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一个小型mos串联存贮器的初步实践

北京大学学报(自然科学版) 1975年第2期 101-112+151页

作者：北京大学《mos串联存貯器》毕业实践小组

前言近年来,金属——氧化物——半导体集成电路(简称mos集成电路)有了很大的发展,由于它具有制造工艺简单,集成度高,功耗小,可靠性强等优点,因此正日益广泛地被应用到计算机里。在毕业实践中,我组十一名工农兵学员承担了用mos动态移位... 详细信息

前言近年来,金属——氧化物——半导体集成电路(简称mos集成电路)有了很大的发展,由于它具有制造工艺简单,集成度高,功耗小,可靠性强等优点,因此正日益广泛地被应用到计算机里。在毕业实践中,我组十一名工农兵学员承担了用mos动态移位寄存器做小型串联存贮器以取代DJs——11机的磁芯宽行存贮器的研究任务,在三个

关键词： mos 移位寄存器磁芯宽行打印机

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一个小型mos串联存贮器的初步实践

清华大学学报(自然科学版) 1975年第2期 101-112页

作者：北京大学《mos串联存贮器》毕业实践小组

This artical describes a small-scale series memory, adopting mos dynamic shift register integrated circuit and used as the memory in the line printer of DJs-11 (word length 7 bit, 160 words with read time of 3 us and write time of 63 μs). It contains a discussion of input, output converting circuit and clock pulse circuit and the results of the test. It also roughly presents the consideration of Two plans of the logical design. The model test and the result of the preliminary use on the second DJs11 have shown that this mos series memory is workable.

关键词： mos 移位寄存器存贮器磁芯循环移位转换电路存储器宽行打印机

Multi objective prediction and optimization of control parameters in the milling of aluminium hybrid metal matrix composites using ANN and Taguchi-grey relational analysis

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Defence Technology（防务技术） 2019年第4期15卷 545-556页

作者： s.Ajith Arul Daniel R.Pugazhenthi R.Kumar s.Vijayananth Department of Mechanical Engineering Vels Institute of ScienceTechnology and Advanced Studies

This study aims to optimize the input parameters such as mass fraction and particle size of siC along with depth of cut,feed and cutting speed in the milling of Al5059/siC/*** hybrid metal matrix composites are generally fabricated by reinforcing of different sizes(10,20,40 μm)of siC with aluminium at a different levels(5%,10%& 15%)whereas the mos2 addition is fixed as 2%.The effect of each control factor on response variables are analyzed through Taguchi s/N ratio ***,the most significant method for prediction of response parameters is satisfied by ANN model than the regression *** of variance(ANOVA)results envisage that mass fraction of siC,feed rate is the most domineering factor on response variable.

关键词： silicon carbide Temperature surface roughness Cutting forces Artificial neural network Grey relational analysis

Molybdenum disulfide and magnesium oxide nanoparticle performance on micropolar Cattaneo-Christov heat flux model

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Applied Mathematics and Mechanics(English Edition) 2021年第4期42卷 541-552页

作者： M.G.REDDY s.A.sHEHZAD Department of Mathematics Acharya Nagarjuna University CampusOngole 523001Andhra PradeshIndia Department of Mathematics COMSATS University IslamabadSahiwal 57000Pakistan

This article intends to illustrate the Darcy flow and melting heat transmission in micropolar *** major advantage of micropolar fluid is the liquid particle rotation through an independent kinematic vector named the microrotation *** novel aspects of the Cattaneo-Christov(C-C)heat flux and Joule heating are incorporated in the energy transport *** different nanoparticles,namely,mos2 and MgO,are suspended into the *** governing partial differential equations(PDEs)of the prevailing problem are slackening into ordinary differential expressions(ODEs)via similarity *** resulting mathematical phenomenon is illustrated by the implication of fourth-fifth order Runge-Kutta-Fehlberg(RKF)*** fluid velocity and temperature distributions are deliberated by using graphical phenomena for multiple values of physical *** results are displayed for both molybdenum disulphide and magnesium oxide nanoparticles.A comparative benchmark in the limiting approach is reported for the validation of the present *** is revealed that the incrementing material constraint results in a higher fluid velocity for both molybdenum disulphide and magnesium oxide nanoparticle situations.

关键词： micropolar fluid Cattaneo-Christov(C-C)heat flux molybdenum disulphide nanoparticle melting effect numerical solution

Using mixed integer programming and airborne laser scanning to generate forest management units

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Journal of Forestry Research 2022年第1期33卷 217-226页

作者： Adrián Pascual sándor FTóth Forest Research Centre School of AgricultureUniversity of LisbonTapada da Ajuda1349-017 LisboaPortugal school of Forest sciences University of Eastern FinlandP.O.Box 11180101 JoensuuFinland school of Environmental and Forest sciences University of WashingtonSeattleWAUSA

Airborne laser scanning(ALs)has been widely applied to estimate tree and forest attributes,but it can also drive the segmentation of forest *** algorithms are the dominant technique in segmentation but spatial optimization using exact methods remains *** study presents a novel approach to segmentation based on mixed integer programming to create forest management units(FMUs).This investigation focuses on using raster information derived from ALs *** mainstream clustering algorithms were compared to the new MIP formula that simultaneously accounts for area and adjacency restrictions,FMUs size and homogeneity in terms of vegetation *** optimal problem solution was found when using less than 150 cells,showing the problem formulation is *** results for MIP were better than for the clustering algorithms;FMUs were more compact based on the intravariation of canopy height and the variability in size was *** MIP model allows the user to strictly control the size of FMUs,which is not possible in heuristic optimization and in the clustering algorithms *** definition of forest management units based on remote sensing data is an important operation and our study pioneers the use of MIP ALs-based optimal segmentation.

