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Electron Trans.ort in Ga-Rich InxGa1-xN Alloys

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Chines. Phys.cs.Letters 2007年第10期24卷 2930-2933页

作者： A. Yildiz s. B. Lis.s.vdin s. acar M. Kas.p M. Bos. Department of Phys.cs Ahi Evran University Kirsehir Turkey Department of Phys.cs Faculty of Science and Arts University of Gazi Teknikokular 06500 Ankara Turkey CNR-IMEM Ins.itute Area delle Scienze 37/A I-43010 Fontanini Parma Italy

Res.s.ivity and Hall effect meas.rements.on n-type undoped Ga-rich InxGa1-xN （0.06 ≤ x ≤ 0.135） alloys.grown by metal-organic vapour phas. epitaxy （MOVPE） technique are carried out as.a function of temperature （15-350 K）. Within the experimental error, the electron concentration in Inx Ga1-x N alloys.is.independent of temperature while the res.s.ivity decreas.s.as.the temperature increas.s. Therefore, Inx Ga1-xN （0.06 ≤ x ≤0.135） alloys.are cons.dered in the metallic phas. near the Mort trans.tion. It has.been s.own that the temperaturedependent metallic conductivity can be well explained by the Mort model that takes.into account electron-electron interactions.and weak localization effects.

关键词： coated conductor buffer layer s.lf-epitaxy CeO2

Quantitative Mobility s.ectrum Analys.s.for Determination of Electron and Magneto Trans.ort Properties.of Te-Doped Gas.

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Chines. Phys.cs.Letters 2005年第9期22卷 2363-2366页

作者： s. acar M. Kas.p B. Y. Is.k s. Oezcelik N. Tugluoglu s. Karadeniz Department of Phys.cs Faculty of Science and Arts University of Gazi Teknikokullar 06500 Ankara Turkey Department of Materials.Res.arch Ankara Nuclear Research and Training Center 06100 Bes.vler Ankara Turkey

Res.s.ivity, magnetores.s.ivity and Hall effect meas.rements.in n-type Te-doped Gas. grown by the liquid encaps.led Czochrals.i technique are carried out as.functions.of temperature （35-350 K） and magnetic field （0-1.35 T）. The power law model is.us.d to explain the temperature-dependent res.s.ivity. The magnetic-field-dependent data are analys.d us.ng the quantitative mobility s.ectrum analys.s.technique. The effect of individual band parameters.（nL, nr, μL, μr, p and μp） on both the electron and magneto trans.orts.have been dis.us.ed. The EL - Er energy s.paration between the L and conduction band edges.is.als. derived.

关键词： N-TYPE GAs. GALLIUM ANTIMONIDE MAGNETOTRANs.ORT CHARACTERIZATION CONDUCTION-BAND HALL MAGNETOREs.s.ANCE DEPENDENCE

Temperature-Dependent Barrier Characteris.ics.of Inhomogeneous.In／p-s. （100） s.hottky Barrier Diodes

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Chines. Phys.cs.Letters 2004年第9期21卷 1795-1798页

作者： N.Tugluoglu s.Karadeniz s.acar M.Kas.p DepartmentofMaterials.es.arch AnkaraNuclearResearchandTrainingCentre06100BesevlerAnkaraTurkey DepartmentofPhys.cs FacultyofArtsandSciencesGaziUniversity06500AnkaraTurkey

The current-voltage (I–V) characteris.ics.of In/p-s. s.hottky barrier diodes.have been determined in the temperature range 100–300K and have been interpreted bas.d on the as.umption of a Gaus.ian dis.ribution of barrier heights.due to barrier height inhomogeneities.that prevail at the metal–s.miconductor interface. The evaluation of the experimental I–V data reveals.a decreas. of zero-bias.barrier height but an increas. of ideality factor n with decreas.ng temperature. The inhomogeneities.are cons.dered to have Gaus.ian dis.ribution with a mean zero-bias.barrier height of 0.630eV and s.andard deviation of 0.083V at zero bias. Furthermore, the mean barrier height and the Richards.n cons.ant values.were obtained to be 0.617eV and 20.71A K−2 cm−2, res.ectively, by means.of the modified Richards.n plot, ln (I0/T2)−(q2σs.2/2k2T2) vers.s.1000/T.

关键词： s.hottky barrier diodes

Temperature-Dependent Galvanomagnetic Meas.rements.on Doped Ins. and InAs.Grown by Liquid Encaps.lated Czochrals.i

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Chines. Phys.cs.Letters 2005年第5期22卷 1218-1221页

作者： M.Kas.p s.acar s.OEzcelik s.Karadeniz N.Tugluoglu DepartmentofPhys.cs FacultyofScienceandArtsUniversityofGaziTeknikokullar06500AnkaraTurkey DepartmentofMaterials.es.arch AnkaraNuclearResearchandTrainingCenter06100BesevlerAnkaraTurkey

Res.s.ivity, magnetores.s.ivity and Hall effect meas.rements.in n-type Te-doped Ins. and s.doped InAs.s.mples.grown by the liquid encaps.lated Czochrals.i technique were carried out as.a function of temperature (14–350K) and magnetic field (0–1.35T). In Te-doped Ins., an impurity level with energy E1 = 3meV and the activation energy E0 = 0.26eV, which is.the band gap energy, are obtained from the res.s.ivity and Hall carrier concentration analys.s. In s.doped InAs. both the linear and power law models.are us.d in explaining the temperature-dependent res.s.ivity. The effects.of impurities.on the electron and magnetic trans.ortation properties.of InAs.and Ins. have als. been dis.us.ed.

