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集成宽带混沌半导体激光器

激光与光电子学进展 2024年第15期61卷 1-6页

作者：刘雄贾志伟赵爱忠王龙生王安帮太原理工大学新型传感器与智能控制教育部/山西省重点实验室太原理工大学电子信息与光学工程学院广东工业大学信息工程学院

集成混沌激光器是高速混沌保密通信和高速密钥产生与分发的关键器件，现有集成混沌激光器的混沌带宽无法满足高速应用需求。本文聚焦于集成宽带混沌半导体激光器的研制，基于团队前期研制的短腔分布反馈半导体激光器芯片，分析集成空间... 详细信息

集成混沌激光器是高速混沌保密通信和高速密钥产生与分发的关键器件，现有集成混沌激光器的混沌带宽无法满足高速应用需求。本文聚焦于集成宽带混沌半导体激光器的研制，基于团队前期研制的短腔分布反馈半导体激光器芯片，分析集成空间光反馈结构中实现强光反馈的条件，优化反馈腔长度，最终制备了光纤/空间双端出光的短腔分布反馈半导体激光器。将其与反射镜及调节装置实现集成化，研制出体积为16 cm×8 cm×7 cm的集成宽带混沌半导体激光器，混沌带宽超过30 GHz。

关键词：集成激光器混沌激光光反馈高速保密通信宽带

Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu liu Can liu Chunsen liu Guanyu liu Kaihui liu Liwei liu Sheng liu Yuan liu Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic Science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of Physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou Laboratory State Key Laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin Laboratory Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronicdevices optoelectronic devices multi-functional integration

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X射线密度测井屏蔽体的蒙特卡罗模拟研究

核技术 2024年第8期47卷 8-14页

作者：刘睿于华伟祝倩岳爱忠王虎刘超卓张倩文杨树祝林苛张晓蕾中国石油大学(华东)深层油气全国重点实验室青岛266580 中国石油大学(华东)地球科学与技术学院青岛266580 中国石油集团测井有限公司测井技术研究院西安710077 中国石油大学(华东)理学院青岛266580

密度测井中使用可控X射线源替代137Cs放射源已经成为新的趋势。X射线源强度受靶基上高压影响较大,当高压为350 kV时,密度测量不确定度可以保持在0.01 g·cm-3。为探究适用于350 kV高压X射线密度测井仪器的屏蔽体材料及厚度等参数,利用... 详细信息

密度测井中使用可控X射线源替代137Cs放射源已经成为新的趋势。X射线源强度受靶基上高压影响较大,当高压为350 kV时,密度测量不确定度可以保持在0.01 g·cm-3。为探究适用于350 kV高压X射线密度测井仪器的屏蔽体材料及厚度等参数,利用蒙特卡罗方法研究了X射线穿过不同材料与厚度后的能谱及计数率;并且通过对0~0.15 MeV、0.15~0.35 MeV两个能窗相关响应关系的对比,分析了不同能窗中X射线衰减与探测器计数率差异的原因。另外结合四探测器X射线密度测井仪器实际结构,主要考虑了三部分粒子对探测器的影响,并通过MCNP模拟分析并设计了各部分屏蔽体的放置方式及最佳厚度。研究表明:X射线的衰减无论在高能窗还是低能窗,都随着屏蔽材料原子序数及厚度而增大。选择钨镍铁合金为四探测器X射线密度测井仪器模型的屏蔽材料;在基座与近源距探测器之间设置的屏蔽体厚度为1.75 cm,每个探测器之间放置厚度为0.2 cm的屏蔽体,探测器背部增加0.35 cm厚度的屏蔽体。本研究为X射线密度测井仪研制中的屏蔽材料和结构提供了设计理论和关键参数。

关键词：可控源 X射线密度测井蒙特卡罗模拟屏蔽体

不同遮阳率对蒜头果幼苗生长及生物量分配的影响

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西南林业大学学报（自然科学） 2024年第2期44卷 36-41页

