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VSe_(2)/V_(2)C heterocatalyst with built-in electric field for efficient lithium-sulfur batteries:Remedies polysulfide shuttle and conversion kinetics

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Journal of Energy Chemistry 2024年第2期89卷 397-409,I0010页

作者： Yanwei Lv Lina Bai Qi Jin siyu deng Xinzhi Ma Fengfeng Han Juan Wang Lirong Zhang Lili Wu Xitian Zhang Key Laboratory for Photonic and Electronic Bandgap Materials Ministry of EducationSchool of Physics and Electronic EngineeringHarbin Normal UniversityHarbin 150025HeilongjiangChina

Lithium sulfur(Li-S)battery is a kind of burgeoning energy storage system with high energy ***,the electrolyte-soluble intermediate lithium polysulfides(Li PSs)undergo notorious shuttle effect,which seriously hinders the commercialization of Li-S ***,a unique VSe_(2)/V_(2)C heterostructure with local built-in electric field was rationally engineered from V_(2)C parent via a facile thermal selenization *** exquisitely synergizes the strong affinity of V_(2)C with the effective electrocatalytic activity of VSe_(2).More importantly,the local built-in electric field at the heterointerface can sufficiently promote the electron/ion transport ability and eventually boost the conversion kinetics of sulfur *** Li-S battery equipped with VSe_(2)/V_(2)C-CNTs-PP separator achieved an outstanding initial specific capacity of 1439.1 m A h g^(-1)with a high capacity retention of 73%after 100 cycles at0.1 *** impressively,a wonderful capacity of 571.6 mA h g^(-1)was effectively maintained after 600cycles at 2 C with a capacity decay rate of 0.07%.Even under a sulfur loading of 4.8 mg cm^(-2),areal capacity still can be up to 5.6 m A h cm^(-2).In-situ Raman tests explicitly illustrate the effectiveness of VSe_(2)/V_(2)C-CNTs modifier in restricting Li PSs *** with density functional theory calculations,the underlying mechanism of VSe_(2)/V_(2)C heterostructure for remedying Li PSs shuttling and conversion kinetics was *** strategy of constructing VSe_(2)/V_(2)C heterocatalyst in this work proposes a universal protocol to design metal selenide-based separator modifier for Li-S ***,it opens an efficient avenue for the separator engineering of Li-S batteries.

关键词： Li-S battery Shuttle effect Separator modifier VSe_(2)/V_(2)C heterostructure Built-in electric field

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叶绿素a和叶绿素b的快速鉴定

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生物学教学 2024年第10期49卷 45-47页

作者：邵倩邓思瑜程亮上海交通大学附属中学上海200439

利用微型质谱仪技术,开发了叶绿素a和叶绿素b的快速检测方法,在短时间内获得物质组分信息。通过微型质谱仪的实际操作,为学习内容引入分析化学、样品前处理以及色谱的概念。其方法高效快捷,更加精确地说明各色素分离条带中物质的性质。... 详细信息

利用微型质谱仪技术,开发了叶绿素a和叶绿素b的快速检测方法,在短时间内获得物质组分信息。通过微型质谱仪的实际操作,为学习内容引入分析化学、样品前处理以及色谱的概念。其方法高效快捷,更加精确地说明各色素分离条带中物质的性质。同时,该技术方法在研究中的引入,不仅拓展学生的知识眼界和探究活动,学生还可以更加深入地了解科学研究的过程和方法,提高科学素养,为将来的学习和发展打下坚实的基础。

关键词：叶绿体色素微型质谱快速鉴定

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Catalytic properties of Cu-Co catalysts supported on HNO_3-pretreated CNTs for higher-alcohol synthesis

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Journal of Natural Gas Chemistry 2011年第1期20卷 48-52页

作者： Limin Shi Wei Chu siyu deng School of Materials and Chemical Engineering Xi＇an Technological University Xi＇an 710032 Shanxi China School of Chemical Engineering Sichuan University Chengdu 610065 Sichuan China

HNO 3 -pretreated CNTs were employed as supports, and a special ultrasound-assisted impregnation method was designed to prepare supported Cu-Co catalysts for higher-alcohol synthesis from syngas. The catalysts used in this work were characterized by N 2 adsorption-desorption, TEM, XRD, H 2 -TPR, CO-TPD techniques. It was found that the pre-treatment procedure of CNTs remarkably promoted the catalytic properties of the Cu-Co/CNTs catalysts. For the Cu-Co catalyst supported on CNTs pre-treated by 68 wt% HNO 3 , some active components were introduced into the CNTs channels, their dispersions and the amount of strongly adsorbed CO-species were improved. The CO conversion and alcohol yield on the HNO 3 -pretreated Cu-Co/CNTs catalyst were increased by ～21% and ～69%, respectively, compared with those on the normal Cu-Co/CNTs catalyst.

