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Journal of Semiconductors 2024年第8期45卷 25-33页

作者： Fedor I.Manyakhin Dmitry O.Varlamov vladimir P.krylov Lyudmila O.Morketsova Arkady A.Skvortsov vladimir k.nikolaev Dinamics Strength of Machines and Resisance of MaterialsMoscow Polytechnic UniversityRussia Biomedical and Electronic Means and Technologies Vladimir State UniversityRussia Computer-Aided Design and Engineering National University of Science and Technology"MISiS"Russia

Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their *** technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.

关键词： light-emitting diodes with quantum wells voltage−current relation nonideality factor recombination mechanism Sah−Noyce−Shockley model

High-temperature annealing of(201)β-Ga_(2)O_(3) substrates for reducing structural defects after diamond sawing

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Journal of Semiconductors 2023年第12期44卷 125-132页

作者： Pavel Butenko Michael Boiko Mikhail Sharkov Aleksei Almaev Aleksnder kitsay vladimir krymov Anton Zarichny vladimir nikolaev MISiS University Moscow 119049Russia Perfect Crystala LLC St.Petersburg 194223Russia Tomsk State University Tomsk 634050Russia

A commercial epi-ready(201)β-Ga_(2)O_(3) wafer was investigated upon diamond sawing into pieces measuring 2.5×3 mm^(2).The defect structure and crystallinity in the cut samples has been studied by X-ray diffraction and a selective wet etching *** density of defects was estimated from the average value of etch pits calculated,including near-edge regions,and was obtained close to 109 cm^(-2).Blocks with lattice orientation deviated by angles of 1-3 arcmin,as well as non-stoichiometric fractions with a relative strain about(1.0-1.5)×10^(-4)in the[201]direction,were *** perfection was shown to decrease significantly towards the cutting lines of the *** reduce the number of structural defects and increase the crystal perfection of the samples via increasing defect motion mobility,the thermal annealing was *** and formation of a mosaic structure coupled with dislocation wall appearance upon 3 h of annealing at 1100℃ was *** fractions characterized by non-stoichiometry phases and the block deviation *** annealing for 11 h improved the homogeneity and perfection in the *** average density of the etch pits dropped down significantly to 8×10^(6) cm^(-2).

关键词： gallium oxide epi-ready substrate etch pits crystal defect mosaic structure crystal perfection

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

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Journal of Semiconductors 2024年第8期45卷 74-80页

作者： Aleksei Almaev Alexander Tsymbalov Bogdan kushnarev vladimir nikolaev Alexei Pechnikov Mikhail Scheglov Andrei Chikiryaka Laboratory of Metal Oxide Semiconductors Research and Development Center for Advanced Technologies in MicroelectronicsNational Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia Department of Semiconductor Electronics and Physics of Semiconductors National University of Science and Technology MISISMoscow 119049Russia Perfect Crystals LLC Saint Petersburg 194223Russia

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital *** films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase *** spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 *** maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) ***.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 *** high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole ***α-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) *** a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

关键词： HVPE gallium oxide solar-blind ultraviolet detector self-powered mode

High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

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Journal of Semiconductors 2024年第4期45卷 56-62页

作者： Aleksei Almaev Alexander Tsymbalov Bogdan kushnarev vladimir nikolaev Alexei Pechnikov Mikhail Scheglov Andrei Chikiryaka Petr korusenko Research and Development Center for Advanced Technologies in Microelectronics National Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia Department of Semiconductor Electronics and Physics of Semiconductors National University of Science and Technology MISISMoscow 119049Russia Perfect Crystals LLC Saint Petersburg 194223Russia Department of Solid-State Electronics Saint Petersburg State UniversitySaint Petersburg 199034Russia Department of Physics Omsk State Technical UniversityOmsk 644050Russia

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in ***κ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire *** spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 *** maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 ***.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 *** enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet *** detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)*** responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,*** rise and decay times in self-powered mode did not exceed 100 ms.

