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Tunable quantum anomalous Hall effects in ferromagnetic van der Waals heterostructures

National Science Review 2024年第3期11卷 100-107页

作者： Feng Xue Yusheng Hou Zhe Wang Zhiming Xu Ke He ruqian wu Yong Xu Wenhui Duan Beijing Academy of Quantum Information Sciences State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices Center for Neutron Science and Technology School of Physics Sun Yat-sen University State Key Laboratory of Surface Physics Key Laboratory of Computational Physical Sciences and Department of PhysicsFudan University Frontier Science Center for Quantum Information Department of Physics and Astronomy University of California-Irvine Tencent Quantum Laboratory Tencent Technology(Shenzhen)Co.Ltd RIKEN Center for Emergent Matter Science(CEMS) Institute for Advanced Study Tsinghua University

The quantum anomalous Hall effect（QAHE） has unique advantages in topotronic applications, but it is still challenging to realize the QAHE with tunable magnetic and topological properties for building functional devices. Through systematic first-principles calculations, we predict that the in-plane magnetization induced QAHE with Chern numbers C = ±1 and the out-of-plane magnetization induced QAHE with high Chern numbers C = ±3 can be realized in a single material candidate, which is composed of van der Waals（vdW）coupled Bi and MnBi2Te4monolayers. The switching between different phases of QAHE can be controlled in multiple ways, such as applying strain or（weak） magnetic field or twisting the vdW materials. The prediction of an experimentally available material system hosting robust, highly tunable QAHE will stimulate great research interest in the field. Our work opens a new avenue for the realization of tunable QAHE and provides a practical material platform for the development of topological electronics.

关键词： quantum anomalous Hall effect topological quantum phase transition van der Waals heterostructures tunable Chern number high Chern number

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Multifunctional two-dimensional van der Waals Janus magnet Cr-based dichalcogenide halides

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npj Computational Materials 2022年第1期8卷 1126-1131页

作者： Yusheng Hou Feng Xue Liang Qiu Zhe Wang ruqian wu Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices Center for Neutron Science and TechnologySchool of PhysicsSun Yat-Sen University510275GuangzhouChina State Key Laboratory of Low-Dimensional Quantum Physics Department of PhysicsTsinghua University100084BeijingChina Frontier Science Center for Quantum Information 100084BeijingChina State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences(MOE)and Department of Physics Fudan University200433ShanghaiChina Department of Physics and Astronomy University of CaliforniaIrvineCA92697-4575USA

Two-dimensional van der Waals Janus materials and their heterostructures offer fertile platforms for designing fascinating ***,by means of systematic first-principles studies on van der Waals Janus monolayer Cr-based dichalcogenide halides CrYX (Y = S,Se,Te;X = Cl,Br,I),we find that CrSX (X = Cl,Br,I) are the very desirable high T_(C) ferromagnetic semiconductors with an out-of-plane ***,by the benefit of the large magnetic moments on ligand S^(2−) anions,the sought-after large-gap quantum anomalous Hall effect and sizable valley splitting can be achieved through the magnetic proximity effect in van der Waals heterostructures CrSBr/Bi_(2)Se_(3)/CrSBr and MoTe_(2)/CrSBr,***,we show that large Dzyaloshinskii–Moriya interactions give rise to skyrmion states in CrTeX (X = Cl,Br,I) under external magnetic *** work reveals that two-dimensional Janus magnet Cr-based dichalcogenide halides have appealing multifunctionalities in the applications of topological electronic and valleytronic devices.