作者：熊旭东刘爱忠鲁赛郭晓春贾代顺徐德兵西南林业大学林学院云南昆明650233 云南省林业和草原科学院油茶研究所云南广南663300

利用遮阳网产生的不同光照强度设80%、40%、无遮阳3种遮阳条件,研究遮阳率变化对1年生蒜头果幼苗苗木质量的影响。结果表明:随着遮阳率增加,幼苗地径、叶片数、主根长、一级根数、一级根长及各器官生物量先增加后减少;不同遮阳率下蒜头... 详细信息

利用遮阳网产生的不同光照强度设80%、40%、无遮阳3种遮阳条件,研究遮阳率变化对1年生蒜头果幼苗苗木质量的影响。结果表明:随着遮阳率增加,幼苗地径、叶片数、主根长、一级根数、一级根长及各器官生物量先增加后减少;不同遮阳率下蒜头果幼苗之间各器官生物量分配存在显著差异(P<0.05),表现为80%遮阳率时,地上部分生物量分配较多而根系分配较少,随着遮阳率降低蒜头果幼苗选择优先于根系生长;遮阳率过高会导致蒜头果幼苗根系生长受到限制,反之则致使地上部分发育困难,40%遮阳率蒜头果幼苗发育均衡,质量最佳。

关键词：蒜头果遮阳率生长量生物量

一种实现单层MoS_(2)光致发光显著增强的有效缺陷工程策略

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Science China Materials 2024年第7期67卷 2232-2238页

作者：陈荧黄卓睿刘华伟喻国粮张金鼎徐哲元陈明星李东马超黄明朱小莉陈舒拉蒋英潘安练 Key Laboratory for Micro-Nano Physics and Technology of Hunan Province Hunan Institute of Optoelectronic IntegrationSchool of Physics and ElectronicsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China School of Physics and Electronics Hunan Normal UniversityChangsha 410081China State Key Laboratory of Powder Metallurgy Central South UniversityChangsha 410083China

二维过渡金属硫族化合物(TMDCs)材料被认为是拓展摩尔定律的极具前景的候选材料.然而,该材料的低光致发光效率严重限制了其实际应用,其本质源于材料制备中不可避免引入的缺陷.在本文中,我们报道了一种Sr掺杂单层MoS_(2)的有效缺陷工程策... 详细信息

二维过渡金属硫族化合物(TMDCs)材料被认为是拓展摩尔定律的极具前景的候选材料.然而,该材料的低光致发光效率严重限制了其实际应用,其本质源于材料制备中不可避免引入的缺陷.在本文中,我们报道了一种Sr掺杂单层MoS_(2)的有效缺陷工程策略,该策略在实验上通过简便的化学气相沉积(CVD)一步法成功实现.所制备的具有亚毫米(~324μm)级的大尺寸样品的光致发光可实现高达两个数量级的增强,并伴随着载流子寿命的显著增强.这一现象主要归因于Sr掺杂后MoS_(2)体系中其三激子向激子转换.与此同时,掺杂样品的辐射质量和稳定性也显著提升.第一性原理计算进一步阐明了其调控机制,即在MoS_(2)中引入适当互补缺陷能级与其自身的缺陷能级协同,从而可调节其载流子组分,以实现光致发光的显著增强.此外,我们的缺陷工程策略也适用于其他掺杂剂,如钙掺杂剂.我们的工作报告了一种可以显著提升单层MoS_(2)的荧光性能的有效缺陷工程策略,这为设计和调控二维TMDCs的光电特性提供一种极具前途的方法.

