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Estimation of TBR on the Gap Between Neighboring Blanket Modules in the DEMO Reactor

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Plasma Science and Technology 2013年第2期15卷 171-174页

作者： Youji someya Kenji TOBITA Japan Atomic Energy Agency Rokkasyo-mura Kamikita-gun Aomori 039-3212 Japan

When one wants to simply estimate tritium breeding ratio （TBR）, the TBR may be reduced from a ＂local＂ TBR for the breeding zones of a blanket module by multiplying the breeder coverage （= the surface area of effective breeding region / the surface area of the first wall around plasma）. When blanket modules are arranged~ the gap between neighboring modules and the frames of the modules are regarded as nombreeding zones. On the other hand, neutrons scattered in the non-breeding zones can enter breeding zones, contributing to tritium production. This means that the estimation method mentioned above tends to underestimate TBR. In order to assess the scattering effect quantitatively, we carried out a three-dimensional Monte Carlo N-particle transport MCNP-5 calculation. It was found from the calculation that there is little decrease in TBR for gaps less than 4 cm when the blanket thickness is 70 cm. The result indicates that such a wide allowance of the gap will facilitate access of remote handling equipment for the replacement of blanket modules and improve access of diagnostics.

关键词： blanket tritium breeding ratio neutron scattering MCNP

Pt／Au Schottky Contacts to Modulation—Doped AlxGa1—xN／GaN Heterostructures Using Pre—deposition Surface Treatment

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Chinese Physics Letters 2002年第12期19卷 1853-1855页

作者：刘杰 T.someya 等 NationalLaboratoryofSolidStateMicrostructuresandDepartmentofPhysics NanjingUniversityNanjing210093 ResearchCenterforAdvancedScienceandTechnologyandInstituteofIndustrialScience

Pt/Au Schottky contacts were fabricated on modulation-doped Al0.22GaN0.78/GaN heterostructures. Some different pre-deposition surface treatments were used to prevent the formation of the native oxide layer on the Al0.22GaN0.78 surface. X-ray photoelectron spectroscopy measurements indicate that the pre-deposition surface treatment with boiling (NH4)2S solution can remove the native oxide layer on the Al0.22Ga0.78N surface effectively. The highest Schottky barrier height of 1.13eV was obtained on the (NH4)2S-treated Al0.22GaN0.78/GaN heterostructure.

关键词： Modulation

Polarization—Induced Charges in Modulation—Doped AlxGa1—xN／GaN Heterostructures Through Capacitance—Voltage Profiling

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Chinese Physics Letters 2002年第8期19卷 1172-1175页

作者：周玉刚 T.someya 等 NationalLaboratoryofSolidStateMicrostructuresandDepartmentofPhysics NanjingUniversityNanjing210093 ResearchCenterforAdvancedScienceandTechnologyandInstituteofIndustrialScience

Polarization-induced charges in modulation-doped Al0.22Ga0.78N/GaN heterostructures were investigated by the capacitance-voltage (C-V) method. The C-V profile of the Pt/Al0.22Ga0.78N/GaN Schottky diodes with various Al0.22Ga0.78N thicknesses shows significant differences due to change of the polarization field in the heterostructures. A numerical simulation based on the experimental results indicates that the sheet density of the polarization-induced charges at the heterointerface is 6.78×1012cm-2 in the samples with the Al0.22Ga0.78N thicknesses of 30nm or 45nm. The charge density reduces to 1.30×1012cm-2 in the sample with the Al0.22Ga0.78N thickness of 75nm. It is thought that the reduction of the polarization-induced charges at the heterointerface is due to the partial relaxation of the Al0.22Ga0.78N layer on GaN. This work provides a technique for quantitative characterization of the polarization-induced charges in AlxGa1-xN/GaN heterostructures.

