咨询与建议

限定检索结果

文献类型

  • 4 篇 期刊文献

馆藏范围

  • 4 篇 电子文献
  • 0 种 纸本馆藏

日期分布

学科分类号

  • 4 篇 工学
    • 4 篇 材料科学与工程(可...
    • 4 篇 电子科学与技术(可...
    • 1 篇 电气工程
  • 2 篇 理学
    • 2 篇 物理学

主题

  • 2 篇 pure water
  • 2 篇 trapping capacit...
  • 1 篇 solid, soft and ...
  • 1 篇 mos
  • 1 篇 donors
  • 1 篇 solid and soft-f...
  • 1 篇 protonic fermion...
  • 1 篇 proton-ion produ...
  • 1 篇 point-mass posit...
  • 1 篇 point-mass posit...
  • 1 篇 silicon
  • 1 篇 phonon scatterin...
  • 1 篇 dopant impuritie...
  • 1 篇 dopant impurity
  • 1 篇 propagating-and-...
  • 1 篇 ph
  • 1 篇 proton-ion produ...
  • 1 篇 multiple charge ...
  • 1 篇 acceptors

机构

  • 3 篇 department of ph...
  • 2 篇 ctsah associates...
  • 1 篇 department of ph...
  • 1 篇 chinese academy ...
  • 1 篇 american physica...
  • 1 篇 chinese academy ...

作者

  • 2 篇 sah chihtang
  • 2 篇 chihtang sah
  • 2 篇 jie binbin
  • 2 篇 binbin jie
  • 1 篇 tianhui jie

语言

  • 4 篇 英文
检索条件"作者=sah Chihtang"
4 条 记 录,以下是1-10 订阅
排序:
MOS Capacitance-Voltage Characteristics:*** to Enhance the Trapping Capacitance
收藏 引用
Journal of Semiconductors 2012年 第2期33卷 1-9页
作者: Jie Binbin sah chihtang Department of Physics Xiamen UniversityXiamen 361005China CTsah Associates GainesvilleFlorida 32605USA
Low-frequency and High-frequency Capacitance-Voltage(C-V) curves of Silicon Metal-Oxide-Semiconductor Capacitors,showing electron and hole trapping at shallow-level dopant and deep-level generation-recombination -tr... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
MOS Capacitance-Voltage Characteristics:Ⅳ.Trapping Capacitance from 3-Charge-State Impurities
收藏 引用
Journal of Semiconductors 2012年 第1期33卷 1-19页
作者: Jie Binbin sah chihtang Department of Physics Xiamen University Xiamen 361005China CTsah Associates GainesvilleFlorida 32605USA
Metal-Oxide-Semiconductor Capacitance-Voltage (MOSCV) characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped, n-doped, p- doped an... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Studies of Water V. Five Phonons in Protonic Semiconductor Lattice Model of Pure Liquid Water
收藏 引用
Journal of Semiconductors 2017年 第7期38卷 1-17页
作者: Binbin Jie chihtang sah Department of Physics Xiamen University Xiamen 361005 China Chinese Academy of Sciences Beijing 100864 China
We report physics based confirmation(~1% RMS deviation), by existing experimental data, of protonprohol(proton-hole) ion product(p H) and mobilities in pure liquid water(0-100℃, 1-atm pressure) anticipated fr... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Studies of Water Ⅵ. One-Band,Two-Band and Three-Band,Trappy,Protonic,Semiconductor Lattice Models for Pure Liquid Water
收藏 引用
Journal of Semiconductors 2018年 第11期39卷 1-7页
作者: Binbin Jie Tianhui Jie chihtang sah Department of Physics Xiamen University American Physical Society US Institution applied Department of Physics Xiamen University Chinese Academy of Sciences
This report adds three protonic semiconductor models to explain the "abnormally" high electrical conductivity of pure liquid water characterized by the three industrial consensus parameters, the ion product(or pH)and ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论