关键词： MoS_(2) substitutional doping photoluminescence in-tensity enhancement first-principles calculations

3种寄主植物对蒜头果幼苗生长和生物量分配的影响

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西南林业大学学报（自然科学） 2024年第3期44卷 191-197页

作者：熊旭东刘爱忠鲁赛郭晓春贾代顺徐德兵西南林业大学林学院云南昆明650233 云南省林业和草原科学院油茶研究所云南文山663300

选择清香木、猪毛蒿及桤木与蒜头果共同栽培1a后,测定分析不同寄主植物对蒜头果苗高和地径等生长指标、生物量分配和叶绿素含量的影响,并据此进行苗木质量评价。结果表明:蒜头果在实验中表现出明显的寄主偏好性,其中猪毛蒿与蒜头果共同... 详细信息

选择清香木、猪毛蒿及桤木与蒜头果共同栽培1a后,测定分析不同寄主植物对蒜头果苗高和地径等生长指标、生物量分配和叶绿素含量的影响,并据此进行苗木质量评价。结果表明:蒜头果在实验中表现出明显的寄主偏好性,其中猪毛蒿与蒜头果共同栽培1 a后,蒜头果幼苗苗高达77.5cm,地径达13.69mm,叶面积达51.47cm^(2),一级根数达8.33根,平均一级根长达28.91cm,吸器数达27.0个,单株生物量达27.14g,与单株栽培处理呈极显著差异。同时猪毛蒿为寄主时,其地上分配比为51.08%,整株地上和地下两部分呈均衡发展趋势,根茎比、根冠比和根叶比相比单株种植有所提升,非光合器官与光合器官比降低,因此蒜头果能更好利用寄主为自身生长发育提供养分。不同寄主植物对蒜头果叶绿素含量影响显著,表明寄主能发挥一定的遮阳作用,影响蒜头果叶绿素的含量,但在蒜头果苗木发育过程中不起主导作用。苗木质量指数显示,猪毛蒿为寄主植物时,QI为4.36,苗木质量最佳。

关键词：蒜头果根寄主植物生物量

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Characterization and functional divergence of genes encoding sucrose transporters in oilseeds castor bean

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Oil Crop Science 2022年第1期7卷 31-39页

作者： Pei Jin Di Wu Huan Dai Rui Sun aizhong liu Key Laboratory for Forest Resources Conservation and Utilization in the Southwest Mountains of China Ministry of EducationSouthwest Forestry UniversityKunmingChina Key Laboratory of Economic Plants and Biotechnology Yunnan Key Laboratory for Wild Plant ResourcesKunming Institute of BotanyChinese Academy of SciencesKunmingChina

Castor bean(Ricinus communis L.)is an economically important non-edible oilseed *** seed oils are rich in hydroxy fatty acid,which are highly valuable with a wide range of industrial *** transportation is critical in regulating the growth,development and oilseed yield in castor *** transporters or carriers(SUTs or SUCs)play a central role in orchestrating sucrose allocation and aiding in plant adaptation to diverse *** this study,based on castor bean genome,three RcSUCs(RcSUC2,RcSUC3 and RcSUC4)were identified and *** expressional profiles of RcSUCs in different tissues such as leaf,stem,root,phloem and seed tissues exhibited a distinct divergence of gene expression,suggesting that the functions of RcSUC2,RcSUC3 and RcSUC4 are differentiated into long or short-distance transportation among ***,under abiotic stresses including hot temperature,low temperature,drought and salt stresses,the sugar allocation among leaf,stem and roots was *** expressional changes of Rc SUCs in leaf,stem and root tissues were associated with sugar transportation and *** together,the differential expression of Rc SUCs among tissues responsing to abiotic stress suggested functional differences in sucrose transport and redistribution in different *** study is helpful to understand the physiological and molecular mechanisms of sucrose transportation and allocation among tissues in heterotrophic oilseeds,and could provide clues for genetic improvement and optimization of cultivation practices.

关键词： Sucrose transporter Castor bean Gene identification Expression profile Abiotic stress

Evidence for moiréintralayer excitons in twisted WSe_(2)/WSe_(2) homobi layer superlattices

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Light(Science & Applications) 2022年第7期11卷 1493-1500页

