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Use of the epitaxial MTBs as a 1D gate(Lg=0.4 nm)for the construction of scaling down two-dimensional field-effect transistors

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Journal of Semiconductors 2024年第10期45卷 1-2页

作者： Youla Yang Daixuan Wu He tian tian-ling ren School of Integrated Circuit Tsinghua UniversityBeijing 100083China School of Instrument Science and Technology Xi'an Jiaotong UniversityXi'an 710049China

In recent years,there has been a significant increase in research focused on the growth of large-area single *** et al.[1]recently achieved the growth of large-area monolayers of transition-metal chalcogenides through assisted *** quality of molecular beam epitaxy(MBE)-grown two-dimensional(2D)materials can be greatly enhanced by using sacrificial species deposited simultaneously from an electron beam evaporator during the growth *** technique notably boosts the nucleation rate of the target epitaxial layer,resulting in large,homogeneous monolayers with improved quasiparticle lifetimes and fostering the development of epitaxial van der Waals ***,micrometer-sized silver films have been formed at the air-water interface by directly depositing electrospray-generated silver ions onto an aqueous dispersion of reduced graphene oxide under ambient conditions[2].

关键词： silver epitaxial dimensional

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

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Nano-Micro Letters 2024年第12期16卷 134-188页

作者： Jing Chen Ming-Yuan Sun Zhen-Hua Wang Zheng Zhang Kai Zhang Shuai Wang Yu Zhang Xiaoming Wu tian-ling ren Hong Liu Lin Han Institute of Marine Science and Technology Shandong UniversityQingdao 266237ShandongPeople’s Republic of China School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China BNRist Tsinghua UniversityBeijing 100084People’s Republic of China State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100ShandongPeople’s Republic of China Shenzhen Research Institute of Shandong University Shenzhen 518057People’s Republic of China Shandong Engineering Research Center of Biomarker and Artificial Intelligence Application Jinan 250100People’s Republic of China

Two-dimensional(2D)transition metal dichalcogenides(TMDs)allow for atomic-scale manipulation,challenging the conventional limitations of semiconductor *** capability may overcome the short-channel effect,sparking significant advancements in electronic devices that utilize 2D *** the dimension and performance limits of transistors based on 2D TMDs has gained substantial *** review provides a comprehensive investigation into these limits of the single 2D-TMD *** delves into the impacts of miniaturization,including the reduction of channel length,gate length,source/drain contact length,and dielectric thickness on transistor operation and *** addition,this review provides a detailed analysis of performance parameters such as source/drain contact resistance,subthreshold swing,hysteresis loop,carrier mobility,on/off ratio,and the development of p-type and single logic *** review details the two logical expressions of the single 2D-TMD logic transistor,including current and *** also emphasizes the role of 2D TMD-based transistors as memory devices,focusing on enhancing memory operation speed,endurance,data retention,and extinction ratio,as well as reducing energy consumption in memory devices functioning as artificial *** review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic *** review not only summarizes the current state of the art in this field but also highlights potential future research directions and *** underscores the anticipated challenges,opportunities,and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

关键词： Two-dimensional transistors Dimension limits Performance limits Memory devices Artificial synapses

Observation of stabilized negative capacitance effect in hafnium-based ferroic films

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Materials Futures 2024年第1期3卷 1-9页

作者： Leilei Qiao Ruiting Zhao Cheng Song Yongjian Zhou Qian Wang tian-ling ren Feng Pan Key Laboratory of Advanced Materials(MOE) School of Materials Science and EngineeringTsinghua UniversityBeijing 100084People’s Republic of China Institute of Microelectronics&Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China

A negative capacitance(NC)effect has been proposed as a critical pathway to overcome the‘Boltzmann tyranny’of electrons,achieve the steep slope operation of transistors and reduce the power dissipation of current semiconductor *** particular,the ferroic property in hafnium-based films with fluorite structure provides an opportunity for the application of the NC effect in electronic ***,to date,only a transient NC effect has been confirmed in hafnium-based ferroic materials,which is usually accompanied by hysteresis and is detrimental to low-power transistor *** stabilized NC effect enables hysteresis-free and low-power transistors but is difficult to observe and demonstrate in hafnium-based *** difficulty is closely related to the polycrystalline and multi-phase structure of hafnium-based films fabricated by atomic layer deposition or chemical solution ***,we prepare epitaxial ferroelectric Hf_(0.5)Zr_(0.5)O_(2) and antiferroelectric ZrO_(2) films with single-phase structure and observe the capacitance enhancement effect of Hf_(0.5)Zr_(0.5)O_(2)/Al_(2)O_(3) and ZrO_(2)/Al_(2)O_(3) capacitors compared to that of the isolated Al_(2)O_(3) capacitor,verifying the stabilized NC *** capacitance of Hf_(0.5)Zr_(0.5)O_(2) and ZrO_(2) is evaluated as−17.41 and−27.64 pF,*** observation of the stabilized NC effect in hafnium-based films sheds light on NC studies and paves the way for low-power transistors.