关键词： dimensional valley effect

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锦叶栾光合特性变化与光合电子传递关键基因KpPetC的克隆及特性分析

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中国细胞生物学学报 2024年第5期46卷 913-927页

作者：鲁海琳吴茹茜安新民林木遗传育种全国重点实验室林木育种与生态修复国家工程中心林木分子设计育种高精尖创新中心林木花卉遗传育种教育部重点实验室树木花卉育种生物工程国家林业和草原局重点实验室生物科学与技术学院北京林业大学北京100083

细胞色素b6f复合体是植物光合电子传递中潜在的限速因子,增强该复合物的活性,将有助于提高植物光合作用的效率,因此开展光合电子传递关键基因的研究具有重要的科学意义。该研究以锦叶栾叶色变异现象为切入点,以栾树及其突变体锦叶栾为材... 详细信息

细胞色素b6f复合体是植物光合电子传递中潜在的限速因子,增强该复合物的活性,将有助于提高植物光合作用的效率,因此开展光合电子传递关键基因的研究具有重要的科学意义。该研究以锦叶栾叶色变异现象为切入点,以栾树及其突变体锦叶栾为材料,利用Li-COR6800光合分析仪测量栾树和锦叶栾生长期内的光合生理指标;结合转录组数据克隆光合关键基因PetC并对其进行生物信息学分析;采用实时定量PCR分析KpPetC基因在不同组织、不同发育时期叶片中的表达模式及与净光合速率之间的相关性;通过P2A串联KpPetC和eGFP构建KpPetC超表达载体,并在84K杨中进行异源遗传转化。结果显示,锦叶栾净光合速率和蒸腾速率普遍低于栾树,胞间CO_(2)浓度显著高于栾树,非气孔限制是其光合速率减弱的主导因素;7月强光高温的天气可能导致锦叶栾光合系统元件受损,产生更严重的光抑制,从而使锦叶栾对强光的耐受性减弱;KpPetC在根、茎、叶、花芽和种子中呈组成型表达,但在叶片中高丰度表达,且与其他组织间存在显著差异;7、8、9月栾树叶片中KpPetC基因的表达量均显著高于锦叶栾,净光合速率与KpPetC基因表达量之间存在正相关关系,推测锦叶栾KpPetC基因表达的下调可能是光合速率下降的主要原因之一。总之,与栾树相比,锦叶栾光合作用能力明显减弱,这可能是KpPetC基因的表达受到抑制,使得光合通路元件受损,最终影响光合电子传递速率。该研究为今后深入研究PetC基因的功能奠定了基础,对于光合电子传递机制的研究具有重要的科学意义。

关键词：锦叶栾光合作用非气孔限制 PetC 基因克隆表达分析遗传转化

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Temperature-Dependent Photoconductance of Heavily Doped ZnO Nanowires

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Nano Research 2011年第11期4卷 1110-1116页

作者： Dongdong Li Liang Zhao ruqian wu Carsten Ronning G. Lu Departments of Physics and E ectrophysiesi University of 8outhem Caiifomia Los Angeles CA 90089 USA Department of Physics University of California Irvine cA 92697 USA Institute of Solid State Physics University of Jena D.07743 Germany

Ga-doped ZnO nanowires have been synthesized by a pulsed laser chemical vapor deposition method. The crystal structure and photoluminescence spectra indicate that the dopant atoms are well integrated into the ZnO wurtzite lattice. The photocurrent properties at different temperatures have been systematically investigated for nanowires configured as a three-terminal device. Among the experimental highlights, a pronounced semiconductor-to-metal transition occurs upon UV band-to-band excitation. This is a consequence of the reduction in electron mobility arising from the drastically enhanced Coulomb interactions and surface scattering. Another feature is the reproducible presence of two resistance valleys at 220 and 320 K upon light irradiation. This phenomenon originates from the trapping and detrapping processes in the impurity band arising from the native defects as well as the extrinsic Ga dopants. This work demonstrates that due to the dimensional confinement in quasi-one-dimensional structures, enhanced Coulomb interaction, surface scattering, and impurity states can significantly influence charge transport.