关键词： κ(ε)-gallium oxide solar-blind shortwave ultraviolet radiation detectors self-powered operation mode

High-temperature annealing of (■01) β-Ga2O3 substrates for reducing structural defects after diamond sawing

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Journal of Semiconductors 2023年第12期 141-148页

作者： Pavel Butenko Michael Boiko Mikhail Sharkov Aleksei Almaev Aleksnder kitsay vladimir krymov Anton Zarichny vladimir nikolaev Ioffe Institute Tomsk State University

A commercial epi-ready(■01) β-Ga2O3wafer was investigated upon diamond sawing into pieces measuring 2.5 ×3 mm2. The defect structure and crystallinity in the cut samples has been studied by X-ray diffraction and a selective wet etching technique. The density of defects was estimated from the average value of etch pits calculated, including near-edge regions, and was obtained close to 109 cm-2. Blocks with lattice orientation deviated by angles of 1-3 arcmin, as well as non-stoichiometric fractions with a relative strain about(1.0-1.5) × 10-4in the [■01] direction, were found. Crystal perfection was shown to decrease significantly towards the cutting lines of the samples. To reduce the number of structural defects and increase the crystal perfection of the samples via increasing defect motion mobility, the thermal annealing was employed. Polygonization and formation of a mosaic structure coupled with dislocation wall appearance upon 3 h of annealing at 1100 °C was observed. The fractions characterized by non-stoichiometry phases and the block deviation disappeared. The annealing for 11 h improved the homogeneity and perfection in the crystals. The average density of the etch pits dropped down significantly to 8 × 106cm-2.

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Applicability of high-temperature cooling systems in different European countries from the view of the condensation risk

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Building Simulation 2021年第5期14卷 1453-1466页

作者： vladimir Zmrhal Martin Bartak Czech Technical University in Prague Faculty of Mechanical EngineeringDepartment of Environmental Engineering Technicka 416000 Prague 6Czech Republic

Due to the different approaches in determining the ventilation airflow rate per person for workspaces,where high-temperature air conditioning systems are used for air conditioning,problems with the condensation of water vapour on the cold surfaces of the system can *** article analyses the risk of condensation in various European cities using the available climatic *** with cooling ceilings and cooling beams with a ventilation device operating in parallel are taken into *** ventilation airflow rates per person were *** the example of a room equipped with high-temperature cooling,an energy simulation calculation is performed,which includes a ventilation and air-conditioning system with the possibility of capacity *** is clear from the results that the condensation of water vapour can be prevented by technical measures at the cost of reducing the cooling capacity,which can affect the achievement of the thermal comfort of those *** the end,suitable solutions are discussed,which should already be adopted at the time the device is designed so that the risk of condensation is not a major obstacle in the operation of these energy-efficient *** irreplaceable role in the operation of high-temperature cooling systems is played by a measurement and control system with a suitable algorithm to prevent condensation.

关键词： ventilation air-conditioning cooled ceilings chilled beams low energy cooling risk of condensation

Comparative Assessment of the Effect of Wastewater Sludge Biochar on Growth,Yield and Metal Bioaccumulation of Cherry Tomato

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Pedosphere 2015年第5期25卷 680-685页

作者： Mustafa k.HOSSAIN vladimir STREZOV Peter F.NELSON Department of Environmental Sciences Faculty of Science and EngineeringMacquarie University

To investigate the potential effects of wastewater sludge and sludge biochar on growth, yield and metal bioaccumulation of cherry tomato （Lycopersicon esculentum L.）, a pot experiment was carried out under greenhouse environment with three different treatments, control soil （CP）, soil with wastewater sludge （SS） and soil with sludge biochar （SB）, to reveal the comparative effect between the amendments of wastewater sludge and sludge biochar. The soil used for pot experiment was Chromosol. Wastewater sludge and sludge biochax produced through pyrolysis process at 550 ℃ were applied at 10 t ha-1. No significant difference was found in growth and production of cherry tomatoes between wastewater sludge and sludge biochar applications to the soil. The accumulation rates of metals in the fruits were lower in the treatment with sludge biochar than in the treatment with wastewater sludge. The study highlights the benefits of risk mitigation from toxic metal accumulation in fruits using wastewater sludge and sludge biochar as soil conditioners.