关键词： negative capacitance effect fluorite structure hafnium-based ferroelectrics antiferroelectric

The Roadmap of 2D Materials and Devices Toward Chips

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Nano-Micro Letters 2024年第6期16卷 343-438页

作者： Anhan Liu Xiaowei Zhang Ziyu Liu Yuning Li Xueyang Peng Xin Li Yue Qin Chen Hu Yanqing Qiu Han Jiang Yang Wang Yifan Li Jun Tang Jun Liu Hao Guo Tao Deng Songang Peng He tian tian‑ling ren School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100049People’s Republic of China School of Microelectronics Fudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of Dynamic Measurement Technology Shanxi Province Key Laboratory of Quantum Sensing and Precision MeasurementNorth University of ChinaTaiyuan 030051People’s Republic of China High‑Frequency High‑Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029People’s Republic of China School of Electronic and Information Engineering Beijing Jiaotong UniversityBeijing 100044People’s Republic of China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049People’s Republic of China IMECAS-HKUST-Joint Laboratory of Microelectronics Beijing 100029People’s Republic of China

Due to the constraints imposed by physical effects and performance degra certain limitations in sustaining the advancement of Moore’s ***-dimensional(2D)materials have emerged as highly promising candidates for the post-Moore era,offering significant potential in domains such as integrated circuits and next-generation ***,in this review,the progress of 2D semiconductors in process engineering and various electronic applications are summarized.A careful introduction of material synthesis,transistor engineering focused on device configuration,dielectric engineering,contact engineering,and material integration are given *** 2D transistors for certain electronic applications including digital and analog circuits,heterogeneous integration chips,and sensing circuits are ***,several promising applications(artificial intelligence chips and quantum chips)based on specific mechanism devices are ***,the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed,and potential development pathways or roadmaps are further speculated and outlooked.

关键词： Two-dimensional materials Roadmap Integrated circuits Post-Moore era

A Better Zn-Ion Storage Device:Recent Progress for Zn-Ion Hybrid Supercapacitors

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Nano-Micro Letters 2022年第4期14卷 158-206页

作者： Jialun Jin Xiangshun Geng Qiang Chen tian-ling ren School of Integrated Circuits and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China College of Material Science and Engineering Zhejiang University of TechnologyHangzhou 310014People’s Republic of China

As a new generation of Zn-ion storage systems,Zn-ion hybrid supercapacitors(ZHSCs)garner tremendous interests recently from researchers due to the perfect integration of batteries and *** have excellent integration of high energy density and power density,which seamlessly bridges the gap between batteries and supercapacitors,becoming one of the most viable future options for large-scale equipment and portable electronic ***,the currently reported two configurations of ZHSCs and corresponding energy storage mechanisms still lack systematic ***,this review will be prudently organized from the perspectives of design strategies,electrode configurations,energy storage mechanisms,recent advances in electrode materials,electrolyte behaviors and further applications(micro or flexible devices)of *** synthesis processes and electrochemical properties of well-designed Zn anodes,capacitor-type electrodes and novel Zn-ion battery-type cathodes are comprehensively ***,a brief summary and outlook for the further development of ZHSCs are presented as *** review will provide timely access for researchers to the recent works regarding ZHSCs.

关键词： Zn-ion storage systems Zn-ion hybrid supercapacitors Carbon electrodes Zinc anodes Electrolytes

Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors

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Tsinghua Science and Technology 2021年第5期26卷 574-591页

作者： Zhaoyi Yan Guangyang Gou Jie ren Fan Wu Yang Shen He tian Yi Yang tian-ling ren the Institute of Microelectronics Tsinghua UniversityBeijing 100084China the Institute of Microelectronics and Tsinghua National Laboratory for Information Science and TechnologyTsinghua UniversityBeijing 100084China

Three main ambipolar compact models for Two-Dimensional(2D)materials based Field-Effect Transistors(2D-FETs)are reviewed:(1)Landauer model,(2)2D Pao-Sah model,and(3)virtual Source Emission-Diffusion(VSED)*** the Landauer model,the Gauss quadrature method is applied,and it summarizes all kinds of variants,exhibiting its *** the 2D Pao-Sah model,the aspects of its theoretical fundamentals are rederived,and the electrostatic potentials of electrons and holes are clarified.A brief development history is compiled for the VSED *** summary,the Landauer model is naturally appropriate for the ballistic transport of short channels,and the 2D Pao-Sah model is applicable to long-channel *** contrast,the VSED model offers a smooth transition between ultimate *** three models cover a fairly completed channel length range,which enables researchers to choose the appropriate compact model for their works.

