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chinese Journal of Polymer science 2001年第4期19卷 399-405页

作者： Zhen-hua yuan De-yan Shen ren-yuan {3. Polymer physics laboratory center for molecular science, institute of chemistry chinese academy of sciences, Beijing 100080 China chinese Acad Sci Inst Chem Ctr Mol Sci Polymer Phys Lab Beijing 100080 Peoples R China

Viscoelastic behavior of the non-Hooke deformation of amorphous PET film before yield was investigated in the temperature region 74-80.5 degreesC around the glass transition temperature. The film specimen was drawn to yield point followed by unloading to zero stress, then the residual deformation was held constant; while the subsequent evolution of the stress was recorded. An induction period was found in the course of stress evolution followed by a stress step-increase. The induction period decreases with increasing drawing temperature with an activation energy of 1.10 MJ/mol.K, which is attributed to the time needed for the relaxation of rubbery deformation through cooperative internal rotations. At temperatures lower than 74 degreesC, there is no stress increase or the induction period becomes too long to be observed. Thus the nature of anelasticity in the non-Hooke region before yielding is attributed to stress induced rubbery deformation. The experimental results are interpreted in terms of Perez' theological model of a series connected Hooks spring and a Voigt element consisting of a parallel connected elastic spring and a dashpot.

关键词： pre-yield deformation PET uniaxial drawing non-Hooke deformation viscoelasticity stress induced rubbery deformation

CRYSTALLINE MORPHOLOGY IN A SERIES OF CH_(3.-SUBSTITUTED THERMOTROPIC AROMATIC POLYESTERS WITH EVEN AND ODD FLEXIBLE SPACERS

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chinese Journal of Polymer science 2001年第1期19卷 71-78页

作者： Shou-xi Chen Zhong-ming Hu Wen-hui Song Yong-ze Jin ren-yuan qian State Key laboratory of Polymer physics and chemistry Center for Molecular ScienceInstitute of ChemistryChinese Academy of SciencesBeijing 100080China

Crystalline morphology in a series of CH_(3.-substituted main chain thermotropic aromatic polyesters with even and odd numbered methylene spacers has been studied by polarizing optical microscopy(POM),scanning electron microscopy(SEM)and transmission electron microscopy(TEM).On crystallization from solution evaporation spherulites of radial structure were observed in the polymers with even numbered spacers,but spherulites with concentric rings form in the polymer with odd numbered *** spherulites have a lamellar structure,which is about 10 nm in *** crystallization from nematic glassy state spherulites can not be grown;lamellar structure was only observed around disclinations in a specimen during *** the case of crystallization from nematic melt two types of spherulites can be observed far the sample with even numbered *** the sample with add numbered spacers spherulites can not be formed,but only irregular crystallites.

关键词： crystalline morphology spherulite even-odd flexible spacers CH_(3.-substituted thermotropic aromatic polyester

Two-dimensional materials for future information technology: status and prospects

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science China(Information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling {3. Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... School of Electronic science and Engineering Nanjing University School of Integrated Circuits Interdisciplinary Research Center for Future Intelligent Chips (Chip-X)Nanjing University School of Integrated Circuit science and Engineering Nanjing University of Posts and Telecommunications State Key laboratory of Infrared physics Shanghai Institute of Technical Physics Chinese Academy of Sciences School of physics and Key Lab of Quantum Materials and Devices of the Ministry of Education School of Electronic Science & EngineeringSoutheast University College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University Suzhou laboratory State Key laboratory of Integrated Chips and Systems School of MicroelectronicsFudan University Shaoxin laboratory Department of Applied physics The Hong Kong Polytechnic University Key laboratory for Micro-Nano physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key laboratory of Nanophotonic Materials and Devices & Key laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of chemistry and Chemical Engineering Hunan University Key laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3. integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

Multidisciplinary and multiscale nanoscience research roadmap based on large scientific facilities

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science China chemistry 2024年第8期67卷 2497-2523页