关键词： fruit yield heavy metals plant height risk mitigation soil conditioner

Incubation time fracture criterion for FEM simulations

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Acta Mechanica Sinica 2011年第4期27卷 541-549页

作者： vladimir Bratov Institute for Problem in Mechanical Engineering of the Russian Academy of Sciences Bolshoj pr.V.O.61199178St.-PetersburgRussia

The paper is discussing problems connected with embedment of the incubation time criterion for brittle fracture into finite element computational schemes. Incubation time fracture criterion is reviewed; practical questions of its numerical implementation are extensively discussed. Several examples of how the incubation time fracture criterion can be used as fracture condition in finite element computations are given. The examples include simulations of dynamic crack propagation and arrest, impact crater formation （i.e. fracture in initially intact media）, spall fracture in plates, propagation of cracks in pipelines. Applicability of the approach to model initiation, development and arrest of dynamic fracture is claimed.

关键词： Fracture dynamics Incubation time Crack dy-namics Finite element method Fracture arrest

Features of Electroplastic Effect in Alloys with Martensite Transformation

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Acta Metallurgica Sinica(English Letters) 2018年第12期31卷 1305-1310页

作者： vladimir Stolyarov Mechanical Engineering Research Institute RussianAcademy of SciencesM.Kharitonievsky4MoscowRussia 101990 National Research Nuclear University MEPhI MoscowRussia

Influence of different electric current modes （pulse and direct） on occurrence of the electroplastic effect under uniaxialtension in the coarse-grained alloys with martensite transformations is investigated. The materials are shape memoryTi49.3Niso.7 alloy and metastable austenite transformation-induced plasticity （TRIP） steel. The paper contains experimentalresults of current impact on the ＂stress-strain＂ curves of the material. It has been taken an experimental measurement ofthe sample temperature during the test. It is shown that the shape of a stress-strain curves and type of the serrate plasticflow, connected with the martensitic transformation and electroplastic effect, depend on the current modes. Impact of pulsecurrent and direct current suppresses shape memory and TRIP effect.

关键词： Electroplastic effect TRIP effect Pulse current Deformation Martensite transformation Tension

Thermoelectric and electrical characteristics of SmS ceramic samples after exposure to a pulsed magnetic field

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Journal of Rare Earths 2022年第11期40卷 1778-1784,I0004页

作者： Ivan Volchkov Evgeniy Baskakov vladimir Strelov vladimir kanevskii FSRC"Crystallography and Photonics"RAS Leninskiy Prospekt 59119333MoscowRussia

Samarium monosulfide(SmS)is a promising material for creating thermoelectric generators(TEG),gas sensors and strain *** the high values of the generated thermo electromotive force(TEMF)(α≈170-350μV/k),methods for increasing the efficiency of TEGs based on SmS are of considerable *** of these methods can be short-term effects of magnetic fields,including pulsed ones,on these *** action of a pulsed magnetic field(PMF)leading to an increase in TEMF(U)of SmS ceramic samples is *** that are not subjected to high frequency currents(HFC)annealing show an increase in UT of 44.54%-62.18%(from 11.9 to 17.2-19.3 mV).The conductivity(σ)of the samples is~22 Q/cm and is insensitive to short-term exposure to a *** that undergo HFC annealing show an increase in Uof 23.47%-41.31%(from 21.3 to 26.3-30.1 mV)after exposure to a *** conductivity of the samples is~15Ω^(-1)/cm and after a short exposure to the PMF is changing nonmo notonically,with an increase in the overall *** difference in the values of Uand a can be explained by presence of an ordered grain structure and a significant amount of the Sm_(2)O_(2)S phase in the samples subjected to HFC *** mechanisms of the observed changes are discussed.

关键词： Rare earths Thermoelectric Electric properties Magnetically induced changes Samarium monosulfide