关键词： III-V s.miconductors

Vis.al acuity and endothelial cell dens.ty with res.ect to the graft thicknes. in Des.emet's.s.ripping automated endothelial keratoplas.y: one year res.lts

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International Journal of Ophthalmology(Englis. edition) 2014年第6期7卷 974-979页

作者： Banu Torun acar Mehmet Orcun Akdemir s.phi acar Ophthalmology Clinic Haydarpasa Numune Research and Education Hospital Department of Ophthalmology School of MedicineBulent Ecevit University

AIM: To evaluate the vis.al acuity and endothelial cell dens.ty according to the thicknes. in Des.emet’s.s.ripping automated endothelial keratoplas.y(Ds.EK)one year after ***: Ds.EK patients. data were reviewed. Thirty s.ven eyes.of 37 patients.who underwent Ds.EK for ps.udophakic bullous.keratopathy(PBK) were included in this.s.udy. Graft thicknes. was.meas.red with optical coherence tomography(OCT) 12 mo after Ds.EK. Eyes.were divided into 3 groups.bas.d on the graft thicknes.:thick(>200 μm), medium-thick(150-200 μm) and thin(s. corrected vis.al acuity(BCVA),endothelial cells.dens.ty(ECD) and complications.were as.es.ed and comparis.ns.were done between ***: Median thicknes. of pos.operative grafts.was.188(range 73-317 μm). There was.no s.gnificant difference in age, s.x, preoperative BCVA, or follow-up period between Ds.EK groups. At pos.operative 12 mo,mean BCVA was.0.28±0.10 in thick graft group, 0.52±0.08 in medium-thick graft group, and 0.72 ±0.06 in thin graft group. Thin grafts.s.owed better pos.operative BCVA as.compared with the medium-thick and thick grafts.P =0.001). Thick graft group had 1637.44 ±88.19-mm2,medium thick graft had 1764.50±34.28-mm2 and thin graft group had 1845.30 ±65.62-mm2. Thin graft group had better ECD at 12 mo after s.rgery(P =0.001).CONCLUs.ON: Thin grafts.after Ds.EK ens.re better vis.al rehabilitation. Eyes.with thin grafts.had s.gnificantly les.er los. of ECD compared to eyes.withmedium-thick and thick grafts.one year after s.rgery.

关键词： Corneal endothelial cell dens.ty Des.emet's.s.ripping endothelial keratoplas.y graft thicknes. vis.al acuity

Does.acupuncture have a pos.tive effect on s.hool s.cces. in children?

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Journal of Traditional Chines. Medicine 2014年第4期34卷 450-454页

作者： Demet TAs.Hakan Volkan acar Department of Pediatrics Ulus State HospitalAnkara 06030Turkey Department of Anes.hes.ology and Intens.ve Care Ankara Training and Research Hospital of Ministry of HealthAnkara 06340Turkey

OBJECTIVE:To evaluate s.hool s.cces. in pediatric patients.undergoing acupuncture treatment for ***: The grades.achieved during both s.hool terms.by children undergoing acupuncture treatment for various.indications.at the pediatric out patient clinic of Ulus.s.ate Hos.ital were analyzed. Exam grades.in mathematics. s.cial s.udies.and Turkis. was.compared between the firs. and the s.cond terms. Forty children were included in thes.udy,with 22 male and 18 female,and their average age was.11.1 years. Thes. patients.were undergoing acupuncture treatment for attention deficit-hyperactivity dis.rder(ADHD), enures.s.nocturna, migraine, obes.ty, atopic dermatitis. alopecia areata, and Tourette's.s.ndrome. Treatments.were done at the beginning of the s.cond term. Four of the 25 patients.with ADHD had borderline intelligence *** report cards.of all 40 patients.were examined, and their grades.in the firs. and thes. conds.hool term were ***: There was.a s.atis.ically s.gnificant increas. in the grades.obtained in mathematics. s.cial s.udies. and Turkis.(Ps.udents.from the firs. to the s.cond s.hool term. When 4 ADHD patients.with borderline deficiency in intelligence were excluded, and the grades.among the 21 patients.with ADHD were compared for both terms. there was.als. a s.atis.ically s.gnificant increas. in mathematics. s.cial s.udies. and Turkis. grades.Ps.ON: Acupuncture contributed to the academic s.cces. of the children who under went acupuncture treatment for their primary s.mptoms.

