检索结果-南通市图书馆

Journal of Energy Chemistry 2025年第1期100卷 59-65页

作者： Mengyu Xu Shaocong Yan Ting Liang Jia Jia shengjie yuan Dongxing Kou Zhengji Zhou Wenhui Zhou Yafang Qi Yuena Meng Litao Han Sixin Wu Key Laboratory for Special Functional Materials of MOE National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology School of Nanoscience and Materials Engineering Henan University

Solution-processed Cu（In,Ga）Se2（CIGS） solar cells suffer from serious carrier recombination and power conversion efficiency（PCE） loss because of the poor film properties and easy formation of ***, we propose Ag&Se co-selenization strategy to enhance the crystallization and passivate harmful defects of the CIGS films. The formation of Ag-Se phase during the selenization process enables the formation of large grains and suppresses the deep level defects. It is found that Ag doping can enlarge the depletion region width, lower the Urbach energy and prolong the carrier lifetime. As a result, a champion solution-processed CIGS solar cell presents a high efficiency of 16.48% with the highly improved opencircuit voltage（VOC） of 662 m V and fill factor（FF） of 75.8%. This work provides an efficient strategy to prepare high quality solution-processed CIGS films for high-performance CIGS solar cells.

关键词： CIGS solar cells Solution-processed method Ag doping Crystal growth Defects engineering

Surface defect ordered Cu_(2)ZnSn(S,Se)_(4) solar cells with efficiency over 12% via manipulating local substitution

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Journal of Energy Chemistry 2022年第4期31卷 555-562页

作者： Changcheng Cui Dongxing Kou Wenhui Zhou Zhengji Zhou shengjie yuan Yafang Qi Zhi Zheng Sixin Wu Key lab for Special Functional Materials Ministry of EducationNational&Local Joint Engineering Research Center for High-Efficiency Display and Lighting TechnologySchool of Materials Science and EngineeringCollaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004HenanChina Inst Surface Micro&Nano Mat Coll Adv Mat&EnergyKey Lab Micronano Energy Storage&Convers Mat HeXuchang UniversityXuchang 461000HenanChina

The environmentally friendly Cu_(2)ZnSn(S,Se)_(4)(CZTSSe) compounds are promising direct bandgap materials for application in thin film solar cells, but the spontaneous surface defects disordering would lead to large open-circuit voltage deficit(V_(oc,deficit)) and significantly limit kesterite photovoltaics performance,primarily arising from the generated more recombination centers and insufficient p to n conversion at p-n junction. Herein, we establish a surface defects ordering structure in CZTSSe system via local substitution of Cu by Ag to suppress disordered Cu_(Zn) defects and generate benign n-type Zn_(Ag) donors. Taking advantage of the decreased annealing temperature of Ag F post deposition treatment(PDT), the high concentration of Ag incorporated into surface absorber facilitates the formation of surface ordered defect environment similar to that of efficient CIGS PV. The manipulation of highly doped surface structure could effectively reduce recombination centers, increase depletion region width and enlarge the band bending near p-n junction. As a result, the Ag F-PDT device finally achieves maximum efficiency of 12.34% with enhanced V_(oc) of 0.496 V. These results offer a new solution route in surface defects and energy-level engineering, and open the way to build up high quality p-n junction for future development of kesterite technology.

关键词： Kesterite Cu_(2)ZnSn(S,Se)_(4)thin film solar cells Interface recombination Defect passivation Ag substitution

Lithium-assisted synergistic engineering of charge transport both in GBs and GI for Ag-substituted Cu2ZnSn(S,Se)4 solar cells

在线全文

学校读者我要写书评

暂无评论

Journal of Energy Chemistry 2020年第11期29卷 9-15页

作者： Xiangyun Zhao Xiaohuan Chang Dongxing Kou Wenhui Zhou Zhengji Zhou Qingwen Tian shengjie yuan Yafang Qi Sixin Wu The authors contributed equally to this work Key Lab for Special Functional MaterialsMinistry of EducationNational&Local Joint Engineering Research Center for High-Efficiency Display and Lighting TechnologySchool of Materials Science and EngineeringCollaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004HenanChina

