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COMPa.T DIFFERENCE SCHEMES FOR THE DIFFUSION a.D SCHRODINGER EQUa.IONS. a.PROXIMa.ION, STa.ILITY, CONVERGENCE, EFFECTIVENESS, MONOTONY

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Journa. of Computa.iona. Ma.hema.ics 2014年第3期32卷 348-370页

作者： vladimir a. gordin eugeny a. tsymbalov Na.iona. Resea.ch University Higher School of Economics Hydrometeorological Center of Russia Moscow 123242 Russia

Va.ious compa.t difference schemes （both old a.d new, explicit a.d implicit, one-level a.d two-level）, which a.proxima.e the diffusion equa.ion a.d SchrSdinger equa.ion with periodica. bounda.y conditions a.e constructed by mea.s of the genera. a.proa.h. The results of numerica. experiments for va.ious initia. da.a.a.d right ha.d side a.e presented. We eva.ua.e the rea. order of their convergence, a. well a. their sta.ility, effectiveness, a.d va.ious kinds of monotony. The optima. Coura.t number depends on the number of grid knots a.d on the smoothness of solutions. The competition of va.ious schemes should be orga.ized for the fixed number of a.ithmetic opera.ions, which a.e necessa.y for numerica. integra.ion of a.given Ca.chy problem. This a.proa.h to the construction of compa.t schemes ca. be developed for numerica. solution of va.ious problems of ma.hema.ica. physics.

关键词： Compa.t schemes Pa.rs of test functions Coura.t number Two-level scheme,Order of convergence Effectiveness Monotony.

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High-speed performa.ce self-powered short wa.e ultra.iolet ra.ia.ion detectors ba.ed onκ(ε)-Ga.(2)O_(3)

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Journa. of Semiconductors 2024年第4期45卷 56-62页

作者： a.eksei a.ma.v a.exa.der tsymbalov Bogda. Kushna.ev vladimir Nikola.v a.exei Pechnikov Mikha.l Scheglov a.drei Chikirya.a.Petr Korusenko Resea.ch a.d Development Center for a.va.ced Technologies in Microelectronics National Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia Depa.tment of Semiconductor Electronics a.d Physics of Semiconductors National University of Science and Technology MISISMoscow 119049Russia Perfect Crysta.s LLC Saint Petersburg 194223Russia Depa.tment of Solid-Sta.e Electronics Saint Petersburg State UniversitySaint Petersburg 199034Russia Depa.tment of Physics Omsk State Technical UniversityOmsk 644050Russia

High-speed sola.-blind short wa.elength ultra.iolet ra.ia.ion detectors ba.ed onκ(ε)-Ga.(2)O_(3)la.ers with Pt conta.ts were demonstra.ed a.d their properties were studied in ***κ(ε)-Ga.(2)O_(3)la.ers were deposited by the ha.ide va.or pha.e epita.y on pa.terned Ga. templa.es with sa.phire *** spectra. dependencies of the photoelectric properties of struc-tures were a.a.yzed in the wa.elength interva. 200-370 *** ma.imum photo to da.k current ra.io,responsivity,detectiv-ity a.d externa. qua.tum efficiency of structures were determined a.:180.86 ***.,3.57 a.W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) a.d 2193.6%,respectively,a. a.wa.elength of 200 nm a.d a. a.plied volta.e of 1 *** enha.cement of the photoresponse wa. ca.sed by the decrea.e in the Schottky ba.rier a. the Pt/κ(ε)-Ga.(2)O_(3)interfa.e under ultra.iolet *** detectors demon-stra.ed could functiona.ize in self-powered mode due to built-in electric field a. the Pt/κ(ε)-Ga.(2)O_(3)*** responsivity a.d externa. qua.tum efficiency of the structures a. a.wa.elength of 254 nm a.d zero a.plied volta.e were 0.9 ma.W a.d 0.46%,*** rise a.d deca. times in self-powered mode did not exceed 100 ms.

关键词： κ(ε)-ga.lium oxide sola.-blind shortwa.e ultra.iolet ra.ia.ion detectors self-powered opera.ion mode

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Self-powered UVC detectors ba.ed on α-Ga.(2)O_(3) with encha.ted speed performa.ce

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Journa. of Semiconductors 2024年第8期45卷 74-80页

作者： a.eksei a.ma.v a.exa.der tsymbalov Bogda. Kushna.ev vladimir Nikola.v a.exei Pechnikov Mikha.l Scheglov a.drei Chikirya.a La.ora.ory of Meta. Oxide Semiconductors Research and Development Center for Advanced Technologies in MicroelectronicsNational Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia Depa.tment of Semiconductor Electronics a.d Physics of Semiconductors National University of Science and Technology MISISMoscow 119049Russia Perfect Crysta.s LLC Saint Petersburg 194223Russia

Detectors were developed for detecting irra.ia.ion in the short-wa.elength ultra.iolet(UVC)interva. using high-qua.ity single-crysta.lineα-Ga.(2)O_(3) films with Pt interdigita. *** films ofα-Ga.(2)O_(3) were grown on pla.a. sa.phire substra.es with c-pla.e orienta.ion using ha.ide va.or pha.e *** spectra. dependencies of the photo to da.k current ra.io,responsivity,externa. qua.tum efficiency a.d detectivity of the structures were investiga.ed in the wa.elength interva. of 200−370 *** ma.imum of photo to da.k current ra.io,responsivity,externa. qua.tum efficiency,a.d detectivity of the structures were 1.16×10^(4) ***.,30.6 a.W,1.65×10^(4)%,a.d 6.95×10^(15) Hz^(0.5)·cm/W a. a.wa.elength of 230 nm a.d a. a.plied volta.e of 1 *** high va.ues of photoelectric properties were due to the interna. enha.cement of the photoresponse a.socia.ed with strong hole ***α-Ga.(2)O_(3) film-ba.ed UVC detectors ca. function in self-powered opera.ion mode due to the built-in electric field a. the Pt/α-Ga.(2)O_(3) *** a.wa.elength of 254 nm a.d zero a.plied volta.e,the structures exhibit a.responsivity of 0.13 ma.W a.d a. externa. qua.tum efficiency of 6.2×10^(−2)%.The UVC detectors ba.ed on theα-Ga.(2)O_(3) films demonstra.e high-speed performa.ce with a.rise time of 18 ms in self-powered mode.

关键词： HVPE ga.lium oxide sola.-blind ultra.iolet detector self-powered mode

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