检索结果-南通市图书馆

Photonics Research 2016年第6期4卷 257-261页

作者： Junfei Xia samuel serna Weiwei Zhang Laurent Vivien éric Cassan Centre de Nanosciences et de Nanotechnologies UMR 9001 (CNRS/Université Paris-Sud)Université Paris-Saclay Laboratoire Charles Fabry Institut d’Optique CNRS Université Paris-Sud

We investigate in this paper the influence of slow light on the balance between the Kerr and two-photon absorption(TPA) processes in silicon slotted hybrid nonlinear waveguides. Three typical silicon photonic waveguide geometries are studied to estimate the influence of the light slow-down factor on the mode field overlap with the silicon region, as well as on the complex effective nonlinear susceptibility. It is found that slotted photonic crystal modes tend to focalize in their hollow core with increasing group index(n_G) values. Considering a hybrid integration of nonlinear polymers in such slotted waveguides, a relative decrease of the TPA process by more factor of 2 is predicted from n_G=10 to n_G=50. As a whole, this work shows that the relative influence of TPA decreases for slotted waveguides operating in the slow light regime, making them a suitable platform for third-order nonlinear optics.

关键词： mode Hybrid silicon slotted photonic crystal waveguides:how does third order nonlinear performance scale with slow light

Large group-index bandwidth product empty core slow light photonic crystal waveguides for hybrid silicon photonics

在线全文

学校读者我要写书评

暂无评论

Frontiers of Optoelectronics 2014年第3期7卷 376-384页

作者： Charles CAER Xavier LE ROUX samuel serna Weiwei ZHANG Laurent VIVIEN Eric CASSAN Institut d'Electronique Fondamentale University Paris-Sud CNRS UMR 8622 Bat. 220 91405 Orsay Cedex France

This paper investigates the slow light propaga- tion in silicon on insulator wide slot photonic crystal waveguides （PCWs）. Two design schemes are presented, relying on the dispersion engineering of hole lattice and slot, respectively. Mode patterns and band diagrams are calculated by 3D-plane wave expansion method. Then, coupling and slow light propagations are modeled using finite difference time domain method in a full Mach- Zehnder interferometer （MZI）. Results show high amplitudes interference fringes and high coupling efficiencies. Fabrication and measurement of devices lead to slow light propagation with group indices above 50, while multiple scattering and localized modes near the band edge also observed. This study provides insights for losses in hollow core slot high group index waveguides.

关键词： silicon photonics photonic crystals (PC) slot waveguides slow waves

Mode selection and dispersion engineering in Bragg-like slot photonic crystal waveguides for hybrid light-matter interactions

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2018年第1期9卷 54-60页

作者： samuel serna weiwei zhang thi hong cam hoang carlos alonso-ramos delphine marris-morini laurent vivien eric cassan Centre de Nanosciences et de Nanotechnologies UMR 9001 (CNRS/Universite Paris-Sud) Universite Paris-Saclay 91405 Orsay France

We introduce a family of slot photonic crystal waveguides(SPh CWs) for the hybrid integration of low-index active materials in silicon photonics with energy-confinement factors of ~30% in low-index regions. The proposed approach, which is based on a periodic indentation of the etched slot in the middle of the SPh CW, makes it possible to reconcile a simultaneously narrow and wide slot for exploiting the two modes of even symmetry of a SPh CW. The resulting mode-selection mechanism allows a flexible choice of the modes to be used. Furthermore,the proposed structure offers tremendous flexibility for adjusting the dispersive properties of the slot-confined modes, in particular of their slow-light effects. Flat band slow light in a bandwidth of about 60 nm with a group velocity dispersion factor jβ_2 j below 1 ps^2∕mm is numerically demonstrated by this approach, corresponding to a normalized delay bandwidth product of around 0.4. These results, obtained from hollow-core periodic waveguides that are directly designed in view of hybrid integration of active materials in mechanically robust structures(not based on free-standing membranes) could pave the way for the realization of on-chip slow-light bio-sensing,active hybrid-silicon optoelectronic devices, or all-optical hybrid-silicon nonlinear functionalities.

关键词：光子晶体波导通讯技术发展现状

Highly efficient fiber to Si waveguide free-form coupler for foundry-scale silicon photonics

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2024年第5期12卷 1055-1066页

作者： LUIGI RANNO JIA Xu BRIAN SIA COSMIN POPESCU DREW WENINGER samuel serna SHAOLIANG YU LIONEL C.KIMERLING ANURADHA AGARWAL TIAN GU JUEJUN HU Department of Materials Science&Engineering Massachusetts Institute of TechnologyCambridgeMassachusetts 02139USA Centre for Micro-&Nano-Electronics(CMNE) Nanyang Technological UniversitySingapore 639798Singapore Department of Physics Photonics and Optical EngineeringBridgewater State UniversityBridgewaterMassachusetts 02324USA Zhejiang Laboratory Hangzhou 311100China Materials Research Laboratory Massachusetts Institute of TechnologyCambridgeMassachusetts 02139USA

As silicon photonics transitions from research to commercial deployment,packaging solutions that efficiently couple light into highly compact and functional sub-micrometer silicon waveguides are imperative but remain *** 220 nm silicon-on-insulator(SOI)platform,poised to enable large-scale integration,is the most widely adopted by foundries,resulting in established fabrication processes and extensive photonic component *** development of a highly efficient,scalable,and broadband coupling scheme for this platform is therefore of paramount *** two-photon polymerization(TPP)and a deterministic free-form micro-optics design methodology based on the Fermat’s principle,this work demonstrates an ultraefficient and broadband 3-D coupler interface between standard SMF-28 single-mode fibers and silicon waveguides on the 220 nm SOI *** coupler achieves a low coupling loss of 0.8 dB for the fundamental TE mode,along with 1 dB bandwidth exceeding 180 *** broadband operation enables diverse bandwidthdriven applications ranging from communications to ***,the 3-D free-form coupler also enables large tolerance to fiber misalignments and manufacturing variability,thereby relaxing packaging requirements toward cost reduction capitalizing on standard electronic packaging process flows.