作者： yuan Zeng Shuhan Zhang Yuecong Guo Yalin Cong Xu Ding Peihua Li Yunxiang Lin Wenzhi ren Hui Su Weigang Sun Liuxin Xu Guikai Zhang Shihua Chen Yu Chen Weiren Cheng Shengqi Chu Yong Guan Jinru Han Jie Lin Hengjie Liu Zheyi Liu Pan Luo Fanchun Meng Sicong Qiao Zongyin Song Ying Wang Zhao Wu Chenyu Yang Meng Yang Shirui Yang Zi Yin Zhibin Yin Pengjun Zhang Hongyu Zhang Pingping Zheng Jia Zhou Wanlin Zhou Pengfei An He Cheng Chunhai Fan Xingjiu Huang Yong Lei Lina Li Mu Li Qinghua Liu Shuming Peng Li Song Zhihu Sun Yangchao Tian Fangjun Wang Lihua Wang Liming Wang Shi{3.g Wei Aiguo Wu Chunlei Xiao Xueming Yang Panchao Yin Jing Zhang Mingxin Zhang Yaling Wang Chunying Chen CAS Key laboratory for Biomedical Effects of Nanomaterials and Nanosafety New Cornerstone Science LaboratoryNational Center for Nanoscience and TechnologyBeijing 100190China University of chinese academy of sciences Beijing 100049China National Synchrotron Radiation laboratory University of Science and Technology of ChinaHefei 230029China institute of Solid State physics Hefei Institutes of Physical ScienceChinese Academy of SciencesHefei 230031China institutes of Physical science and Information Technology Anhui UniversityHefei 230601China Ningbo Key laboratory of Biomedical Imaging Probe Materials and Technology Zhejiang International Cooperation Base of Biomedical Materials Technology and ApplicationCAS Key Laboratory of Magnetic Materials and DevicesNingbo Cixi Institute of Biomedical EngineeringZhejiang Engineering Research Center for Biomedical MaterialsNingbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China Advanced Energy science and Technology Guangdong laboratory Huizhou 516000China College of chemistry and Chemical Engineering Hunan Normal UniversityChangsha 410081China State Key laboratory of Luminescent Materials and Devices South China Advanced Institute for Soft Matter Science and TechnologySouth China University of TechnologyGuangzhou 510640China Beijing Synchrotron Radiation Facility Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China CAS Key laboratory of Separation sciences for Analytical chemistry Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023China State Key laboratory of molecular Reaction Dynamics Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023China institute of Advanced science Facilities Shenzhen 518107China State Key laboratory of Coal Conversion Institute of Coal ChemistryChinese Academy of SciencesTaiyuan 030001China State Key laboratory of Particle Detection and Electronics Institute of High Energy PhysicsChinese Acade

With the advancement of modern science and technology, large scientific facilities are increasingly oriented toward demand and application, and can be used for basic research as well as serving multiple disciplines. Developing large scientific facilities and related analytical technologies enhances understanding of large scientific facilities and popularizes their application in research across multiple disciplines. The combination of light or neutron sources from large scientific facilities and advanced analytical technologies can be achieved for materials structure information, dynamics study of chemical reactions, high dissociation of biomolecules, 3. visualization of energy materials or biological samples, etc. We first introduce the progress of domestic large scientific facilities of synchrotron radiation(SR) and free electron lasers(FELs) with different wavelengths and neutron *** further discuss the comparison between chinese and typical foreign facilities in X-ray radiation from X-ray tubes, synchrotrons, X-ray FELs, and neutron sources based on physical parameters of light and neutron sources. In addition, we focus on the technological progress and perspectives combined with advanced X-ray radiation and neutron sources of large scientific facilities in China, especially in the nanoscience fields of energy catalysis and biological science. We hope that this roadmap will provide references on technology and methods to experimental users, as well as prospects for future development of technologies based on large research infrastructure facilities. Comprehensive studies and guidelines for basic research to practical application in various disciplines can be made with the assistance of large scientific facilities.

关键词： large scientific facilities synchrotron radiation FEL light sources neutron sources spectroscopic analysis methods X-ray imaging techniques structural information chemical dynamics

Time-Dependent Density Matrix renormalization Group Coupled with n-Mode Representation Potentials for the Excited State Radiationless Decay Rate:Formalism and Application to Azulene

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chinese Journal of Chemical physics 2021年第5期34卷 565-582,I0002,I0003页

作者： Jia-jun ren yuan-heng Wang Wei-tang Li Tong Jiang Zhi-gang Shuai MOE Key laboratory of Organic Opto Electronics and molecular Engineering Department of ChemistryTsinghua UniversityBeijing 100084China

