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Adaptive neighbor constrained deviation sparse variant fuzzy c-means clustering for brain MRI of AD subject

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Visual Informatics 2021年第4期5卷 67-80页

作者： Sukanta ghosh Amlan pratim Hazarika Abhijit Chandra Rajani K.Mudi Department of Instrumentation&Electronics Engineering Jadavpur UniversityKolkata700106India

Progression of Alzheimer’s disease(AD)bears close proximity with the tissue loss in the medial temporal lobe(MTL)and enlargement of lateral ventricle(LV).The early stage of AD,mild cognitive impairment(MCI),can be traced by diagnosing brain MRI scans with advanced fuzzy c-means clustering algorithm that helps to take an appropriate *** this paper,firstly the sparsity is initiated in clustering method that too rician noise is also incorporated for brain MR scans of AD ***,a novel neighbor pixel constrained fuzzy c-means clustering algorithm is designed where topoloty-based selection of parsimonious neighbor pixels is *** adaptability in choice of neighbor pixel class outliers more justified object edge boundary which outperforms a dynamic cluster *** proposed adaptive neighbor constrained deviation sparse variant fuzzy c-means clustering(AN_DsFCM)can withhold imposed sparsity and withstands rician noise at imposed sparse *** novel algorithm is applied for MRI of AD subjects and normative data is acquired to analyse clustering *** data processing pipeline of theoretically plausible proposition is elaborated in *** experimental results are compared with state-of-the-art fuzzy clustering methods for test MRI *** evaluation and statistical measures are studied to meet both image processing and clinical neurophysiology *** the performance of proposed AN_DsFCM is significantly better than other methods.

关键词： MRI Fuzzy c-means Neighbor information modeling Sparse Rician noise AD

P-type double gate junctionless tunnel field effect transistor

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Journal of Semiconductors 2014年第1期35卷 27-33页

作者： M.W.Akram Bahniman ghosh Punyasloka Bal partha Mondal Department of Electrical Engineering Indian Institute of Technology Kanpur Microelectronics Research Center

We have investigated the 20 nm p-type double gate junctionless tunnel field effect transistor （P-DGJLTFET） and the impact of variation of different device parameters on the performance parameters of the P-DGJLTFET is discussed. We achieved excellent results of different performance parameters by taking the optimized device parameters of the P-DGJLTFET. Together with a high-k dielectric material （TiO2） of 20 nm gate length, the simulation results of the P-DGJLTFET show excellent characteristics with a high IoN of ～ 0.3 mA/μm, a low/OFF of ～ 30 fA/μm, a high ION/IOFF ratio of ～ 1×10^10, a subthreshold slope （SS） point of ～ 23 mV/decade, and an average SS of ～ 49 mV/decade at a supply voltage of -1 V and at room temperature, which indicates that PDGJLTFET is a promising candidate for sub-22 nm technology nodes in the implementation of integrated circuits.

关键词： junctionless field effect transistor tunnel field effect transistor subthreshold slope

Testing the intraplate origin of mega-earthquakes at subduction margins

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Geoscience Frontiers 2012年第4期3卷 473-481页

作者： Prosanta K.Khan partha pratim Chakraborty G.Tarafder S.Mohanty Department of Applied Geophysics Indian School of MinesDhanbadIndia Department of Geology University of DelhiDelhiIndia National Geophysical Research Institute HyderabudIndia Department of Applied Geology Indian School of MinesDhanbadIndia

The disastrous Mw 9.3 （seismic moment 1.0 × 10^30 dyn/cm） earthquake that struck northwest Sumatra on 26 December 2004 and triggered -30 m high tsunami has rejuvenated the quest for identi- fying the forcing behind subduction related earthquakes around the world. Studies reveal that the stron- gest part （elastic core） of the oceanic lithosphere lie between 20 and 60 km depth beneath the upper （- 7 km thick） crustal layer, and compressive stress of GPa order is required to fail the rock-layers within the core zone. Here we present evidences in favor of an intraplate origin of mega-earthquakes right within the strong core part （at the interface of semi-brittle and brittle zone）, and propose an alternate model exploring the flexing zone of the descending lithosphere as the nodal area for major stress accumulation. We believe that at high confining pressure and elevated temperature, unidirectional cyclic compressive stress loading in the flexing zone results in an increase of material yield strength through strain hardening, which transforms the rheology of the layer from semi-brittle to near-brittle state. The increased compres- sive stress field coupled with upward migration of the neutral surface （of zero stress fields） under non- coaxial deformation triggers shear crack. The growth of the shear crack is initially confined in the near-brittle domain, and propagates later through the more brittle crustal part of the descending oceanic lithosphere in the form of cataclastic failure,