作者： Biao Wu Haihong Zheng Shaofei Li Junnan Ding Jun He Yujia Zeng Keqiu Chen Zongwen liu shula Chen Anlian Pan Yanping liu School of Physics and Electronics Hunan Key Laboratory for Super-microstructure and Ultrafast ProcessCentral South University932 South Lushan RoadChangshaHunan 410083China State Key Laboratory of High-Performance Complex Manufacturing Central South University932 South Lushan RoadChangshaHunan 410083China Department of Applied Physics School of Physics and ElectronicsHunan UniversityChangsha 410082China School of Chemical and Biomolecular Engineering The University of SydneySydneyNSW 2006Australia The University of Sydney Nano Institute The University of SydneySydneyNSW 2006Australia Hunan Institute of Optoelectronic Integration College of Materials Science and EngineeringHunan UniversityChangshaHunan 410082China Shenzhen Research Institute of Central South University A510aVirtual University BuildingSouthern DistrictHigh-tech Industrial ParkYuehai StreetNanshan DistrictShenzhenChina

Recent advances in twisted van der Waals heterostructure superlattices have emerged as a powerful and attractive platform for exploring novel condensed matter physics due to the interplay between the moirépotential and Coulomb *** moirésuperlattices act as a periodic confinement potential in space to capture interlayer excitons(IXs),resulting in moiréexciton arrays,which provide opportunities for quantum emitters and many-body *** observation of moiréIXs in twisted transition-metal dichalcogenide(TMD)heterostructures has recently been widely ***,the capture and study of the moiréintralayer excitons based on TMD twisted homobilayer(T-HB)remain ***,we report the observation of moiréintralayer excitons in a WSe_(2)/WSe_(2) T-HB with a small twist angle by measuring PL *** multiple split peaks with an energy range of 1.55-1.73 eV are different from that of the monolayer WSe_(2) exciton *** split peaks were caused by the trapping of intralayer excitons via the moiré*** confinement effect of the moirépotential on the moiréintralayer excitons was further demonstrated by the changing of temperature,laser power,and valley *** findings provide a new avenue for exploring new correlated quantum phenomena and their applications.

关键词： twisted layer quantum

基于CsPbBr_(3)纳米片的低阈值上转换等离子体激光器

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Science China Materials 2024年第7期67卷 2277-2284页

作者：张全龙翟继新刘晨曦钟倩倩纪志强易潇钟阳光何承林骆子煜汪练成陈舒拉潘安练 Key Laboratory for Micro-Nano Physics and Technology of Hunan Province Hunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringSchool of Physics and ElectronicsHunan UniversityChangsha 410082China School of Mechanical and Vehicle Engineering Hunan UniversityChangsha 410082China School of Physics and Electronics Hunan UniversityChangsha 410082China State Key Laboratory of Precision Manufacturing for Extreme Service Performance College of Mechanical and Electrical EngineeringCentral South UniversityChangsha 410083China

上转换激光器为新一代高度集成的非线性光电应用提供了一个强大的平台,解决了现代光子集成电路不断发展对小型化、低损耗和高质量非线性光源的诉求.然而,对于具有反斯托克斯过程的上转换激光器,减小尺寸和阈值是其不可避免的巨大挑战.... 详细信息

上转换激光器为新一代高度集成的非线性光电应用提供了一个强大的平台,解决了现代光子集成电路不断发展对小型化、低损耗和高质量非线性光源的诉求.然而,对于具有反斯托克斯过程的上转换激光器,减小尺寸和阈值是其不可避免的巨大挑战.本文报道了一种基于CsPbBr_(3)纳米片的室温上转换等离子体纳米激光器,该激光器在较宽的尺寸范围内表现出显著的阈值降低,同时依旧保持着较高的品质因子.更激动人心的是,本文成功制造了厚度低至70 nm的小型化上转换等离子体激光器,突破光学衍射极限到深亚波长范围.同时,本文利用仿真模拟描述了双光子激发光场的分布情况,揭示了等离子体辅助激光发射并降低阈值的过程.此外,SiO_(2)绝缘层厚度依赖实验证明了双光子激发光约束强度和珀塞尔效应的可调谐特性,这为实现等离子体器件性能的有效调控提供了有效方案.本文展示了高效和低阈值的上转换等离子体纳米激光器,为片上非线性光源的发展奠定了夯实的基础.

关键词： upconversion plasmonic nanolasers perovskites Purcell effect