We propose a method for calculating the nonradiative decay rates for polyatomic molecules including anharmonic effects of the potential energy surface(PES)in the Franck-Condon *** method combines the n-mode repre-sentation method to construct the ab initio PES and the nearly exact time-dependent density matrix renormalization group method(TD-DMRG)to simulate quantum *** addition,in the framework of TD-DMRG,we further develop an algorithm to calculate the final-state-resolved rate coefficient which is very useful to analyze the contribution from each vibrational mode to the transition *** use this method to study the internal conversion(IC)process of azulene after taking into account the anharmonicity of the ground state *** results show that even for this semi-rigid molecule,the intramode anharmonicity enhances the IC rate significantly,and after considering the two-mode coupling effect,the rate increases even *** reason is that the anharmonicity enables the C-H vibrations to receive electronic energy while C-H vibrations do not contribute on the harmonic PES as the Huang-Rhys factor is close to 0.

关键词： Time-dependent density matrix renormalization group method Nonradiative decay rate Quantum dynamics Matrix product state

1.3.μm InAs/GaAs quantum dots grown on Si substrates

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chinese physics B 2018年第12期27卷 526-531页

作者： Fu-Hui Shao Yi Zhang Xiang-Bin Su Sheng-Wen Xie Jin-Ming Shang Yun-Hao Zhao Chen-yuan Cai ren-Chao Che Ying-qiang Xu Hai-Qiao Ni Zhi-Chuan Niu State Key laboratory for Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences College of Materials science and Opto-Electronic Technology University of Chinese Academy of Sciences laboratory of Advanced Materials Department of Materials Science Collaborative Innovation Center of Chemistry for Energy Materials (iChEM)Fudan University

We compare the effect of InGaAs/GaAs strained-layer superlattice(SLS) with that of GaAs thick buffer layer(TBL)serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in blocking the propagation of threading dislocations, which are generated at the interface between the GaAs buffer layer and the Si substrate. Through testing and analysis, we conclude that the weaker photoluminescence for quantum dots(QDs) on Si substrate is caused by the quality of capping In_(0.15)Ga_(0.85)As and upper GaAs. We also find that the periodic misfits at the interface are related to the initial stress release of GaAs islands, which guarantees that the upper layers are stress-free.

关键词： quantum dots dislocation filter molecular beam epitaxy(MBE) silicon photonics

On the accurate characterization of quantum-dot light-emitting diodes for display applications

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npj Flexible Electronics 2022年第1期6卷 351-362页

作者： Wangxiao Jin Yunzhou Deng Bingbing Guo Yaxiao Lian Baodan Zhao Dawei Di Xiaowei Sun Kai Wang Shuming Chen Yixing Yang Weiran Cao Song Chen Wenyu Ji Xuyong Yang yuan Gao Shuangpeng Wang Huaibin Shen Jialong Zhao Lei qian Fushan Li Yizheng Jin Key laboratory of Excited-State Materials of Zhejiang Province State Key Laboratory of Silicon MaterialsDepartment of ChemistryZhejiang University310027 HangzhouChina State Key laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang University310027 HangzhouChina Department of Electronic and Electrical Engineering Southern University of Science and Technology518055 ShenzhenChina TCL Research ShenzhenGuangdongChina Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. LtdShenzhenGuangdongChina College of chemistry Chemical Engineering and Materials ScienceSoochow University199 Ren’ai Rd215123 SuzhouJiangsuChina Key Lab of physics and Technology for Advanced Batteries(Ministry of Education) College of PhysicsJilin University130023 ChangchunChina Key laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University149 Yanchang RoadShanghai 200072China Najing Technology Corporation Ltd Hangzhou 310052China institute of Applied physics and Materials Engineering University of MacaoTaipaMacaoSAR 999078China Key laboratory for Special Functional Materials of Ministry of Education National&Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technologyand Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004China School of Physical science and Technology MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and MaterialsGuangxi Key Laboratory of Processing for Non-ferrous Metals and Featured MaterialsGuangxi UniversityNanning 530004China Division of Functional Materials and Nanodevices Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China College of physics and Information Engineering Fuzhou UniversityFuzhou 350108China

Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display *** the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different ***,we report a comprehensive study on the characterizations of QLEDs using various *** show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device *** errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay ***,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.