关键词： ZnO nanowire doping semiconductor-to-metal transition photoconductance impurity states

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Nanodevices engineering and spin transport properties of MnBi_(2)Te_(4) monolayer

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npj Computational Materials 2021年第1期7卷 414-421页

作者： Yipeng An Kun Wang Shijing Gong Yusheng Hou Chunlan Ma Mingfu Zhu Chuanxi Zhao Tianxing Wang Shuhong Ma Heyan Wang ruqian wu wuming Liu School of Physics&Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials Henan Normal UniversityXinxiangChina Department of Physics and Astronomy Mississippi State UniversityStarkvilleMSUSA Department of Chemistry Mississippi State UniversityStarkvilleMSUSA Key Laboratory of Polar Materials and Devices(MOE)&Department of Optoelectronics East China Normal UniversityShanghaiChina Department of Physics and Astronomy University of CaliforniaIrvineCAUSA School of Physics Sun Yat-Sen UniversityGuangzhouChina School of Physics and Technology Suzhou University of Science and TechnologySuzhouJiangsuChina Hebi National Lighting Co.Ltd HebiChina Siyuan Laboratory Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy MaterialsDepartment of PhysicsJinan UniversityGuangzhouChina Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijingChina

Two-dimensional(2D)magnetic materials are essential for the development of the next-generation spintronic ***,layered van der Waals(vdW)compound MnBi2Te4(MBT)has attracted great interest,and its 2D structure has been reported to host coexisting magnetism and ***,we design several conceptual nanodevices based on MBT monolayer(MBT-ML)and reveal their spin-dependent transport properties by means of the first-principles *** pn-junction diodes and sub-3-nm pin-junction field-effect transistors(FETs)show a strong rectifying effect and a spin filtering effect,with an ideality factor n close to 1 even at a reasonably high *** addition,the pip-and nin-junction FETs give an interesting negative differential resistive(NDR)*** gate voltages can tune currents through these FETs in a large ***,the MBT-ML has a strong response to *** results uncover the multifunctional nature of MBT-ML,pave the road for its applications in diverse next-generation semiconductor spin electric devices.

关键词： temperature ideality transport

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Enhanced Anomalous Hall Effect of Pt on an Antiferromagnetic Insulator with Fully Compensated Surface

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Chinese Physics Letters 2022年第10期39卷 60-65页

作者： Yu Bai Zhe Wang Na Lei Wisal Muhammad Lifeng Xiang Qiang Li Huilin Lai Yinyan Zhu Wenbing Wang Hangwen Guo Lifeng Yin ruqian wu Jian Shen State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing Fudan UniversityShanghai 200433China Shanghai Qi Zhi Institute Shanghai 200232China Department of Physics Fudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China Shanghai Research Center for Quantum Sciences Shanghai 201315China Fert Beijing Institute BDBCSchool of Electronic and Information EngineeringBeihang UniversityBeijing 100191China Department of Physics and Astronomy University of CaliforniaIrvineCalifornia 92697USA Collaborative Innovation Center of Advanced Microstructures Nanjing 210093China

We report a significantly enhanced anomalous Hall effect(AHE)of Pt on antiferromagnetic insulator thin film(3-unit-cell La_(0.7)Sr_(0.3)MnO_(3),abbreviated as LSMO),which is one order of magnitude larger than that of Pt on other ferromagnetic(e.g.Y_(3)Fe_(5)O_(12))and antiferromagnetic(***_(2)O_(3))insulator thin *** experiments demonstrate that the antiferromagnetic La_(0.7)Sr_(0.3)MnO_(3)with fully compensated surface suppresses the positive anomalous Hall resistivity induced by the magnetic proximity effect and facilitates the negative anomalous Hall resistivity induced by the spin Hall *** changing the substrate’s temperature during Pt deposition,we observed that the diffusion of Mn atoms into Pt layer can further enhance the *** anomalous Hall resistivity increases with increasing temperature and persists even well above the Neel temperature(T_(N))of *** Monte Carlo simulations manifest that the unusual rise of anomalous Hall resistivity above T_(N)originates from the thermal induced magnetization in the antiferromagnetic insulator.

