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Mixed-Mode Device Modeling of DGMOS RF Oscillators

Circuits and Systems 2014年第1期5卷 18-26页

作者： Mourad Bella saida latreche Samir Labiod Christian Gontrand Electronic Department of Engineering and Technology University Constantine 1 Constantine Algeria Institute of Nanotechnology of Lyon (INL) University of Lyon Lyon France

A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest of the considered circuit is governed by Kirchhoff’s laws. The Linear Time Variant (LTV) model of phase noise is based on the Impulse Sensitivity Function of the Colpitts Oscillator which describes carefully the sensitivity of an oscillator to any impulse current injection in any node of the circuit. Finally, we improve the phase noise modeling, confronting some analytical developments to mixed-mode simulations.

关键词： DGMOS Transistor Colpitts Oscillator Radiofrequency Mixed Mode Simulation ISF Function Noise

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Combined Electromagnetic and Drift Diffusion Models for Microwave Semiconductor Device

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Journal of Electromagnetic Analysis and Applications 2011年第10期3卷 423-429页

作者： Samir Labiod saida latreche Mourad Bella Christian Gontrand 不详

In this work, we present a numerical model to solve the drift diffusion equations coupled with electromagnetic model, where all simulations codes are implemented using MATLAB code software. As first, we present a one-dimensional (1-D) PIN diode structure simulation achieved by solving the drift diffusion model (DDM). Backward Euler algorithm is used for the discretization of the proposed model. The aim is to accomplish time-domain integration. Also, finite different method (FDM) is considered to achieve space-Domain mesh. We introduced an iterative scheme to solve the obtained matrix systems, which combines the Gummel’s iteration with an efficient direct numerical UMFPACK method. The obtained solutions of the proposed algorithm provide the time and space distribution of the unknown functions like electrostatic potential and carrier’s concentration for the PIN diode. As second case, the finite-difference time-domain (FDTD) technique is adopted to analyze the entire 3-D structure of the stripline circuit including the lumped element PIN diode. The microwave circuit is located in an unbounded medium, requiring absorbing boundaries to avoid nonphysical reflections. Active device results were presented and show a good agreement with other reference. Electromagnetic results are qualitatively in agreement with other results obtained using SILVACO-TCAD.

关键词： Drift-Diffusion Model GUMMEL’s Method Backward Euler MAXWELL’s Equation 3-D FDTD Method

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Insights into Three-Dimensional Radiofrequency Circuits Connections

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Computer Technology and Application 2011年第6期2卷 456-470页

作者： Rabah Dahmani Olivier Valorge Fengyuan Sun Samir Labiod Francis Calmon saida latreche Ian O＇Connor Christian Gontrand INL CNRS-UMR5270 INSA-Lyon Universite de Lyon Villeurbanne F-69621 France R3 Logic 50 chemin de l ＇Etoile Monbonnot-Saint-Martin 38330 France Laboratoire Hyperfrdquence ＆ Semi-conducteur Ddpartement d＇Electronique Facultd des Sciences de l ＇Ingdnieur Universite Mentouri Constantine 25000 Algeria

The authors state briefly the possibility of various simulators to handle propagation of electromagnetic waves along some interconnections, in 3D RF （Radio Frequency） circuits. The studies are first derived in the time domain： a Finite-Difference Time-Domain method is applied, taking spectra via FFTs （Fast Fourier Transform） as post-processors. Electric and magnetic field distributions, pulse propagations along stripline structures or vias are highlighted. The scattering parameters for various cases are extracted and compared. Some original issue of this work is an insight on crosstalk or shielding phenomena between lines.

关键词： Maxwell's equations radio frequency (RF) numerical methods shielding effects through silicon via.

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