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Nitrosamines crisis in pharmaceuticals-Insights on toxicological implications,root causes and risk assessment:A systematic review

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Journal of Pharmaceutical Analysis 2024年第5期14卷 639-652页

作者： Hemanth P.R.Vikram Tegginamath Pramod Kumar Gunjan Kumar Narasimha M.Beeraka Rajashree Deka Sheik Mohammed Suhail Sandeep Jat namitha bannimath Gayatiri Padmanabhan Ravandur S.Chandan Pramod Kumar bannimath Gurupadayya Department of Pharmaceutical Chemistry JSS College of Pharmacy MysuruJSS Academy of Higher Education and Research(JSSAHER)Mysuru570015India Xenone Healthcare Pvt.Ltd. New Delhi110076India Department of Pharmaceutics JSS College of Pharmacy MysuruJSS Academy of Higher Education and Research(JSSAHER)Mysuru570015India Department of Human Anatomy I.M.Sechenov First Moscow State Medical University(Sechenov University)Moscow119991Russian Federation Department of Pharmacology Raghavendra Institute of Pharmaceutical Education and Research(RIPER)Ananthapuramu515721India Herman B.Wells Center for Pediatric Research Department of PediatricsIndiana University School of MedicineIndianapolisIN46202USA Animal Physiology and Biochemistry Laboratory Department of ZoologyGauhati UniversityGuwahati781014India Department of Pharmacology JSS College of Pharmacy MysuruJSS Academy of Higher Education and Research(JSSAHER)Mysuru570015India Department of Pharmaceutical Analysis National Institute of Pharmaceutical Education and Research(NIPER)-GuwahatiChangsari781101India Department of Pharmacology University of GalwayGalwayH91 TK33Ireland

The presence of N-nitroso compounds,particularly N-nitrosamines,in pharmaceutical products has raised global safety concerns due to their significant genotoxic and mutagenic *** systematic review investigates their toxicity in active pharmaceutical ingredients(APIs),drug products,and pharmaceutical excipients,along with novel analytical strategies for detection,root cause analysis,reformulation strategies,and regulatory guidelines for *** review emphasizes the molecular toxicity of N-nitroso compounds,focusing on genotoxic,mutagenic,carcinogenic,and other physiological ***,it addresses the ongoing nitrosamine crisis,the development of nitrosamine-free products,and the importance of sensitive detection methods and precise risk *** comprehensive overview will aid molecular biologists,analytical scientists,formulation scientists in research and development sector,and researchers involved in management of nitrosamine-induced toxicity and promoting safer pharmaceutical products.

关键词： Carcinogenicity Genotoxicity Mutagenicity Molecular toxicity Nitrosamine impurities Nitrosamine drug substance-related impurities

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Corrigendum to“Nitrosamines crisis in pharmaceuticals-Insights on toxicological implications,root causes and risk assessment:A systematic review”[***.14(2024)100919]

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Journal of Pharmaceutical Analysis 2024年第6期14卷 934-936页

Original statement in the Section 2:*** search Our primary screening of 180 articles yielded the relevant data for this *** selection A total of 180 articles spanning from 1960 to the present day,including original research,reviews,case reports and studies reporting nitrosamine impurities above the no-observed-adverse-effect levels(NOAEL)established by regulatory agencies,were initially *** the primary screening,we considered factors such as relevance,publication date,access to the full article text,and content.

关键词： statement initially spanning

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Optoelectronic properties and Seebeck coefficient in SnSe thin films

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Journal of Semiconductors 2016年第9期37卷 41-46页

作者： K S Urmila T A namitha J Rajani R R Philip B Pradeep Solid State Physics Laboratory Department of Physics Cochin University of Science and Technology Thin Film Research Laboratory Department of Physics Union Christian College

SnSe thin films of thickness 180 nm have been deposited on glass substrates by reactive evaporation at an optimized substrate temperature of 523 ± 5 K and pressure of 10^（-5） *** as-prepared SnSe thin films are characterized for their structural,optical and electrical properties by various experimental *** p-type conductivity,near-optimum direct band gap,high absorption coefficient and good photosensitivity of the SnSe thin film indicate its suitability for photovoltaic *** optical constants,loss factor,quality factor and optical conductivity of the films are *** results of Hall and thermoelectric power measurements are correlated to determine the density of states,Fermi energy and effective mass of carriers and are obtained as 2.8×10^（17）cm^（-3）,0.03 eV and 0.05m_0 *** high Seebeck coefficient ≈ 7863 μV/K,reasonably good power factor ≈7.2×10^（-4） W/（m·K^2） and thermoelectric figure of merit ≈1.2 observed at 42 K suggests that,on further work,the prepared SnSe thin films can also be considered as a possible candidate for cryogenic thermoelectric applications.

关键词： thin films vacuum deposition optoelectronic properties Seebeck coefficient

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Optical and electrical properties and phonon drag effect in low temperature TEP measurements of AgSbSe_2 thin films

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Journal of Semiconductors 2014年第5期35卷 1-6页

作者： T namitha Asokan K S Urmila Rajani Jacob Rachel Reena Philip G S Okram V Ganesan B Pradeep Solid State Physics Laboratory Department of Physics Cochin University of Science and Technology Thin Film Research Lab Department of Physics Union Christian College UGC-DAE Consortium for Scientific Research

Polycrystalline thin films of silver antimony selenide have been deposited using a reactive evaporation technique onto an ultrasonically cleaned glass substrate at a vacuum of 10-5 torr. The preparative parameters, like substrate temperature and incident fluxes, have been properly controlled in order to get stoichiometric, good quality and reproducible thin film samples. The samples are characterized by XRD, SEM, AFM and a UV-vis-NIR spectrophotometer. The prepared sample is found to be polycrystalline in nature. From the XRD pattern, the average particle size and lattice constant are calculated. The dislocation density, strain and number of crystallites per unit area are evaluated using the average particle size. The dependence of the electrical conductivity on the temperature has also been studied and the prepared AgSbSe2 samples are semiconducting in nature. The AgSbSe2 thin films exhibited an indirect allowed optical transition with a band gap of 0.64 eV. The compound exhibits promising thermoelectric properties, a large Seebeck coefficient of 30 mV/K at 48 K due to strong phonon electron interaction. It shows a strong temperature dependence on thermoelectric properties, including the inversion of a dominant carrier type from p to n over a low temperature range 9-300 K, which is explained on the basis of a phonon drag effect.

关键词： silver antimony selenide reactive evaporation thermoelectric power phonon drag effect

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