关键词： HNO 3 -pretreated CNTs Cu-Co/CNTs catalysts CO hydrogenation higher-alcohols

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数字新质生产力赋能乡村振兴战略:意义、逻辑与实践路径

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中国成人教育 2024年第3期 73-80页

作者：邓斯雨王展鹏石河子大学马克思主义学院新疆石河子832003

数字新质生产力作为生产力在数字化领域内应用的一种新样态,已成为数字经济背景下赋能乡村振兴发展的战略方向和破解乡村振兴实践难题的持续动力。当前,数字新质生产力在提升农民收入、构建智慧数字乡村、促进乡村治理能力现代化等方面... 详细信息

数字新质生产力作为生产力在数字化领域内应用的一种新样态,已成为数字经济背景下赋能乡村振兴发展的战略方向和破解乡村振兴实践难题的持续动力。当前,数字新质生产力在提升农民收入、构建智慧数字乡村、促进乡村治理能力现代化等方面发挥着关键作用。数字新质生产力和乡村振兴的协同作用耦合成一个完整系统,为乡村产业、人才、文化、生态、组织振兴提供了强劲的增力。为此,必须夯实数字基础设施建设、打造在地化数字人才队伍、加速乡村产业升级与转型、构建数字化乡村治理体系,将数字新质生产力的优势转化为推动乡村振兴的实际效益。

关键词：新质生产力数字经济乡村振兴数字人才队伍

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数智化赋能铸牢中华民族共同体意识的变革逻辑、风险审视与纾解路向

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兵团党校学报 2024年第5期 97-105页

作者：邓斯雨王展鹏石河子大学新疆石河子832003

数字技术的快速发展及其智能化应用为新时代铸牢中华民族共同体意识提供了新的历史机遇。数智化深度介入的现实趋势形塑了铸牢中华民族共同体意识工作全新的面貌,使其在技术、主体、空间等多个维度发生深刻变革。但是,数智化赋能铸牢中... 详细信息

数字技术的快速发展及其智能化应用为新时代铸牢中华民族共同体意识提供了新的历史机遇。数智化深度介入的现实趋势形塑了铸牢中华民族共同体意识工作全新的面貌,使其在技术、主体、空间等多个维度发生深刻变革。但是,数智化赋能铸牢中华民族共同体意识过程中可能引发一系列风险问题:信息环境失真化裂解中华民族共同体的舆论形成机制、数字交往圈群化削弱中华民族共同体成员的情感联结、数字技术拜物教化离散中华民族共同体成员的价值持守等。鉴于此,要从健全数字法规、共享平台资源、优化数智技术、消解认知鸿沟等方面探寻纾解之道,以提升铸牢中华民族共同体意识工作智能化发展的质量与水平。

关键词：数智化铸牢中华民族共同体意识数字风险技术治理

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Catalytic properties of Cu/Co/Zn/Zr oxides prepared by various methods

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Journal of Natural Gas Chemistry 2008年第4期17卷 397-402页

作者： Limin Shi Wei Chu siyu deng Huiyuan Xu School of Chemical Engineering Sichuan University Chengdu 610065 Sichuan China

The new Cu-Co based （Cu/Co/Zn/Zr） catalysts for higher-alcohol synthesis were prepared using coprecipitation method, plasma enhanced method and reverse coprecipitation method under ultrasound irradiation. The catalysts were investigated by the means of BET, SEM, XRD, H2-TPR and XPS. Catalytic properties of the catalysts prepared by various methods were examined using CO hydrogenation reaction. It was found that plasma enhanced method and reverse coprecipitation method under ultrasound irradiation were both effective in enhancing the catalytic properties of Cu/Co/Zn/Zr mixed oxides. The small particle size, high dispersion of active components, the improvement of specific surface area and surface contents of active phases could account for the excellent performance of the experimental Cu/Co/Zn/Zr catalysts.

关键词： higher alcohols reverse coprecipitation plasma catalytic activity

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High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels

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Science China(Information Sciences) 2018年第6期61卷 182-191页

作者： Chao YANG Xiaorong LUO siyu deng Fu PENG Bo ZHANG State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