关键词： diodes characterization luminous

Nucleic acids analysis

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science China chemistry 2021年第2期64卷 171-203页

作者： Yongxi Zhao Xiaolei Zuo qian Li Feng Chen Yan-Ru Chen Jinqi Deng Da Han Changlong Hao Fujian Huang Yanyi Huang Guoliang Ke Hua Kuang Fan Li Jiang Li Min Li Na Li Zhenyu Lin Dingbin Liu Juewen Liu Libing Liu Xiaoguo Liu Chunhua Lu Fang Luo Xiuhai Mao Jiashu Sun Bo Tang Fei Wang Jianbin Wang Lihua Wang Shu Wang Lingling Wu Zai-Sheng Wu Fan Xia Chuanlai Xu Yang Yang Bi-Feng yuan Quan yuan Chao Zhang Zhi Zhu Chaoyong Yang Xiao-Bing Zhang Huanghao Yang Weihong Tan Chunhai Fan institute of Analytical chemistry and Instrument for Life science The Key Laboratory of Biomedical Information Engineering of Ministry of EducationSchool of Life Science and TechnologyXi’an Jiaotong UniversityXi’an 710049China institute of molecular Medicine Shanghai Key Laboratory for Nucleic Acid Chemistry and NanomedicineRenji HospitalSchool of MedicineShanghai Jiao Tong UniversityShanghai 200127China School of chemistry and Chemical Engineering Frontiers Science Center for Transformative MoleculesInstitute of Translational MedicineShanghai Jiao Tong UniversityShanghai 200240China Cancer Metastasis Alert and Prevention center Fujian Provincial Key Laboratory of Cancer Metastasis Chemoprevention and ChemotherapyState Key Laboratory of Photocatalysis on Energy and EnvironmentCollege of ChemistryFuzhou UniversityFuzhou 350108China CAS Key laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in NanoscienceNational Center for Nanoscience and TechnologyBeijing 100190China State Key Lab of Food science and Technology International Joint Research Laboratory for Biointerface and BiodetectionSchool of Food Science and TechnologyJiangnan UniversityWuxi 214122China Faculty of Materials science and chemistry Engineering Research Center of Nano-Geomaterials of Ministry of EducationChina University of GeosciencesWuhan 430074China College of chemistry and molecular Engineering Biomedical Pioneering Innovation Center(BIOPIC)Beijing Advanced Innovation Center for Genomics(ICG)Peking-Tsinghua Center for Life SciencesPeking UniversityBeijing 100871China State Key laboratory of Chemo/Biosensing and Chemometrics College of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China Division of Physical Biology CAS Key Laboratory of Interfacial Physics and TechnologyShanghai Institute of Applied PhysicsChinese Academy of SciencesShanghai 201800China Bioimaging center Shanghai Synchrotron Radiation FacilityZhangjiang LaboratoryShanghai Advanced

Nucleic acids are natural biopolymers of nucleotides that store, encode, transmit and express genetic information, which play central roles in diverse cellular events and diseases in living things. The analysis of nucleic acids and nucleic acids-based analysis have been widely applied in biological studies, clinical diagnosis, environmental analysis, food safety and forensic *** the past decades, the field of nucleic acids analysis has been rapidly advancing with many technological *** this review, we focus on the methods developed for analyzing nucleic acids, nucleic acids-based analysis, device for nucleic acids analysis, and applications of nucleic acids analysis. The representative strategies for the development of new nucleic acids analysis in this field are summarized, and key advantages and possible limitations are discussed. Finally, a brief perspective on existing challenges and further research development is provided.

关键词： nucleic acids analysis signal amplification DNA nanotechnology aptamer biosensing

Magnetic-Bottle and Velocity-Map Imaging Photoelectron Spectroscopy of APS-(A=C14H10 or Anthracene):Electron Structure,Spin-Orbit Coupling of APS,and Dipole-Bound State of APS-

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chinese Journal of Chemical physics 2018年第4期31卷 463-470,614页