关键词： Field-Effect Transistor(FET) compact model ambipolar transport Landauer formula Pao-Sah model virtual source

Framework for TCAD augmented machine learning on multi-I-V characteristics using convolutional neural network and multiprocessing

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Journal of Semiconductors 2021年第12期42卷 86-94页

作者： Thomas Hirtz Steyn Huurman He tian Yi Yang tian-ling ren Institute of Microelectronics Tsinghua UniversityBeijing 100084China Department of Computer Science Tsinghua UniversityBeijing 100084China

In a world where data is increasingly important for making breakthroughs,microelectronics is a field where data is sparse and hard to *** a few entities have the infrastructure that is required to automate the fabrication and testing of semiconductor *** infrastructure is crucial for generating sufficient data for the use of new information *** situation generates a cleavage between most of the researchers and the *** address this issue,this paper will introduce a widely applicable approach for creating custom datasets using simulation tools and parallel *** multi-I-V curves that we obtained were processed simultaneously using convolutional neural networks,which gave us the ability to predict a full set of device characteristics with a single *** prove the potential of this approach through two concrete examples of useful deep learning models that were trained using the generated *** believe that this work can act as a bridge between the state-of-the-art of data-driven methods and more classical semiconductor research,such as device engineering,yield engineering or process ***,this research gives the opportunity to anybody to start experimenting with deep neural networks and machine learning in the field of microelectronics,without the need for expensive experimentation infrastructure.

关键词： machine learning neural networks semiconductor devices simulation

Filling the gap: thermal properties and device applications of graphene

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Science China(Information Sciences) 2021年第4期64卷 103-119页

作者： Rui WU Rui-Zhi ZHU Shi-Hui ZHAO Gang ZHANG He tian tian-ling ren Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) Tsinghua University Institute of High Performance Computing A*STAR

With the miniaturization and integration of electronic devices, the heat dissipation problems caused by higher power density are getting more serious, limiting the development of integrated circuits industry. Graphene, as a representative of two-dimensional materials, has attracted extensive attention for its excellent thermal properties. Ever since it has been discovered, researches have been carried out and achievements have been made both theoretically and practically. Here, we review the established theories and simulation system for 2D heat conduction, different measurement methods for thermal conductivity and graphene’s device applications. We propose two gaps between different scales and between theoretical prediction and practical effect. Owing to the higher heat dissipation requirements and the endless pursuit of better thermal performance, it is challenging but critical to continue studying and further understand the thermal properties of graphene. Challenges and opportunities are both emphasized. It is hoped that the diversification and progress in morphology and manufacturing technology can bring new development and that graphene can eventually be widely used and make huge changes to micoelectronic industry.

关键词： graphene thermal properties device application thermal conductivity 2D material

Magnetoresistive behavior and magnetization reversal of NiFe/Cu/CoFe/IrMn spin valve GMRs in nanoscale

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International Journal of Minerals,Metallurgy and Materials 2013年第7期20卷 700-704页

作者： Cong Yin Ze Jia Wei-chao Ma tian-ling ren Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology Tsinghua University

The magnetoresistance behavior and the magnetization reversal mode of NiFe/Cu/CoFe/IrMn spin valve giant magnetoresistance （SV-GMR） in nanoscale were investigated experimentally and theoretically by nanosized magnetic simulation methods. Based on the Landau-Lifshitz-Gilbert equation, a model with a special gridding was proposed to calculate the giant magnetoresistance ratio （MR） and investigate the magnetization reversal mode. The relationship between MR and the external magnetic field was obtained and analyzed. Studies into the variation of the magnetization distribution reveal that the magnetization reversal mode, that is, the jump variation mode for NiFe/Cu/CoFe/IrMn, depends greatly on the antiferromagnetic coupling behavior between the pinned layer and the antiferromagnetic layer. It is also found that the switching field is almost linear with the exchange coefficient.

关键词： giant magnetoresistance (GMR) spin valves nanoscale magnetization reversal