关键词： effect ferromagnetic resistivity

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Magnetism variation of the compressed antiferromagnetic topological insulator EuSn_(2)As_(2)

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Science China(Physics,Mechanics & Astronomy) 2021年第11期64卷 133-140页

作者： Hualei Sun Cuiqun Chen Yusheng Hou Weiliang Wang Yu Gong Mengwu Huo Lisi Li Jia Yu Wanping Cai Naitian Liu ruqian wu Dao-Xin Yao Meng Wang Center for Neutron Science and Technology School of PhysicsSun Yat-Sen UniversityGuangzhou 510275China School of Physics Guangdong Province Key Laboratory of Display Material and TechnologySun Yat-Sen UniversityGuangzhou 510275China Beijing Synchrotron Radiation Facility Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China Department of Physics and Astronomy University of CaliforniaIrvineIrvine 92697-4575USA

We report a comprehensive high-pressure study,up to 21.1 GPa,on the antiferromagnetic topological insulator EuSn_(2)As_(2) achieved through synchrotron X-ray diffraction,Raman scattering,electrical resistance,magnetic resistance,and Hall transport measurements in combination with first-principles *** Néel temperatures determined from resistance are increased from(24±1)to(77±8)K under pressure,which is a result of enhanced magnetic exchange couplings between Eu^(2+) ions yielded by our first-principles *** negative magnetoresistance of EuSn_(2)As_(2) persists to higher temperatures ***,the enhancement of the observed Néel temperatures deviates from the calculations above 10.0 *** addition,the magnitude of the magnetoresistance,Hall coefficients,and charge carrier densities show abrupt changes between 6.9 and 10.0 *** abrupt changes likely originate from a pressure-induced valence change of Eu ions from a divalent state to a divalent and trivalent mixed state or are related to the structural transition revealed by Raman scattering *** results provide insight into magnetism variation in EuSn_(2)As_(2) and similar antiferromagnetic topological insulators under pressure.

关键词： antiferromagnetism topological insulator high pressure

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栾树查尔酮合酶基因克隆与表达分析

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北京林业大学学报 2021年第3期43卷 27-35页

作者：郭婷黄赛吴茹茜安新民北京林业大学林木分子设计育种高精尖创新中心林木育种国家工程实验室北京林业大学生物科学与技术学院北京100083

【目的】查尔酮合酶(CHS)是苯丙烷途径的限速酶之一,在植物次生代谢物的合成中起着重要的作用。本研究通过对栾树CHS基因进行克隆与生物信息学分析,以及分析栾树CHS基因表达与类黄酮合成的关系,期望为后续深入研究栾树类黄酮代谢途径其... 详细信息

【目的】查尔酮合酶(CHS)是苯丙烷途径的限速酶之一,在植物次生代谢物的合成中起着重要的作用。本研究通过对栾树CHS基因进行克隆与生物信息学分析,以及分析栾树CHS基因表达与类黄酮合成的关系,期望为后续深入研究栾树类黄酮代谢途径其他相关基因、CHS基因家族以及锦叶栾呈色机制提供参考。【方法】以栾树叶片为材料,采用RTPCR技术进行查尔酮合酶基因的克隆并进行生物信息学分析;通过实时定量PCR(qRT-PCR)技术分析CHS基因在栾树不同组织以及在5月、7月、9月的栾树和锦叶栾叶片中的表达模式;通过代谢组测定筛选出栾树与锦叶栾的类黄酮差异代谢物。【结果】克隆获得两个CHS基因的全长DNA,命名为KpCHS1和KpCHS2。其中KpCHS1序列全长为2492 bp,ORF为1173 bp,编码含有390个氨基酸的蛋白质;KpCHS2序列全长为1321 bp,ORF为1182 bp,编码含有393个氨基酸的蛋白质;进一步的序列比对和系统发育分析表明,KpCHS1和KpCHS2蛋白高度同源,具有四个CHS特异性保守基序和一个查尔酮合成酶活性位点;KpCHS1和KpCHS2在栾树根、茎、叶、种子中都普遍表达,其中,KpCHS2在种子中的表达量最高,KpCHS1在叶片中表达量高,而在根和茎中,两个基因的表达量相似且较低;表达模式分析显示,在栾树和锦叶栾叶片中,随着月份增加,KpCHS1的表达量呈现出下降的趋势,而KpCHS2表达量未表现出明显的规律。在7月份的叶片样本中,KpCHS1基因在锦叶栾中表达量显著高于栾树;代谢组结果显示,山奈酚-7-O-葡萄糖苷、7-羟基香豆素、槲皮素-3β-D-葡萄糖苷、以及类黄酮生物合成途径重要的中间产物山萘酚、柚皮苷等黄酮类物质在锦叶栾叶中含量显著升高。【结论】KpCHS1和KpCHS2属于栾树查尔酮合酶家族并且高度同源,但在系统进化树上分布在很远分支上,推测这两个蛋白在氨基酸活性催化功能上可能存在较大差异;KpCHS1和KpCHS2在根、茎、叶、种子中均有表达,且在叶和种子中较高。研究结果初步显示,KpCHS1基因与栾树类黄酮的生物合成高度相关。