作者： Qin-qin yuan Zheng Yang ren-zhong Li Wesley J.Transue Zhi-peng Li LingJiang Niranjan Govinde Christopher C.Cumminsa Xue-Bin Wang Physical sciences Division Pacific Northwest National Laboratory902 Battelle BoulevardP.O.Box 999MS K8-88RichlandWashington 99352USA State Key laboratory of molecular Reaction Dynamics Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 115023China University of chinese academy of sciences Be~iing 100049China Department of chemistry Massachusetts Institute of TechnologyCambridgeMA 02139USA Environmental molecular sciences laboratory Pacific Northwest National LaboratoryP.O.Box 999MS K8-91Richland WA 09352USA

Gaseous dibenzo-7-phosphanorbornadiene P-sulfide anions APS （A C14H10 or anthracene） were generated via electrospray ionization, and characterized by magnetic-bottle photoelec- tron spectroscopy, velocity-map imaging （VMI） photoelectron spectroscopy, and quantum chemical calculations. The electron affinity （EA） and spin-orbit （SO） splitting of the APS＂ radical are determined from the photoelectron spectra and Franck-Condon factor simulations to be EA （2.62-4-0.05） eV and SO splitting （43.4-7） meV. VMI photoelectron images show strong and sharp peaks near the detachment threshold with an identical electron kinetic energy （eKE） of 17.9 meV at three different detachment wavelengths, which are therefore assigned to autodetachment from dipole-bound anion states. The B3.YP/6-3.＋＋G（d,p） calculations indicate APS has a dipole moment of 3.3. Debye, large enough to support a dipole-bound electron.

关键词： Dibenzo-7-phosphanorbornadiene P-sulfide Electronic structure Spin-orbitcoupling Dipole-bound state VMI photoelectron spectroscopy

Recent progress in perovskite solar cells:from device to commercialization

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science China chemistry 2022年第12期65卷 2369-2416页

作者： Xinhui Luo Xuesong Lin Feng Gao Yang Zhao Xiaodong Li Liqing Zhan Zexiong Qiu Jin Wang Cong Chen Lei Meng Xiaofeng Gao Yu Zhang Zijian Huang Rundong Fan Huifen Liu Yanrun Chen Xiaoxue ren Jiahong Tang Chun-Hao Chen Dong Yang Yongguang Tu Xiao Liu Dongxue Liu Qing Zhao Jingbi You Junfeng Fang Yongzhen Wu Hongwei Han Xiaodan Zhang Dewei Zhao Fuzhi Huang Huanping Zhou Yongbo yuan Qi Chen Zhaokui Wang Shengzhong(Frank)Liu Rui Zhu Jotaro Nakazaki Yongfang Li Liyuan Han State Key laboratory of Metal Matrix Composites School of Material Science and EngineeringShanghai Jiao Tong UniversityShanghai 200240China State Key Lab for Mesoscopic physics and Frontiers science center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China Key laboratory of Semiconductor Materials science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of physics and Electronic science Engineering Research Center of Nanophotonics&Advanced InstrumentMinistry of EducationEast China Normal UniversityShanghai 200241China Key laboratory for Advanced Materials and institute of Fine Chemicals School of Chemistry and Molecular EngineeringEast China University of Science and TechnologyShanghai 200237China Wuhan National laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China institute of Photoelectronic Thin Film Devices and Technology Renewable Energy Conversion and Storage CenterSolar Energy Research CenterNankai UniversityTianjin 300350China College of Materials science and Engineering&Engineering Research center of Alternative Energy Materials&Devices Ministry of EducationSichuan UniversityChengdu 610065China Beijing National laboratory for molecular sciences CAS Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing 100190China State Key laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of TechnologyWuhan 430070China Beijing Key laboratory for Theory and Technology of Advanced Battery Materials Key Laboratory of Polymer Chemistry and Physics of Ministry of EducationSchool of Materials Science and EngineeringPeking UniversityBeijing 100871China School of physics and Electronics Hunan Key Laboratory of Nanophotonics and DevicesCentral South UniversityChangsha 410083China Experimental center for Advanced Materials School of Materials Science and EngineeringBeijing Institute of TechnologyBeijing 100081China Jia

Perovskite solar cells(PSCs) are undergoing rapid development and the power conversion efficiency reaches 25.7% which attracts increasing attention on their commercialization *** this review,we summarized the recent progress of PSCs based on device structures,perovskite-based tandem cells,large-area modules,stability,applications and ***,the challenges and perspectives are discussed,aiming at providing a thrust for the commercialization of PSCs in the near future.

关键词： perovskite solar cells device engineering stability application