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Impact of the Travelling Magnetic Field on the Metallic Impurities During the Crystallization of Photovoltaic Silicon

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Journal of Iron and Steel Research International 2012年第S1期19卷 243-247页

作者： Kader Zaidat Mircea Cablea Abdallah nouri Ghatfan Hassan Bachir Saadi olga.Budenkova Annie.Gagnoud Yves.Delannoy SIMAP EPM-CNRS 1340 rue de la piscineF-38402Saint Martin d'Heres CedexFrance Silicor Materials Inc. VaughanOntarioCanada

Silicon is the most extensively studied semiconductor mainly owing to its wide applicability in the photovoltaic solar cell *** the qualily of Si photovoltaic cells depends on the purity of the material and on the grain structure of the ingot from which the wafers are *** electrical performance of such materials,i.e. mainly their minority carrier lifetime,is closely related to metal impurities present in the feedstock or introduced during crystal *** impurities strongly interact with existing crystal defects to form complexes,accumulate at dislocations or grain boundaries in different forms,or even form silieide precipitates,which simultaneously contain several metal *** such a context,it is necessary to control the segregation of impurities especially metallic in the grown ingot in order to optimize the cell properties as a function of the raw material purity.A new Bridgman set-up is developed in order to study the crystallization of photovoltaic Si under independently controlled solidification parameters growth rate,thermal gradient,purity and ***,either natural or forced,plays a very important role during the *** intensity and flow pattern affect heat and mass transfer and,consequently,macrostructure and segregation in a solidified *** the convection can be controlled by a travelling magnetic field in order to homogenize or segregate the rejected impurities such as metallic *** effects of the magnetic field intensity and frequency on the segregation and crystalline structure will be presented.

关键词： Silicon magnetic field macrostructure crystallization

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