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Microwave Plasma Enhanced Chemical Vapor Deposition of Carbon Nanotubes

Journal of Surface Engineered Materials and Advanced Technology 2014年第4期4卷 196-209页

作者： Ivaylo Hinkov Samir Farhat Cristian P.Lungu Alix Gicquel Francois Silva Amine Mesbahi ovidiu brinza Cornel Porosnicu Alexandru Anghel University of Chemical Technology and Metallurgy SofiaBulgaria Laboratoire des Sciences des Procedes et des Materiaux CNRSLSPM-UPR 3407Universite Paris 13VilletaneuseFrance National Institute for Laser Plasma and Radiation PhysicsBucharestRomania

Multi-walled carbon nanotubes (MWCNTs) were grown by plasma-enhanced chemical vapor deposition (PECVD) in a bell jar reactor. A mixture of methane and hydrogen (CH4/H2) was decomposed over Ni catalyst previously deposited on Si-wafer by thermionic vacuum arc (TVA) technology. The growth parameters were optimized to obtain dense arrays of nanotubes and were found to be: hydrogen flow rate of 90 sccm;methane flow rate of 10 sccm;oxygen flow rate of 1 sccm;substrate temperature of 1123 K;total pressure of 10 mbar and microwave power of 342 Watt. Results are summarized and significant main factors and their interactions were identified. In addition a computational study of nanotubes growth rate was conducted using a gas phase reaction mechanism and surface nanotube formation model. Simulations were performed to determine the gas phase fields for temperature and species concentration as well as the surface-species coverage and carbon nanotubes growth rate. A kinetic mechanism which consists of 13 gas species, 43 gas reactions and 17 surface reactions has been used in the commercial computational fluid dynamics (CFD) software ANSYS Fluent. A comparison of simulated and experimental growth rate is presented in this paper. Simulation results agreed favorably with experimental data.

关键词： Nanotubes Growth CVD Modeling Kinetics

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