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Use of the epitaxial MTBs as a 1D gate(Lg=0.4 nm)for the construction of scaling down two-dimensional field-effect transistors

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Journal of Semiconductors 2024年第10期45卷 1-2页

作者： Youla Yang Daixuan Wu He tian tian-ling ren School of Integrated Circuit Tsinghua UniversityBeijing 100083China School of Instrument Science and Technology Xi'an Jiaotong UniversityXi'an 710049China

In recent years,there has been a significant increase in research focused on the growth of large-area single *** et al.[1]recently achieved the growth of large-area monolayers of transition-metal chalcogenides through assisted *** quality of molecular beam epitaxy(MBE)-grown two-dimensional(2D)materials can be greatly enhanced by using sacrificial species deposited simultaneously from an electron beam evaporator during the growth *** technique notably boosts the nucleation rate of the target epitaxial layer,resulting in large,homogeneous monolayers with improved quasiparticle lifetimes and fostering the development of epitaxial van der Waals ***,micrometer-sized silver films have been formed at the air-water interface by directly depositing electrospray-generated silver ions onto an aqueous dispersion of reduced graphene oxide under ambient conditions[2].

关键词： silver epitaxial dimensional

Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors

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Tsinghua Science and Technology 2021年第5期26卷 574-591页

作者： Zhaoyi Yan Guangyang Gou Jie ren Fan Wu Yang Shen He tian Yi Yang tian-ling ren the Institute of Microelectronics Tsinghua UniversityBeijing 100084China the Institute of Microelectronics and Tsinghua National Laboratory for Information Science and TechnologyTsinghua UniversityBeijing 100084China

Three main ambipolar compact models for Two-Dimensional(2D)materials based Field-Effect Transistors(2D-FETs)are reviewed:(1)Landauer model,(2)2D Pao-Sah model,and(3)virtual Source Emission-Diffusion(VSED)*** the Landauer model,the Gauss quadrature method is applied,and it summarizes all kinds of variants,exhibiting its *** the 2D Pao-Sah model,the aspects of its theoretical fundamentals are rederived,and the electrostatic potentials of electrons and holes are clarified.A brief development history is compiled for the VSED *** summary,the Landauer model is naturally appropriate for the ballistic transport of short channels,and the 2D Pao-Sah model is applicable to long-channel *** contrast,the VSED model offers a smooth transition between ultimate *** three models cover a fairly completed channel length range,which enables researchers to choose the appropriate compact model for their works.

关键词： Field-Effect Transistor(FET) compact model ambipolar transport Landauer formula Pao-Sah model virtual source

Filling the gap: thermal properties and device applications of graphene

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Science China(Information Sciences) 2021年第4期64卷 103-119页

作者： Rui WU Rui-Zhi ZHU Shi-Hui ZHAO Gang ZHANG He tian tian-ling ren Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Institute of High Performance Computing A*STAR

With the miniaturization and integration of electronic devices, the heat dissipation problems caused by higher power density are getting more serious, limiting the development of integrated circuits industry. Graphene, as a representative of two-dimensional materials, has attracted extensive attention for its excellent thermal properties. Ever since it has been discovered, researches have been carried out and achievements have been made both theoretically and practically. Here, we review the established theories and simulation system for 2D heat conduction, different measurement methods for thermal conductivity and graphene’s device applications. We propose two gaps between different scales and between theoretical prediction and practical effect. Owing to the higher heat dissipation requirements and the endless pursuit of better thermal performance, it is challenging but critical to continue studying and further understand the thermal properties of graphene. Challenges and opportunities are both emphasized. It is hoped that the diversification and progress in morphology and manufacturing technology can bring new development and that graphene can eventually be widely used and make huge changes to micoelectronic industry.

关键词： graphene thermal properties device application thermal conductivity 2D material

Recent progress in single crystal perovskite X-ray detectors

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Science China(Information Sciences) 2024年第3期67卷 5-19页

作者： Xiao LIU Jun ren Yu-Ang CHEN Xiangshun GENG Dan XIE tian-ling ren Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated CircuitsTsinghua University

Perovskites have attracted extensive attention as radiation detection material due to their long carrier diffusion length and lifetime, high absorption coefficient, and flexible manufacturing process. Compared with polycrystalline structures, single crystal perovskites improve the performance of optoelectronic devices due to their low defect state density, better photoelectric characteristics, and chemical ***, we review the recent progress of single crystal perovskite X-ray detectors. First, we briefly introduced the basic concepts, detection mechanisms, figure of merits of perovskite X-ray detectors, and the preparation methods of single crystal perovskites. Then, we summarized the significant advancements in single crystal perovskite X-ray detectors in recent times. Finally, we discussed the critical challenges and some practicable solutions for developing high-performance X-ray detectors.

关键词： single crystal perovskites carrier transport radiation detection X-ray detectors X-ray imaging

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Magnetoresistive behavior and magnetization reversal of NiFe/Cu/CoFe/IrMn spin valve GMRs in nanoscale

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International Journal of Minerals,Metallurgy and Materials 2013年第7期20卷 700-704页

作者： Cong Yin Ze Jia Wei-chao Ma tian-ling ren Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology Tsinghua University

The magnetoresistance behavior and the magnetization reversal mode of NiFe/Cu/CoFe/IrMn spin valve giant magnetoresistance （SV-GMR） in nanoscale were investigated experimentally and theoretically by nanosized magnetic simulation methods. Based on the Landau-Lifshitz-Gilbert equation, a model with a special gridding was proposed to calculate the giant magnetoresistance ratio （MR） and investigate the magnetization reversal mode. The relationship between MR and the external magnetic field was obtained and analyzed. Studies into the variation of the magnetization distribution reveal that the magnetization reversal mode, that is, the jump variation mode for NiFe/Cu/CoFe/IrMn, depends greatly on the antiferromagnetic coupling behavior between the pinned layer and the antiferromagnetic layer. It is also found that the switching field is almost linear with the exchange coefficient.