In this paper, we present a novel high-voltage low on-resistance trench-gate（TG） hole-gas enhancement-mode（E-mode） high-electron mobility transistor（HEMT） with multi-conduction channels（MCs） and investigate its mechanism using simulations. This device features a repetitive Al N/Ga N heterojunction unit and a Ga N/Al0.26Ga0.74N hetero-junction. Its source and drain are located on the same side of the metal-insulator-semiconductor（MIS） TG, and the source is located beside the gate. During operation,first, 2-D electron gas（2 DEG） forms MCs at multiple Al N/Ga N hetero-interfaces. These MCs result in ultra-low specific on-resistance(Ron,sp) and improved transconductance（gm）. Second, 2-D hole gas（2 DHG）is induced at the Ga N/Al0.26Ga0.74N hetero-interface to prevent electrons from being injected from the source to the MCs. As such, E-mode operation is realized, which exceeds the performance of the conventional E-mode method by depleting the 2 DEG under the gate. Third, in the off-state, 2 DHG and 2 DEG are depleted into negative and positive charges, respectively, thereby forming the polarization junction. This depletion region is extended due to the electric field（E-field） modulation effect by the polarization junction,thereby achieving an enhanced breakdown voltage（BV）. Fourth, the drain-induced barrier lowering（DIBL）effect is significantly suppressed, which ensures a high BV and low leakage current. Additionally, due to the unique source location, the TG-MC-HEMT is smaller than the conventional MIS Al Ga N/Ga N HEMT（Con-HEMT）. The BV of the TG-MC-HEMT is 604 V and the Ron,sp value can be as small as 0.38 m?·cm2.

关键词： multi-conduction channels 2-D hole gas polarization-junction high-voltage low specific onresistance drain-induced barrier lowering effect

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Effects of impregnation sequence on the microstructure and performances of Cu-Co based catalysts for the synthesis of higher alcohols

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Journal of Natural Gas Chemistry 2008年第4期17卷 369-373页

作者： siyu deng Wei Chu Huiyuan Xu Limin Shi Lihong Huang Department of Chemical Engineering Sichuan University Chengdu 610065 Sichuan China

Silica-supported CuCo catalysts were prepared by impregnation method with different impregnation sequence for higher alcohols synthesis. These catalysts were characterized by H2-TPR, XRD, N2 adsorption, XPS techniques and CO selective hydrogenation reaction measurement. The effects of impregnation sequence on the structure and performance of catalysts were investigated, and there were important influences on the selectivity to higher alcohols. There was a strong synergistic effect between copper and cobalt for the co-impregnated sample. The CuCo/SiO2 catalyst prepared by co- impregnation showed a better yield of total alcohols, and a higher selectivity to total alcohols which reached 51.5%.

关键词： copper cobalt impregnation sequence synergistic effect selective hydrogenation carbon monoxide

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A novel ferroelectric based on quinuclidine derivatives

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Chinese Chemical Letters 2020年第6期31卷 1686-1689页

作者： siyu deng Junyi Li Xiang Chen Yunlong Hou Lizhuang Chen School of Environmental and Chemical Engineering Jiangsu University of Science and TechnologyZhenjiang 212003China

The compound[(CH3)2 CH-C3 H17 N][CoBr4](1)based on quinuclidine derivatives was achieved by the solution synthetic method and characterized by elemental analysis,infrared spectroscopy,single-crystal X-ray structural analysis and dielectric measurement,***-temperature single-crystal X-ray diffraction suggested that the compound unde rwent the phase transition from the space group C2/c to *** polarization curve was measured using the Sawyer-Tower *** structural phase transitions of 1 was ascribed to the distortion of a[(CH3)2 CH-C3 H17N]2+cation from this inorganicorganic hybrid material[(CH3)2 CH-C3 H17N][CoBr4].The strong change in dielectric anomalies makes compound 1 a suitable candidate for promising switchable dielectric *** work represents a feasible strategy thought for the targeted harvesting of low temperature ferroelectrics.

关键词： Ferroelectric Quinuclidine Phase transition Polarization Dielectric

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Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers

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Science China(Information Sciences) 2019年第6期62卷 87-97页

作者： Fu PENG Chao YANG siyu deng Dongya OUYANG Bo ZHANG Jie WEI Xiaorong LUO State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A novel three-dimensional hole gas(3 DHG) enhancement-mode(E-mode) heterostructure fielde?ect transistor(HFET) is proposed and investigated. It features back-to-back graded AlGaN(BGA) barrier layers consisting of a positive-graded AlGaN layer and a negative-graded AlGaN layer, which form polarization gradient and subsequently induce the three-dimensional electron gas(3 DEG) and 3 DHG in the positiveand negative-graded AlGaN layers, respectively. The source and drain are located at the same side of the metal-insulator-semiconductor(MIS) trench gate, and the source is in contact with the HfO2 gate ***, the on-state current is significantly improved owing to the high-density 3 DEG in the positive-graded AlGaN. Next, the vertical conductive channel between the source and 3 DEG is blocked by the 3 DHG, thereby realizing the E-mode. The threshold voltage(Vth) can be modulated by a partial doping conductive ***, a high breakdown voltage(BV) is obtained, because the polarization junction formed by the polarization charges assists in depleting the drift region in the o?-state. Next, the BGA-HFET is smaller than the conventional HFET(Con-HFET) owing to the special location of the source. The BV of the proposed HFET sharply increases to 919 V from 39 V of the Con-HFET with the same gate-drain spacing, and the saturation drain current is increased by 103.5%.

关键词： graded AlGaN 3DHG-3DEG large on-state current high voltage enhancement mode

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