Although silver(Ag) substitution offers several benefits in eliminating bulk defects and facilitating interface type inversion for Cu2ZnSn(S,Se)4(CZTSSe) photovoltaic(PV) technology, its further development is still hindered by the fairly low electrical conductivity due to the significant decrease of acceptors *** this work, a versatile Li–Ag co-doping strategy is demonstrated to mitigate the poor electrical conductivity arising from Ag through direct incorporating Li via postdeposition treatment(PDT) on top of the Ag-substituted CZTSSe absorber. Depth characterizations demonstrate that Li incorporation increases ptype carrier concentration, improves the carrier collection within the bulk, reduces the defects energy level as well as inverts the electric field polarity at grain boundaries(GBs) for Ag-substituted CZTSSe system. Benefiting from this lithium-assisted complex engineering of electrical performance both in grain interior(GI) and GBs, the power conversion efficiency(PCE) is finally increased from 9.21% to 10.29%. This systematic study represents an effective way to overcome the challenges encountered in Ag substitution,and these findings support a new aspect that the synergistic effects of double cation dopant will further pave the way for the development of high efficiency kesterite PV technology.

关键词： Cu2ZnSn(S,Se)4 Thin film solar cell Ag substitution Alkali doping Post-treatment

Adjusting the SnZn defects in Cu_(2)ZnSn(S,Se)_(4) absorber layer via Ge^(4+) implanting for efficient kesterite solar cells

在线全文

学校读者我要写书评

暂无评论

Journal of Energy Chemistry 2021年第10期30卷 1-7,I0001页

作者： Yueqing Deng Zhengji Zhou Xin Zhang Lei Cao Wenhui Zhou Dongxing Kou Yafang Qi shengjie yuan Zhi Zheng Sixin Wu Key Lab for Special Functional Materials Ministry of EducationNational and Local Joint Engineering Research Center for High-Efficiency Display and Lighting TechnologyAnd School of MaterialsHenan UniversityKaifeng 475004HenanChina Collaborative Innovation Centre of Nano Functional Materials and Applications HenanChina Key Laboratory for Micro-Nano Energy Storage and Conversion Materials of Henan Province College of Advanced Materials and EnergyInstitute of Surface Micro and Nano MaterialsXuchang UniversityXuchang 461000HenanChina

The development of kesterite photovoltaic solar cells has been hindered by large open-circuit voltage(V_(oc))***,Snzn deep point defect and associative defect cluster have been recognized as the main culprit for the Voc ***,manipulating the deep-level donor of Snzn antisite defects is crucial for breaking through the bottleneck of present Cu_(2) ZnSn(S,Se)_(4)(CZTSSe)photovoltaic *** this study,the Snzn deep traps in CZTSSe absorber layer are suppressed by incorporation of *** energy levels and concentration of Snzn defects measured by deep-level transient spectroscopy(DLTS)decrease *** addition,the grain growth of CZTSSe films is also promoted due to Ge implantation,yielding the high quality absorber ***,the efficiency of CZTSSe solar cells increases from 9.15%to 11.48%,largely attributed to the 41 mV Voc increment.

关键词： CZTSSe Defect Absorber layer Solar cells V_(oc)

Improving the Performance of PbS Quantum Dot Solar Cells by Optimizing ZnO Window Layer

在线全文

学校读者我要写书评

暂无评论

Nano-Micro Letters 2017年第2期9卷 156-165页

作者： Xiaokun Yang Long Hu Hui Deng Keke Qiao Chao Hu Zhiyong Liu shengjie yuan Jahangeer Khan Dengbing Li Jiang Tang Haisheng Song Chun Cheng Wuhan National Laboratory for Optoelectronics(WNLO)and School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074People’s Republic of China State Key Laboratory of Digital Manufacturing Equipment and Technology Huazhong University of Science and TechnologyWuhan 430074People’s Republic of China Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology South University of Science and TechnologyShenzhen 518055People’s Republic of China

Comparing with hot researches in absorber layer,window layer has attracted less attention in PbS quantum dot solar cells(QD SCs). Actually, the window layer plays a key role in exciton separation, charge drifting, and so ***, ZnO window layer was systematically investigated for its roles in QD SCs performance. The physical mechanism of improved performance was also explored. It was found that the optimized ZnO films with appropriate thickness and doping concentration can balance the optical and electrical properties, and its energy band align well with the absorber layer for efficient charge extraction. Further characterizations demonstrated that the window layer optimization can help to reduce the surface defects, improve the heterojunction quality, as well as extend the depletion width. Compared with the control devices, the optimized devices have obtained an efficiency of 6.7% with an enhanced V_(oc) of 18%, J_(sc) of 21%, FF of 10%, and power conversion efficiency of 58%. The present work suggests a useful strategy to improve the device performance by optimizing the window layer besides the absorber layer.