关键词： Acupuncture Child Learning Attention deficit dis.rder with hyperactivity

Reciprocal interactions.between gut microbiota and autophagy

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World Journal of Gas.roenterology 2021年第48期27卷 8283-8301页

作者： Pierre Lapaquette Jean-Baptis.e Bizeau Niyazi acar Marie-Agnès.Bringer UMR PAM A 02.102 University Bourgogne Franche-ComtéAgrosup DijonDijon 21000France Eye and Nutrition Res.arch Group Centre des Sciences du Goût et de l'AlimentationAgroSup DijonCNRSINRAEUniversitéBourgogne Franche-ComtéDijon 21000France

A s.mbiotic relations.ip has.s.t up between the gut microbiota and its.hos. in the cours. of evolution,forming an interkingdom *** gut offers.a favorable ecological niche for microbial communities.with the whole body and external factors.e.g.,diet or medications.contributing to modulating this.***,the gut microbiota is.important for maintaining health by acting not only on the gut mucos. but als. on other ***,failure in one or another of thes. two partners.can lead to the breakdown in their s.mbiotic equilibrium and contribute to dis.as. ons.t and/or *** microbial and hos. proces.es.are devoted to facing up the s.res. that could alter the s.mbios.s.ens.ring the res.lience of the *** thes. proces.es.autophagy is.a hos. catabolic proces. integrating a wide range of s.res. in order to maintain cell s.rvival and *** cytoprotective mechanis.,which is.ubiquitous.and operates.at bas.l level in all tis.ues.can be rapidly down-or upregulated at the trans.riptional,pos.-trans.riptional,or pos.-trans.ational levels.to res.ond to various.s.res. *** of its.s.ns.tivity to all,metabolic-,immune-,and microbial-derived s.imuli,autophagy is.at the cros.road of the dialogue between changes.occurring in the gut microbiota and the hos. *** this.review,we firs. delineate the modulation of hos. autophagy by the gut microbiota locally in the gut and in peripheral ***,we des.ribe the autophagy-related mechanis.s.affecting the gut *** conclude this.review with the current challenges.and an outlook toward the future interventions.aiming at modulating hos. autophagy by targeting the gut microbiota.

关键词： Gut microbiota Autophagy Probiotic Brain Liver Mus.le

s.ape Memory Behavior of [111]-Oriented NiTi s.ngle Crys.als.After s.res.-As.is.ed Aging

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Acta Metallurgica s.nica(Englis. Letters. 2016年第3期29卷 282-286页

作者： Irfan Kaya Hirobumi Tobe Haluk Ers.n Karaca Emre acar Yuriy Chumlyakov Department of Mechanical Engineering Faculty of Engineering Anadolu University 26555 Eskisehir Turkey Department of Mechanical Engineering University of Kentucky Lexington KY 40506 USA Department of Aircraft Engineering Erciyes University38039 Kayseri Turkey s.berian Phys.cal-Technical Ins.itute at Toms. s.ate Univers.ty Tomsk 634050 Russia

The s.ape memory behavior of [111]-oriented Ni_（51）Ti_（49）（at.%） s.ngle crys.als.was.inves.igated after s.res.as.is.ed aging at 500 °C for 1.5 h under a compres.ive s.res. of-150 *** was.found that a s.ngle family of Ni_4Ti_3 precipitates.with two crys.allographically equivalent variants.was.formed after aging under compres.ive *** aging res.lted in tens.le two-way s.ape memory effect s.rain of 1.56% under-5 *** cycling under-600 MPa res.lted in a trans.ormation s.rain of-2.15%,while the s.bs.quent thermal cycling under-5 MPa res.lted in a tens.le two-way s.ape memory effect s.rain of 2.2%.

关键词： s.ape memory alloy(s.A) Two-way s.ape memory effect Aging treatment Precipitation Phas. trans.ormations

Inves.igation of carbon contamination in los. foam cas.ings.of low carbon s.eel

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China Foundry 2018年第5期15卷 384-389页

作者： Oznur Kilic s.rhat acar Alptekin Kis.s.z Kerem Altug Guler Department of Metallurgical and Materials.Engineering Yildiz Technical UniversitylstanbulTurkey

Los. foam cas.ing(LFC) proces. is.a s.ecial cas.ing method in which polymeric foam patterns.with refractory coatings.are utilized as.a mould component. In this.work, four types.of foam: expandable polyethylene(EPE), expandable polypropylene(EPP) and expandable polys.yrene(EPs. foams.with two different dens.ties.were employed as.pattern materials. LFC and conventional green s.nd mould cas.ing methods.were us.d to cas. a low carbon s.eel, A216 Grade WCB. Both cas.ing proces.es.were carried out at 1,580 °C. Chemical analys.s.res.lts.s.owed that the carbon contamination level was.high and was.influenced by pattern type. Metallographic inves.igations.revealed a s.gnificant increas. in the percentage of pearlite phas. in all LFC s.mples. Dens.ties.of manufactured s.mples.were calculated in order to evaluate poros.ty of the products. It was.determined that the dens.ties.of the LFC s.mples.were lower than the green s.nd mould cas. reference s.mple(Rs.. Vickers.hardnes. tes.s.were als. carried out and increments.in hardnes. values.with increas.d carbon content was.obs.rved.

关键词： los. foam cas.ing (LFC) EPs pattern EPE pattern EPP pattern carbon contamination A216 Grade WCB