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Fast response CdS-CdSxTe(1-x)-CdTe core-shell nanobelt photodetector

Science Bulletin 2018年第17期63卷 1118-1124页

作者： Mingwei Tang Pengfei Xu Zhong Wen Xing Chen Chenlei Pang Xuechu Xu Chao Meng Xiaowei Liu He Tian nagarajan raghavan Qing Yang Sate Key Laboratory of Modern Optical Instrumentation College of Optical Science and Engineering Zhejiang University Hangzhou 310027 China The Fifth Research Institute of Ministry of Industry and Information Technology (MIIT) Cuangzhou 510610 China Center of Electron Microscopy. Zhejiang University Hangzhou 310027 China Engiaeering Product Development (EPD) Pillar Singapore University of Technology and Design Singapore 487372. Singapore Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 China

Quasi-one-dimensional semiconductor nanostructure-based photodetectors show high sensitivity but suffer from slow response speed due to surface reaction. Here, we report a fast-response CdS-CdSxTei-x-CdTe core-shell nanobelt photodetector with a rise time of 11 /.is, which is the fastest among CdS based photodetectors reported previously. The improved response speed is ascribed to the sup-pressed possibilities of surface reaction resulting from the core-shell structure and heterojunction among the CdS, CdSxTel-x and CdTe. The measured response spectrum of CdS-CdSxTe1-x-CdTe core-shell nano-belt photodetector covers a wide range from 355 to 785 nm. Moreover, high responsivity （1,520 A/W） and large 3 dB bandwidth （~22.9 kHz） are obtained along with the fast response, The high performance in responsivity, sensitivity, spectral response and photoresponse speed makes this device a promising candidate for practical application in optical sensing, communication and imaging.

关键词： CdS-CdSxTel-x-CdTe Core-shell Photodetector Fast response

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Dielectric Breakdown-Recovery in Logic and Resistive Switching in Memory-Bridging the Gap between the Two Phenomena

Dielectric Breakdown-Recovery in Logic and Resistive Switchi...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Kin Leong Pey nagarajan raghavan Xing Wu Wenhu Liu Michel Bosman Singapore University of Technology and Design(SUTD) Division of Microelectronics School of EEENanyang Technological University(NTU) A*STAR Institute of Materials Research and Engineering(IMRE) 3 Research Link

Dielectric breakdown is a well documented phenomenon studied for logic transistors using SiO2/SiON and HfO2 as the oxide material with thickness ranging from 1-5 nm. Recovery of dielectric breakdown has also been reported recently and its implications on the prolonged time dependent dielectric breakdown（TDDB）lifetime are very ***,in the non-volatile memory arena,orders of magnitude change in conductance of the oxide has been observed for different voltage levels, voltage polarities and current densities,which is commonly referred to as"resistive switching". Interestingly,although the gate stacks used for logic and memory applications are very similar in the materials used and dimensions as well,the mechanisms postulated to explain the breakdown-recovery mechanism in logic and switching mechanism in memory are very different. Often,the mechanism underlying switching tends to be very speculative without any convincing physical and electrical evidence that confirms the underlying kinetics of the reversible conductance state transition process. The issue stems from the fact that researchers in logic and memory operate in two distinct domains and seldom interact with each other and as a result,the link between the devices used for these two applications is not clearly recognized by most *** this study,we will bridge the gap between these two phenomena and take advantage of our understanding of dielectric breakdown and recovery to convincingly explain the fundamental physics governing the switching process.

关键词： Switches Logic gates Electrodes Dielectric breakdown Metals Market research

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