关键词： Flexing zone Non-coaxial deformation Shear crack Neutral surface Rheology Compressive stress

A laterally graded junctionless transistor

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Journal of Semiconductors 2014年第3期35卷 29-32页

作者： Punyasloka Bal Bahniman ghosh partha Mondal M.W.Akram Department of Electrical Engineering Indian Institute of Technology Kanpur Microelectronics Research Center 10100 Burnet Road University of Texas at Austin

This paper proposes a laterally graded junctionless transistor taking peak doping concentration near the source and drain region, and a gradual decrease in doping concentration towards the center of the channel to improve the I OFF and I ON/I OFF ratio. The decrease of doping concentration in the lateral direction of the channel region depletes a greater number of charge carriers compared to the uniformly doped channel in the OFF-state,which in turn suppresses the OFF state current flowing through the device without greatly affecting the ON state current.

关键词： junctionless field effect transistor laterally graded subthreshold slope

Tandem hidden Markov models using deep belief networks for offline handwriting recognition

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Frontiers of Information Technology & Electronic Engineering 2017年第7期18卷 978-988页

作者： partha pratim ROY Guoqiang ZHONG Mohamed CHERIET Department of Computer Science & Engineering Indian Institute of Technology Roorkee Roorkee 24 766Z India Department of Computer Science and Technology Ocean University of China Qingdao 266100 China Synchromedia Laboratory Ecole de Technologie Supérieure Montreal H3C 1K3 Canada

Unconstrained offiine handwriting recognition is a challenging task in the areas of document analysis and pattern recognition. In recent years, to sufficiently exploit the supervisory information hidden in document images, much effort has been made to integrate multi-layer perceptrons （MLPs） in either a hybrid or a tandem fashion into hidden Markov models （HMMs）. However, due to the weak learnability of MLPs, the learnt features are not necessarily optimal for subsequent recognition tasks. In this paper, we propose a deep architecture-based tandem approach for unconstrained offiine handwriting recognition. In the proposed model, deep belief networks arc adopted to learn the compact representations of sequential data, while HMMs are applied for （sub-）word recognition. We evaluate the proposed model on two publicly available datasets, i.e., RIMES and IFN/ENIT, which are based on Latin and Arabic languages respectively, and one dataset collected by ourselves called Devanagari （all Indian script）. Extensive experiments show the advantage of the proposed model, especially over the MLP-HMMs taudem approaches.

关键词： Handwriting recognition Hidden Markov models Deep learning Deep belief networks Tandemapproach

Hetero-gate-dielectric double gate junctionless transistor(HGJLT)with reduced band-to-band tunnelling effects in subthreshold regime

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Journal of Semiconductors 2014年第6期35卷 19-25页

作者： Bahniman ghosh partha Mondal M.W.Akram Punyasloka Bal Akshay Kumar Salimath Microelectronics Research Center 10100 Burnet RoadUniversity of Texas at Austin Department of Electrical Engineering Indian Institute of Technology Kanpur

We propose a hetero-gate-dielectric double gate junctionless transistor （HGJLT）, taking high-k gate insulator at source side and low-k gate insulator at drain side, which reduces the effects ＆band-to-band tunnelling （BTBT） in the sub-threshold region. A junctionless transistor （JLT） is turned off by the depletion of carriers in the highly doped thin channel （device layer） which results in a significant band overlap between the valence band of the channel region and the conduction band of the drain region, due to off-state drain bias, that triggers electrons to tunnel from the valence band of the channel region to the conduction band of the drain region leaving behind holes in the *** effects of band-to-band tunnelling increase the sub-threshold leakage current, and the accumulation of holes in the channel forms a parasitic bipolar junction transistor （n-p-n BJT for channel JLT） in the lateral direction by the source （emitter）, channel （base） and drain （collector） regions in JLT structure in off-state. The proposed HGJLT reduces the subthreshold leakage current and suppresses the parasitic BJT action in off-state by reducing the band-to-band tunnelling probability.