关键词： Polarization-Induced Charges Modulation-Doped Al_xGa_(1-x)N/GaN Heterostructures Capacitance-Voltage Profiling

Survival of pathogenic bacteria in compost with special reference to Escherichia coli

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Journal of Environmental Sciences 2005年第5期17卷 770-774页

作者： GONG Chun-ming Koichi Inoue Shunji Inanaga Takashi someya Laboratory of Soil Microbiology Faculty of Agriculture Saga University Saga 840-8502 Japan The United Graduate School of Agricultural Sciences Kagoshima University Kagoshima 890-0065 Japan

Application of compost in agricultural practice could potentially cause contamination of foodstuffs with pathogenic bacteria such as Escherichia coli O157：H7 （E. Coli O157）. We investigated pathogenic bacteria in compost collected from the compost facilities, and evaluated the survival of E. coli K12 and O157 in laboratory experiments. Out of 19 compost product samples, coliform bacteria and salmonella were detected in 7 and 3 samples respectively. The number of coliform bacteria was 1.8 × 10^2 to 2.5 × 10^6 CFU/g dw and that of salmonella was 4.2 × 10^1 to 6.0 × 10^3 CFU/g dw. Moreover. coliform bacteria, fecal coliform, E. coli and salmonella were detected during composting at 54℃ to 67℃. The results indicated that moisture content was a very important factor to the heat sensitivity of pathogenic bacteria in compost, E. coli in compost of high moisture content was more sensitive than that in compost of low moisture content, cells harvested in logarithmic phase was more sensitive than these in stationary phase, and E. coli K12 was more sensitive than E. coli O157. Based on the D values, the lethal time of E. coli K12 and 0157 from 10^8 to 10^0 CFU/g dw were 16.3 and 28.8 min, respectively, at 60℃ in compost with 40% moisture content. However, some E. coli cells survived in composting process at 54℃ to 67℃. Water potential（low moisture content） and physiological aspects of bacteria（stationary phase） could explain only in part of the prolonged survival of E. coli in compost, and there should be some other factors that are conducive to bacterial survial in compost.

关键词： survival pathogenic bacteria compost Escherichia coil moisture

Recent progress in solution-processed flexible organic photovoltaics

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npj Flexible Electronics 2022年第1期6卷 871-884页

作者： Lulu Sun Kenjiro Fukuda Takao someya Thin-Film Device Laboratory RIKEN2-1 HirosawaWakoSaitama 351-0198Japan Center for Emergent Matter Science(CEMS) RIKEN2-1 HirosawaWakoSaitama 351-0198Japan Department of Electrical Engineering and Information Systems School of EngineeringThe University of Tokyo7-3-1 HongoBunkyo-kuTokyo 113-8656Japan

The certified power conversion efficiency(PCE)of organic photovoltaics(OPV)fabricated in laboratories has improved dramatically to over 19%owing to the rapid development of narrow-bandgap small-molecule acceptors and wide bandgap polymer donor *** next pivotal question is how to translate small-area laboratory devices into large-scale commercial *** requires the OPV to be solution-processed and flexible to satisfy the requirements of high-throughput and large-scale production such as roll-to-roll *** review summarizes and analyzes recent progress in solution-processed flexible *** a detailed discussion from the perspective of the behavior of the narrow bandgap small-molecule acceptor and wide bandgap polymer donor active layer in solution-processed flexible devices,the existing challenges and future directions are discussed.

关键词： donor narrow translate

Growth and Characterization of Modulation-Doped Al_(x)Ga_(1-x)N/GaN Heterostructures

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Chinese Physics Letters 2001年第1期18卷 129-131页

作者： SHEN Bo ZHANG Rong SHI Yi ZHENG You-Dou T.someya Y.Arakawa National Laboratory of Solid State Microstructures and Department of Physics Nanjing UniversityNanjing 210093 Research Center for Advanced Science and Technology and Institute of Industrial ScienceUniversity of Tokyo4-6-1 KomabaMeguro-kuTokyo 153-8904Japan

The modulation-doped Al_(0.22)Ga_(0.78)N/GaN heterostructures with different Al_(0.22)Ga_(0.78)N barrier thicknesses were grown by means of metal--organic chemical vapour *** Al_(0.22)Ga_(0.78)N layer still has pseudomorphic growth when its thickness is *** mobility of the two-dimensional electron gas(2DEG)at the heterointerfaces is much higher than that of the electrons in GaN films at both 300 and *** dramatic decrease of the 2DEG mobility in an Al_(0.22)Ga_(0.78)N/GaN heterostructure corresponds to the partial relaxation of the Al_(0.22)Ga_(0.78)N barrier.

