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Ag-GST/HfO_(x)-based unidirectional threshold switching selector with low leakage current and threshold voltage distribution for high-density cross-point arrays

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Rare Metals 2024年第1期43卷 280-288页

作者： Kyoung-Joung Yoo Dae-Yun Kang nahyun.kim Ho-Jin Lee Ta-Hyeong kim Taeho kim Tae Geun kim School of Electrical Engineering Korea UniversitySeoul 02841Republic of Korea

The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple ***,these devices are unsuitable for cross-point architectures because of the difficulty in controlling the random filament formation that results in large fluctuations in the threshold voltage during *** this study,we investigated the unidirectional threshold transition characteristics associated with an Ag/GST/HfO_(x)/Pt-based bilayer selector and demonstrated the occurrence of a low leakage current(<1×10^(-11) A) and low distribution of the threshold voltage(Δ0.11 V).The bilayer structure could control the filament formation in the intermediate state through the insertion of an HfO_(x) tunneling *** stacking a bilayer selector with NiO_(x)based resistive random-access memory,the leakage and programming currents of the device could be significantly *** the crossbar array configuration,we performed equivalent circuit analysis of a one-selector oneresistor(1S1R) devices and estimated the optimal array size to demonstrate the applicability of the proposed *** maximum acceptable crossbar array size of the 1S1R device with the Ag/GST/HfO_(x)/Pt/Ti/NiO_(x)/Pt structure was 5.29×10^(14)(N^(2),N=2.3×10^(7)).

关键词： Selector device Tunneling barrier Threshold switching Sputtering 1S1R Cross-point array

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One dimensional pea-shaped NiSe_(2) nanoparticles encapsulated in N-doped graphitic carbon fibers to boost redox reversibility in sodium-ion batteries

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Journal of Materials Science & Technology 2024年第1期168卷 215-226页

作者： Hyunjeong Gim Achmad Yanuar Maulana Jiwon Choi Jungwook Song Boram Yun Yuri Jeong nahyun An Myeongkee Park Cybelle M.Futalan Jongsik kim Department of Chemical Engineering(BK21 FOUR Graduate Program) Dong-A UniversityBusan 49315Korea(the Republic of) Department of Chemistry Dong-A UniversityBusan 49315Korea(the Republic of) Department of Chemistry Pukyong National UniversityBusan 48513Korea(the Republic of) Institute of Civil Engineering University of the PhilippinesDiliman 1127Philippines

In recent years,sodium-ion batteries(SIBs)have emerged as a promising technology for energy storage systems(ESSs)because of the abundance and affordability of ***,metal selenides have been studied as promising high-performance conversion-type anode materials in *** them,nickel se-lenide(NiSe_(2))has received considerable attention due to its high theoretical capacity of 495 mAh g^(-1)and ***,it still suffers from poor cycling stability because of the low electrochemical reactivity,large volume expansion,and structural instability during *** address these challenges,NiSe_(2)nanoparticles encapsulated in N-doped graphitic carbon fibers(NiSe_(2)@NGCF)were synthesized by using ZIF-8 as a ***_(2)@NGCF showed a high discharge capacity of 558.3 mAh g^(-1)with a fading rate of 0.14%per cycle after 200 cycles at 0.5 A g^(-1)in 0.01-3.0 *** a very high current density of 5 A g^(-1),the capacity still displayed excellent long-term cycle life with a discharge capacity of 406.1 mAh g^(-1)with a fading rate of 0.016%per cycle after 3000 *** mechanism of the excellent electrochem-ical performance of NiSe_(2)@NGCF was thoroughly investigated by ex-situ XRD,TEM,and SEM ***,NiSe_(2)@NGCF//Na_(3)V_(2)(PO_(4))_(3)full-cell also delivered an excellent reversible capacity of 378.7 mAh g^(−1)at 0.1 A g^(−1)after 50 cycles,demonstrating its potential for practical application in SIBs.

关键词： Sodium-ion batteries Anode materials Nickel selenide N-doped graphitic carbon fibers One-dimensional electrode

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Massively parallel direct writing of nanoapertures using multi-optical probes and super-resolution near-fields

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Microsystems & Nanoengineering 2022年第5期8卷 257-267页

作者： Changsu Park Soobin Hwang Donghyun kim nahyun Won Runjia Han Seonghyeon Jeon Wooyoung Shim Jiseok Lim Chulmin Joo Shinill Kang School of Mechanical Engineering Yonsei University50 Yonsei-roSeodaemun-guSeoul 03722Korea National Center for Optically-Assisted High Precision Mechanical Systems Yonsei UniversitySeoul 03722Korea Department of Materials Science and Engineering Yonsei University50 Yonsei-roSeodaemun-guSeoul 03722Korea School of Mechanical Engineering Yeungnam University280 Daehak-roGyeongsanGyungbuk 38541South Korea

Laser direct-writing enables micro and nanoscale patterning,and is thus widely used for cutting-edge research and industrial *** nanolithography methods,such as near-field,plasmonic,and scanning-probe lithography,are gaining increasing attention because they enable fabrication of high-resolution nanopatterns that are much smaller than the wavelength of ***,conventional methods are limited by low throughput and scalability,and tend to use electron beams or focused-ion beams to create *** this study,we developed a procedure for massively parallel direct writing of nanoapertures using a multi-optical probe system and superresolution near-fields.A glass micro-Fresnel zone plate array,which is an ultra-precision far-field optical system,was designed and fabricated as the multi-optical probe *** a chalcogenide phase-change material(PCM),multiple layers of Sb_(65)Se_(35) were used to generate the super-resolution near-field effect.A nanoaperture was fabricated through direct laser writing on a large-area(200×200mm^(2))multi-layered PCM.A photoresist nanopattern was fabricated on an 8-inch wafer via near-field nanolithography using the developed nanoaperture and an i-line commercial exposure *** other methods,this technique allows high-throughput large-area nanolithography and overcomes the gap-control issue between the probe array and the patterning surface.

关键词： lithography optical resolution

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