关键词： hetero-gate-dielectric double gate junctionless transistor band-to-band tunnelling off-state

An Upper Bound on the Higgs Self-Coupling and Higgs Boson Mass from the Positivity Condition of the Mass Matrix

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Journal of Modern Physics 2015年第4期6卷 369-373页

作者： partha pratim Pal Bolpur Sikshaniketan Ashram Vidyalaya West Bengal Bolpur India

The actual value of Higgs boson mass is difficult to determine theoretically due to lack of knowledge on the exact value of Higgs self coupling constant l. The purpose of this paper is to obtain an upper bound on the Higgs mass in the Standard Model on the basis of one-loop effective potential in the ’t Hooft-Landau gauge and MS scheme. The condition of positivity of mass matrix at ф?= ф0 (where ф0 is the absolute minimum of the effective potential) of the scalar field gives an upper bound on the Higgs self coupling as l ≤ 0.881. This condition yields an upper bound on the Higgs mass as mH ≤ 229.48 GeV.

关键词： One-Loop Effective Potential Standard Model Mass Matrix Higgs Boson Mass

The leaf extracts of Camellia sinensis (green tea) ameliorate sodium fluoride-induced oxidative stress and testicular dysfunction in rats

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Asian pacific Journal of Reproduction 2020年第6期9卷 267-274页

作者： Dibyendu Ray Sunidhi Roy Pradip Panda partha Nandi Sandip Mukherjee Subrata ghosh Department of Physiology Serampore CollegeSeramporeHooghly-712201West BengalIndia Department of Statistics Serampore CollegeSeramporeHooghlyW.B.India Government General Degree College LalgarhJhargramWest BengalIndia Department of Physiology Hooghly Mohsin College(PG Section)HooghlyW.B.Pin 712101India

Objective:To investigate the effect of Camellia(C.)sinensis in mitigating oxidative damage and reproductive toxicity in testis induced by sodium fluoride in a rat ***:Twenty-four adult male Wister rats were divided into 4 groups,with 6 rats in each *** 1 orally received distilled water(1 mL/100 g body weight)daily and served as the control group,while group 2 received drinking water with 100 ppm sodium fluoride per day for 21 consecutive days,group 3 was administered with only *** extract by gavage at a dose of 100 mg/kg body weight and group 4 received drinking water with 100 ppm sodium fluoride and 100 mg/kg body weight *** leaf extract per day for 21 consecutive *** the end of the treatment,the rats were sacrificed under light ether *** gonado-somatic index,sperm count and motility,serum level of luteinizing hormone and testosterone were *** peroxidation[malondialdehyde(MDA)level],nitric oxide(NO)production,and activities of antioxidant enzymes-superoxide dismutase(SOD),catalase,and reduced glutathione level(GSH)were also ***:Sodium fluoride treatment significantly decreased gonado-somatic index,sperm count and motility as well as the serum level of luteinizing hormone and testosterone(P<0.05).The histological examination of testes revealed atrophy and degenerative changes in several seminiferous tubules,along with enhanced interstitial space and a reduced number of Leydig *** was a highly significant increase in NO and MDA production(P<0.05),while SOD,catalase activities and GSH level decreased significantly(P<0.05).However,*** significantly restored testicular weight,sperm parameter,hormonal level(P<0.05),and also reversed MDA and NO generation and antioxidant enzymes activities in the testicular tissue(P<0.05).Conclusions:*** may have an ameliorative role against sodium fluoride-induced oxidative damage in the testis probably because of its antioxidant property.

关键词： Oxidative stress Testicular damage Camellia sinensis Antioxidant Sodium fluoride

Advances in early diagnosis of hepatocellular carcinoma

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Hepatoma Research 2019年第7期5卷 9-17页

作者： partha pratim Bose Urmimala Chatterjee Amity Institute of Applied Science Amity UniversityNoida 201313UPIndia Delhi Public School Howrah 711405India

Hepatocellular carcinoma(HCC)is the most recurrent hepatic malignancy and the third in the cancer-related casualties in the *** frequently-documented causes of HCC are chronic liver infections by hepatitis B virus or hepatitis C virus,nonalcoholic fatty liver disease,cirrhosis,exposure to aflatoxins and tobacco smocking,*** presentation of this fatal disease ranges from asymptomatic to upper abdominal pain or common health conditions like weight loss or *** current surveillance strategy for suspected patients,liver imaging and serum alpha fetoprotein estimation has been regularly ***,sensitivity of this diagnostic methodology especially in early detections,often suffers from compromised sensitivity and *** image based and serological biomarkers for HCC has been introduced in recent decades with varied sensitivity as stand-alone or combined diagnostic *** current article will review the status of HCC diagnosis with respect to common diagnostic protocol,and upcoming novel biomarkers.

关键词： Alpha fetoprotein extracellular vehicles hepatocellular carcinoma indocyanine green magnetic resonance imaging non-coding RNA