关键词： ZnO Window layer Thin film solar cells PbS quantum dots Physical mechanism

Hydroiodic Acid Additive Enhanced the Performance and Stability of PbS-QDs Solar Cells via Suppressing Hydroxyl Ligand

在线全文

学校读者我要写书评

暂无评论

Nano-Micro Letters 2020年第3期12卷 117-128页

作者： Xiaokun Yang Ji Yang Jahangeer Khan Hui Deng shengjie yuan Jian Zhang Yong Xia Feng Deng Xue Zhou Farooq Umar Zhixin Jin Haisheng Song Chun Cheng Mohamed Sabry Jiang Tang Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyLuoyu Road 1037Wuhan 430074People’s Republic of China Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology South University of Science and TechnologyShenzhen 518055People’s Republic of China Shenzhen R&D Center of Huazhong University of Science and Technology Shenzhen 518000People’s Republic of China School of Optical and Electronic Information Huazhong University of Science and Technology1037 Luoyu RoadWuhan 430074People’s Republic of China National Center for Magnetic Resonance in Wuhan State Key Laboratory of Magnetic Resonance and Atomic and Molecular PhysicsWuhan Institute of Physics and MathematicsChinese Academy of SciencesWuhan 430071People’s Republic of China Physics Department College of Applied ScienceUmm Al-Qura UniversityMeccaKingdom of Saudi Arabia Solar Physics Lab National Research Institute of Astronomy and GeophysicsCairoEgypt

The recent emerging progress of quantum dot ink(QD-ink)has overcome the complexity of multiple-step colloidal QD(CQD)film preparation and pronouncedly promoted the device ***,the detrimental hydroxyl(OH)ligands induced from synthesis procedure have not been completely ***,a halide ligand additive strategy was devised to optimize QD-ink *** simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface,which increase carrier mobility of the QDs films and achieve thicker absorber with improved *** corresponding power conversion efficiency of this optimized device reached 10.78%.(The control device was 9.56%.)Therefore,this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands,which is also compatible with other CQD-based optoelectronic devices.

关键词： Hydroxyl ligand HI additive Surface passivation Quantum dots ink Solar cells

High Efficiency CIGS Solar Cells by Bulk Defect Passivation through Ag Substituting Strategy

在线全文

学校读者我要写书评

暂无评论

High Efficiency CIGS Solar Cells by Bulk Defect Passivation ...

Efficient and stable antimony sulfide planar thin film solar cells

第七届新型太阳能电池材料科学与技术学术研讨会

作者： Zhao Yunhai yuan shengjie Wu Sixin Key Laboratory for Special Functional Materials of MOE School of MaterialsHenan University

Cu(In,Ga)Se(CIGS) is considered a promising photovoltaics material due to its excellent properties and high ***,the complicated deep defects in the CIGS layer hamper the development of polycrystalline CIGS solar *** efforts have been employed to passivate these defects which distributed in the grain boundary and the CIGS/CdS *** this work,we implemented an effective Ag substituting approach to passivate bulk defects in CIGS *** composition and phase characterizations revealed that Ag was successfully incorporated in the CIGS *** substituting of Ag could boost the crystallization without obviously changing the band *** C-V and EIS results demonstrated that the device showed enlarged Wd and beneficial carrier transport dynamics after Ag *** DLTS result revealed that the deep In Cu defect density was dramatically decreased after Ag substituting for Cu.A champion Ag-substituted CIGS device exhibited a remarkable efficiency of 15.82%,with improved VOC of 630 mV,JSC of 34.44 mA/cm,and FF of 72.90%.Comparing with the efficiency of an unsubstituted CIGS device(12.18%),a Ag-substituted CIGS device exhibited 30% enhancement.

关键词： CIGS solar cells Ag substituting solution-process defects passivation

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

Efficient and stable antimony sulfide planar thin film solar...