关键词： fiber waveguide enable

Nonlinear optical properties of integrated GeSbS chalcogenide waveguides

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2018年第5期6卷 I0062-I0067页

作者： samuel serna HONGTAO LIN CARLOS ALONSO-RAMOS ANUPAMA YADAV XAVIER LE ROUX KATHLEEN RICHARDSON ERIC CASSAN NICOLAS DUBREUIL JUEJUN HU LAURENT VIVIEN Centre de Nanosciences et de Nanotechnologies (C2N) CNRS Univ.Paris-Sud Université Paris SaclayC2N Orsay Laboratoire Charles Fabry Institut d'Optique Graduate SchoolCNRS Université Paris Saclay Department of Materials Science and Engineering Massachusetts Institute of Technology-MIT College of Optics and Photonics-CREOL University of Central Florida

In this paper, we report the experimental characterization of highly nonlinear GeSbS chalcogenide glass waveguides. We used a single-beam characterization protocol that accounts for the magnitude and sign of the real and imaginary parts of the third-order nonlinear susceptibility of integrated Ge23Sb7S70 （GeSbS） chalcogenide glass waveguides in the near-infrared wavdength range at λ = 1580 nm. We measured a waveguide nonlinear parameter of 7.0 4- 0.7 W-1 · m-1, which corresponds to a nonlinear refractive index of n2 =（0.93 ± 0.08） ×10-18 m2/W, comparable to that of silicon, but with an 80 times lower two-photon absorption coefficient βTPA = （0.010± 0.003） cm/GW, accompanied with linear propagation losses as low as 0.5 dB/cm. The outstanding linear and nonlinear properties of GeSbS, with a measured nonlinear figure of merit FOM TPA = 6.0 ± 1.4 at λ = 1580 nm, ultimately make it one of the most promising integrated platforms for the realization of nonlinear functionalities.

关键词： Nonlinear optical properties integrated GeSbS chalcogenide waveguides

Third-order nonlinear optical susceptibility of crystalline oxide yttria-stabilized zirconia

在线全文

学校读者我要写书评

暂无评论

Photonics Research 2020年第2期8卷 110-120页

作者： GUILLAUME MARCAUD samuel serna KARAMANIS PANAGHIOTIS CARLOS ALONSO-RAMOS XAVIER LE ROUX MATHIAS BERCIANO THOMAS MAROUTIAN GUILLAUME AGNUS PASCAL AUBERT ARNAUD JOLLIVET ALICIA RUIZ-CARIDAD LUDOVIC LARGEAU NATHALIE ISAC ERIC CASSAN SYLVIA MATZEN NICOLAS DUBREUIL MICHEL RERAT PHILIPPE LECOEUR LAURENT VIVIEN Centre de Nanosciences et Nanotechnologies(C2N) Université-Paris-SudCNRS UMR 9001Universite Paris-SaclayOrsay 91405France Department of Materials Science and Engineering Massachusetts Institute of TechnologyCambridgeMasschusetts 02139USA Department of Physics Bridgewater State UniversityBridgewaterMassachusetts 02325USA Institut des Sciences Analytiques et de Physico-Chimie pour l’Environnement et les Matériaux CNRSUniversite de Pau et des Pays de l’Adour64053 Pau CedexFrance Laboratoire Charles Fabry Institut d’Optique Graduate SchoolCNRSUniversitéParis-Saclay91127 Palaiseau CedexFrance LP2N Institut d’Optique Graduate SchoolCNRSUniv.Bordeaux33400 TalenceFrance

Nonlinear all-optical technology is an ultimate route for the next-generation ultrafast signal processing of optical communication *** nonlinear functionalities need to be implemented in photonics,and complex oxides are considered as promising candidates due to their wide panel of *** this context,yttria-stabilized zirconia(YSZ)stands out,thanks to its ability to be epitaxially grown on silicon,adapting the lattice for the crystalline oxide family of *** report,for the first time to the best of our knowledge,a detailed theoretical and experimental study about the third-order nonlinear susceptibility in crystalline *** self-phase modulation-induced broadening and considering the in-plane orientation of YSZ,we experimentally obtained an effective Kerr coefficient of n2YSZ=4.0±2×10^-19 m^2·W^-1 in an 8%(mole fraction)YSZ *** agreement with the theoretically predicted n2YSZ=1.3×10^-19 m^2·W^-1,the third-order nonlinear coefficient of YSZ is comparable with the one of silicon nitride,which is already being used in nonlinear *** promising results are a new step toward the implementation of functional oxides for nonlinear optical applications.

关键词： materials. nonlinear crystalline