： vladimir KOSSOBOKOV Anastasia NEKRASOVA Institute of Earthquake prediction Theory and Mathematical Geophysics RAS Accademia Nazionale delle Scienze detta dei XL International Seismic Safety Organization

We are living in a world of numbers and calculations with enormous amount of pretty fast user-friendly software ready for an automatic output that may lead to a discovery or, alternatively, mislead to a deceptive conclusion, erroneous claims and predictions. As a matter of fact, nowadays, Science can disclose Natural Hazards, assess Risks, and deliver the state-of-the-art Knowledge of looming disaster in advance catastrophes along with useful Recommendations on the level of risks for decision making regarding engineering design, insurance, and emergency management.

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High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

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Journal of Semiconductors 2024年第4期45卷 56-62页

作者： Aleksei Almaev Alexander Tsymbalov Bogdan Kushnarev vladimir Nikolaev Alexei pechnikov Mikhail Scheglov Andrei Chikiryaka petr Korusenko Research and Development Center for Advanced Technologies in Microelectronics National Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia Department of Semiconductor Electronics and physics of Semiconductors National University of Science and Technology MISISMoscow 119049Russia perfect Crystals LLC Saint Petersburg 194223Russia Department of Solid-State Electronics Saint Petersburg State UniversitySaint Petersburg 199034Russia Department of physics Omsk State Technical UniversityOmsk 644050Russia

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with pt contacts were demonstrated and their properties were studied in ***κ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire *** spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 *** maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 ***.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 *** enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet *** detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the pt/κ(ε)-Ga_(2)O_(3)*** responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,*** rise and decay times in self-powered mode did not exceed 100 ms.

关键词： κ(ε)-gallium oxide solar-blind shortwave ultraviolet radiation detectors self-powered operation mode

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Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

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Journal of Semiconductors 2024年第8期45卷 74-80页

作者： Aleksei Almaev Alexander Tsymbalov Bogdan Kushnarev vladimir Nikolaev Alexei pechnikov Mikhail Scheglov Andrei Chikiryaka Laboratory of Metal Oxide Semiconductors Research and Development Center for Advanced Technologies in MicroelectronicsNational Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia Department of Semiconductor Electronics and physics of Semiconductors National University of Science and Technology MISISMoscow 119049Russia perfect Crystals LLC Saint Petersburg 194223Russia

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with pt interdigital *** films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase *** spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 *** maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) ***.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 *** high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole ***α-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the pt/α-Ga_(2)O_(3) *** a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

关键词： HVpE gallium oxide solar-blind ultraviolet detector self-powered mode

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