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A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

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Journal of Semiconductors 2014年第11期35卷 59-63页

作者： Shiromani Balmukund Rahi Bahniman Ghosh pranav asthana Department of Electrical Engineering Indian Institute of Technology Kanpur Microelectronics Research Center 10100Burnet RoadBldg.160University of Texas at Austin

We propose a heterostructure junctionless tunnel field effect transistor （HJL-TFET） using AIGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates （named gate, gatel ） with two different work functions （gate = 4.2 eV, gatel = 5.2 eV respectively）. The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10^-6 A/μm, the off current remains as low as 9.1 × 10^-14 A/μm. So /ON/OFF ratio of 10^8 is achieved. Point subthreshold swing has also been reduced to a value of 41 mV/decade for TiO2 gate material.

关键词： band-to-band tunneling (BTBT) TFET heterostructure junctionless tunnel field effect transistor (HJL-TFET) ION/ION/IOFF ratio subthreshold slope VLSI

Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor

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Journal of Semiconductors 2014年第11期35卷 32-39页

作者： Shibir Basak pranav Kumar asthana Yogesh Goswami Bahniman Ghosh Department of Electrical Engineering Indian Institute of Technology Kanpur Microelectronics Research Center 10100Burnet RoadBldg.160University of Texas at Austin

We propose a dynamic threshold voltage j unctionless tunnel FET （DT-JLTFET） in wnlcn me mresnolu voltage can be dynamically adjusted, resulting in higher ON-current. Through 2D numerical simulations, it is presented that the threshold voltage in the DT-JLTFET can be adjusted by applying a voltage to the adjust gate. The impact of the threshold voltage shift on the overall performance of the device is also studied. A comparison is made between the dynamic threshold voltage characteristics of a silicon JLTFET and a Sio.7Geo.3 source JLTFET.

关键词： SiGe tunnel field effect transistor ON-current

A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications

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Journal of Semiconductors 2016年第5期37卷 30-34页

作者： pranav Kumar asthana Yogesh Goswami Bahniman Ghosh Department of Electrical Engineering Indian Institute of Technology Kanpur Microelectronics Research Center University of Texas at Austin

We propose a nanoscale single gate ultra thin body intrinsic channel tunnel field effect transistor using the charge plasma concept for ultra low power applications. The characteristics of TFETs （having low leakage） are improved by junctionless TFETs through blending advantages of Junctionless FETs （with high on current）. We further improved the characteristics, simultaneously simplifying the structure at a very low power rating using an InAs channel. We found that the proposed device structure has reduced short channel effects and parasitics and provides high speed operation even at a very low supply voltage with low leakage. Simulations resulted in Iovv of - 9 × 10-16A/um, IoN of ,-20uA/um, ION/IoFF of--2× 1010, threshold voltage of 0.057 V, subthreshold slope of 7 mV/dec and DIBL of 86 mV/V for PolyGate/HfO2/InAs TFET at a temperature of 300 K, gate length of 20 nm, oxide thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and VDD of 0.2 V.

关键词： band-to-band tunneling (BTBT) tunnel field effect transistor (TFET) junctionless tunnel field effecttransistor (JLTFET) ION/IOFF ratio low power

Nanoscale Ⅲ-Ⅴ on Si-based junctionless tunnel transistor for EHF band applications

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Journal of Semiconductors 2017年第5期38卷 42-48页

作者： Yogesh Goswami pranav asthana Bahniman Ghosh Department of Electrical Engineering Indian Institute of Technology Kanpur Microelectronics Research Center University of Texas at Austin

A single gate Ⅲ-Ⅴ junctionless tunnel field effect transistor（SG-JLTFET） has been reported which shows excellent dc characteristics at low power supply *** device has a thin uniformly n-type doped channel of GaSb *** antimonide which is grown epitaxially over silicon *** DC performance parameters such as I（on）,I（on）/I（off）,average and point subthreshold slope as well as device parameters for analog applications *** gm,transconductance generation efficiency gm/ID,various capacitances and the unity gain frequency fT are studied using a device *** with examining its endurance to short channel effects,the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET（DG-JLTFET）.The DC and small signal analog performance reflects that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications.

