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Two-dimensional molecular crystalline semiconductors towards advanced organic optoelectronics

Nano Research 2022年第10期15卷 9554-9572页

作者： Xuemei Dong Heshan Zhang Yinxiang Li Bin Liu Keyuan Pan Yijie Nie Mengna Yu mustafa eginligil Juqing Liu Wei Huang Key Laboratory of Flexible Electronics(KLOFE)&Institute of Advanced Materials(IAM) Nanjing Tech University(Nanjing Tech)Nanjing 211816China Center for Molecular Systems and Organic Devices(CMSOD) State Key Laboratory of Organic Electronics and Information Displays&Institute of Advanced Materials(IAM)Nanjing University of Posts&TelecommunicationsNanjing 210023China Frontiers Science Center for Flexible Electronics Xi’an Institute of Flexible Electronics(IFE)and Xi’an Institute of Biomedical Materials&EngineeringNorthwestern Polytechnical UniversityXi’an 710072China

The compelling demand for higher performance and lower cost in the optoelectronics industry has driven the development of organic *** crystalline semiconductors(MCSs),especially two-dimensional MCSs(2D-MCSs),possess intrinsic ordered structure,quantum confinement effect,high mobility,unique optical and electrical properties,and more ecological and cheaper production,which make great promises in high-performance optoelectronic *** we provide a review of design principles and synthetic strategies for 2D-MCS materials,exploiting their potential as a revolution option in associated optoelectronic *** merits and limitations of each strategy are presented,and these molecular crystals are considered as a competitive choice for emerging semiconducting materials in information ***,the current challenges and future perspectives in this field are also elaborated.

关键词： two-dimensional molecular crystalline semiconductors(2D-MCSs) molecular design strategies preparation techniques photoelectronic applications

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Probing magnetic-proximity-effect enlarged valley splitting in monolayer WSe2 by photoluminescence

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Nano Research 2018年第12期11卷 6252-6259页

作者： Chenji Zou Chunxiao Cong Jingzhi Shang Chuan Zhao mustafa eginligil Lishu Wu Yu Chen Hongbo Zhang Shun Feng Jing Zhang Hao Zeng Wei Huang Ting Yu Address correspondence to Ting Yu yuting@ntu.edu.sg Chunxiao Cong cxcong@*** Hao Zeng haozeng@bufalo.edu Wei Huang lamwhuang( ***

Possessing a valley degree of freedom and potential in information processing by manipulating valley features (such as valley splitting), group-VI monolayer transition metal dichalcogenides have attracted enormous interest. This valley splitting can be measured based on the difference between the peak energies of σ+ and σ− polarized emissions for excitons or trions in direct band gap monolayer transition metal dichalcogenides under perpendicular magnetic fields. In this work, a well-prepared heterostructure is formed by transferring exfoliated WSe2 onto a EuS substrate. Circular-polarization-resolved photoluminescence spectroscopy, one of the most facile and intuitive methods, is used to probe the difference of the gap energy in two valleys under an applied out-of-plane external magnetic field. Our results indicate that valley splitting can be enhanced when using a EuS substrate, as compared to a SiO2/Si substrate. The enhanced valley splitting of the WSe2/EuS heterostructure can be understood as a result of an interfacial magnetic exchange field originating from the magnetic proximity effect. The value of this magnetic exchange field, based on our estimation, is approximately 9 T. Our findings will stimulate further studies on the magnetic exchange field at the interface of similar heterostructures.

关键词： valley splitting transition metal dichalcogenides magnetic proximity effect heterostructure magnetic exchange field

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Tunable excitonic emission of monolayer WS2 for the optical detection of DNA nucleobases

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Nano Research 2018年第3期11卷 1744-1754页

作者： Shun Feng Chunxiao Cong Namphung Peimyoo Yu Chen Jingzhi Shang Chenji Zou Bingchen Cao Lishu Wu Jing Zhang mustafa eginligil Xingzhi Wang Qihua Xiong Arundithi Ananthanarayanan Peng Chen Baile Zhang Ting Yu Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore 637371 Singapore School of Information Science and Technology Fudan University Shanghai 200433 China Key Laboratory of Flexible Uectronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University (NanjingTech) 30 South Puzhu Road Nanjing 211816 China Division of Bioengineering School of Chemical and Biomedical Engineering Nanyang Technological University Singapore 637457Singapore

Two-dimensional transition metal dichalcogenides （2D TMDs） possess a tunable excitonic light emission that is sensitive to external conditions such as electric field, strain, and chemical doping. In this work, we reveal the interactions between DNA nucleobases, i.e., adenine （A）, guanine （G）, cytosine （C）, and thymine （T） and monolayer WS2 by investigating the changes in the photoluminescence （PL） emissions of the monolayer WS2 after coating with nucleobase solutions. We found that adenine and guanine exert a clear effect on the PL profile of the monolayer WS2 and cause different PL evolution trends. In contrast, cytosine and thymine have little effect on the PL behavior. To obtain information on the interactions between the DNA bases and WS2, a series of measurements were conducted on adenine-coated WS2 monolayers, as a demonstration. The p-type doping of the WS2 monolayers on the introduction of adenine is clearly shown by both the evolution of the PL spectra and the electrical transport response. Our findings open the door for the development of label-free optical sensing approaches in which the detection signals arise from the tunable excitonic emission of the TMD itself rather than the fluorescence signals of label molecules. This dopant-selective optical response to the DNA nucleobases fills the gaps in previously reported optical biosensing methods and indicates a potential new strategy for DNA sequencing.

关键词： tungsten disulfide photoluminescence optical biosensing chemical doping

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