关键词： N/Ga deposition mobility

Pentacene thin film transistor with low threshold voltage and high mobility by inserting a thin metal phthalocyanines interlayer

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Science China(Technological Sciences) 2012年第2期55卷 417-420页

作者： LI Yi LIU Qi WANG XiZhang SEKITANI Tsuyoshi someya Takao HU Zheng Key Laboratory of Mesoscopic Chemistry of MOE School of Chemistry and Chemical EngineeringNanjing UniversityNanjing 210093China Department of Applied Physics Tokyo University7-3-1 HongoBunkyo-kuTokyo 113-8656Japan

We herein report the effective performance enhancement of the pentacene-based organic thin film transistors with silicon di- oxide dielectric by inserting a thin metal phthalocyanines interlayer between Au source/drain electrodes and the pentacene active layer. The threshold voltage decreased remarkably from ca. -20 V to a few volts （below -7.6 V） while the mobility in- creased 1.5-3 times after the insertion of the interlayer of only ca. 2 nm, which could be attributed to the reduction of the car- tier injection barrier. The results suggest a simple and effective way to achieve low-threshold-voltage pentacene-based organic thin film transistors with high mobility on silicon dioxide dielectric.

关键词： low threshold voltage and high mobility pentacene-based organic thin film transistors metal phthalocyanines interlayer

Eustachian tube involvement in a patient with relapsing polychondritis detected by magnetic resonance imaging:A case report

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World Journal of Clinical Cases 2022年第4期10卷 1441-1446页

作者： Daisuke Yunaiyama Akiko Aoki Hiroshi Kobayashi Miwako someya Mitsuru Okubo Kazuhiro Saito Department of Radiology Tokyo Medical University HospitalShinjuku-ku 160-0023TokyoJapan Department of Radiology Tokyo Medical University Hachioji Medical CenterHachioji-shi 193-0998Japan Department of Rheumatology Tokyo Medical University Hachioji Medical CenterHachioji-shi 193-0998Japan Department of Otorhinolaryngology Head and Neck SurgeryTokyo Medical University Hachioji Medical CenterHachioji-shi 193-0998Japan

BACKGROUND Relapsing polychondritis(RP)is a rare inflammatory disease involving the systemic cartilage,such as the auricle,trachea,and bronchiole,among others.A patient with RP shows variable symptoms based on the involved *** SUMMARY A 72-year-old Japanese woman with a history of redness of the bilateral auricles for 3 d was referred to a *** clinician prescribed antibiotics to the patient;however,the symptoms worsened;thus,she was referred to our *** and neck magnetic resonance imaging(MRI)showed edematous auricle with remarkable contrast,fluid collection in the bilateral mastoid cells,suggesting otitis *** eustachian tube(ET)on the right side was also edematous with contrast *** patient was suspected of RP according to the diagnostic criteria.A biopsy of the auricular cartilage was performed by an otorhinolaryngologist,confirming pathological proof of *** with steroids were immediately administered *** We highlight a rare case of RP with radiologically confirmed involvement of ET in the MRI.

关键词： Relapsing polychondritis Magnetic resonance imaging Contrast enhancement Otitis media with effusion Eustachian tube Case report

270 nm ultra-thin self-adhesive conformable and long-term airstable complimentary organic transistors and amplifiers

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npj Flexible Electronics 2023年第1期7卷 165-176页

作者： Mohammad Javad Mirshojaeian Hosseini Yi Yang Walter Kruger Tomoyuki Yokota Sunghoon Lee Takao someya Robert A.Nawrocki School of Engineering Technology Purdue University401 S Grant StWest LafayetteIN 47906USA Department of Electrical Engineering and Information Systems School of EngineeringThe University of Tokyo7-3-1 Hongo Bunkyo-kuTokyo 113-8656Japan

Lightweight,flexible,and conformal bioelectronics are essential for wearable *** paper introduces 270 nm thin organic electronics amplifying circuits that are self-adhesive,skin conformal,and long-term *** report studies the effect of total device thickness,namely 3μm and 270 nm devices,on the characterization of organic devices before and after buckling,the longevity of organic field-effect transistors(OFETs)over 5 years,and the lamination of OFETs on the human skin.A single-stage organic complementary inverter and a pseudo-complementary amplifier are fabricated to compare their electrical characteristics,with amplification gains of 10 and 64,***,the study demonstrates a five-stage organic complementary inverter can successfully amplify artificial electromyogram and electrocardiogram signals with gains of 1000 and 1088,respectively.

关键词： transistors amplifier complementary