关键词： single gate junctionless tunnel field effect transistor (SG JL-TFET) gallium antimonide band-to-band tunnelling sub-threshold slope (SS)

Thermoregulation,incubator humidity,and skincare practices in appropriate for gestational age ultra-low birth weight infants:need for more evidence

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World Journal of Pediatrics 2024年第7期20卷 643-652页

作者： Umesh Mishra Deanne August Karen Walker pranav R.Jani Mark Tracy Faculty of Medicine and Health University of SydneySydneyAustralia Department of Neonatology Westmead HospitalWestmeadNSWAustralia Grantley Stable Neonatal Unit Royal Brisbane and Women’s HospitalBrisbaneAustralia School of Nursing Midwifery and Social WorkUniversity of QueenslandBrisbaneAustralia Department of Newborn Care Royal Prince Alfred HospitalCamperdownAustralia

Background Although not universal,active care is being offered to infants weighing<500 g at birth,referred to as ultra-low birth weight(ULBW)infants appropriate for gestational *** infants have the greatest risk of dying or developing major *** infants face challenges related to fluid and heat loss as well as skin injury in the initial days of life from extreme anatomical and physiological immaturity of the *** there is an emerging literature on the outcomes of ULBW infants,there is a paucity of evidence to inform practice guidelines for delivering optimal care to this cohort of *** sources A comprehensive review of the literature was performed using the PubMed and Embase *** keywords included“thermoregulation or body temperature regulation”,“incubator humidity”,“skin care”,“infant,extremely low birth weight”and“ultra-low birth weight infants”.Results Evidences for thermoregulation,incubator humidity,and skincare practices are available for preterm infants weighing<1500 g at birth but not specifically for ULBW *** on thermoregulation,incubator humidity,or skincare practices had a small sample size and did not include a sub-group analysis for ULBW *** practice recommendations in ULBW infants are adopted from research in very and/or extremely low birth weight *** This narrative review focuses on challenges in thermoregulation,incubator humidity,and skincare practices in ULBW infants,highlights current research gaps and suggests potential developments for informing practices for improving health outcomes in ULBW infants.

关键词： Incubator humidity Neonatal intensive care unit Skincare Thermoregulation Ultra-low birth weight

A Workable Solution for Reducing the Large Number of Vehicle and Pedestrian Accidents Occurring on a Yellow Light

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Journal of Transportation Technologies 2024年第1期14卷 82-87页

作者： pranav Gupta Silki Arora Drive Safe Now Ottawa Canada

Traffic intersections are incredibly dangerous for drivers and pedestrians. Statistics from both Canada and the U.S. show a high number of fatalities and serious injuries related to crashes at intersections. In Canada, during 2019, the National Collision Database shows that 28% of traffic fatalities and 42% of serious injuries occurred at intersections. Likewise, the U.S. National Highway Traffic Administration (NHTSA) found that about 40% of the estimated 5,811,000 accidents in the U.S. during the year studied were intersection-related crashes. In fact, a major survey by the car insurance industry found that nearly 85% of drivers could not identify the correct action to take when approaching a yellow traffic light at an intersection. One major reason for these accidents is the “yellow light dilemma,” the ambiguous situation where a driver should stop or proceed forward when unexpectedly faced with a yellow light. This situation is even further exacerbated by the tendency of aggressive drivers to inappropriately speed up on the yellow just to get through the traffic light. A survey of Canadian drivers conducted by the Traffic Injury Research Foundation found that 9% of drivers admitted to speeding up to get through a traffic light. Another reason for these accidents is the increased danger of making a left-hand turn on yellow. According to the National Highway Traffic Safety Association (NHTSA), left turns occur in approximately 22.2% of collisions—as opposed to just 1.2% for right turns. Moreover, a study by CNN found left turns are three times as likely to kill pedestrians than right turns. The reason left turns are so much more likely to cause an accident is because they take a driver against traffic and in the path of oncoming cars. Additionally, most of these left turns occur at the driver’s discretion—as opposed to the distressingly brief left-hand arrow at busy intersections. Drive Safe Now proposes a workable solution for reducing the number of accidents occ