关键词： segmentation Precision forestry Optimization Mathematical programming Airborne laser scanning

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八位MCU指令在CPU中的控制与执行

微电子技术 1998年第3期26卷 37-41页

作者：邵智勇中国华晶电子集团mos设计所无锡214061

本文以MOTOROLA8－bitMCUme68hc05为例，讨论指令在CPU中的执行原理和实现方法，从原理上探究单片机的设计思想。

关键词：指令 CPU 控制执行

Reversible Logic Based mos Current Mode Logic Implementation in Digital Circuits

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Computers, Materials & Continua 2022年第2期70卷 3609-3624页

作者： s.sharmila Devi V.Bhanumathi Department of Electronics and Communication Engineering Sri Ramakrishna Engineering CollegeCoimbatoreIndia Department of Electronics and Communication Engineering Anna UniversityRegional CampusCoimbatoreIndia

Now a days,mos Current Mode Logic(MCML)has emerged as a better alternative to Complementary Metal Oxide semiconductor(Cmos)logic in digital *** works have only traditional logic gates that have issues with information *** logic is incorporated with mos Current Mode Logic(MCML)in this proposed work to solve this problem,which is used for multiplier design,D Flip-Flop(DFF)and *** minimization of power and area is the main aim of the *** reversible logic,the count of outputs and inputs is retained as the same value for creating one-to-one mapping.A unique output vector set can be generated for each input vector set and information loss is also *** reversible MCML based multiplier,reversible logic full adder is utilized to minimize the area and power.D flip-flops based on reversible MCML are often designed to store information that is then combined to form a reversible MCML based *** proposed reversible MCML multiplier attains average power of 0.683 mW,Reversible MCML based DFF achieves 0.56μW and Reversible MCML based 8-bit register attains 04.04μ*** result shows that the proposed Reversible MCML based multiplier,Reversible MCML based D flip-flop and ReversibleMCML based register achieves better performance in terms of current,power dissipation,average power and area.

关键词： mos current mode logic reversible logic multiplier D flip-flop and register

sPICE compatible analytical electron mobility model for biaxial strained-si-mosFETs

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Journal of semiconductors 2011年第5期32卷 36-41页

作者： Amit Chaudhry J.N.Roy s.sangwan UIET Panjab UniversityChandigarhIndia solar semiconductro Pvt.Ltd HyderabadIndia

This paper describes an analytical model for bulk electron mobility in strained-si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor （mos） devices. The results have also been compared with numerically reported results and show good agreement.

关键词： mobility siGe strained-si phonon surface roughness columbic

One-step fabrication of ultrathin layered 1T@2H phase mos2 with high catalytic activity based counter electrode for photovoltaic devices

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Journal of Materials science & Technology 2020年第16期47卷 94-101页

作者： K.silambarasan J.Archana s.Harish M.Navaneethan R.sankar Ganesh s.Ponnusamy C.Muthamizhchelvan K.Hara Functional Materials and Energy Devices Laboratory Department of Physics and NanotechnologySRM Institute of Science and TechnologyKattankulathur603203India Nanotechnology Research Center(NRC) Faculty of Engineering and TechnologySRM Institute of Science and TechnologyKattankulathur603203India Research Institute of Electronics Shizuoka University3-5-1 JohokuNaka-KuHamamatsuShizuoka432-8011Japan Graduate school of science and Technology Shizuoka University3-5-1 JohokuNaka-KuHamamatsuShizuoka432-8011Japan

The metallic phase of molybdenum disulfide(M-mos2)and semiconductor phase of molybdenum disulfide(s-mos2)was synthesized by hydrothermal method,using cetyltrimethylammonium bromide(CTAB)as a *** structural and elemental composition confirmed the formation of M-mos2 and *** the morphological analysis layered nanosheets with an inter-layered distance of 0.62 nm for M-mos2 and 0.95 nm for s-mos2 was ***-transform infrared(FT-IR)spectral analysis was used to investigate the existence of CTAB functional *** peak at 885 cm-1 attributed to the CH3 bond which confirmed the presence of CTAB in the *** anodic and cathodic peak separation(Epp)values of the counter electrode(CE)has showed at 468.28 mV(M-mos2)and 540.87 mV(s-mos2).The M-mos2 thin film shows higher catalytic activity when compared to s-mos2 due to more active sites and electronic *** power conversion efficiency of M-mos2 CE based device exhibits higher efficiency compared to s-mos2 CE based device.

关键词： M-mos2 s-mos2 Layered nanosheet Catalytic Power conversion