关键词：栾树查尔酮合酶克隆类黄酮合成

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Ballistic performances of the hourglass lattice sandwich structures under high-velocity fragments

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Defence Technology（防务技术） 2024年第1期31卷 312-325页

作者： He-xiang wu Jia Qu Lin-zhi wu Key Laboratory of Advanced Ship Materials and Mechanics College of Aerospace and Civil EngineeringHarbin Engineering UniversityHarbin150001China School of Civil Engineering Northeast Forestry UniversityHarbin150040China

In this paper,the numerical simulation method is used to study the ballistic performances of hourglass lattice sandwich structures with the same mass under the vertical incidence of *** is paid to elucidating the influences of rod cross-section dimensions,structure height,structure layer,and rod inclination angle on the deformation mode,ballistic performances,and ability to change the ballistic direction of *** results show that the ballistic performances of hourglass lattice sandwich structures are mainly affected by their structural *** this respect,structural parameters optimization of the hourglass lattice sandwich structures enable one to effectively improve their ballistic limit velocity and,consequently,ballistic performances.

关键词： Hourglass lattice sandwich structures Ballistic performances high-velocity Finite element analysis

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Resilience-incorporated seismic risk assessment of precast concrete frames with“dry”connections

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Earthquake Engineering and Engineering Vibration 2024年第2期23卷 403-425页

作者： wu Chenhao Tang Yuchuan Cao Xuyang wu Gang Key Laboratory of Concrete and Prestressed Concrete Structures of the Ministry of Education Nanjing 211102China Department of Civil and Environmental Engineering University of CaliforniaLos AngelesCA 90095USA School of Civil Engineering Southeast UniversityNanjing 211102China College of Civil and Transportation Engineering Hohai UniversityNanjing 210024China

A resilience-incorporated risk assessment framework is proposed and demonstrated in this study to manifest the advantageous seismic resilience of precast concrete frame(PCF)structures with“dry”connections in terms of their low damage and rapid *** framework integrates various uncertainties in the seismic hazard,fragility,capacity,demand,loss functions,and post-earthquake *** this study,the PCF structures are distinguished from ordinary reinforced concrete frame(RCF)structures by characterizing multiple limit states for the PCF based on its unique damage ***,probabilistic story-wise pushover analyses are performed to yield story-wise capacities for the predefined limit *** the seismic resilience analysis,a step-wise recovery model is proposed to idealize the functionality recovery process,with separate considerations of the repair and non-repair *** recovery model leverages the economic loss and downtime to delineate the stochastic post-earthquake recovery curves for the resilience loss *** such,contingencies in the probabilistic post-earthquake repairs are incorporated and the empirical judgments on the recovery parameters are largely *** proposed framework is demonstrated through a comparative study between two“dry”connected PCFs and one RCF designed as alternative structural systems for a prototype *** results from the risk quantification indicate that the PCFs show reduced loss hazards and lower expected losses relative to the ***,the PCF equipped with energy dissipation devices at the“dry”connections largely reduces the expected economic loss,downtime,and resilience loss by 29%,56%,and 60%,respectively,compared to the RCF.

关键词： precast concrete frame non-emulative precast system seismic resilience seismic risk functional recovery

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