关键词： giant magnetoresistance (GMR) spin valves nanoscale magnetization reversal

Operation of silicon-germanium heterojunction bipolar transistors with different structures at deep cryogenic temperature

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Science Bulletin 2019年第7期64卷 469-477页

作者： Guofang Yu renrong Liang Xiawa Wang Jun Xu tian-ling ren Institute of Microelectronics Tsinghua University Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University

In this work, the device performances of discrete and integrated SiGe heterojunction bipolar transistors(HBTs) with different device structures from 300 to 4.8 K were investigated. The turn-on voltages of baseemitter and base-collector junctions increased non-linearly with temperature cooled to 4.8 K. Energy bandgap engineering was taken into account for the analytical model of the turn-on voltage versus temperature. Incomplete ionization occurred in the base-collector junction because of the low doping concentration. The trap-assisted tunneling current in the forward base current was clearly observed below20 K. The ideality factor and saturation current were shown to be temperature dependence. The ideality factor was much larger than 2 below 40 K, indicating that the current is not only contributed by drift, diffusion and recombination, but also by tunneling. The peak current gain of the discrete SiGe HBTs achieved the maximum value of 3,388 at 80 K, while that of the integrated was 546 at 140 K. The transconductance in logarithm was linearly dependent on reciprocal temperature above 50 K, but flattened below 50 *** effect was evidently observed below 77 K in the fixed base current output characteristics of the discrete SiGe HBTs, and it was not obvious for the integrated SiGe HBTs.

关键词： SiGe HBTs Quantum computing Cryogenic temperature Analytical model

The Use of Graphene-Based Earphones in Wireless Communication

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Tsinghua Science and Technology 2015年第3期20卷 270-276页

作者： Luqi Tao Song Jiang Cheng Li He tian Ningqin Deng Danyang Wang Yi Yang tian-ling ren Institute of Microelectronics Tsinghua University both the Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology Tsinghua University

Graphene-based materials have attracted much attention in recent years. Many researchers have demonstrated prototypes using graphene-based materials, but few specific applications have appeared. Graphene- based acoustic devices have become a popular topic. This paper describes a novel method to fabricate graphene- based earphones by laser scribing. The earphones have been used in wireless communication systems. A wireless communication system was built based on an ARM board. Voice from a mobile phone was transmitted to a graphene-based earphone. The output sound had a similar wave envelope to that of the input; some differences were introduced by the DC bias added to the driving circuit of the graphene-based earphone. The graphene-based earphone was demonstrated to have a great potential in wireless communication.

关键词： graphene earphone ARM communication

Carbon Nanotube Transistor with Short-Term Memory

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Tsinghua Science and Technology 2016年第4期21卷 442-448页

作者： Changqing Yin Yuxing Li Jiabin Wang Xuefeng Wang Yi Yang tian-ling ren Institute of Microelectronics Tsinghua University Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology Tsinghua University

Short-Term Memory （STM） is a primary capability of the human brain. Humans use STM to remember a small amount of information, like someone＇s phone number, for a short period of time. Usually the duration of STM is less than 1 minute. Synapses, the connections between neurons, are of vital importance to memory in biological brains. For mimicking the memory function of synapses, Carbon Nanotube （CNT） networks based thin- film transistors with Electric Double Layers （EDL） at the dielectric/channel interface were researched in this work. A response characteristic of pre-synaptic potential pulses on the gate electrode of this CNT synaptic transistor was shown remarkably similar to Excitatory Post-Synaptic Current （EPSC） of biological synapses. Also a multi-level modulatable STM of CNT synaptic transistors was investigated. Post-synaptic current was shown with tunable peak values, on-off ratio, and relaxation time.

关键词： carbon nanotube thin-film transistor synapse excitatory postsynaptic current short-term memory

Au-decorated porous structure graphene with enhanced sensing performance for low-concentration NO2 detection

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Rare Metals 2020年第6期39卷 651-658页

作者： Yan-Yan Fan Hai-ling Tu Yu Pang Feng Wei Hong-Bin Zhao Yi Yang tian-ling ren State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing 100088China GRIMAT Engineering Institute Co. LtdBeijing 101407China Institute of Microelectronics Tsinghua UniversityBeijing 100084China General Research Institute for Nonferrous Metals Beijing 100088China Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100088China

A recent progress in new emerging two-dimensional(2 D)materials has provided promising opportunity for gas sensing in ultra-low detectable *** this work,we have demonstrated a flexible NO2 gas sensor with porous structure graphene on polyethylene terephthalate substrates operating at room *** gas sensor exhibited good performance with response of 1.2%and a fast response time within 30 s after exposure to50×10^-9 NO2 *** porous structure of graphene increased the surface area,the sensor showed high sensitivity of ppb level for NO2 *** nanoparticles were decorated on the surface of the porous structure graphene skeleton,resulting in an incensement of response compared with pristine *** nanoparticles-decorated graphene exhibits not only better sensitivity(1.5-1.6 times larger than pristine graphene)for NO2 gas detection,but also fast *** sensor was found to be robust and sensitive under the cycling bending test,which could also be ascribed to the merits of *** porous structure graphene-based gas sensor is expected to enable a simple and inexpensive flexible gas sensing platform.

关键词： Graphene Au nanoparticles Porous structure Gas sensor Nitrogen dioxide(NO2)