关键词： Traffic Accidents Yellow Light Traffic Light Signals Intersection Crashes Collision Traffic Fatalities Traffic Injuries Vehicles Safety Speed Limit Driving Pedestrians Bicyclists Motorcyclists Caution Line Yellow Light Dilemma Left Hand Turn on Yellow Distance Smart Road Technology Signs Signage Autonomous Vehicles AVs Road Safety IoT Internet of Things Infrastructure Accident Reduction Driving Habits Stop Line Red Light Jumping Pedestrian Safety Caution Light Stopping at Intersection Safety at Intersections

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钒技术在难减排行业和能源转型中的作用评估

钢铁钒钛 2024年第4期45卷 84-94页

作者： David ASantos Manish KDixit pranav Pradeep Kumar Sarbajit Banerjee 德克萨斯农工大学化学系德克萨斯农工大学材料科学和工程系德克萨斯农工大学建筑科学系德克萨斯农工大学土木与环境工程学院

重工业的减碳和可再生能源技术的出现皆与获得矿物资源有着密不可分的联系。因此，迫切需要对关键元素在减少温室气体排放方面的作用进行基准评估。考察了钒作为微合金元素在建筑碳减排以及作为电网储能用液流电池的主要成分在能源转型... 详细信息

重工业的减碳和可再生能源技术的出现皆与获得矿物资源有着密不可分的联系。因此，迫切需要对关键元素在减少温室气体排放方面的作用进行基准评估。考察了钒作为微合金元素在建筑碳减排以及作为电网储能用液流电池的主要成分在能源转型中的作用。研究结果表明，钒可使每年减少总计1.85亿t碳排放。其中，中国和欧盟的减排幅度分别为各自排放量的1.15%和0.18%。研究结果强调了关键金属在发展低碳基础设施中的作用，同时指出了进行全面评估并施加政策干预减轻供应链风险的必要性。

关键词：钒微合金化液流电池碳减排

A Workable Solution for Reducing the Large Number of Vehicle and Pedestrian Accidents Occurring on a Yellow Light

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Simultaneous enantioseparation and simulation studies of atenolol,metoprolol and propranolol on Chiralpak^■IG column using supercritical fluid chromatography

Journal of Transportation Technologies（交通科技期刊） 2024年第1期

作者： pranav Gupta Silki Arora

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Journal of Pharmaceutical Analysis 2021年第6期11卷 746-756页

作者： pranav A.Pandya Priyanka A.Shah pranav S.Shrivastav Department of Chemistry School of SciencesGujarat UniversityAhmedabad380009India

Enantioseparation of threeβ-blockers,i.e.,atenolol,metoprolol and propranolol,was studied on amylose tris(3-chloro-5-methylphenylcarbamate)immobilized chiral stationary phase using supercritical fluid chromatography(SFC).The effect of organic modifiers(methanol,isopropanol and their mixture),column temperature and back pressure on chiral separation ofβ-blockers was *** chromatographic separation with respect to resolution,retention,and analysis time was achieved using a mixture of CO_(2) and 0.1%isopropyl amine in isopropanol:methanol(50:50,V/V),in 75:25(V/V)*** the optimized conditions,the resolution factors(Rs)and separation factors(a)were greater than3.0 and 1.5,***,with increase in temperature(25-45℃)and pressure(100-150 bars)there was corresponding decrease in retention factors(k),a and ***,a reverse trend(a and Rs)was observed for atenolol with increase in *** thermodynamic data from van’t Hoff plots revealed that the enantioseparation was enthalpy driven for metoprolol and propranolol while entropy driven for *** understand the mechanism of chiral recognition and the elution behavior of the enantiomers,molecular docking studies were *** binding energies obtained from simulation studies were in good agreement with the elution order found experimentally and also with the free energy *** method was validated in the concentration range of 0.5-10μg/m L for all the *** limit of detection and limit of quantitation ranged from 0.126 to 0.137μg/m L and 0.376-0.414μg/m L,*** method was used successfully to analyze these drugs in pharmaceutical preparations.

关键词： Enantioseparation Supercritical fluid chromatography β-blockers Chiralpak^(■)IG column Molecular docking Binding energy