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structural and compositional analysis of(InGa)(Assb)/GaAs/GaP stranski-Krastanov quantum dots

Light(science & Applications) 2021年第7期10卷 1313-1325页

作者： raja s.r.gajjela Arthur L.Hendriks James O.Douglas Elisa M.sala Petr steindl Petr Klenovský Paul A.J.Bagot Michael P.Moody Dieter Bimberg Paul M.Koenraad Department of Applied Physics Eindhoven University of Technology5612 AZ EindhovenThe Netherlands Department of Materials University of OxfordParks RoadOxford OX13PHUK Center for Nanophotonics Institute for Solid State PhysicsTechnischeUniversität BerlinHardenbergstr.3610623 BerlinGermany EPsrC National Epitaxy Facility The University of SheffieldNorth CampusBroad LaneSheffield S37HQUK Department of Condensed Matter Physics Faculty of ScienceMasaryk UniversityKotlářská267/261137 BrnoCzech Republic Huygens-Kamerlingh Onnes Laboratory Leiden UniversityP.O.Box 95042300 RA LeidenNetherlands Czech Metrology Institute Okružní3163800 BrnoCzech Republic “Bimberg Chinese-German Center for Green Photonics”Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of Sciences at CIOMP13033 ChangchunChina

We investigated metal-organic vapor phase epitaxy grown(InGa)(Assb)/GaAs/GaP stranski–Krastanov quantum dots(QDs)with potential applications in QD-Flash memories by cross-sectional scanning tunneling microscopy(X-sTM)and atom probe tomography(APT).The combination of X-sTM and APT is a very powerful approach to study semiconductor heterostructures with atomic resolution,which provides detailed structural and compositional information on the *** rather small QDs are found to be of truncated pyramid shape with a very small top facet and occur in our sample with a very high density of∼4×10^(11) cm^(−2).APT experiments revealed that the QDs are GaAs rich with smaller amounts of In and *** element(FE)simulations are performed using structural data from X-sTM to calculate the lattice constant and the outward relaxation of the cleaved *** composition of the QDs is estimated by combining the results from X-sTM and the FE simulations,yielding∼In_(x)Ga_(1−x)As_(1−y)sb_(y),where x=0.25–0.30 and y=0.10–***,the reported composition is in good agreement with the experimental results obtained by APT,previous optical,electrical,and theoretical analysis carried out on this material *** confirms that the InGasb and GaAs layers involved in the QD formation have strongly intermixed.A detailed analysis of the QD capping layer shows the segregation of sb and In from the QD layer,where both APT and X-sTM show that the sb mainly resides outside the QDs proving that sb has mainly acted as a surfactant during the dot *** structural and compositional analysis provides a valuable insight into this novel QD system and a path for further growth optimization to improve the storage time of the QD-Flash memory devices.

关键词： analysis quantum sectional

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