(NH4)2S-induced improvement of CdS buffer layer for 15.52% Efficiency Solution-Processed CIGS Solar Cell

第六届新型太阳能电池材料科学与技术学术研讨会

作者： Haisheng Song Hui Deng shengjie yuan Jiang Tang Wuhan National Laboratory for Optoelectronics (WNLO) Huazhong University of Science and Technology

Antimony chalcogenide has attracted great research interest very recently as a promising absorber material for thin film photovoltaics because of their unique optical and electrical properties, binary compound and easy synthesis. Firstly, SbS planar solar cells from evaporation method without hole-transport layer(HTM) assistance suffer from sulfur deficit vacancy and high back contact barrier. Thus we developed a post-surface selenization treatment to SbS thin film in order to improve the device performance. The treated HTM-free SbS based solar cells were fabricated and an improved efficiency of 4.17% was obtained. The obtained VOC of 0.714 V was the highest and the power conversion efficiency also reached the top value among HTM-free planar SbS solar cells. The back alloying could suppress the rear contact barrier to improve the fill factor and carrier extraction capability. Secondly, because of the one dimensional crystal structure, it is a big challenge to implement efficient doping. And the performance of reported thin film solar cells is limited by high resistivity and deep work function induced hole extraction barrier. Herein, we introduce a co-evaporation scheme for copper doping into SbS lattice. Cu-doped SbS thin film enhanced the crystallinity and conductivity along with improved carrier concentration. Simultaneously, the deep valance band obtained a minor upshift favoring the hole extraction. Consequently, all the photovoltaic parameters are improved and the power conversion efficiency was boost from 4.18% to 4.61%. Recently, we controlled the crystallization of buffer layer to induce vertical orientation SbS absorber overcoming interface defects and absorber transport loss. Such novel growth could pronouncedly improve the open-circuit voltage due to the superior interface quality and intra-ribbon transport. It was optimized by tuning the grain sizes to form strong light trapping effect, which further enhanced the short-circuit current density with 16% im

关键词： Sb2S3 solar cell quasi-epitaxy preferred orientation doping light trapping

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

(NH4)2S-induced improvement of CdS buffer layer for 15.52% E...

尼泊尔8.1级地震加德满都—樟木沿线民居震害调查与分析

第十一届新型太阳能材料科学与技术学术研讨会

作者： Xia Wang Yang Li Qianqian Gao Jun Kong shengjie yuan Sixin Wu Key Lab for Special Functional Materials Henan University

Heterojunction interfacial engineering plays a crucial role for the CIGS efficiency *** bath deposition（CBD） prepared CdS is the most preferred buffer for CIGS solar ***,manipulating the CdS properties to further boost heterojunction quality is a promising way to achieve higher efficiency CIGS solar *** this work,CdS buffer layer was modified by （NH）S（AS-treatment） *** results showed that after AS treatment,the impurities on CdS film were cleaned and the S vacancy was ***,it introduced larger build-in electric field,wider depletion width and less interface defect densities,which contributed to suppressed interface recombination and more efficient carrier separation and ***,the CIGS solar cell based on AS-treatment achieved champion efficiency of 15.52%,with improved VOC of 643 mV and FF of 73.3%.

关键词： (NH4)2S CdS CIGS solar cells solution processed method

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

湖南大学学报（自然科学版） 2017年第3期44卷 35-44页

作者：潘毅王忠凯时胜杰袁双西南交通大学土木工程学院四川成都610031 抗震工程技术四川省重点实验室四川成都610031

为了分析尼泊尔地震中山区公路沿线自建民居的震害,在对加德满都-樟木口岸公路沿线民居震害调查的基础上,详细介绍了框架结构和砌体结构自建民居的特点,按照地震直接灾害和次生灾害,总结了这2种自建民居结构的震害特征,给出了其地震破... 详细信息

为了分析尼泊尔地震中山区公路沿线自建民居的震害,在对加德满都-樟木口岸公路沿线民居震害调查的基础上,详细介绍了框架结构和砌体结构自建民居的特点,按照地震直接灾害和次生灾害,总结了这2种自建民居结构的震害特征,给出了其地震破坏比例.框架结构基本完好的比例是砌体结构的3倍多,而中等破坏、严重破坏和毁坏的比例约为砌体结构的1/2.根据震害调查和统计分析,得到以下结论:自建框架结构虽未经过正规设计,不满足尼泊尔建筑规范的相关要求,施工质量也比较欠缺,但破坏程度小于自建砌体结构;随公路海拔的升高,沿线民居的震害程度有加重的趋势;山区地震导致的次生灾害对沿线民居建筑的破坏比较严重.

关键词：尼泊尔地震震害调查公路框架结构砌体结构地震次生灾害掉层结构