The influence of reducibility of graphene oxide (Go) by hydrazine hydrate on their electrical properties was investigated. Reduced Go (rGo) films were obtained by mixing of graphene oxide (Go) solution with hydrazine ...
详细信息
The influence of reducibility of graphene oxide (Go) by hydrazine hydrate on their electrical properties was investigated. Reduced Go (rGo) films were obtained by mixing of graphene oxide (Go) solution with hydrazine hydrant (HH) (10% and 50% of concentration) and final dropping on Si substrate or by dropping of Go solution on Si substrate already covered by HH (10% or 50% of concentration). Electrical measurements show semiconductor value ofelectrical conductivity for the samples with high concentration of HH (10-4 A at applied ±10 V). At the same time low concentration of HH leads to much smaller value of conductivity (10-7 A at ± 10 V).
暂无评论