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Prominent cycling reversibility and kinetics enabled by CaTiO3 protective layer on Zn metal for aqueous Zn-ion batteries

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Journal of Energy Chemistry 2025年第1期100卷 245-258页

作者： Gaeun Lee Yong Nam Ahn Seongjoon So Chanwoo park Jong-Seong Bae taehyun park Il Tae Kim Jaehyun Hur School of Chemical Biological and Battery Engineering Gachon University Seongnam Busan Center Korea Basic Science Institute

Aqueous Zn-ion batteries （AZIBs） have received considerable attention owing to their various advantages such as safety,low cost,simple battery assembly conditions,and high ionic ***,they still suffer from serious problems,including uncontrollable dendrite growth,corrosion,hydrogen evolution reaction （HER） from water decomposition,electrode passivation,and unexpected *** creation of a uniform artificial nanocrystal layer on the Zn anode surface is a promising strategy for resolving these ***,we propose the use of a perovskite CaTiO3（CTO） protective layer on Zn（CTO@Zn） as a promising approach for improving the performance of *** CTO artificial layer provides an efficient pathway for Zn ion diffusion towards the Zn metal because of the high dielectric constant （εr=180） and ferroelectric characteristics that enable the alignment of dipole moments and redistribute the Zn2+ions in the CTO *** avoiding the direct contact of the Zn anode with the electrolyte solution,the uneven dendrite growth,corrosion,parasitic side reactions,and HER are mitigated,while CTO retains its mechanical and chemical robustness during ***,CTO@Zn demonstrates an improved lifespan in a symmetric cell configuration compared with bare ***@Zn shows steady overpotential （～68 m V） for 1500 h at 1 mA cm-2/0.5 mA h cm-2,excelling bare ***,when paired with the V2O5-C cathode,the CTO@Zn//V2O5-C full battery delivers 148.4 mA h g-1（based on the mass of the cathode） after 300 *** study provides new insights into Zn metal anodes and the development of high-performance AZIBs.

关键词： Artificial layer Dielectric constant Zn metal anode Zinc aqueous battery

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Leakage pressures for gasketless superhydrophobic fluid interconnects for modular lab-on-a-chip systems

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Microsystems & Nanoengineering 2021年第5期7卷 213-226页

作者： Christopher R.Brown Xiaoxiao Zhao taehyun park Pin-Chuan Chen Byoung Hee You Daniel S.park Steven A.Soper Alison Baird Michael C.Murphy Center for Bio-Modular Multi-Scale Systems Louisiana State UniversityBaton RougeLA 70803USA Department of Mechanical&Industrial Engineering Louisiana State UniversityBaton RougeLA 70803USA Department of Mechanical and Industrial Engineering University of TorontoTorontoON M5S 3GBCanada School of Mechanical Engineering Kyungnam UniversityChangwonSouth Korea Department of Engineering Technology Texas State UniversitySan MarcosTX 78666USA Department of Mechanical Engineering The University of KansasLawrenceKS 66045USA Department of Chemistry The University of KansasLawrenceKS 66045USA SUNY Downstate Stroke Center University Hospital of BrooklynBrooklynNY 11203USA

Chip-to-chip and world-to-chip fluidic interconnections are paramount to enable the passage of liquids between component chips and to/from microfluidic ***,most interconnect designs add additional physical constraints to chips with each additional interconnect leading to over-constrained microfluidic *** competing constraints provided by multiple interconnects induce strain in the chips,creating indeterminate dead volumes and misalignment between chips that comprise the microfluidic system.A novel,gasketless superhydrophobic fluidic interconnect(GSFI)that uses capillary forces to form a liquid bridge suspended between concentric through-holes and acting as a fluid passage was *** GSFI decouples the alignment between component chips from the interconnect function and the attachment of the meniscus of the liquid bridge to the edges of the holes produces negligible dead *** passive seal was created by patterning parallel superhydrophobic surfaces(water contact angle>150°)around concentric microfluidic ports separated by a *** relative position of the two polymer chips was determined by passive kinematic constraints,three spherical ball bearings seated in v-grooves.A leakage pressure model derived from the Young-Laplace equation was used to estimate the leakage pressure at failure for the liquid ***-molded,Cyclic Olefin Copolymer(COC)chip assemblies with assembly gaps from 3 to 240μm were used to experimentally validate the *** maximum leakage pressure measured for the GSFI was 21.4 kPa(3.1 psig),which corresponded to a measured mean assembly gap of 3μm,and decreased to 0.5 kPa(0.073 psig)at a mean assembly gap of 240μ*** effect of radial misalignment on the efficacy of the gasketless seals was tested and no significant effect was *** may be a function of how the liquid bridges are formed during the priming of the chip,but additional research is required to test that hypothesis.

关键词： passive interconnection fluid

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Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

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Journal of Semiconductors 2018年第1期39卷 105-116页

作者： Jiazhen Sheng Ki-Lim Han taehyun Hong Wan-Ho Choi Jin-Seong park Division of Materials Science and Engineering Hanyang University

The current article is a review of recent progress and major trends in the field of flexible oxide thin film transistors（TFTs）, fabricating with atomic layer deposition（ALD） processes. The ALD process offers accurate controlling of film thickness and composition as well as ability of achieving excellent uniformity over large areas at relatively low temperatures. First, an introduction is provided on what is the definition of ALD, the difference among other vacuum deposition techniques, and the brief key factors of ALD on flexible devices. Second, considering functional layers in flexible oxide TFT, the ALD process on polymer substrates may improve device performances such as mobility and stability, adopting as buffer layers over the polymer substrate, gate insulators, and active layers. Third, this review consists of the evaluation methods of flexible oxide TFTs under various mechanical stress conditions. The bending radius and repetition cycles are mostly considering for conventional flexible devices. It summarizes how the device has been degraded/changed under various stress types（directions）. The last part of this review suggests a potential of each ALD film, including the releasing stress, the optimization of TFT structure, and the enhancement of device performance. Thus, the functional ALD layers in flexible oxide TFTs offer great possibilities regarding anti-mechanical stress films, along with flexible display and information storage application fields.

关键词： atomic layer deposition(ALD) oxide semiconductor thin film transistor flexible device mechanical stress

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